National Institute Of Materials Physics - Romania

UV-nanoimprint lithography is currently seen like an alternative to the classical lithographic techniques (electron beam or optical lithography) for large scale patterning in industrial applications. The present study is oriented on the fabrication of silicon nano-cones (pyramids) by using the UV-nanoimprint technique with polymeric stamps and deep reactive ion etching using the UV-cured resist as etching mask at cryogenic temperatures. The results show that the resist can act successfully as etching mask for the cryogenic silicon etching process.

In this paper we present the results obtained by depositing the nanocomposite materials based on nano TiO2/TiO2:N, Ag, SiO2, single-walled carbon nanotube (SWCNTs), single-walled functionalized carboxylic acid, (SWCNT-COOH), poly(2,2' bithiophene) (PBTh) and poly(dipheylamine) (PDPA) by conventional and unconventional methods on the surface of sheepskin leathers. The nanocomposite materials were integrated in film forming polymers and were applied on sheepskin leather surfaces by spraying (conventional method) or by activating the surface with cold atmospheric plasma followed by electrospraying (unconventional methods). The leather surfaces were tested for antimicrobial properties against Grampositive and Gram-negative bacteria and fungi according to ISO 20743: 2007. The photocatalytic properties under visible light exposure were also tested using two organic stain models (methylene blue and orange II). The stain discoloring was evaluated by measuring the color differences between the blank and the samples with DATA Color Check Plus II portable device assisted by CIELab color management software. The evaluation of the physical-mechanical resistance and comfort properties for the sheepskin leathers was determined by measuring the water vapor permeability, rubbing tests and abrasion resistance. The results showed that the sheepskin leather surfaces treated with nanocomposite materials have improved antibacterial, self-cleaning, physical-mechanical and comfort properties as compared to untreated samples, with potential applications for added value multifunctional products. (c) 2021 Elsevier Ltd. All rights reserved. Selection and peer-review under responsibility of the scientific committee of the International Conferences & Exhibition on Nanotechnologies, Organic Electronics & Nanomedicine - NANOTEXNOLOGY 2020. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/

Herein we show the terahertz (THz) time-domain ellipsometry investigation of the InSb semiconductor. At room temperature, the carriers of InSb are thermally excited to the conduction band due to its narrow bandgap. We, nevertheless, show that THz ellipsometry can detect subtle differences between carrier densities of undoped and lightly doped InSb bulk semiconductors. The advantage of THz ellipsometry over other THz time-domain spectroscopy techniques is that it does not require reference measurements through an aperture or standard mirrors.

In this paper we introduce a model of cooperation between High School-University-Industry sustained by activities and results obtained in "Cypress - National Instruments Club" started at "Transilvania" University of Brasov - Romania. This strategic collaboration between High School-University-Industry was become necessary because technology is evolving at a rate that is quickly outpacing traditional engineering teaching methods. New methods such as hands-on learning labs, industry-centric curriculum, permanent updating of facilities, and using new adaptive learning software are being adopted. "Transilvania" University is targeting education at the industries of the future rather than industries of the past and for this reason we must apply the same strategies inside the high school in order to well prepare the children's, future students and the new engineers.

We investigate the photoluminescence properties of structures comprising of Si1-xGex nanoparticles (NPs) within SiO2, GeO2, TiO2 and Ta2O5 oxide matrices. Of the investigated structures, it was observed that the structures with GeO2 and TiO2 matrices provide increased spectral response (at similar to 907 and 844 nm respectively) and increased PL intensity. The improved PL characteristic have been attributed to increased diffusion barrier against oxygen which otherwise would result in formation of unwanted oxide at the film-oxide interface, thereby deteriorating the optical properties.

Composites of BaTiO3 (BT) and doped-PZT (d-PZT) micro-particles randomly dispersed in a PDMS matrix were prepared by a molding process. The morpho-structural characterization, performed by SEM and XRD, showed ceramic micro-grains of cubic BT and orthorhombic d-PZT, randomly dispersed in the PDMS matrix. Polarization (P) as a function of the applied field (E) was measured for composite samples, as well as for polymer samples. Hysteresis loops typical for a dielectric material were obtained, but also atypical ones, especially for higher fraction of polymer in composite, lower fields and shorter measuring periods, as a result of the dielectric relaxation in polymer and the presence of interfacial polarization charges at the contact between polymer and ferroelectric. All these composites show very low polarizations (less than 0.2 mu C/cm(2) and 0.05 mu C/cm(2) the maximum and remnant polarization, respectively), caused by the very low dielectric constant of the polymer (less than 10), which drastically reduces, up to 100 times, the electric field effectively applied to the ferroelectric. Weak pyroelectric response was recorded on BT/PDMS, but a typical behavior of a pyroelectric detector was observed. A figure of merit of the material which exceeds 10(-4) m(2) /C was estimated.

In this study, polystyrene composites (PS-GO(f)) with variable concentration (0.5; 1; 2; 3; 4; and 5 wt%) of GO(f) were obtained through the in-situ polymerisation of the styrene in the presence of benzoyl peroxide and graphene oxide(GO) functionalized with 3-(methacryloyloxy)-propyltrimethoxysilane(gamma-MPTS). For determining the morphological and structural particularities of polymeric composites transmission electron microscopy (TEM) measurements were performed. The influence of functionalized GO on thermal and combustion properties of polystyrene (PS)-based composite materials was determined through several methods: Thermogravimetry (TGA); derived thermogravimetry (DTG); microscale combustion calorimetry analysis (MCC); and chemical kinetic studies through TGA and MCC determinations at similar heating rates.

Deposition of Ge nanoparticles in Si3N4 films by heating Si and quartz substrates at 500 degrees C were obtained using co-sputtering Ge, and Si3N4. Their structure and photo-electrical behaviour were investigated by transmission electron microscopy, current - voltage and spectral photo-current investigations, respectively. The spectral photoresponse were correlated with microscopy results. Depending on the measuring temperature, the current under illumination increases with about five orders of magnitude compared with the dark one. The photo-current spectra measured in photovoltaic regime and at -1 V show a single cut-off wavelength in near infrared domain at about 1362 nm.

The memory properties of a trilayer structure of ZrO2/Ge-ZrO2/ZrO2/Si-p were investigated. The trilayer was prepared by magnetron sputtering deposition followed by a rapid thermal annealing process for obtaining Ge nanocrystals embedded in ZrO2 matrix. The X-ray diffraction patterns obtained on annealed structures show that both trilayer structures are cristallized, with narrow diffraction peaks. Ge as a separated phase is not evidenced in the diffractograms, instead is possible that Ge atoms enters in ZrO2 lattice structure and form a compound of ZrO3GeO8 crystallized in the tetragonal phase. In the case of ZrO2 control structure, the diffractograms show that the ZrO2 layer is crystallized in tetragonal phase. The memory properties are evidenced by C-V characteristics with counterclockwise hysteresis loop and a memory window of Delta V=1.1V for the structure annealed at 570 degrees C and Delta V=0.8 V for the structure annealed at 650 degrees C. The influence of the interface SiO2 layer on the frequency dependence of capacitance was evidenced by C-f characteristics.