Image

Dr. Adrian Slav

Scientific Researcher Rank 3

Laboratory of Atomic Structures and Defects in Advanced Materials

slav[AT]infim[DOT]ro
Keywords:  material science, nanomaterials

Education

2013 - PhD in Solid State Physics, University of Bucharest, Faculty of Physics, Univ. of Bucharest

2004 - Master of Physics: Polymer and Materials Physics

2002 - License in Engineering Physics, University of Bucharest, Faculty of Physics

Positions

2016-prezent:  Research Scientist 3rd degree, National Institute of Materials Physics, Romania, Si-and Ge Based Nanomaterials and Nanostructures Group;

2012-2016: Research Scientist, National Institute of Materials Physics, Romania,  Si-and Ge Based Nanomaterials and Nanostructures Group;

2002-2012: Assistant Researcher, National Institute of Materials Physics, Romania, Si Based Micro- and Nanosystems Group;

Research interests

  • nanostructured materials based on Ge, Si and GeSi e.g. GeSi QDs/NCs/NPs embedded in oxide matrix (TiO2 and HfO2), GeSi NCs films: preparation, experiment and modeling of electrical transport and phototransport in corelation with structure and morphology;
  • trapping processes in monocrystals and multilayered nanostructures based on Si;
  • film nanostructuring by rapid thermal annealing in controlled conditions.

Expertize

  • deposition of thin films and multilayers based on Ge and GeSi, TiO2, SiO2, HfO2 by magnetron sputtering (MS) for optical sensors and nonvolatile memory applications;
  • cleanroom processing and metal deposition;
  • electrical and photoelectrical characterization of nanostructured materials 
  • experimental data processing and modelling of the obtained experimental results;
  • characterization of defects induced by heavy ions in Si;
  • memory properties of MOS-like capacitors containing Ge NCs embedded in HfO2;
  • thin film characterization by XRD, UV-VIS, AFM and FTIR measurements;
  • diamond like carbon material deposition by MS for biomedical applications;
  • depositions of biocompatible materials (e.g. hydroxyapatite, bioglass) by MS and sol-gel;
  • vacuum techniques and vacuum machines;
  • programming in Fortran, Dephi, C++, Pyton;
  • set-up programming using LabView development software.  

Patents

  • OSIM patent application no A/00193 (Publ. date 04-22-2021), "Film de GeSi-HfO2 nanostructurat fotosensibil in domeniul fereastra de lungimi de unda 1200...1600 nm" / "Photosensitive nanostructured GeSi-HfO2 film in 1200...1600 nm wavelength range", C. Palade, I. Stavarache, A. Slav, A.-M. Lepadatu, I. Dascalescu, T. Stoica, M.-L. Ciurea;
  • OSIM patent no RO133299-A0 (Publ. date 04-30-2019, "Structura pe baza de nanocristale de GeSi in TiO2 pentru fotodetectori in VIS-NIR si procedeu de realizare a acesteia" /  "Structure based on GeSi nanocrystals (NCs) in TiO2 for VIS-NIR photodetectors and its production process", M.-L. Ciurea, A. Slav, C. Palade, S. Lazanu, A.-M. Lepadatu;
  • OSIM patent no RO133300-A0 (Publ. date 04-30-2019), "Structura fotosensibila in domeniul SWIR, pe baza de nanocristale de Germaniu aliat cu Staniu si procedeu de realizare a acesteia", / "Photosensitive GeSn alloy NCs based structure in SWIR range and its production process", T. Stoica, M. Braic, A. Slav, A. E. Kiss, C. Palade, S. Lazanu, A.-M. Lepadatu, M.-L. Ciurea;
  • OSIM patent no RO131968-B1 (Publ. date 05-30-2018), "Matrice capacitiva pentru memorie nevolatila si procedeu de realizare a acestuia" / "Capacitive matrix for non-volatile memory, based on Ge NCs embedded in HfO2 and its production process", A. Slav, C. Palalade, A.-M. Lepadatu, S. Lazanu, M.-L. Ciurea, D. Vasilache, M. Dragoman;

Projects

1. Broadband photodetector based on hydrogenated GeSn layers
Project Type: PED, Start Date: 2020-10-23 End Date: 2022-10-23
2. GeSn layers with enhanced photosensitivity by field effect
Project Type: PD, Start Date: 2018-05-02 End Date: 2020-10-30

Publications

1. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Stoica, T; Ciurea, ML; Lepadatu, AM

Published: MAR 2022, COATINGS, 12, 348, DOI: 10.3390/coatings12030348

2. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, 12366, DOI: 10.1039/d1tc02921e

3. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared
Authors: Palade, C; Lepadatu, AM; Slav, A; Teodorescu, VS; Stoica, T; Ciurea, ML; Ursutiu, D; Samoila, C

Published: NOV 2021, MATERIALS, 14, DOI: 10.3390/ma14227040

4. GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
Authors: Slav, A; Dascalescu, I; Lepadatu, AM; Palade, C; Zoita, NC; Stroescu, H; Iftimie, S; Lazanu, S; Gartner, M; Buca, D; Teodorescu, VS; Ciurea, ML; Braic, M; Stoica, T

Published: DEC 16 2020, ACS APPLIED MATERIALS & INTERFACES, 12, 56171, DOI: 10.1021/acsami.0c15887

5. Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
Authors: Dascalescu, I; Zoita, NC; Slav, A; Matei, E; Iftimie, S; Comanescu, F; Lepadatu, AM; Palade, C; Lazanu, S; Buca, D; Teodorescu, VS; Ciurea, ML; Braic, M; Stoica, T

Published: JUL 29 2020, ACS APPLIED MATERIALS & INTERFACES, 12, 33886, DOI: 10.1021/acsami.0c06212

6. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Authors: Lepadatu, AM; Palade, C; Slav, A; Cojocaru, O; Maraloiu, VA; Iftimie, S; Comanescu, F; Dinescu, A; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, 25053, DOI: 10.1021/acs.jpcc.0c06290

7. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
Authors: Lepadatu, AM; Palade, C; Slav, A; Dascalescu, I; Cojocaru, O; Iftimie, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: 2020, CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 238, DOI:

8. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
Authors: Slav, A; Palade, C; Logofatu, C; Dascalescu, I; Lepadatu, AM; Stavarache, I; Comanescu, F; Iftimie, S; Antohe, S; Lazanu, S; Teodorescu, VS; Buca, D; Ciurea, ML; Braic, M; Stoica, T

Published: JUN 2019, ACS APPLIED NANO MATERIALS, 2, +, DOI: 10.1021/acsanm.9b00571

9. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Authors: Dascalescu, I; Cojocaru, O; Lalau, I; Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 40, DOI:

10. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Maraloiu, AV; Negrila, C; Logofatu, C; Stoica, T; Teodorescu, VS; Ciurea, ML; Lazanu, S

Published: NOV 1 2019, NANOTECHNOLOGY, 30, DOI: 10.1088/1361-6528/ab352b

11. Enhanced photocurrent in GeSi NCs/TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 76, DOI:

12. Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Authors: Lepadatu, AM; Slav, A; Palade, C; Dascalescu, I; Enculescu, M; Iftimie, S; Lazanu, S; Teodorescul, VS; Ciurea, ML; Stoica, T

Published: MAR 20 2018, SCIENTIFIC REPORTS, 8, DOI: 10.1038/s41598-018-23316-3

13. Enhanced photocurrent in GeSi NCs / TiO2 multilayers
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Lazanu, S; Stoica, T; Sultan, MT; Svavarsson, HG; Ciurea, ML

Published: 2018, , DOI:

14. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Authors: Palade, C; Lepadatu, AM; Slav, A; Lazanu, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: JAN 15 2018, APPLIED SURFACE SCIENCE, 428, 702, DOI: 10.1016/j.apsusc.2017.09.038

15. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Dascalescu, I; Iftimie, S; Lazanu, S; Ciurea, ML; Stoica, T

Published: NOV 19 2018, APPLIED PHYSICS LETTERS, 113, DOI: 10.1063/1.5039554

16. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Cojocaru, O; Stoica, T; Ciurea, ML; Lazanu, S

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:

17. Influence of preparation conditions on structure and photosensing properties of GeSi/TiO2 multilayers
Authors: Slav, A; Palade, C; Stavarache, I; Teodorescu, VS; Ciurea, ML; Muller, R; Dinescu, A; Sultan, MT; Manolescu, A; Gudmundsson, JT; Svavarsson, HG

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 66, DOI:

18. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
Authors: Lepadatu, AM; Palade, C; Slav, A; Maraloiu, AV; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, VS; Ciurea, ML

Published: APR 28 2017, NANOTECHNOLOGY, 28, DOI: 10.1088/1361-6528/aa66b7

19. Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Ciurea, ML; Stoica, T

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 90, DOI:

20. Photosensitive GeSi/TiO2 multilayers in VIS-NIR
Authors: Palade, C; Dascalescu, I; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Teodorescu, VS; Ciurea, ML; Comanescu, F; Muller, R; Dinescu, A; Enuica, A

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 70, DOI:

21. Correlation between strain and defects in Bi implanted Si
Authors: Palade, C; Lepadatu, AM; Slav, A; Ciurea, ML; Lazanu, S

Published: JUN 2016, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 93, 32, DOI: 10.1016/j.jpcs.2016.02.005

22. How morphology determines the charge storage properties of Ge nanocrystals in HfO2
Authors: Slav, A; Palade, C; Lepadatu, AM; Ciurea, ML; Teodorescu, VS; Lazanu, S; Maraloiu, AV; Logofatu, C; Braic, M; Kiss, A

Published: MAR 1 2016, SCRIPTA MATERIALIA, 113, 138, DOI: 10.1016/j.scriptamat.2015.10.028

23. Non-volatile memory structures with Ge NCs-HfO2 intermediate layer
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Lazanu, S; Logofatu, C; Teodorescu, VS; Ciurea, ML

Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 166, DOI:

24. HfO2 with embedded Ge nanocrystals with memory effects
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 48, DOI:

25. Encapsulation of iron atoms between framgments of graphene planes
Authors: Siklitskaya, AV; Ivanov-Omskii, VI; Chekulaev, MS; Yastrebov, SG; Smith, R; Slav, A; Morosanu, C; Kozyrev, SV

Published: OCT 2015, NANOSYSTEMS-PHYSICS CHEMISTRY MATHEMATICS, 6, DOI: 10.17586/2220-8054-2015-6-5-680-688

26. STRAIN DRIVEN CHANGES OF DEFECT PARAMETERS IN HEAVY ION IMPLANTED Si
Authors: Palade, C; Lepadatu, AM; Slav, A; Ciurea, ML; Lazanu, S

Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 1381, DOI:

27. Influence of strain field on nanoscale electronic processes in silicon-based semiconductors
Authors: Lepadatu, AM; Palade, C; Slav, A; Lazanu, S

Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 44, DOI:

28. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures
Authors: Palade, C; Slav, A; Lepadatu, AM; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 62, DOI:

29. Strain-induced modification of trap parameters due to the stopped ions in Bi-irradiated Si
Authors: Ciurea, ML; Lazanu, S; Slav, A; Palade, C

Published: NOV 2014, EPL, 108, DOI: 10.1209/0295-5075/108/36004

30. Effect of Bismuth Irradiation on Crystalline Silicon
Authors: Palade, C; Slav, A; Ciurea, ML; Lazanu, S

Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 76, DOI:

31. IODINE IRRADIATION INDUCED DEFECTS IN CRYSTALLINE SILICON
Authors: Slav, A; Lepadatu, AM; Palade, C; Stavarache, I; Iordache, G; Ciurea, ML; Lazanu, S; Mitroi, MR

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 276, DOI:

32. Effects produced by iodine irradiation on high resistivity silicon
Authors: Lazanu, S; Slav, A; Lepadatu, AM; Stavarache, I; Palade, C; Iordache, G; Ciurea, ML

Published: DEC 10 2012, APPLIED PHYSICS LETTERS, 101, DOI: 10.1063/1.4772015

33. Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
Authors: Stavarache, I; Lepadatu, AM; Gheorghe, NG; Costescu, RM; Stan, GE; Marcov, D; Slav, A; Iordache, G; Stoica, TF; Iancu, V; Teodorescu, VS; Teodorescu, CM; Ciurea, ML

Published: JAN 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 232, DOI: 10.1007/s11051-010-0021-4

34. OPTICAL CHARACTERIZATION OF TiO2-Ge NANOCOMPOSITE FILMS OBTAINED BY REACTIVE MAGNETRON SPUTTERING
Authors: Slav, A

Published: JUL-SEP 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 920, DOI:

35. STUDIES OF LONG TIME AND TRANSIENT EFFECTS INDUCED BY RADIATION IN CRYSTALLINE MATERIALS
Authors: Lazanu, S; Lazanu, I; Iordache, G; Stavarache, I; Lepadatu, A; Slav, A

Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 264, DOI:

36. STUDY OF THE INTERACTIONS OF IONS IN SILICON: TRANSIENT PROCESSES AND DEFECT PRODUCTION
Authors: Lazanu, S; Lazanu, I; Iordache, G; Stavarache, I; Lepadatu, A; Slav, A

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 332, DOI:

37. INFLUENCE OF THE DEPOSITION CONDITIONS ON THE PROPERTIES OF TiO2-Ge NANOCOMPOSITE FILMS SYNTHESIZED BY MAGNETRON CO-SPUTTERING
Authors: Slav, A; Stan, GE; Galca, AC

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 340, DOI:

38. STRUCTURAL AND OPTICAL PROPERTIES OF SOL-GEL DERIVED HYDROXYAPATITE FILMS IN DIFFERENT STAGES OF CRYSTALLIZATION AND DENSIFICATION PROCESSES
Authors: Tionica, S; Gartner, M; Ianculescu, A; Anastasescu, M; Slav, A; Pasuk, I; Stoica, T; Zaharescu, M

Published: 2009, NANOSTRUCTURED MATERIALS AND NANOTECHNOLOGY II, 29, +, DOI:

39. Rough Bioglass films prepared by magnetron sputtering
Authors: Slav, A; Ianculescu, A; Morosanu, C; Saranti, A; Koutselas, I; Agathopoulos, S; Karakassides, MA

Published: 2008, BIOCERAMICS, VOL 20, PTS 1 AND 2, 361-363, +, DOI: 10.4028/www.scientific.net/KEM.361-363.245

40. Hydroxyapatite films obtained by sol-gel and sputtering
Authors: Stoica, TF; Morosanu, C; Slav, A; Stoica, T; Osiceanu, P; Anastasescu, C; Gartner, M; Zaharescu, A

Published: SEP 30 2008, THIN SOLID FILMS, 516, 8116, DOI: 10.1016/j.tsf.2008.04.071

41. Thickness dependence of crystallization process for hydroxyapatite thin films
Authors: Mercioniu, I; Ciuca, S; Pasuk, I; Slav, A; Morosanu, C; Bercu, M

Published: AUG 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 2538, DOI:

42. Magnetic properties of iron-modified amorphous carbon
Authors: Yastrebov, SG; Ivanov-Omskii, VI; Pop, V; Morosanu, C; Slav, A; Voiron, J

Published: 2005, SEMICONDUCTORS, 39, 844, DOI: 10.1134/1.1992645

43. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e

Load More

Back to top

Copyright © 2022 National Institute of Materials Physics. All Rights Reserved