National Institute Of Materials Physics - Romania

Abstract: The influence of temperature factor to crystal structure as well as magnetic and electric properties of strontium hexaferrite partially substituted with diamagnetic indium ions has been investigated. Ferroelectric properties have been found out in SrFe11.9In0.1O19 compound that contradicts to conventional opinion, which describe its crystal structure within the framework of centrosymmetric space group P6(3)/mmc (No. 194). For determination features of the crystal structure, which are responsible for ferroelectric properties of strontium hexaferrite, have been carried out neutron diffraction measurements with high resolution in temperature range from 1.5 to 740 K. The analysis of hexaferrite structure has been executed within the framework both centrosymmetric and non-centrosymmetric space group. Values of coefficients of magneto crystalline anisotropy at 5 and 300 K and influence of ambient temperature to linear size of magnetic regions have been determined from magnetic measurements. (C) 2019 Elsevier B.V. All rights reserved.

Abstract: In view of the HL-LHC upgrade, radiation-tolerant silicon sensors containing low-resistivity p-type implants or substrates, like LGAD or HV-CMOS devices, are being developed in the framework of ATLAS, CMS, RD50 and other sensor R&D projects. These devices are facing a particular problem - the apparent deactivation of the doping due to the irradiation, the so-called acceptor removal effect. In the present work proton and neutron fluence-dependent radiation damage effects, including the change in leakage current and effective doping concentration, space charge sign-inversion, but also introduction and annealing of point- and cluster-like defects have been studied in Si pad diodes fabricated from p-type EPI material of different resistivity (10-1000 Omega cm). Standard electrical characterisations (IV, CV), TCT (Transient Current Technique) and TSC (Thermally Stimulated Current) techniques were applied. A correlation between effective doping concentration obtained from CV measurements and defect concentration N-t extracted from TSC measurements for both - neutron and proton - irradiations was observed pointing towards the microscopic origin of the acceptor removal. A detailed analysis of the dominant TSC peaks - E(30), BiOi and three main deep acceptor levels H(116), H(140) and H(152) - responsible for the changes in the effective space charge is performed. The origin and annealing behaviour of E(30) and H(40) and other cluster-related defects are discussed as well.

Abstract: Ba0.6Sr0.4TiO3 (BST) ferroelectric thick films were grown on MgO(001) and Al2O3 (0 0 0 1) single-crystal substrates by using a pulsed laser deposition method. Structural, morphological, optical, and terahertz characterization of the BST films were performed by X-ray Diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry (SE), and Terahertz Time-Domain Spectroscopy (THz-TDS). Single-phase samples with strong preferred (1 1 1) orientation and surface roughness lower than 1.5% of their thicknesses have been obtained for both types of substrates. SE was employed to extract the thickness and optical properties by using a 3-layer optical model (substrate/thin film/roughness). The inferred refractive index @630 nm is around 2.05, while the optical interference is visible until 3.3 eV. The THz-TDS measurements in transmission set-up were carried out one after the other on substrates before and after the BST film deposition. The standard THz-TDS analysis of double-layer samples proved difficult to complete in the cases in which a thin or thick film is deposited on a much thicker substrate of known dielectric properties. However, we have been able to extract the complex dielectric permittivity in the THz domain for BST samples with thicknesses of few microns, by developing a specific procedure of data analysis.

Abstract: A complex investigation of the morpho-structural, magnetic, magneto-optical and magneto-transport properties of amorphous Fe-Gd thin films crossing the magnetization compensation point is reported and the unexpected observed magneto-functionalities are discussed. A tendency of magnetic domain formation with increasing the Fe content over the compensation concentration is observed. The switch from a reversed Magneto-optical Kerr Effect loop to a direct loop when increasing the Fe content over the compensation point is explained via the specific contribution to the rotation of the polarization vector from each magnetic sublattice, belonging to Fe and Gd, respectively. Local atomic configurations and magnetic interactions ascertained the amorphous character and revealed an out-ofplane orientation of the magnetic moment of Fe above the compensation point. The thermomagnetic curves prove a concentration dependent behavior, explained by weakly coupled magnetization relaxation processes of the two magnetic sub-lattices. On the other hand, the magnetic hysteresis loops gave evidence of two exchange coupled magnetic phases with different coercive fields. According to structural and Fe-57 Mossbauer Spectroscopy results, the two phases correspond to definite nanosized volumes of two different average concentrations (one of them closer to the compensation point) which are randomly distributed in the film. The unexpected single step-like behavior of the magneto-resistivity curves was explained by dissimilar switching of the spins in these two magnetic phases distributed in nano-sized volumes.

Abstract: Single-phase Ba1-xSrxTiO3 (BST) perovskite ceramics with 0.3 <= x <= 0.4 were prepared from powders synthesized via sol-gel route. The compositions have the ferroelectric-paraelectric phase transition close to room temperature. At 20 degrees C the BST ceramics are ferroelectric for 0.3 <= x <= 0.35 and paraelectric for x = 0.375 and x = 0.40. The study follows the relation between the structural changes produced when increasing the Sr content and the dielectric properties at low intensity electric fields. It is found that the grain size and tetragonality decreases as the Sr content increases. Analyses of complex permittivity and impedance spectroscopy reveal the temperature and frequency dependencies of the dielectric properties. The phase transitions seem to be of first order for all compositions, with a thermal hysteresis that decreases with increasing the Sr content, fact attributed to the corresponding increase of the grain boundaries weight allowing a more efficient stress relaxation in the structure during the change of the symmetry from cubic to tetragonal. The diffusiveness degree during the phase transition is increasing with Sr content, suggesting some relaxor-type contribution attributed to smaller grain size. The ac conductivity follows the universal Jonscher law, with an ac component having the power parameter s independent of Sr content, and a dc component that it is thermally activated with an activation energy of about 0.7-0.77 eV attributed to oxygen vacancies acting as donor-like defects. The fit of impedance spectra at different temperatures and frequencies is obtained by using an equivalent circuit accounting the grains, grain boundaries, electrode interfaces and the local contributions produced by reorientation of defect dipoles or defect clusters. All the component circuits have significant variations around phase transitions. These are discussed in relation to structural changes occurring during transition and considering the changes in the distribution of various charges when polarization vanishes.

Abstract: Hybrid organic-inorganic thin films based on zinc phthalocyanine (ZnPc) and ZnO nanoparticles were deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE). Synthesized by a simple wet chemical precipitation method, the ZnO nanoparticles were featured by a hexagonal wurtzite structure, a band-gap value of similar to 3.3 eV and emission bands typical for this semiconductor. The hybrid films containing ZnPc and various amounts of ZnO nanoparticles were evaluated from morphological, compositional, structural, optical and electrical point of view. No chemical decomposition of the organic compound was observed in the FTIR spectra of the deposited layers. The transmittance and photoluminescence spectra recorded on hybrid films disclose the optical signature of both organic (ZnPc) and inorganic (ZnO) components. The electrical measurements carried out under illumination emphasized the importance of the quantity of the inorganic component on the performance parameters of the structures prepared with the hybrid films. Our study provides new insight in the MAPLE deposition of the organic-inorganic hybrid films with potential applications in the photovoltaic cells area.

Abstract: This work reports the use of electrospun conductive gold covered polycaprolactone fibers for the quantification of dissolved O-2. The morphologies of the electrospun fibers obtained at a static and a dynamic drum collector were investigated by scanning electron microscopy. The reduction process of O-2 at negative potentials is analyzed by cyclic voltammetry and electrochemical impedance spectroscopy (EIS) in sodium phosphate buffer (NaPB) pH 7.0 and in cellular media pH 7.4. The electrochemical sensing performance of Au/PCL towards O-2 quantification in NaPB and cellular media is compared by using three electrochemical techniques: cyclic and linear sweep voltammetry and EIS. Measurements are done in a two electrode configuration, using a silver wire as reference, to show the applicability of the method for O-2 quantification in cellular culture media.

Abstract: Graphene oxide has been synthesized, additionally derivatized with chloroacetic acid for increase the number of available carboxylic groups and further functionalized with crown-ether moieties. The thus obtained material was characterized by IR, thermal analysis, SEM, Raman, and XPS. Tests on adsorption of several metal cations showed that cooper and iron are more retained than potassium.

Abstract: Iridium thin films are grown by direct-current plasma magnetron sputtering, on MgO single-crystal substrates with various surface orientations, i.e. (100), (111), and (110). The surface morphology, the crystalline properties of the films, and the substrate-thin-film interface are investigated by atomic force microscopy, X-ray diffraction (XRD), focused ion beam scanning electron microscopy, and high-resolution transmission electron microscopy, respectively. The results reveal that hetero-epitaxial thin films with different crystallographic orientation and notable atomic scale smooth surface are obtained. From the XRD analysis, the following epitaxial relations are obtained: (1) (100)(Ir)||(100)(MgO) out-of-plane and [001](Ir)||[001](MgO) in-plane for Ir grown on MgO(100), (2) (110)(Ir)||(110)(MgO) out-of-plane and [1-10](Ir)||[1-10](MgO) in-plane for Ir grown on MgO(110), and (3) (111)(Ir)||(111)(MgO) out-of-plane and two variants for in-plane orientation [1-10](Ir)||[1-10](MgO) and [1-10](Ir)||[10-1](MgO), respectively, for Ir grown on MgO(111). Because of the large misfit strain (9.7%), the thin films are found to grow in a strain-relaxed state with the formation of geometrical misfit dislocations with a similar to 2.8-nm spacing, whereas thermal strain is stored upon cooling down from the growth temperature (600 degrees C). The best structural characteristics are obtained for the (111)-oriented films with a mosaicity of 0.3 degrees and vanishingly small lattice distortions. The (100)- and (110)-oriented films exhibit mosaicities of similar to 1.2 degrees and lattice distortions of similar to 1% which can be explained by the larger surface energy of these planes as compared to (111).

Abstract: The emerging field of electronics based on ferro-functional materials relies on driving effectively and predictably a ferroelectric system between different polarization states through bias applied to metallic contacts. This requires detailed understanding of the growth mechanisms and electronic properties of the interface, including ferroelectric and material - dependent band alignment and Schottky barrier heights. Whether the major contribution at the interface band alignment comes from the work function difference or from the ferroelectric state is still under debate. Here, using X-ray photoemsion and ab-initio calculations, we derive the complex microscopic picture of metal/ferroelectric interface formation, including growth mechanism, valence alteration, ferroelectric-dependent electrostatic potential and thickness - dependent compensation mechanisms of ferroelectricity, starting from the ultrathin growth of Cu up to 100 angstrom on BaTiO3. One establishes the evolution of the band bending and of the build-in potential from the initial probed thickness of the ferroelectric in the range of 3 lambda (lambda - the inelastic mean free path) while gradually approaching the contact region with the metal at higher thickness of the top layer. We find that the well-defined orientation of the ferroelectric polarization lead to a band bending at the interface, which add at the bending expected from the work function difference of the two joining materials.