National Institute Of Materials Physics - Romania

We investigated the superconducting critical temperature, transport critical-current density and the thermo-power properties of Bi1.7Pb0.4Sr1.5Ca2.5Cu3.6Ox/(LiF)(y) samples. It was found that the midpoint critical temperature increases with increasing y, attaining approximate to 119.5 K for y = 0.15. The transition width shows a minimum and the critical temperature (zero electrical resistance) exhibits a maximum as a function of y. The observed behavior is correlated with the SEM analysis. Powder X-ray diffraction studies reveal that in our samples the amount of Bi2Sr2Ca2Cu3O10+delta high-temperature superconducting phase is maximal (70-78%) for y = 0.05-0.07.

Ce-doped BaTiO3 thin films prepared on silicon-platinium by r.f. sputtering has been investigated. BaTiO3 doped with 5.5 mol%CeO2 thin film was deposited at 550 degreesC substrate temperature in an Ar atmosfere. The crystal structure and shape were examined by X-ray diffraction and scanning electron microscopy with EDAX. Analysis by X-ray diffraction patterns show that the crystalline film with a cubic structure of BaTiO3, was obtained. The surface morphology (roughness, the grain size and the droplet size) of the thin film surface was examined by atomic force microscopy (AFM). The grain size is about 160 nm, the droplet size is about 0.675 mum and the roughness is 36.88 nm. EDAX analysis established a composition of the film to be identical with that of the target (BaTiO3 doped with 5.5 mol%CeO2). The broad peak in the capacitance versus temperature curve at the Curie point indicate that the r.f. sputtered Ce-doped BaTiO3 film is ferroelectric. The values of the capacitance of the thin film at 1 KHz were found to be 86 pF and the loss dielectric was tan delta = 0.0875. The film exibits a dielectric anomaly peak at 23 degreesC showing ferroelectric to paraelectric phase transition. (C) 2001 Kluwer Academic Publishers.

The concentration of primary radiation-induced defects has been previously estimated considering both the explicit mechanisms of the primary interaction between the incoming particle and the nuclei of the semiconductor lattice., and the recoil energy partition between ionisation and displacements, in the frame of the Lindhard theory. The primary displacement defects are vacancies and interstitials that are essentially unstable in silicon. They interact via migration, recombination, annihilation or produce other defects. In the present work, the time evolution of the concentration of defects induced by pions in medium and high resistivity silicon for detectors is modelled, after irradiation, In some approximations, the differential equations representing the time evolution processes could be decoupled. The theoretical equations so obtained are solved analytically in some particular cases. with one free parameter, for a wide range of particle fluences and/or for a wide energy range of incident particles, for different temperatures; the corresponding stationary solutions are also presented. (C) 2001 Elsevier Science B.V. All rights reserved.

We report on enhancements in the magnetization of two-dimensional electron systems in the quantum Hall regime. The observed discontinuities in the magnetization exceed the predictions for interacting electrons calculated in the Hartree-Fock approximation where only the exchange enhancement of the energy gaps is taken into account. We attribute the further enhancement to many-body correlation effects, i.e., filling factor dependent screening within the screened Hartree-Fock approximation. With this, the discontinuities in the magnetization no longer reflect the discontinuities of the chemical potential, but its behavior in the vicinity of integer filling factors.

An EPR study, of the paramagnetic centers formed by irradiation of polycrystalline K2Cr2O7 and BaCr2O7 was made, In the EPR spectra of the gamma irradiated powder samples, at room temperature, the presence of three types of paramagnetic centers iv as observed. According to their EPR parameters and thermal behaviour. these centers were attributed to the Cr(O)over dot(4)(3-), Cr-2(O)over dot(7)(3-) and Cr(O)over dot(3)(-) radicals respectively,. An adequate mechanism radiolysis has been established.

Trapping levels which govern the vertical transport in (nc-Si/CaF2)(n) multi-quantum wells were investigated using two different techniques: (a) the temperature dependence of the dark current and (b) the thermally stimulated depolarization current technique (TSDC). Measurements by the first technique showed that the conduction mechanism was thermally activated above 200 K with activation energies of 0.35-0.7 eV, These activation energies were found to increase with increasing electric field. TSDC measurements showed also the existence of at least one broad peak above 200 K with estimated activation energies in the range of 0.4-0.45 eV. Analysis of the peak by the fractional heating method showed a continuous distribution of defect states from 0.3 to 0.83 eV. (C) 2001 Elsevier Science B.V. All rights reserved.

Recent studies of mechanically alloyed Fe-Cu powder mixtures have suggested differences in the local magnetic environment of iron atoms. For a more accurate definition of this point, ball-milled Cu70Fe30 and Cu50Fe50 alloys were investigated by Mossbauer spectroscopy in the, temperature range 4.2-300 K. The low temperature Mossbauer spectra exhibit a broad magnetic pattern. typical of a defect structural configuration. The magnetic splitting strongly decreases with increasing temperature, especially in the case of Cu70Fe30 alloy. But even for this composition there is, at room temperature, an unresolved magnetic pattern. Applying a magnetic field of 3 T, parallel to gamma rays, at 4.2 K a rotation of all magnetic moments along the external field is observed. The samples behave as an alloy with continuously distributed local fields. (C) 2001 Elsevier Science BY. All rights reserved.

The high resolution spectroscopic and emission decay properties of Nd:YAG ceramics with up to 9 at.% Nd show that no major changes from the single crystals other than those induced by the increased Nd concentration occur and indicate that these materials can be used for construction of efficient and high power lasers. The laser emission of a 3.8 at.% Nd ceramic laser component under hot band resonant pump at 885 nm with a Ti:sapphire laser is demonstrated. (C) 2001 Elsevier Science B.V. All rights reserved.

The magnetic interactions between the nanograins in heterogeneous granular Cu-(SmCo5)-Fe ribbons were evaluated with a classical mean field model to obtain the exchange coupling as well as the magnetic moment per nanoparticle. The samples were subjected to various thermal treatments and a significant magnetoresistive effect was obtained when the optimal annealing conditions had been achieved. (C) 2001 Elsevier Science B.V. All rights reserved.

We consider semiconductor devices composed of a small quantum structure as the active device region and two classical environments constituting the source- and the drain contact. The contacts are taken as free electron gases with infinite conductivity defining the chemical potentials in the contacts. The transport through the quantum structure is described in the Landauer-Buttiker formalism using electronic scattering wave functions which determine the electron density in the quantum system. In our Hartree approximation these charges and the induced charges in the contacts are the sources of the self-consistent Coulomb field. As a particular quantum structure we study a GaAs heterostructure device consisting of a two-dimensional electron gas sandwiched between a gate contact and an AlGaAs blocking barrier [see V.T. Dolgopolov ct al., Phys. Low-Dim. Struct. 6 (1996) 1]. We demonstrate the quantitative agreement of our theory with the experimental results. (C) 2001 Elsevier Science B.V. All rights reserved.