NIMP| Nedelcu Liviu, Author at NIMP

Education

Faculty of Physics, University of Bucharest

Positions

Senior researcher II

Research interests

Development of dielectric materials for microwave, millimeter wave, and terahertz applications.

Expertize

Dielectric polarization

Ferroelectric phase transitions

Solid-state reaction

Electroceramics

Microwave dielectrics

Thin films X-ray diffraction

Broadband Dielectric Spectroscopy

Dielectric resonators

Dielectric resonator antennas

Tunable capacitors

Patents

Process for obtaining of Mg₄Nb₂O₉ ceramics with low absorption in terahertz domain – RO 131868 B1

Projects

1. Multifunctional dielectric materials produced by spark plasma sintering for passive microwave devices

Project Type: PED, Start Date: 2020-10-23 End Date: 2022-10-21

2. Intrinsic properties in microwave dielectric materials investigated by terahertz time-domain spectroscopy

Project Type: TE, Start Date: 2018-10-10 End Date: 2020-10-09

3. Compact and integrated agile antennas based on tunable ferroelectric materials

Project Type: ANR-ANCS, Start Date: 2014-02-01 End Date: 2016-12-31

4. Advanced dielectric materials for therahertz space applications and technology

Project Type: STAR ROSA, Start Date: 2013-11-01 End Date: 2015-11-01

5. Terahertz spectroscopy low loss microwave dielectrics

Project Type: PD, Start Date: 2011-10-01 End Date: 2013-09-01

Publications

1. Intrinsic Dielectric Loss in Zr0.8Sn0.2TiO4 Ceramics Investigated by Terahertz Time Domain Spectroscopy

Authors: Nedelcu, L; Geambasu, CD; Enculescu, M; Banciu, MG

Published: JAN 2021, MATERIALS, 14, 216, DOI: 10.3390/ma14010216

Terahertz time-domain spectroscopy (THz-TDS) was employed for estimation of intrinsic dielectric loss of Zr0.8Sn0.2TiO4 (ZST) ceramics. Single-phase ZST dielectric resonators (DRs) with various synthesis parameters and, consequently, different extrinsic losses, were prepared by conventional ceramic technology. Even though the DRs exhibit a similar microstructure, their quality factor (Q is the inverse of dielectric loss tangent) measured in microwave (MW) domain at 6 GHz varies between 2500 and 8400. On the other hand, it was found that the THz dielectric loss is less sensitive to the sample preparation. The intrinsic losses (Q x f similar to 60 THz) of the ZST ceramics have been derived from THz data.

2. Investigation of Ba0.6Sr0.4TiO3 thick films by means of a novel THz-TDS approach

Authors: Nedelcu, L; Annino, G; Chirila, C; Trupina, L; Galca, AC; Banciu, MG

Published: MAR 15 2020, APPLIED SURFACE SCIENCE, 506, 144807, DOI: 10.1016/j.apsusc.2019.144807

Ba0.6Sr0.4TiO3 (BST) ferroelectric thick films were grown on MgO(001) and Al2O3 (0 0 0 1) single-crystal substrates by using a pulsed laser deposition method. Structural, morphological, optical, and terahertz characterization of the BST films were performed by X-ray Diffraction, Atomic Force Microscopy, Spectroscopic Ellipsometry (SE), and Terahertz Time-Domain Spectroscopy (THz-TDS). Single-phase samples with strong preferred (1 1 1) orientation and surface roughness lower than 1.5% of their thicknesses have been obtained for both types of substrates. SE was employed to extract the thickness and optical properties by using a 3-layer optical model (substrate/thin film/roughness). The inferred refractive index @630 nm is around 2.05, while the optical interference is visible until 3.3 eV. The THz-TDS measurements in transmission set-up were carried out one after the other on substrates before and after the BST film deposition. The standard THz-TDS analysis of double-layer samples proved difficult to complete in the cases in which a thin or thick film is deposited on a much thicker substrate of known dielectric properties. However, we have been able to extract the complex dielectric permittivity in the THz domain for BST samples with thicknesses of few microns, by developing a specific procedure of data analysis.

3. Texture and interface characterization of iridium thin films grown on MgO substrates with different orientations

Authors: Trupina, L; Nedelcu, L; Banciu, MG; Crunteanu, A; Huitema, L; Constantinescu, C; Boulle, A

Published: FEB 2020, JOURNAL OF MATERIALS SCIENCE, 55, DOI: 10.1007/s10853-019-04004-7

Iridium thin films are grown by direct-current plasma magnetron sputtering, on MgO single-crystal substrates with various surface orientations, i.e. (100), (111), and (110). The surface morphology, the crystalline properties of the films, and the substrate-thin-film interface are investigated by atomic force microscopy, X-ray diffraction (XRD), focused ion beam scanning electron microscopy, and high-resolution transmission electron microscopy, respectively. The results reveal that hetero-epitaxial thin films with different crystallographic orientation and notable atomic scale smooth surface are obtained. From the XRD analysis, the following epitaxial relations are obtained: (1) (100)(Ir)||(100)(MgO) out-of-plane and [001](Ir)||[001](MgO) in-plane for Ir grown on MgO(100), (2) (110)(Ir)||(110)(MgO) out-of-plane and [1-10](Ir)||[1-10](MgO) in-plane for Ir grown on MgO(110), and (3) (111)(Ir)||(111)(MgO) out-of-plane and two variants for in-plane orientation [1-10](Ir)||[1-10](MgO) and [1-10](Ir)||[10-1](MgO), respectively, for Ir grown on MgO(111). Because of the large misfit strain (9.7%), the thin films are found to grow in a strain-relaxed state with the formation of geometrical misfit dislocations with a similar to 2.8-nm spacing, whereas thermal strain is stored upon cooling down from the growth temperature (600 degrees C). The best structural characteristics are obtained for the (111)-oriented films with a mosaicity of 0.3 degrees and vanishingly small lattice distortions. The (100)- and (110)-oriented films exhibit mosaicities of similar to 1.2 degrees and lattice distortions of similar to 1% which can be explained by the larger surface energy of these planes as compared to (111).

4. RETRACTION: Synthesis and properties of Ba(Zn1/3Ta2/3)O-3 for microwave and millimeter-wave applications (Retraction of Vol 516, Pg 1558, 2007)

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, CA; Alexandru, HV; Antohe, S; Andronescu, E; Jinga, S; Nita, P

Published: MAR 31 2020, THIN SOLID FILMS, 698, 137898, DOI: 10.1016/j.tsf.2020.137898

5. Performant Composite Materials Based on Oxide Semiconductors and Metallic Nanoparticles Generated from Cloves and Mandarin Peel Extracts

Authors: Zgura, I; Enculescu, M; Istrate, C; Negrea, R; Bacalum, M; Nedelcu, L; Barbinta-Patrascu, ME

Published: NOV 2020, NANOMATERIALS, 10, 2146, DOI: 10.3390/nano10112146

In this work, the metal and semiconducting nanoparticles (AgNPs, ZnONPs and AgZnONPs) were phyto-synthesized using aqueous vegetal extracts from: Caryophyllus aromaticus L. (cloves) and Citrus reticulata L. (mandarin) peels. The morphological, structural, compositional, optical and biological properties (antibacterial activity, and cytotoxicity) of the prepared composites were investigated. The most effective sample proved to be AgZnONPs, derived from cloves, with a minimum inhibitory concentration (MIC) value of 0.11 mg/mL and a minimum bactericidal concentration (MBC) value of 2.68 mg/mL. All the other three composites inhibited bacterial growth at a concentration between 0.25 mg/mL and 0.37 mg/mL, with a bactericidal concentration between 3 mg/mL and 4 mg/mL. The obtained composites presented biocidal activity against Staphylococcus aureus, and biocompatibility (on human fibroblast BJ cells) and did not damage the human red blood cells. Additionally, an important result is that the presence of silver in composite materials improved the bactericidal action of these nanomaterials against the most common nosocomial pathogen, Staphylococcus aureus.

6. EXPERIMENTAL STUDY OF TERAHERTZ RESPONSE FROM SOME FERROELECTRIC AND DIELECTRIC MATERIALS

Authors: Banciu, MG; Nedelcu, L; Furuya, T; Hrib, L; Geambasu, DC; Trupina, L; Pantelica, D; Mihai, MD; Tani, M

Published: OCT-DEC 2019, PROCEEDINGS OF THE ROMANIAN ACADEMY SERIES A-MATHEMATICS PHYSICS TECHNICAL SCIENCES INFORMATION SCIE, 20, DOI:

Barium strontium titanate (BST) ferroelectric layers were deposited on high resistivity Si substrates by Pulsed Laser Deposition and Radio Frequency sputtering. The stoichiometry was measured by using the Rutherford Backscattering technique at 3.041 MeV. For sub-THz measurements of Si samples, a new resonant method placing the sample between two flanged waveguides is proposed. In the THz range, the Time Domain Spectroscopy proved to be a reliable method. Both methods show effects due to the dielectric losses of BST in that frequency range.

7. Frequency selective surfaces with hexagonal elements for millimeter waves applications

Authors: Banciu, MG; Geambasu, DC; Nedelcu, L; Trupina, L

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, DOI:

Numerical investigations on a frequency selective surface using metalized strips deposited on high resistive silicon in a millimeter waves are presented in this paper. High resistivity Si substrate was chosen due to the very good transparence in millimeter waves. For simulations, normal incidence of millimeter waves alongside Floquet modes and ports are considered. Dependence of the frequency response with the geometrical parameters of the unit cell is discussed.

8. Growth of SrTiO3 Single Crystals with a Diameter of about 30 mm by the Verneuil Method

Authors: Tateno, Y; Endo, K; Arisawa, S; Vlaicu, AM; Nedelcu, L; Preda, N; Secu, M; Iordanescu, R; Kuncser, AC; Badica, P

Published: FEB 2019, CRYSTAL GROWTH & DESIGN, 19, DOI: 10.1021/acs.cgd.8b01004

The work demonstrates growth by the Verneuil method of SrTiO3 single crystals of 30 mm in diameter. Experiments are performed under an industrial environment. Growth was for 4.75 h, i.e., within one production shift. The optimum growth conditions for which the length of the region with bubbles D is zero and the effective length EL (i.e., the crystal length of commercial value) is maximized are for the amount of SrCO3 additive of similar to 3 wt % and for H-2 outer flow rate of similar to 35 L/min. These two parameters show the strongest influence on the bubble-free growth, but other growth parameters (H-2 inner flow rate, O-2 flow rate increase, rotation speed) were also optimized. Selected crystals are characterized from the structural, microstructural, optical, and THz spectroscopy viewpoints, and they are compared with a commercial substrate and with crystals reported in the literature. This work opens the possibility for the industrial growth of large SrTiO3 single crystals and commercialization of large area substrates.

9. Wet chemical synthesis of ZnO-CdS composites and their photocatalytic activity

Authors: Zgura, I; Preda, N; Socol, G; Ghica, C; Ghica, D; Enculescu, M; Negut, I; Nedelcu, L; Frunza, L; Ganea, CP; Frunza, S

Published: MAR 2018, MATERIALS RESEARCH BULLETIN, 99, DOI: 10.1016/j.materresbull.2017.11.013

The present study is focused on the wet chemical synthesis and the characterization of ZnO-CdS composites. The X-ray diffraction shows that the composites contain ZnO in hexagonal wurtzite structure and CdS in cubic phase. The scanning/transmission electron microscopy images reveal flower-like structures with different sizes depending on the CdS content. The optical investigations on composites reveal that the reflectance spectra disclose two thresholds of similar to 370 nm and similar to 460 nm associated with the ZnO and CdS, respectively. The photocatalytic activity measurements evidenced that the degradation efficiency of RhB in the presence of composites is higher comparatively with pristine ZnO, depending on the catalyst morphology, which varies with CdS content and the pH value of RhB solution. The electron paramagnetic resonance revealed the presence of the paramagnetic point defects in the samples. Thus, the wet chemical approaches are suitable for a large scale production of such ZnO-CdS composites having enhanced photocatalytic activity.

10. Intrinsic losses in dielectrics investigated by terahertz spectroscopy

Authors: Nedelcu, L; Geambasu, CD; Banciu, MG; Mogildea, G; Mogildea, M

Published: 2018, 2018 43RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), DOI:

Low-loss dielectrics with various microstructure and, consequently, different extrinsic losses were investigated by using terahertz time-domain spectroscopy. The losses have been extrapolated and compared with those measured at microwave frequencies. The results showed that extrinsic factors have a considerably contribution in microwave domain. The intrinsic limit of dielectric loss of low absorption polycrystalline materials have been estimated by terahertz spectroscopy.

11. GeSi nanocrystals in SiO2 matrix with extended photoresponse in near infrared

Authors: Stavarache, I; Nedelcu, L; Teodorescu, VS; Maraloiu, VA; Dascalescu, I; Ciurea, ML

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:

The films of SiGe nanocrystals in SiO2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.

12. Millimeter wave and Terahertz investigations on some dielectric materials

Authors: Banciu, MG; Furuya, T; Geambasu, DC; Nedelcu, L; Pantelica, D; Dracea, MD; Ionescu, P; Iuga, A; Chirila, C; Hrib, L; Trupina, L; Tani, M

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, DOI:

Investigations of barium strontium titanate (BST) layers deposited on MgO and Si substrates are presented. Since the Sr content determines the dielectric and optical properties of the BST layers at room temperature, accurate compositional analysis was performed by using Rutherford Backscattering technique at 3.041 Mev.

13. Microwave antenna array using new dielectric resonator antenna elements

Authors: Banciu, MG; Militaru, N; Martian, A; Nicolaescu, I; Tuta, L; Geambasu, DC; Nedelcu, L; Trupina, L; Ramer, R

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, DOI:

Investigations on antenna array for 5.8 GHz frequency band applications are presented in this paper. In order to enhance the characteristics of the dielectric resonator antenna elements, a pair of resonators with different sizes and dielectric constants is used. The antenna elements are connected to four daughter-boards of Universal Software Radio Peripherals, which perform the signal processing required by the sources detection and beamforming.

14. BST thin film capacitors integrated within a frequency tunable antenna

Authors: Rammal, M; Huitema, L; Crunteanu, A; Passerieux, D; Cros, D; Monediere, T; Madrangeas, V; Dutheil, P; Champeaux, C; Dumas-Bouchiat, F; Marchet, P; Nedelcu, L; Trupina, L; Banciu, G; Cernea, M

Published: 2016, 2016 IEEE INTERNATIONAL WORKSHOP ON ANTENNA TECHNOLOGY (IWAT), DOI:

Ferroelectric (FE) thin film varactors can be a convenient technology for tuning miniature antennas. In this paper we present the design of a compact, agile, wire patch antenna integrating barium strontium titanate (Ba(1-x)SrxTiO3, BST) thin film interdigitated capacitors (IDC). The IDCs values were measured at different temperatures and bias voltages ranging from 0 to 120 V showing a capacitance variation of more than 40% between 11-13 GHz and up to 28% in the 2-3 GHz frequency interval. Their integration within a compact antenna design allows tuning its operating frequency on the whole WiFi band, with efficiencies higher than 70%.

15. Electrical transport properties and modelling of electrostrictive resonance phenomena in Ba2/3Sr1/3TiO3 thin films

Authors: Ghalem, A; Huitema, L; Crunteanu, A; Rammal, M; Trupina, L; Nedelcu, L; Banciu, MG; Dutheil, P; Constantinescu, C; Marchet, P; Dumas-Bouchiat, F; Champeaux, C

Published: NOV 14 2016, JOURNAL OF APPLIED PHYSICS, 120, 184101, DOI: 10.1063/1.4966942

We present the conduction mechanisms of Ba2/3Sr1/3TiO3 thin films integrated in metal-insulatormetal (MIM) capacitors and the modelling of the frequency-dependent electrostrictive resonances (in the 100 MHz-10 GHz domain) induced in the devices upon applying different voltage biases. Au/BST/Ir MIM structures on MgO substrates have been fabricated and, depending on their specific polarization, we highlighted different conduction mechanisms in the devices. Depending on the dc bias polarity, the conduction current across the material shows a space-charge-limited-current behavior under negative polarization, whereas under positive bias, the conduction obeys an electrode-limited Schottky-type law at the Au/BST interface. The application of an electric field on the device induces the onset of acoustic resonances related to electrostrictive phenomena in the ferroelectric material. We modeled these acoustic resonances over a wide frequency range, by using a modified Lakin model, which takes into account the dispersions of acoustic properties near the lower electrode/thin film interface. Published by AIP Publishing.

16. Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere

Authors: Trupina, L; Nedelcu, L; Negrila, C; Banciu, MG; Huitema, L; Crunteanu, A; Rammal, M; Ghalem, A

Published: SEP 2016, JOURNAL OF MATERIALS SCIENCE, 51, DOI: 10.1007/s10853-016-0131-1

The growth and thermal stability of textured iridium thin films used as bottom electrode in electronic devices based on ferroelectric materials were investigated. The thin films were grown using the dc magnetron sputtering technique. The Ir layers directly deposited on SiO2/Si substrates present a mixed (111) and (200) orientations, while the films grown on Ti seed layers exhibit a strong preferred (111) orientation favoured by good matching with the titanium lattice. The substrate temperature during the growth of iridium/titanium stack has a significant effect on the surface morphology of the iridium layer and its thermal stability. The as-grown surface of 20-nm-thick Ir films is smooth, having a root-mean-square (rms) roughness of 0.7 nm. After thermal annealing the Ir film shows an increased surface roughness due to the formation of agglomerations. The change in the surface morphology of the Ir layer is due to titanium diffusion and its oxidation. Thicker and better crystallised iridium thin films annealed in oxygen atmosphere at 700 A degrees C show a good thermal stability with only a slight modification of the surface morphology. Within the limits of experimental error, there is no change in the electrical resistivity before and after thermal annealing. The rms roughness has not varied significantly and the XPS investigation shows no traces of titanium oxide on iridium surface. Ir/Ti stack deposited under the optimum conditions could be successfully used as electrode in devices based on oxide thin films.

17. Ultra-High Tunability of Ba(2/3)Sr(1/3) TiO3-Based Capacitors Under Low Electric Fields

Authors: Ghalem, A; Rammal, M; Huitema, L; Crunteanu, A; Madrangeas, V; Dutheil, P; Dumas-Bouchiat, F; Marchet, P; Champeaux, C; Trupina, L; Nedelcu, L; Banciu, MG

Published: JUL 2016, IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 26, DOI: 10.1109/LMWC.2016.2576455

We report the high-frequency electrical characterization of Ba2/3Sr1/3 TiO3 (BST) thin films exhibiting a very high dielectric tunability with low losses at 2.45 GHz under very low applied electrical fields. BST layers were integrated in out-of-plane Metal-Insulator-Metal (MIM) devices with optimized Ir/MgO(100) bottom electrodes. The high frequency properties of BST films with thicknesses of 200 nm, 450 nm and 1450 nm were thoroughly investigated in the 100 MHz-10 GHz domain and exhibit extremely high capacitance tuning abilities of 82%, 81% and 70% respectively, under applied voltages as low as 10 V. MIM devices responses show the onset of acoustic resonances associated with the BST electrostrictive behavior under an electric field. By combining high tunability with low resistive losses under low applied voltages, these devices are opening promising avenues for their integration in high-performance tunable devices in the microwave domain and particularly at 2.45 GHz, corresponding to the widely used ISM (industrial, scientific and medical) frequency band.

18. Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel technique

Authors: Huitema, L; Cernea, M; Crunteanu, A; Trupina, L; Nedelcu, L; Banciu, MG; Ghalem, A; Rammal, M; Madrangeas, V; Passerieux, D; Dutheil, P; Dumas-Bouchiat, F; Marchet, P; Champeaux, C

Published: APR 14 2016, JOURNAL OF APPLIED PHYSICS, 119, 144103, DOI: 10.1063/1.4945822

We report for the first time the microwave characterization of 0.92(Bi0.5Na0.5)TiO(3-)0.08BaTiO(3) (BNT-BT0.08) ferroelectric thin films fabricated by the sol-gel method and integrated in both planar and out-of-plane tunable capacitors for agile high-frequency applications and particularly on the WiFi frequency band from 2.4 GHz to 2.49 GHz. The permittivity and loss tangent of the realized BNT-BT0.08 layers have been first measured by a resonant cavity method working at 12.5 GHz. Then, we integrated the ferroelectric material in planar inter-digitated capacitors (IDC) and in out-of-plane metal-insulator-metal (MIM) devices and investigated their specific properties (dielectric tunability and losses) on the whole 100 MHz-15 GHz frequency domain. The 3D finite-elements electromagnetic simulations of the IDC capacitances are fitting very well with their measured responses and confirm the dielectric properties determined with the cavity method. While IDCs are not exhibiting an optimal tunability, the MIM capacitor devices with optimized Ir/MgO(100) bottom electrodes demonstrate a high dielectric tunability, of 30% at 2.45 GHz under applied voltages as low as 10 V, and it is reaching 50% under 20V voltage bias at the same frequency. These high-frequency properties of the MIM devices integrating the BNT-BT0.08 films, combining a high tunability under low applied voltages indicate a wide integration potential for tunable devices in the microwave domain and particularly at 2.45 GHz, corresponding to the widely used industrial, scientific, and medical frequency band. (C) 2016 AIP Publishing LLC.

19. New antennas with dielectric resonators of axial symmetry

Authors: Geambasu, DC; Banciu, MG; Nedelcu, L; Ramer, R

Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), DOI:

New type of dielectric resonator antennas (DRAs) with axial symmetry are proposed for frequencies around 5.8 GHz. Each element uses a high permittivity cylindrical resonator and a low permittivity resonator of a truncated cone shape. Two types of microstrip-fed DRAs were investigated. By coupling the resonance modes, the first type and the second type DRA exhibit fractional impedance bandwidth of 15.6% and 19.7%, respectively.

20. Submillimeter-wave properties of Zn2SiO4 ceramics

Authors: Nedelcu, L; Geambasu, CD; Banciu, MG; Iwamae, A; Furuya, T; Tani, M

Published: 2015, , DOI:

Zinc silicate ceramics have been prepared by using conventional ceramic technology. Morphological, structural, and dielectric characterizations of the samples were performed using scanning electron microscopy, X-ray diffraction, and terahertz time-domain spectroscopy. The achieved absorption properties of zinc silicates make them very attractive solutions for submillimeter-wave applications.

21. Electro-Optic Sampling of Terahertz Pulses Using BaTiO3 in Non-Collinear Cherenkov Phase-Matching Scheme

Authors: Ozawa, S; Hori, T; Azuma, S; Funkner, S; Niehues, G; Yamamoto, K; Furuya, T; Kitahara, H; Banciu, G; Nedelcu, L; Estacio, E; Bakunov, MI; Tani, M

Published: 2015, 2015 40TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES (IRMMW-THZ), DOI:

In this paper we report electro-optic (EO) sampling of THz pulses using ferroelectric crystal in the non-collinear Cherenkov phase-matching scheme, where an effective velocity matching is achieved in an EO crystal with a large refractive index in the THz frequency region. We demonstrate efficient THz EO sampling using LiNbO3 and BaTiO3 crystals in the Cherenkov-phase-matching scheme. It is shown that the efficiency of EO sampling with BaTiO3 is smaller than that with LiNbO3, even though the EO coefficient (r(33)) of BaTiO3 is three times higher than that of LiNbO3. The reason of the poor performance of BaTiO3 is attributed to the strong absorption in the THz frequency region.

22. High-Order Modes in High Permittivity Cylindrical Dielectric Resonator Antenna Excited by a Wide Microstrip Line

Authors: Avadanei, OG; Banciu, MG; Nedelcu, L

Published: 2014, 2014 10TH INTERNATIONAL CONFERENCE ON COMMUNICATIONS (COMM), DOI:

The aim of the paper is to identify the modes that can be excited by a wide microstrip line, in a cylindrical DRA situated symmetrically above it, to study the radiating performances of these modes and to present their radiating patterns. We managed to identify thirteen high-order modes; among these modes, four of them: HEM112, TMme(311), TEme(112), and TEme(121) have high transmission performances.

23. Higher-Order Modes in High-Permittivity Cylindrical Dielectric Resonator Antenna Excited by an Off-Centered Rectangular Slot

Authors: Avadanei, OG; Banciu, MG; Nedelcu, L

Published: 2014, IEEE ANTENNAS AND WIRELESS PROPAGATION LETTERS, 13, DOI: 10.1109/LAWP.2014.2344860

In this letter, we study the higher-order modes excited in a high-permittivity cylindrical dielectric resonator antenna (DRA), situated asymmetrically on top of a rectangular slot in the ground plane of a microstrip line. Besides the modes excited by a symmetric positioning of the DRA above the feeding slot, we identified five new modes: TEme(010), TEme(011), TEme(210), TEme(020), and TM212 respectively. The higher-order modes offer to the DRA antenna some interesting features: They have different radiation patterns for different operating modes; modes with close resonance frequency give wideband capabilities; and sometimes, when a mode has poor performance in one polarization, it is possible that another mode with close frequency can compensate it.

24. Compact antenna using ZST low-loss high dielectric constant material

Authors: Geambasu, DC; Leontin, T; Banciu, MG; Nedelcu, L; Nicolaescu, I

Published: 2014, 2014 22ND TELECOMMUNICATIONS FORUM TELFOR (TELFOR), DOI:

Investigations on compact dielectric resonator antennas arc presented. Low-loss, high dielectric constant zirconium tin titanate (ZST) material was prepared by using solid state reaction method. The ZST resonators exhibit 36 dielectric relative permittivity, dielectric loss tangent 5x10(-4) and resonant frequency temperature coefficient between -4 to +4 ppm/degrees C. The developed resonators are very attractive for probe-fed resonator antenna for 2.66 GHz.

25. Structural and dielectric properties of Ba(X1/3Ta2/3)O-3 thin films grown by RF-PLD

Authors: Nedelcu, L; Scarisoreanu, ND; Chirila, C; Busuioc, C; Banciu, MG; Jinga, SI; Dinescu, M

Published: AUG 1 2013, APPLIED SURFACE SCIENCE, 278, DOI: 10.1016/j.apsusc.2012.10.124

Ba(X1/3Ta2/3)O-3 (X = Mg, Zn) thin films were grown on commercial Pt-coated Si substrates by radiofrequency plasma beam assisted pulsed laser deposition (RF-PLD) method. Single phase Ba(Mg1/3Ta2/3)O-3 and Ba(Zn1/3Ta2/3)O-3 ceramic targets having an ordered hexagonal structure (with P (3) over bar m1 space group) were used for deposition. Structural, morphological and surface characterizations of the Ba(X1/3Ta2/3)O-3 (BXT) films were performed using X-ray diffraction, scanning electron microscopy and atomic force microscopy. X-ray diffraction studies evidenced a cubic (disordered) perovskite structure, with unit cell typical for Pm3m space group. Scanning electron microscopy investigations showed that BXT films have a columnar microstructure, which is oriented perpendicular to the substrate. The temperature dependence of the dielectric permittivity of the films was recorded at 100 kHz. Unlike targets, the BXT films exhibit positive values of the temperature coefficient of the dielectric permittivity. BaMg1/3Ta2/3O3 and BaZn1/3Ta2/3O3 thin films with dielectric constant of about 22.5 and 25, respectively have been obtained. (C) 2012 Elsevier B.V. All rights reserved.

26. Synthesis and properties of Ba(Zn1/3Ta2/3) O-3 for microwave and millimeter-wave applications (vol 516, pg 1558 , 2008)

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, CA; Alexandru, HV; Antohe, S; Andronescu, E; Jinga, S; Nita, P

Published: DEC 2 2013, THIN SOLID FILMS, 548, DOI: 10.1016/j.tsf.2013.10.132

27. Ba(Zn1/3Ta2/3)O-3 perovskite ceramics doped with Nb5+, Ce4+ or Yb3+

Authors: Busuioc, C; Jinga, SI; Stoleriu, S; Nedelcu, L; Andronescu, E

Published: MAR-APR 2012, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 14, DOI:

Ba(Zn1/3Ta2/3)O-3 (BZT) perovskite material has stimulated a large interest due to its excellent dielectric properties in microwave frequency range, enabling the miniaturization of communications devices. In this work, BZT ceramics were prepared by the conventional solid-state reaction method, being doped with Nb5+, Ce4+ or Yb3+. BZT resonators were compositional, structural, morphological and electrical characterized. The influence of the dopants and sintering temperature on the microwave dielectric properties of BZT samples was investigated. The resonator doped with 0.5 mol% Nb2O5 and sintered at 1600 degrees C / 2 h exhibits the best dielectric behaviour: e(r) similar to 25.9 and Qxf similar to 159 THz.

28. Ba(X1/3Ta2/3)O-3 COMPLEX PEROVSKITES FOR MICROWAVE AND MILLIMETER-WAVE APPLICATIONS

Authors: Nedelcu, L; Busuioc, C; Banciu, MG; Ramer, R

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, DOI:

Ba(X1/3Ta2/3)O-3 (X = Zn, Mg) perovskites were prepared by using the solid state reaction method. X-ray diffraction and scanning electron microscopy were employed for structural and morphological characterization of Ba(X1/3Ta2/3)O-3 samples. The dielectric constant of the resonators was 28 for Ba(Zn1/3Ta2/3)O-3 and 24 for Ba(Mg1/3Ta2/3)O-3. A strong influence of the cation ordering on the dielectric loss has been found. The achieved values of Q x f product, ranging from 100 to 200 THz, make Ba(X1/3Ta2/3)O-3 dielectric resonators attractive for microwave and millimetre-wave applications.

29. Cylindrical resonator antenna manufactured with Barium Neodymium Titanate

Authors: Nicolaescu, I; Avadanei, OG; Nedelcu, L; Toacsan, MI; Banciu, MG; Andrei, I; Balmus, SB

Published: NOV-DEC 2012, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 14, DOI:

The rapid evolution of GPS, mobile and wireless communication systems in the last years is based, substantially, on ceramic based dielectrics with effect on miniaturization of components (antennas, filters, oscillators), cost and temperature stability. The development of high dielectric constant materials was critical for the dimensions reduction of the equipment but also for their performance improvements. These materials have high dielectric constant, epsilon(r), between 20 and 90; low losses in microwave and millimetre wave domain and a low variation of dielectric constant with the temperature. The paper describes a high dielectric constant material, Barium Neodymium Titanate - (Ba,Pb)Nd2Ti4O12 (BNT), and presents some results obtained by using this ceramic based material to manufacture a dielectric resonator antenna.

30. Superior Modes in High Permittivity Cylindrical Dielectric Resonator Antenna Excited by a Central Rectangular Slot

Authors: Avadanei, OG; Banciu, MG; Nicolaescu, I; Nedelcu, L

Published: NOV 2012, IEEE TRANSACTIONS ON ANTENNAS AND PROPAGATION, 60, DOI: 10.1109/TAP.2012.2207692

High permittivity materials allow good miniaturization of microwave components, but the dielectric resonator antenna using these materials has the drawback of a reduced bandwidth. To overcome this disadvantage we wanted to obtain a relatively wideband high permittivity DRA using the superior modes. Using HFSS simulations, we identified some of the superior modes that appear in cylindrical DRAs situated on a conductor ground plane and excited by a symmetric rectangular slot made in the ground plane. We identified seven superior modes and, for all of them, the measured and theoretically calculated resonant frequencies did not differ by more than 6%. Knowing the possible excited modes in the antenna and the relations for their resonant frequencies, one can predict the operating frequencies of a cylindrical DRA excited by a central rectangular slot.

31. Dielectric properties of Ba(Zn1/3Ta2/3)O-3 thin films on Pt-coated Si substrates

Authors: Nedelcu, L; Mandache, NB; Toacsan, MI; Vlaicu, AM; Banciu, MG; Ioachim, A; Gherendi, F; Luculescu, CR; Nistor, M

Published: NOV 1 2012, THIN SOLID FILMS, 522, DOI: 10.1016/j.tsf.2012.09.002

Ba(Zn1/3Ta2/3)O-3 (BZT) thin films were grown on Pt-coated Si substrates at 500 degrees C substrate temperatures by pulsed electron beam deposition method and post-annealed at 600 and 650 degrees C for 1 h. The X-ray diffraction patterns indicate that the as-grown films are partially crystallized but single-phase cubic perovskite structure was formed in annealed films. The temperature dependence of the dielectric constant of the BZT films was recorded in the -100 to + 100 degrees C range. The annealing treatment induces a decrease of the temperature coefficient of the dielectric permittivity with an order of magnitude, from 2000 to 100 ppm/degrees C. The influence of the annealing treatments on the temperature behavior of the BZT films was evidenced; a dielectric constant of about 21 at room temperature was obtained for the films annealed at 650 degrees C. (C) 2012 Elsevier B. V. All rights reserved.

32. Microwave antennas based on Ba1-xPbxNd2Ti5O14

Authors: Ene-Dobre, M; Banciu, MG; Nedelcu, L; Stoica, G; Busuioc, C; Alexandru, HV

Published: SEP-OCT 2011, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 13, DOI:

The Ba1-xPbxNd2Ti5O14 ceramic material (BNT) is very attractive for applications at frequencies around few GHz [1]. The temperature coefficient of the resonant frequency T-f decreases from + 70 ppm/degrees C to - 15 ppm/degrees C with the Pb content x increase up to 0.5. The samples with high Pb content exhibit a dielectric constant up to 86.6, but the product Q x f is several times lower than for such microwave ceramics as zirconium tin titanate [1-2]. When a product Q x f higher than 6000 is required in order to use the BNT materials at high frequencies, then the Pb content can result from the tradeoff between small temperature coefficient T-f and high quality factor Q. The features of the BNT dielectric resonators lead to the development of miniaturized dielectric resonator antenna (DRA) with improved characteristics. The DRAs of BNT ceramics presented in this paper exhibit an increased bandwidth due to an optimal height over diameter ratio. For an increased gain and shaping of the overall radiation pattern, an array of dielectric resonator antennas is proposed.

33. Synthesis and dielectric characterization of Ba0.6Sr0.4TiO3 ferroelectric ceramics

Authors: Nedelcu, L; Ioachim, A; Toacsan, M; Banciu, MG; Pasuk, I; Berbecaru, C; Alexandru, HV

Published: JUN 30 2011, THIN SOLID FILMS, 519, DOI: 10.1016/j.tsf.2010.12.191

Ferroelectric ceramics Ba0.6Sr0.4TiO3 (BST 40) were prepared, by solid-state reaction in the temperature range 1210-1450 degrees C. Maximum values of the ceramic densities were around 94% of their theoretical value. X-ray diffraction techniques (XRD) and scanning electron spectroscopy (SEM) were used to analyze the structure and the surface morphology of ceramics. Rounded, well defined or abnormal granular growth was observed in the SEM images, vs. sintering conditions and purity of the raw materials. In all samples, BST 40 ceramic is the major phase, but there are also present small amounts of secondary phases, as revealed in XRD diffraction patterns. Permittivity and dielectric loss measurements were performed in the temperature range - 150 to + 150 degrees C, and 150 Hz-5 MHz frequency values. Permittivity values rising from 1200 to 12,500, with increasing sintering temperatures, were recorded. Narrow and well defined transition peaks were noticed at higher sintering temperatures. Curie temperature was around 2 degrees C, for samples with the mentioned composition. Permittivity and losses vs. frequency show different behavior whether BST ceramics are in polar or non-polar state and with the distance toward phase transition. Microwave measurements performed at room temperature have shown lower values of permittivity, compared with similar data at low frequency, and dielectric losses lower than 1% at 0.7 GHz. The sintering conditions (temperatures, sintering time, etc.) and purity of the raw materials lead to important changes of transition temperatures in the polymorphic diagram, which we have built-for the other Ba1 - xSrxTiO(3) compositions (x = 0.25-0.90) sintered at 1260 degrees C for 2 h. (C) 2011 Elsevier B.V. All rights reserved.

34. Microwave properties of Ba(Zn1/3Ta2/3)O-3 dielectric resonators

Authors: Nedelcu, L; Toacsan, MI; Banciu, MG; Ioachim, A

Published: JAN 12 2011, JOURNAL OF ALLOYS AND COMPOUNDS, 509, DOI: 10.1016/j.jallcom.2010.09.069

Ba(Zn1/3Ta2/3)O-3 (BZT) dielectric resonators were prepared by solid-state reaction. The starting materials were BaCO3, ZnO, and Ta2O5 powders with high purity. The double calcined BZT pellets were sintered in air at temperatures of 1575, 1600, 1625, and 1650 degrees C for 4 h. The X-ray diffraction data allowed the study of the unit cell distortion degree and the presence of the secondary phases. A long-range order with a 2:1 ratio of Ta and Zn cations on the octahedral positions of the perovskite structure was observed with the increase of the sintering temperature. The dielectric constant of BZT resonators measured around 6 GHz was between 26 and 28. High values of Q x f product (120 THz) were obtained for BZT resonators sintered at 1650 degrees C/4 h. The temperature coefficient of the resonance frequency exhibits positive values less than 6 ppm/degrees C. The achieved dielectric parameters recommend BZT dielectric resonators for microwave and millimeter wave applications. (C) 2010 Elsevier B.V. All rights reserved.

35. BNT ADVANCED CERAMICS FOR SLOT COUPLED DIELECTRIC RESONATOR ANTENNAS

Authors: Nicolaescu, I; Banciu, MG; Nedelcu, L; Avadanei, O; Radu, I

Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, DOI:

Barium neodymium titanate (BNT) material was prepared and characterized. The very high dielectric constant, high Qxf product and controllable temperature coefficient recommend the BNT material for microwave applications. Slot coupled antennas with BNT resonators are investigated. The resonator shape effect on the antenna bandwidth is discussed.

36. Barium magnesium tantalate thin films deposited by RF-magnetron sputtering from a stoichiometric target

Authors: Braic, V; Kiss, A; Ioachim, A; Toacsan, M; Nedelcu, L; Braic, M

Published: DEC 2010, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 12, DOI:

Barium magnesium tantalate thin films are attractive materials for high-performance dielectric ceramics for microwave devices, exhibiting a high dielectric constant, a low loss and a near-zero temperature coefficient. We report on the successful deposition of polycrystalline barium magnesium tantalate thin films by RF magnetron sputtering method. The structural and morphological characterization data are presented.

37. Optical and structural studies on Ba(Mg1/3Ta2/3)O-3 thin films obtained by radiofrequency assisted pulsed plasma deposition

Authors: Scarisoreanu, ND; Galca, AC; Nedelcu, L; Ioachim, A; Toacsan, MI; Morintale, E; Stoica, SD; Dinescu, M

Published: SEP 1 2010, APPLIED SURFACE SCIENCE, 256, DOI: 10.1016/j.apsusc.2010.04.041

Single-phase Ba(Mg1/3Ta2/3)O-3 thin films were prepared by radiofrequency plasma beam assisted pulsed laser deposition (RF-PLD) starting from a bulk ceramic target synthesized by solid state reaction. Atomic force microscopy, X-ray diffraction and spectroscopic ellipsometry were used for morphological, structural and optical characterization of the BMT thin films. The X-ray diffraction spectra show that the films exhibit a polycrystalline cubic structure. From spectroscopic ellipsometry analysis, the refractive index varies with the thin films deposition parameters. By using the transmission spectra and assuming a direct band to band transition a band gap value of approximate to 4.72 eV has been obtained. (C) 2010 Elsevier B.V. All rights reserved.

38. Dielectric resonator antennas of ZST advanced cerramics

Authors: Ene-Dobre, M; Banciu, MG; Nedelcu, L; Ioachim, A; Alexandru, HV

Published: SEP 2010, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 12, DOI:

Investigations on dielectric on compact resonators antennas with enhanced characteristics are described in this paper. The dielectric resonators were of (Zr(0.8)Sn(0.2))TiO(4) ceramic material (ZST). It is shown that the doping with Mg reduces the sintering temperature and provides a high dielectric constant, low loss and high thermal stability in microwaves. The coupling with an extra resonator can offer a substantial bandwidth enhancement. Moreover, antenna array with four antenna elements provides a higher gain and a more directive radiation pattern.

39. Synthesis and characterization of doped Ba(Mg1/3Ta2/3)O-3 ceramics

Authors: Jinga, C; Andronescu, E; Jinga, S; Ioachim, A; Nedelcu, L; Toacsan, MI

Published: FEB 2010, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 12, DOI:

Ba(Mg1/3Ta2/3)O-3 (BMT) ceramic is a dielectric material possessing an extremely high Qxf product value (up to 400 THz) at microwave frequencies. This makes it suitable for applications as a dielectric resonator for wireless communications. BMT samples, prepared by solid-state reaction and doped with Nb5+, V5+ or Ga3+, were employed for compositional, structural morphological characterization. In the present study, we report on the influence of dopants (type and quantity) and sintering temperature on the dielectric properties. It was found that the quality factor is maximum when Nb5+ is used as dopant.

40. Dielectric Properties of Paraelectric Ba1-xSrxTiO3 Ceramics

Authors: Nedelcu, L; Toacsan, MI; Banciu, MG; Ioachim, A

Published: 2009, FERROELECTRICS, 391, DOI: 10.1080/00150190903001086

Ba1-xSrxTiO3 solid solutions with x = 0.4, 0.5, 0.6 and 0.75 were prepared by solid state reaction at 1260 degrees C. The complex dielectric constant dispersion was investigated in the frequency range 1Hz divided by 10 MHz for temperatures between -100 degrees C and 100 degrees C. Microwave measurements, performed at room temperature, show amonotonically decrease of the permittivity from about 3000 to 300 with the increase of the strontium content. Moreover, the variation of the dielectric loss from 0.8% to less than 0.2% with the increase with x was observed. The results indicate that the paraelectric Ba1-xSrxTiO3 materials are suitable for microwave applications.

41. Ba(Zn1/3Ta2/3)O-3 Ceramics for Microwave and Millimeter-wave Applications

Authors: Alexandru, HV; Ioachim, A; Toacsan, MI; Nedelcu, L; Banciu, MG; Berbecaru, C; Voicu, G; Jinga, S; Andronescu, E

Published: 2009, INTERDISCIPLINARY TRANSPORT PHENOMENA: FLUID, THERMAL, BIOLOGICAL, MATERIALS, AND SPACE SCIENCES, 1161, DOI: 10.1111/j.1749-6632.2008.04077.x

The Ba(Zn1/3Ta2/3)O-3 (BZT) ceramic samples were prepared by solid-state reaction and sintered in the range 1550-1650 degrees C for 2 h. Several methods-X-ray diffraction (XRD) and scanning electron microscopy (SEM)-were used for structural and morphological characterization. The unit cell distortion and the presence of the secondary phase content were studied by XRD. A long-range order with a 2:1 ratio of Ta and Zn cations on the octahedral positions of the perovskite structure was noticed with the increase of the sintering temperature. SEM investigations revealed polyhedral well-faceted grains and large grain size distribution. The dielectric properties in the microwave range were measured at room temperature and at 1 kHz on a large temperature interval (+/- 150 degrees C). The dielectric parameters were correlated with morphological and structural properties. Ceramic samples were annealed at 1410 degrees C for 30 h to improve the microwave properties. The dielectric constant of BZT samples measured at 6 GHz and at 1 kHz was between 27 and 28 on the whole temperature range, that is, typical values for BZT material. The temperature coefficient of the resonance frequency at 6 GHz exhibits positive values less than 6 ppm/degrees C.

42. PLD and RF-PLD synthesis of Ba0.6Sr0.4TiO3 ferroelectric thin films for electrically controlled devices

Authors: Nedelcu, L; Ioachim, A; Toacsan, MI; Banciu, MG; Pasuk, I; Buda, M; Scarisoreanu, N; Ion, V; Dinescu, M

Published: NOV 2008, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 93, DOI: 10.1007/s00339-008-4694-9

Ba0.6Sr0.4TiO3 (BST) bulk ceramic synthesized by solid state reaction was used as target for thin films grown by pulsed laser deposition (PLD) and radiofrequency beam assisted PLD (RF-PLD). The X-ray diffraction patterns indicate that the films exhibit a polycrystalline cubic structure with a distorted unit cell. Scanning Electron Microscopy investigations showed a columnar microstructure with size of spherical grains up to 150 nm. The capacitance-voltage (C-V) characteristics of the BST films were performed by applying a DC voltage up to 5 V. A value of 280 for dielectric constant and 12.5% electrical tunability of the BST capacitor have been measured at room temperature.

43. InN thin films deposited on flexible substrates by reactive RF-magnetron sputtering

Authors: Zoita, NC; Besleaga, C; Braic, L; Mitran, T; Grigorescu, C; Nedelcu, L

Published: NOV 2008, OPTOELECTRONICS AND ADVANCED MATERIALS-RAPID COMMUNICATIONS, 2, DOI:

Indium nitride is an attractive semiconductor material for optoelectronic applications, high-speed electronics and solar cells. We report successful deposition of polycrystalline InN thin films onto kapton polyimide flexible substrates by reactive RF magnetron sputtering method. The optical, structural and morphological characterization data are presented.

44. Ceramic materials Ba(1-x)SrxTiO3 for electronics - Synthesis and characterization

Authors: Berbecaru, C; Alexandru, HV; Porosnicu, C; Velea, A; Ioachim, A; Nedelcu, L; Tonsan, M

Published: SEP 30 2008, THIN SOLID FILMS, 516, DOI: 10.1016/j.tsf.2008.04.031

Ceramics (Ba1-xSrx)TiO3, (BST) with x=0.25; 0.35; 0.40; 0.50; 0.60; 0.75; 0.90 were prepared by sintering method from BaCO3, SrCO3 and TiO2 of high purity (99.98%). The solid-state reaction was employed to obtain pure and doped BST ceramic samples. In order to improve the sintering process the following additives were added: 1.0 wt.% MgO and 1 wt.% MnO2. The sintering treatment was performed in die temperature range 1200 to 1260 degrees C, for 2 h. Archimedean method was used for ceramic density measurements, which was found to depend linearly on strontium content: rho(x)=5.4(2)-0.8(8).x, (g/cm(3)). SEM, EDX and XRD methods were used for sample characterization. Morphology, pores and grain size distribution of both pure and doped ceramics were investigated by SEM analysis. A bimodal grain distribution could be observed in pure BST for x <= 0.25, whereas a uniform one was noticed for doped samples of x = 0.25. Well faceted grains of similar to 5 pm size, Could be seen for x=0.75 samples. Pores size has grown with the increase of Sr content. X-ray diffraction patterns have shown a dominant perovskite structure and some other minor phases. Dielectric permittivity and loss were investigated at 1kHz, in the temperature range - 150 to + 150 degrees C, at a pace of similar to 2 degrees C /min. Sharp transitions, with higher peaks values of permittivity were noticed with the increase of the sintering temperature. A shift Of the Curie points to lower values was noticed with the increase of Sr content, according to the equation: Tc = 127.4-331.x. Measured at room temperature, in the frequency range of similar to 1 GHz, permittivity was found to increase and losses to decrease with the sintering temperature. For x <= 0.35 permittivity of the samples, being in the ferroelectric phase could not be measured in microwave domain at room temperature. Our results point to important application of these BST compositions for microwave devices. (C) 2008 Elsevier B.V. All rights reserved.

45. Synthesis and properties of Ba(Zn1/3Ta2/3)O-3 for microwave and millimeter wave applications

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, CA; Alexandru, HV; Antohe, S; Andronescu, E; Jinga, S; Nita, P

Published: FEB 15 2008, THIN SOLID FILMS, 516, DOI: 10.1016/j.tsf.2007.03.151

High dielectric materials have gained an important position in microwave electronics by reducing the size and cost of components for a wide range of applications from mobile telephony to spatial communications. Ba(Zn1/3Ta2/3)O-3 (BZT) is an A(B'B '')O-3 type perovskite material, showing ultra high values of the quality factor Q. Ceramic-based BZT dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1400 divided by 1600 degrees C for 4 h. Compositional, structural and morphological characterization were performed by using XRD, SEM and EDX analysis. The dielectric properties were measured in the microwave range (6 divided by 7 GHz). An additional annealing at 1400 degrees C for 10 h has improved some dielectric parameters. For samples sintered at temperatures higher than 1500 degrees C, the permittivity values were obtained in the interval 30 divided by 35 and almost do not change the value after the annealing. The Q x f product substantially increases up to about 135,000 GHz, exhibiting a low temperature coefficient of the resonant frequency (tau(f)) in microwaves. The best parameters were obtained for the samples sintered at 1600 degrees C with additional annealing. The achieved high values of the Q x f product recommend these materials for microwave and millimeter wave applications. (C) 2007 Elsevier B.V. All rights reserved.

46. Correlation of Structural and MW-MMW Dielectric Properties with Vibrational Modes in BaX1/3Ta2/3O3 Complex Perovskites

Authors: Toacsan, MI; Ioachim, A; Nedelcu, L; Banciu, MG; Mihut, L; Szilagyi, A

Published: 2008, 2008 33RD INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER AND TERAHERTZ WAVES, VOLS 1 AND 2, DOI:

Ceramic based Ba(Zn1/3Ta2/3)O-3 materials were prepared by solid-state reaction. Studies on microwave dielectric parameters in correlation with structural and Raman investigations were performed. Sintering temperatures higher than 1600 degrees C are required in order to obtain dielectric properties suitable for millimeter wave applications.

47. Radiation characteristics of a novel compact microstrip patch resonator

Authors: Militaru, N; Banciu, MG; Nedelcu, L; Lojewski, G

Published: 2008, ECCSC 08: 4TH EUROPEAN CONFERENCE ON CIRCUITS AND SYSTEMS FOR COMMUNICATIONS, DOI: 10.1109/ECCSC.2008.4611680

In this paper a new type of dual-mode compact resonator for mobile communication systems, in the 900 MHz frequency band, is investigated. This compact planar resonator, developed on a 0.635 mm substrate with a 10.8 dielectric constant, has a square shape with an edge of 20.5 mm. For this dual resonator, several methods of modes coupling were considered. The radiation characteristics of this new resonator were investigated.

48. The effects of thermal treatments on microwave dielectric properties of Ba(Zn1/3Ta2/3.)O-3 ceramics

Authors: Ioachim, A; Nedelcu, L; Andronescu, E; Jinga, S; Toacsan, MI; Banciu, MG; Lorinczi, A; Popescu, M

Published: JAN 2008, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 10, DOI:

Ba(Zn1/3Ta2/3)O-3 (BZT) dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1550 divided by 1650 degrees C for 2 h. XRD, SEM and EDX were employed for compositional, structural and morphological characterization. An additional annealing at 410 degrees C for 10 hours was performed in order to improve the dielectric parameters. The dielectric constant and quality factor of BZT dielectric resonators measured by using Hakki-Coleman method around 6 GHz was between 25 and 29. The temperature coefficient of the resonance frequency exhibits positive values less than 6 ppm/degrees C. The best parameters of BZT dielectric resonators were achieved for the samples sintered at 1650 degrees C with additional thermal treatment (square(r) = 29, Q x f = 100 THz).

49. High-Q BZT ceramics for microwave applications

Authors: Ioachim, A; Toacsan, MI; Nedelcu, L; Mihut, L

Published: 2008, PROCEEDINGS OF THE 6TH WSEAS INTERNATIONAL CONFERENCE ON APPLIED ELECTROMAGNETICS, WIRELESS AND OPTI, DOI:

Ba(Zn1/3Ta2/3)O-3 (BZT) ceramics were prepared by solid-state reaction and sintered in air at temperatures in the range 1550-1650 degrees C, for 2 hours. In order to improve the microwave and millimeter wave properties, annealing treatment at 1400 degrees C for 10 hours was applied. The long-range order with a 2:1 ratio of Ta and Zn ions on the octahedral positions of the perovskite structure and the vibrational modes were investigated by using XRD and Raman spectroscopy as function of sintering temperature. Presence of small amount of secondary phase, Ba8ZnTa6O24, affects Q factor even in the dense, highly ordered samples. The dielectric parameters were measured in the microwave range by Hakki-Coleman method and were correlated with structural and optical properties. Sintering temperature higher than 1600 degrees C are required for BZT ceramics in order to obtain low microwave loss (Q x f similar to 100 THz).

50. BST thin films obtained by PLD for applications in electronics

Authors: Scarisoreanu, N; Filipescu, M; Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, A; Buda, M; Alexandru, HV; Dinescu, M

Published: JUL 31 2007, APPLIED SURFACE SCIENCE, 253, DOI: 10.1016/j.apsusc.2007.02.111

Barium strontium titanate (BST) bulk ceramic with composition Ba0.5Sr0.5TiO3 was produced by solid-state reaction and was used as target for PLD thin film deposition. A Nd-YAG laser, working at 5-10 Hz and different wavelengths has been used. Thin films of stoichiometric BST were deposited on alumina substrate with the thickness between 400 and 500 nm. An aditional annealing was carried out at 800 degrees C for 6 h. XRD and SEM were used for sample characterization. Capacity measurements were performed versus temperature at 100 kHz in a large temperature range. A diffuse ferroelectric-paraelectric phase transition with T-C = -72 degrees C for the BST thin film was determined. A 5% tunability was measured in the transition region. (c) 2007 Elsevier B.V. All rights reserved.

51. Transitions of barium strontium titanate ferroelectric ceramics for different strontium content

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, A; Antohe, S; Berbecaru, C; Georgescu, L; Stoica, G; Alexandru, HV

Published: JUN 4 2007, THIN SOLID FILMS, 515, DOI: 10.1016/j.tsf.2006.11.097

Ceramic based barium strontium titanate (BST) solid solutions with the formula Ba1-xSrxTiO3 are very important candidates for a wide range device applications. Several doped (Mn and Mg) and undoped samples were prepared by standard solid-state reaction. Special emphasis was put on compositions with x=0.35 and 0.60, with high potential for applications. The samples were sintered at temperatures in the 1200 divided by 1260 degrees C range. Structural X-ray diffraction analysis preformed confirms the perovskite structure. The dielectric parameters were investigated in a wide temperature range between - 150 and 150 degrees C. The temperature was cyclically changed in both directions, up and down, at a rate of less than 2 degrees C/ min. Both permittivity and dielectric loss were measured at low frequencies, 1 kHz. The peak values of the permittivity are increasing from 2000 to 4000 with the sintering temperature increase. Moreover the dielectric parameters were measured at room temperature in microwave domain (1 divided by 2 GHz). The Curie temperature of BST samples with x=0.35 and x=0.6 is in agreement with the Curie point dependence on Sr content, as we have previously reported. (C) 2007 Published by Elsevier B.V.

52. Magnesium doped (Zr-0.8, Sn-0.2)TiO4 ceramics for microwave devices

Authors: Nedelcu, L; Ioachim, A; Toacsan, MI; Banciu, MG; Dutu, CA; Lifei, F; Vasiliu, F; Stoica, G

Published: JUN 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, DOI:

Magnesium doped (Zr0.8Sn0.2)TiO4 material has been prepared by solid state reaction and characterized. The samples were sintered in the temperature range of 1270 divided by 1315 degrees C for 2 hours. The effect of sintering temperature on structural and dielectric properties was investigated. The 0.2 wt.% MgO addition improves the sintering process and well sintered samples with a high value of bulk density were achieved. The material exhibits a dielectric constant epsilon(r) similar to 36.6 and high values of the Qxf product, greater than 61000 at microwave frequencies. The dielectric properties make the magnesium doped (Zr0.8Sn0.2)TiO4 material very attractive for such microwave applications as dielectric resonators, filters, dielectric antennas, substrates for hybrid microwave integrated circuits, etc.

53. Dielectric properties of BZT ceramics for microwave applications

Authors: Ioachim, A; Toacsan, MI; Nedelcu, L; Banciu, MG; Dutu, CA; Andronescu, E; Jinga, S; Nita, P; Alexandru, HV

Published: JUN 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, DOI:

High permittivity dielectric materials (epsilon(r) > 20) are used in mobile communications due to low dielectric loss in microwaves and millimeter waves, specific temperature dependence of the dielectric properties and high dielectric permittivity, which allows device miniaturization. Preparation of Ba(Zn1/3Ta2/3)O-3 ceramic materials (BZT) with optimal properties for applications requires special thermal treatments due to the difficult control of the cationic ordering. The samples were prepared by using solid-state reaction, doped with Eu2O3, ZrO2, Nb2O5, or Al2O3-Y2O3 and sintered at the following temperatures: 1400, 1500, 1550 degrees C for 2 or 3 hours. In order to improve the microwave properties, annealing treatments at 1410 degrees C for 10h or 30h were performed on ceramic samples. XRD was used for compositional and structural characterization. The XRD data allowed the study of the transition from the pseudo-cubic cell to the hexagonal cell. The dielectric properties were measured in the microwave range and were correlated with additives and structural properties. Sintering temperatures greater than 1500 degrees C are required for doped BZT compositions, in order to obtain high dielectric constant (epsilon(r) similar to 28) and high quality factor (Q = 10000 at 10 GHz).

54. Microwave properties of Ba1-xPbxNd2Ti5O14 dielectric resonators

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, CA; Stoica, G

Published: MAY 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, DOI:

The Ba1-xPbxNd2Ti5O14 (BNT: Pb) ceramics are appropriate for microwave devices due to their high dielectric constant and low loss in the microwave domain. Samples with x Pb content in the range 0 + 0.5 were prepared by solid-state reaction and sintered at temperatures T-s = 1230 + 1260 degrees C. XRD and SEM analysis indicate very good crystalline structure and polyhedral well formed grains. Controlled temperature coefficient of resonant frequency alpha is essential for dielectric resonators. The temperature coefficient of the resonant frequency alpha takes values from - 15 ppm/degrees C to + 70 ppm/degrees C. Highdensity values and adequate microwave parameters were obtained for x = 0.5 Pb content. The BNT: Pb ceramics sintered at 1250 degrees C and 1260 degrees C for 2 hours are suitable for dielectric resonators for frequencies up to 5 GHz. epsilon r = 76 + 87 and Q x f similar to 5000 GHz).

55. Dielectric and morphological studies of BST ferroelectric ceramics

Authors: Ioachim, A; Vasiliu, F; Toacsan, MI; Nedelcu, L; Banciu, MG; Alexandru, HV; Stoica, G

Published: MAY 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, DOI:

Barium strontium titanate with molar formula Ba0.75Sr0.25 TiO3 (BST) was prepared from raw materials by solid-state reaction. Samples were sintered at 1230 degrees C and 1260 degrees C for 2 h. In order to improve the sintering process, 1 wt. % MgO and 1 wt. % MnO2 were used as sintering additives. The sinterability, structural, morphological and dielectric properties of pure and doped BST samples were investigated. Perovskite structure of polycrystalline BST ceramics was determined by Xray diffraction. SEM investigations revealed a grain and pore size distribution, which is shifted to higher values by a slight increase of the sintering temperature from 1230 degrees C to 1260 degrees C. In the presence of additives, a better sintering and grain refining could be observed, whereas their lack induce a strong effect of exaggerated grain growth, by forming of large faceted grains. The presence of Mn ions in the doped BST ceramics was revealed by the EDX analysis. On the other hand, Mg ions are not evidenced. Temperature dependence of dielectric constant measured at 1 kHz shows a diffuse ferroelectric-paraelectric transition, which can be attributed to the large size dispersion of grains. The increase of sintering temperature leads to a shift of the Curie temperature to higher values.

56. Annealing effects on properties of Ba(Zn1/3Ta2/3)O-3 dielectric materials

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, CA; Andronescu, E; Jinga, S

Published: 2007, 2006 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, DOI:

Ba(Zn1/3Ta2/3)O-3 dielectric materials were prepared by, solid state reaction. The samples were sintered at temperatures in the range 1400 divided by. 1600 degrees C for 4 h. Morphostructural characterization was performed by using SE l and XRD. The dielectric properties were measured in the microwave range (6 divided by 7 GHz). An additional annealing at 1400 degrees C for 10 hours was performed in order to improve the dielectric parameters. The best parameters were achieved for the samples sintered at 1600 degrees C with additional thermal treatment.

57. Characterization of Ba0.5Sr0.5TiO3 thin films for tuneable devices

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, CA; Sava, F; Popescu, M; Scarisoreanu, N; Dinescu, M

Published: 2007, 2006 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, DOI:

Barium strontium titanate (BST) bulk ceramic c was used as target for PLD thin film deposition. In order to avoid stoichiometry modification during the deposition, a more reactive oxidant ambient in the chamber was produced by, using a radiofrequency discharge 13.56 MHz, 150 W. Thin films of stoichiometric BST was deposited on alumina substrate with the thickness between 400 and 500 nm heated at 650 degrees C. An aditional anealing was made at 800 degrees C for 6 hours. XRD and SEM were used,for sample characterization, Capacity measurements tit 100 kHz were performed versus temperature.

58. Dielectric resonators for microwave and millimeter wave applications

Authors: Nedelcu, L; Toacsan, MI; Banciu, MG; Ioachim, A

Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, DOI: 10.1109/SMICND.2007.4519700

Three types of materials for dielectric resonators are presented in this paper. The Pb-BNT materials show the highest dielectric constant (similar to 85). A very small controllable temperature coefficient if in the range (-2 divided by +4) ppm/degrees C can be achieved by using dielectric resonators Mg-(Zr0.8Sn0.2)TiO4. On the other hand, the resonators made of Ba(Zn1/3Ta2/3)O-3 exhibit the highest values for the Qxf product, ranging from 50000 to 130000 GHz, which make them attractive for millimetre wave applications.

59. Effect of the sintering temperature on the Ba(Zn1/3Ta2/3)O-3 dielectric properties

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, CA; Feder, M; Plapcianu, C; Lifei, F; Nita, P

Published: 2007, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 27, DOI: 10.1016/j.jeurceramsoc.2006.05.023

Preparation of dielectric materials with optimal properties for wireless applications requires special thermal treatments due to the difficult control of the cationic ordering. The BZT samples prepared by solid-state reaction were sintered at temperatures in the range 1400-1600 degrees C for 4 h. For compositional, structural and morphological characterization, XRD, SEM and EDX were employed. The order-disorder transition of the BZT material was analyzed. With the increase of the sintering temperature, a long-range order with a 2:1 ratio of Ta and Zn cations on the octahedral positions of the perovskite structure was observed. The dielectric parameters were measured in the microwave range and were correlated with morphological and structural properties. In order to improve the microwave properties, annealing treatment at 1400 degrees C for 10 h was performed. Sintering temperatures greater than 1550 degrees C are required for undoped BZT compositions, in order to obtain low microwave loss (Qf > 100,000). (c) 2006 Elsevier Ltd. All rights reserved.

60. Ferroelectric ceramics based on the BaO-SrO-TiO2 ternary system for microwave applications

Authors: Ioachim, A; Ramer, R; Toacsan, MI; Banciu, MG; Nedelcu, L; Dutu, CA; Vasiliu, F; Alexandru, HV; Berbecaru, C; Stoica, G; Nita, P

Published: 2007, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 27, DOI: 10.1016/j.jeurceramsoc.2006.05.086

Ba1-xSrxTiO3 solid solutions with x = 0.25, 0.5, 0.75 and 0.9 were prepared by solid-state reaction from powder oxides with high purity. In order to improve the granular growth 1 wt.% MgO and 1 wt.% MnO2 was added to the calcined powders. Samples were sintered for 2 h at 1230 and 1260 degrees C. Structural parameters, grain sizes, bulk densities and microwave dielectric parameters were determined. A monotonic decrease of the Curie temperature with the increase of strontium content was determined by low-frequency dielectric measurements. Microwave measurements around 1 GHz showed substantial decrease of the permittivity with the x increase from about 1080 to 200. Also, the variation of losses from 11 % to less than 0.2% was observed. The results indicate the BST ceramic as dielectric material, which can be utilized in paraelectric state for microwave devices. (c) 2006 Elsevier Ltd. All rights reserved.

61. Barium strontium titanate-based perovskite materials for microwave applications

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Vasiliu, F; Alexandru, HV; Berbecaru, C; Stoica, G

Published: 2007, PROGRESS IN SOLID STATE CHEMISTRY, 35, DOI: 10.1016/j.progsolidstchem.2007.01.017

Ba1-xSrxTiO3 solid solutions were prepared by solid-state reaction from raw materials. Four compositions with x = 0.25, 0.50, 0.75 and 0.90 have been investigated. The perovskite type and polycrystalline structure of the BST samples were revealed by X-ray diffraction data. The morphology, grain size distribution, porous structure and elemental composition of the sintered ceramics were analyzed by using scanning electron microscopy (SEM) and energy-dispersive X-ray (EDX) microanalysis. The temperature dependence of permittivity and of dielectric loss tangent at low frequency (1 kHz) showed decrease of Curie temperature with increase of Sr content. Microwave measurements (1 GHz) showed substantial decrease of the dielectric constant from about 1600 to 200 and also of the losses from 12% to less than 2% with the Sr concentration increase from x = 0.25 to x = 0.90. Moreover, the addition of MgO and MnO2 1 wt.% each, improved sintering process and lowered the microwave losses up to 0.2%. (c) 2007 Elsevier Ltd. All rights reserved.

62. Accelerate ageing of PZT-type ceramics

Authors: Toacsan, MI; Ioachim, A; Nedelcu, L; Alexandru, HV

Published: 2007, PROGRESS IN SOLID STATE CHEMISTRY, 35, DOI: 10.1016/j.progsolidstchem.2007.01.018

Accelerate ageing of lead zirconate-titanate ferroceramics (PZT) by fast neutron irradiation is investigated. The ferroelectric behavior of Pb1-wMw(Zr,Ti)O-3, where w < 0.5 wt%, M = Li, Nb, Cr, Bi, Mn, Sb, La for Zr/Ti ratio = 51.5/48.5, prepared by solid state reaction, is strongly affected by fast neutron irradiation at Phi(i) = (10(13) divided by 10(18)) n/cm(2) integrated fluxes. Structural investigations (XRD and SEM) reveal modifications of the microstructure, porosity and elementary cell parameters. High irradiation levels induce tetragonal-cubic at the same time with a ferro-paraelectric transition. The micrographs show the evolution of 90 degrees and 180 degrees walls as well as herringbone structure typical for tetragonal distortions with irradiation level. A relation between macroscopic characteristics (piezoelectric and dielectric) and microscopic properties (crystallographic parameters, porous structure and grain morphology) as function of irradiation doses can be established using a model based on microstructural parameters. These results offer opportunities to understand the fundamentals of radiation effects upon piezoelectric ceramics. (c) 2007 Elsevier Ltd. All rights reserved.

63. Thermal treatments effects on microwave dielectric properties of Ba(Zn1/3Ta2/3)O-3 ceramics

Authors: Ioachim, A; Toacsan, MI; Nedelcu, L; Banciu, MG; Dutu, CA; Andronescu, E; Jinga, S

Published: 2007, ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY, 10, DOI:

Ba(Zn1/3Ta2/3)O-3 dielectric materials were prepared by solid state reaction. The samples were sintered at temperatures in the range 1 400 divided by 1 600 degrees C for 4 h. Morphostructural characterization was performed by using SEM and XRD. The dielectric properties were measured in the microwave range (6 divided by 7 GHz). An additional annealing at 1 400 degrees C for 10 hours was performed in order to improve the dielectric parameters. The best parameters were achieved for the samples sintered at 1 600 degrees C with additional thermal treatment.

64. Dielectric properties of (Ba,Sr)TiO3 thin films for applications in electronics

Authors: Ioachim, A; Toacsan, MI; Nedelcu, L; Banciu, MG; Dutu, CA; Buda, M; Sava, F; Popescu, M; Scarisoreanu, N; Dinescu, M

Published: 2007, ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY, 10, DOI:

Barium strontium titanate (BST) bulk ceramic was used as target for PLD thin film deposition. In order to avoid stoichiometry modification during the deposition, a more reactive oxidant ambient in the chamber was produced by rising a radiofrequency discharge 13.56 MHz, 150 W. Thin films of stoichiometric BST was deposited on alumina substrate with the thickness between 400 and 500 nm heated at 650 degrees C. An aditional anealing was made at 800 degrees C for 6 hours. XRD and SEM were used for sample characterization. Capacity measurements at 100 kHz were performed versus temperature.

65. High-k Mg-doped ZST for microwave applications

Authors: Ioachim, A; Banciu, MG; Toacsen, MI; Nedelcu, L; Ghetu, D; Alexandru, HV; Berbecaru, C; Dutu, A; Stoica, G

Published: OCT 31 2006, APPLIED SURFACE SCIENCE, 253, DOI: 10.1016/j.apsusc.2006.06.006

The (Zr0.8Sn0.2)TiO4 material (ZST), has been prepared by solid state reaction and characterized. The samples were sintered in the temperature range of 1260-1320 degrees C for 2 h. The effects of sintering parameters like sintering temperature (T-s) and MgO addition (0.2 wt.%) on structural and dielectric properties were investigated. Bulk density increases from 4900 to 5050 kg/m(3) with the increase of sintering temperature. The effect of MgO addition is to lower the sintering temperature in order to obtain well sintered samples with high value of bulk density. The material exhibits a dielectric constant epsilon(r) similar to 37 and high values of the Q x f product, greater than 45,000, at microwave frequencies. The dielectric properties make the ZST material very attractive for microwave applications such as dielectric resonators, filters, dielectric antennas, substrates for hybrid microwave integrated circuits, etc. (c) 2006 Elsevier B.V. All rights reserved.

66. BST solid solutions, temperature evolution of the ferroelectric transitions

Authors: Alexandru, HV; Berbecaru, C; Ioachim, A; Nedelcu, L; Dutu, A

Published: OCT 31 2006, APPLIED SURFACE SCIENCE, 253, DOI: 10.1016/j.apsusc.2006.06.011

Solid solutions Ba-1 (-) xSrxTiO3 (BST) are of high technological importance, particularly in microwave domain. Barium titanate has "naturally" three transitions, between four stable ferroelectric phases: (C) cubic, (T) tetragonal, (0) orthorhombic, (R) rhombohedral. Jaffe et al. [B. Jaffe, W.R. Cook, H. Jaffe, Piezoelectric Ceramics, Academic Press, 1971] has given the dependence of the transition temperatures up to 30% of Sr content. We have extrapolated these temperatures and we have found that some phases might disappear at higher Sr concentrations. A family of solid solutions with x = 25, 50, 75, 90% was prepared by standard solid-state reaction and sintered at 1230 and 1260 degrees C, respectively. The permitivities and the dielectric losses were measured with a self-acting bridge (1 kHz), on a large temperature range (+/- 200 degrees C). The composition x = 25% shows three peak values of permittivity as expected, while the composition x = 50%, only two peak values, corresponding to phase transitions cubic-tetragonal-rhombohedral, phase orthorhombic being excluded. Compositions with x >= 63%, Sr shows only one peak value corresponding to a genuine transition cubic-rhombohedral. The cubic transition to several lower phases shows almost a linear decrease of the Curie point with the increase of Sr fraction. For Sr concentration x >= 80%, the Curie point appears to fall more rapidly than linear. To our best knowledge, there is for the first time, this effect is reported. (c) 2006 Elsevier B.V. All rights reserved.

67. Dopant influence on BST ferroelectric solid solutions family

Authors: Ioachim, A; Alexandru, HV; Berbecaru, C; Antohe, S; Stanculescu, F; Banciu, MG; Toacsen, MI; Nedelcu, L; Ghetu, D; Dutu, A; Stoica, G

Published: JUL 2006, MATERIALS SCIENCE & ENGINEERING C-BIOMIMETIC AND SUPRAMOLECULAR SYSTEMS, 26, DOI: 10.1016/j.msec.2005.09.045

Solid solutions of the Ba1-xSrxTiO3 (BST) type are very attractive for applications in information technology, but also in microwaves for such electrically controlled devices as phase shifters, tunable filters, steerable antennas, varactors, etc. A family of solid solutions with x = 25, 50, 75, 90% was prepared by standard powder technology-solid state reaction and sintered at 1230 degrees C and 1260 degrees C. Dielectric permittivity and loss at low (1 kHz) and high frequency (1 divided by 2 GHz) were measured on a large temperature range - 200 degrees C divided by + 200 degrees C. The influence of Sr content and of I wt.% MgO and I wt.% MnO2 doping on the complex dielectric constant was studied. The dielectric permittivity at high frequencies and room temperature considerably decreases with the increase of Sr content. Similarly, low frequency measurements showed a severe and almost linear decrease of the Curie Point with the increase of Sr fraction. At low Sr content, the measured ceramic densities slowly decrease with Sr fraction and represent about 92% of the X-ray density rho(g/cm(3)) approximate to 5.99-0.99x. At x=90% Sr concentration, very low-density ceramics were obtained with both sintering temperatures. (c) 2005 Elsevier B.V All rights reserved.

68. Band-pass filters with (Zr-0.8, Sn-0.2)TiO4 dielectric resonators

Authors: Ioachim, A; Banciu, MG; Nedelcu, L; Dutu, CA

Published: JUN 2006, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 8, DOI:

Band-pass filters with dielectric resonators of (Zr-0.8, Sn-0.2)TiO4 ceramic materials (ZST) were developed for X-band applications. The ZST materials exhibit a dielectric constant of about 36.8 and low loss in microwave range. A Qxf product higher than 50,000 was achieved for the ZST samples with 0.2 % wt NiO sintering addition. The external coupling was performed using microstrip lines on a substrate of 9.22 dielectric constant and 0.635 mill height. Filters with a minimum insertion loss between 0.46 dB and 1.74 dB, the bandwidth between 40 MHz and 170 MHz and with the central frequency around 10 GHz were manufactured.

69. Ba1-xSrxTiO3 ceramics for tunable microwave devices

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Ghetu, D; Dutu, AC; Vasiliu, F; Alexandru, HV; Berbecaru, C; Stoica, G; Nita, P

Published: 2005, CAS 2005: INTERNATIONAL SEMICONDUCTOR CONFERENCE, 1-2, DOI:

The paper describes the investigations of Ba1-xSrxTiO3 ceramic materials prepared by solid-state reaction techniques. The addition of MgO and MnO2 improves sintering process and decreases the dielectric loss. The materials exhibit a dielectric constant epsilon(r) similar to 1000 and low loss tan delta similar to 10(-3) at microwave frequencies.

70. High-K ZST material for microwave and millimeter wave applications

Authors: Ioachim, A; Ramer, R; Toacsan, MI; Banciu, MG; Nedelcu, L; Ghetu, D; Stoica, G; Annino, G; Cassetari, M; Martinelli, M

Published: 2005, Smart Materials III, 5648, DOI: 10.1117/12.582428

Wireless communications systems require new materials with special properties in specific frequency bands. The investigations on ZST type ceramics, (Zr0.8Sn0.2)TiO4, presented in this paper, recommend this materials for applications in microwaves and millimeter waves. The ZST materials were prepared using a standard solid-state reaction technology. The samples morphology, phase-composition and microstructure investigations were performed by using the scanning electron microscopy (SEM), and energy-disperse X-ray spectrometry (EDX). The crystalline phases were identified by X-ray diffractometry (XRD). The electromagnetic properties were investigated on ZST resonators by using a Computer Aided Measurement (CAM) in microwaves, combining a HP 8757C network analyzer and a HP 8350B sweep oscillator. The dielectric characteristics at millimeter waves were analyzed by investigation of the Whispering Gallery Modes on ZST disks. The low level NiO doping provides ZST materials with temperature coefficient tau(f) in the range (-2 divided by +4) ppm/degrees C and decreases the dielectric loss. Materials with high values of the Q f product up to 50,000 and a dielectric constant about 36 at microwave frequencies were obtained. ZST dielectric resonators and substrates for hybrid integrated circuits with dimensions 1" x 1" and thickness in the range 0.6 divided by 1 mm were manufactured.

71. Microwave dielectric properties of doped Ba0.5Sr0.5TiO3 ceramics correlated with sintering temperature

Authors: Ioachim, A; Banciu, MG; Nedelcu, L

Published: DEC 2005, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7, DOI:

Ba0.5Sr0.5TiO3 ferroelectric ceramics (BST) were prepared by solid-state reaction. The effect of sintering temperature T, on microwave dielectric properties was studied. Also, the influence of 1 wt % MgO and 1 wt % MnO2 doping on the dielectric parameters was investigated. The morphological aspects of samples were studied by scanning electron microscopy (SEM). The microwave measurements at room temperature revealed dielectric constant around 1.000 and loss smaller than 1 % at 1.1 GHz. Also, the dielectric parameters at low frequency were determined. The results indicate that the BST dielectric ceramics are suitable for manufacturing electric field controlled components such as tunable resonators, phase shifters, steerable antennas etc.

72. (Zr, Sn)TiO4 thin films for application in electronics

Authors: Nistor, M; Gherendi, F; Magureanu, M; Mandache, NB; Ioachim, A; Banciu, MG; Nedelcu, L; Popescu, M; Sava, F; Alexandru, HV

Published: JUL 15 2005, APPLIED SURFACE SCIENCE, 247, DOI: 10.1016/j.apsusc.2005.01.124

Thin films of zirconium tin titanate, (Zr0.8Sn0.2)TiO4 (ZST) were deposited using a pulsed electron beam source based on a channel-spark discharge for target ablation. An advanced degree of crystallization was obtained for the films deposited on alumina substrate post-annealed at 1000 degrees C. The crystalline lattice constants of the films are very close to those of the target material, which confirms the same stoichiometry in ZST films and in the bulk. (c) 2005 Elsevier B.V. All rights reserved.

73. Ferroelectric solid solutions (Ba,Sr)TiO3 for microwave applications

Authors: Alexandru, HV; Berbecaru, C; Stanculescu, F; Ioachim, A; Banciu, MG; Toacsen, MI; Nedelcu, L; Ghetu, D; Stoica, G

Published: APR 25 2005, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118, DOI: 10.1016/j.mseb.2004.12.070

There is an increasing demand of high permittivity ferroelectric materials in microwave devices. Particularly, the Ba1-xSrxTiO3 system (BST), presents a major interest for electrically controlled devices, such as tunable filters, steerable antennas, phase shifters, varactors, etc. [F. De Flaviis, N.G. Alexopoulos, O.M. Stafsudd, IEEE Trans. Microw. Theory Tech., MTT-45 (6) (1997) 963-969]. Solid solutions with X=25, 50, 75, 90% were prepared by standard ceramic technology (solid state reaction) and sintered at 1230 and 1260 degrees C. The temperature dependence of permittivity and of losses at low frequency (1 kHz) has shown interesting results [A. loachim, M.I. Toacsen, M.G. Banciu, L. Nedelcu, D. Ghetu, H.V. Alexandru, C. Berbecaru, G. Stoica, Proceedings on the XVII International Conference on Electromagnetic Fields and Materials, Warszawa, May 2004, pp. 78-82]. The unit cell volume depends linearly on the Sr content ohm (angstrom(3)) = 61.1 + 3.6X (estimated from Ref. [D. Roy, S. D. Krupandihi, Appl. Phys. Lett. 62 (1993) 1056-1058]). The measured densities of our samples p (g/cm(3)); approximate to 5.50 - 1.00X, represent about 92% of the X-ray estimated density p (g/cm(3)) approximate to 5.99 - 0.99X. Microwave measurements around 1 GHz show substantial decrease of the permittivity from about 1600 to 200 and also of the losses from 0.8% to less than 0.15% with the Sr concentration increase, X = 50-90%. It is concluded that sintering temperature has to be increased for samples of high Sr concentration. Moreover, the addition of MgO and MnO2, 1 wt.% each, improve sintering conditions and decreases the microwave losses. Experimental data show an approximate linear decrease of the Curie point, versus X strontium concentration, according to the formula: T-C (degrees C) approximate to 120-360X. Room temperature permittivity and dielectric loss have been measured in microwaves range using the Hakki-Coleman method. (c) 2005 Elsevier B.V All rights reserved.

74. Nickel-doped (Zr-0.8, Sn-0.2)TiO4 for microwave and millimeter-wave applications

Authors: Ioachim, A; Banciu, MG; Toacsan, MI; Nedelcu, L; Ghetu, D; Alexandru, HV; Stoica, G; Annino, G; Cassettari, M; Martinelli, M

Published: APR 25 2005, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 118, DOI: 10.1016/j.mseb.2004.12.071

(Zr-0.8, Sn-0.2)TiO4 ternary compounds (ZST) have been prepared by conventional solid-state reaction from raw materials. The effects of such sintering parameters as sintering temperature, sintering time, and NiO addition on structural and dielectric properties were investigated. The material exhibits a dielectric constant epsilon(r), similar to 36.0 and high values of the product Qf of the intrinsic quality factor Q and the frequency f from 32,170 to 50,000 at microwave frequencies. The dielectric loss tan delta values of ZST ceramics are decreased by low-level doping of NiO, while the temperature coefficient of the resonance frequency tau(f) takes values in the range -2 to +4ppm/degrees C. Investigations on whispering gallery modes revealed low dielectric loss in millimetre-wave domain. An intrinsic quality factor of 480 was measured at 115.6GHz. Dielectric resonators and substrates of ZST material were manufactured. The dielectric properties make the ZST material very attractive to microwave and millimeter-wave applications, such as dielectric resonators, filters, planar antennas, hybrid microwave integrated circuits, etc. (c) 2005 Elsevier B.V. All rights reserved.

75. Oxides ferroelectric (Ba, Sr)TiO3 for microwave devices

Authors: Alexandru, HV; Berbecaru, C; Ioachim, A; Toacsen, MI; Banciu, MG; Nedelcu, L; Ghetu, D

Published: JUN 15 2004, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 109, DOI: 10.1016/j.mseb.2003.10.034

Barium-strontium titanate (BST), ternary ceramic compounds with the molar formula (Ba1-xSrx)TiO3, were prepared by solid-state reaction from raw materials. Three compositions with x = 0.25, 0.50 and 0.75, have been checked. Samples with two type of thermal treatment at 1230 and 1260degreesC have been manufactured and analyzed. Perovskite type, polycrystalline structure of the BST ceramics was revealed by the X-ray diffraction data at room temperature. Strontium ion (Sr2+) enters substitutionally on the Ba2+ site. A small decrease in the unit cell volume with the Sr content increase was observed. Dielectric measurements have been performed at low and high frequencies. The temperature dependence of low frequency permittivity shows large interval of ferroelectric transition, which appears to be merely due to dispersion of crystallites dimensions. The increasing concentration of Sr ion leads to a shift of the Curie point below room temperature. Experimental data show a linear decrease of the Curie point T-C (degreesC); approximate to 120-360x, versus x Strontium fraction. Room temperature permittivity and dielectric loss have been measured in microwaves by using the Hakki-Coleman method. BST samples prepared using water as a milling medium exhibit lower porosity and lower dielectric loss in microwaves than samples prepared using acetone as a milling medium. Dielectric loss Of 10(-3) at 1 GHz shows that this ceramic material is quite suitable for high frequency device applications. (C) 2003 Elsevier B.V. All rights reserved.

76. BNT ceramics synthesis and characterization

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Alexandru, H; Berbecaru, C; Ghetu, D; Stoica, G

Published: JUN 15 2004, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 109, DOI: 10.1016/j.mseb.2003.10.116

Investigations on barium neodymium titanate (BNT) prepared by solid state reaction techniques are presented in this paper. The samples were sintered at temperatures, T-s, in a range 1200-1300degreesC. High density values and adequate microwave parameters were obtained by adding 0.5 mol PbO substitutional for BaO. A decrease of the Curie temperature with the increase of the Nd2O3 concentration was confirmed. For the sample with 28 wt.% Nd2O3, 0.5 mol PbO pyroelectric data indicate Curie temperature around 75 K, therefore, at room temperatures, the materials are in paraelectric phase. BNT ceramics with high Nd2O3 concentration (28 wt.%), sintered at 1250degreesC for 2 h appear to be suitable for dielectric resonators for frequencies up to 3 GHz (epsilon(r)=80-90 and Q = 2000). (C) 2003 Elsevier B.V. All rights reserved.

77. New planar compact dual mode filters for mobile communications

Authors: Banciu, MG; Lojewski, G; Ioachim, A; Nedelcu, L; Militaru, N; Shen, A; Ramer, R

Published: 2004, 2004 International Semiconductor Conference, Vols 1and 2, Proceedings, DOI:

A new type of dual mode filter is proposed for mobile communications systems in 900 MHz frequency bandwidth such as GSM or GPRS. The planar filters were developed on a 0.635 mm substrate with a 10.8 dielectric constant. Several methods of modes coupling were investigated. Each dual mode resonator has a square-shape with the edge 20.5 mm and contributes with two poles to the filter response.

78. Dielectric ceramics based on the ZrO2-SnO2-TiO2 ternary system for microwave and milimeter wave applications

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Ghetu, D; Stoica, G; Annino, G; Cassetari, M; Martinelli, M

Published: 2004, 2004 International Semiconductor Conference, Vols 1and 2, Proceedings, DOI:

The paper describes the investigations of (Zr0.8Sn0.2)TiO4 compounds prepared by solid-state reaction techniques. The effect of La2O3, ZnO and NiO addition on microwave dielectric properties was investigated. The samples were sintered at temperatures T-s = 1280 divided by 1400 degrees C The inaterials exhibit a dielectric constant epsilon(r) similar to 36 and high values of the Q f productfroin 30,000 to 55,000 at microwave frequencies. The measured temperature coefficient of the resonance frequency tau(f) takes values in the range (-2 divided by+4) ppm/degrees C.

79. BNT ceramics in paraelectric phase: Dielectric properties

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Plapcianu, C; Alexandru, H; Berbecaru, C; Stoica, G

Published: 2003, 2003 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, DOI: 10.1109/SMICND.2003.1252443

The paper describes the investigations of Nd doped Barium titanate (BNT) ferroelectric ceramic materials prepared by solid state reaction techniques. The decrease of the Curie temperature with the increase of the Nd2O3 concentration from 0 to 28 wt % was observed. High density values of BNT ceramics were obtained by adding 0.5 mol % PbO substitutional for BaO. The samples were sintered at temperatures T-s=1200divided by12600degreesC. At room temperature, the materials are in paraclectric phase, suitable for high frequency applications.

80. Frequency agile BST materials for microwave applications

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Plapcianu, C; Alexandru, H; Berbecaru, C; Ghetu, D; Stoica, G; Ramer, R

Published: 2003, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 5, DOI:

(Ba1-xSrx)TiO3 solid solution (BST), with different molar compositions (x = 0.25, 0.5, 0.75, 0.9) Were prepared by conventional solid-state reaction from raw materials. Structural parameters, crystallite sizes and bulk densities were determined. Perovskite type polycrystalline structure of the BST ceramics was revealed by X-ray diffraction (XRD) data. The dependence of permittivity and losses at low frequency (1 kHz) was analyzed. The microwave investigations at room temperature revealed dielectric constant around 1000 and loss smaller than 1% at 1.1 GHz. The results indicate that some BST dielectric ceramics are suitable in paraelectric phase for microwave devices. The dielectric constant can be adjusted by using a DC-bias field and such materials are appropriate for manufacturing electric field controlled components such as resonators, phase shifters etc.

81. ZST type material for dielectric resonators and substrates for hybrid integrated circuits

Authors: Ioachim, A; Toacsan, MI; Banciu, MG; Nedelcu, L; Stoica, G; Annino, G; Cassettari, M; Martinelli, M; Ramer, R

Published: 2003, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 5, DOI:

(Zr0.8Sn0.2)TiO4 ceramic (ZST) has been prepared and characterized. The effects of sintering parameters such as sintering temperature, sintering time and NiO addition on structural and dielectric properties were investigated. The material has a dielectric constant epsilon(r) similar to 36.0 and high values of the Q . f product from 32,170 to 50,000 at microwave frequencies. The tan delta values are decreased by low level doping, of NiO, while the temperature coefficient of the resonance frequency tau(f) takes values in the range (-2divided by+4) ppm/degreesC. Investigations on whispering gallery modes revealed low dielectric losses in millimeter wave domain. An intrinsic quality factor of 480 was measured at 136.3 GHz. Dielectric resonators and substrates of ZST material were manufactured. The dielectric properties make the ZST material very attractive to microwave and millimeter wave applications such as filters, hybrid microwave integrated circuits, etc.

Dr. Nedelcu Liviu

Scientific Researcher

Education

Positions

Research interests

Expertize

Patents

Projects

1. Multifunctional dielectric materials produced by spark plasma sintering for passive microwave devices

2. Intrinsic properties in microwave dielectric materials investigated by terahertz time-domain spectroscopy

3. Compact and integrated agile antennas based on tunable ferroelectric materials

4. Advanced dielectric materials for therahertz space applications and technology

5. Terahertz spectroscopy low loss microwave dielectrics

Publications

1. Intrinsic Dielectric Loss in Zr0.8Sn0.2TiO4 Ceramics Investigated by Terahertz Time Domain Spectroscopy

2. Investigation of Ba0.6Sr0.4TiO3 thick films by means of a novel THz-TDS approach

3. Texture and interface characterization of iridium thin films grown on MgO substrates with different orientations

4. RETRACTION: Synthesis and properties of Ba(Zn1/3Ta2/3)O-3 for microwave and millimeter-wave applications (Retraction of Vol 516, Pg 1558, 2007)

5. Performant Composite Materials Based on Oxide Semiconductors and Metallic Nanoparticles Generated from Cloves and Mandarin Peel Extracts

6. EXPERIMENTAL STUDY OF TERAHERTZ RESPONSE FROM SOME FERROELECTRIC AND DIELECTRIC MATERIALS

7. Frequency selective surfaces with hexagonal elements for millimeter waves applications

8. Growth of SrTiO3 Single Crystals with a Diameter of about 30 mm by the Verneuil Method

9. Wet chemical synthesis of ZnO-CdS composites and their photocatalytic activity

10. Intrinsic losses in dielectrics investigated by terahertz spectroscopy

11. GeSi nanocrystals in SiO2 matrix with extended photoresponse in near infrared

12. Millimeter wave and Terahertz investigations on some dielectric materials

13. Microwave antenna array using new dielectric resonator antenna elements

14. BST thin film capacitors integrated within a frequency tunable antenna

15. Electrical transport properties and modelling of electrostrictive resonance phenomena in Ba2/3Sr1/3TiO3 thin films

16. Growth of highly textured iridium thin films and their stability at high temperature in oxygen atmosphere

17. Ultra-High Tunability of Ba(2/3)Sr(1/3) TiO3-Based Capacitors Under Low Electric Fields

18. Microwave dielectric properties of BNT-BT0.08 thin films prepared by sol-gel technique

19. New antennas with dielectric resonators of axial symmetry

20. Submillimeter-wave properties of Zn2SiO4 ceramics

21. Electro-Optic Sampling of Terahertz Pulses Using BaTiO3 in Non-Collinear Cherenkov Phase-Matching Scheme

22. High-Order Modes in High Permittivity Cylindrical Dielectric Resonator Antenna Excited by a Wide Microstrip Line

23. Higher-Order Modes in High-Permittivity Cylindrical Dielectric Resonator Antenna Excited by an Off-Centered Rectangular Slot

24. Compact antenna using ZST low-loss high dielectric constant material

25. Structural and dielectric properties of Ba(X1/3Ta2/3)O-3 thin films grown by RF-PLD

26. Synthesis and properties of Ba(Zn1/3Ta2/3) O-3 for microwave and millimeter-wave applications (vol 516, pg 1558 , 2008)

27. Ba(Zn1/3Ta2/3)O-3 perovskite ceramics doped with Nb5+, Ce4+ or Yb3+

28. Ba(X1/3Ta2/3)O-3 COMPLEX PEROVSKITES FOR MICROWAVE AND MILLIMETER-WAVE APPLICATIONS

29. Cylindrical resonator antenna manufactured with Barium Neodymium Titanate

30. Superior Modes in High Permittivity Cylindrical Dielectric Resonator Antenna Excited by a Central Rectangular Slot

31. Dielectric properties of Ba(Zn1/3Ta2/3)O-3 thin films on Pt-coated Si substrates

32. Microwave antennas based on Ba1-xPbxNd2Ti5O14

33. Synthesis and dielectric characterization of Ba0.6Sr0.4TiO3 ferroelectric ceramics

34. Microwave properties of Ba(Zn1/3Ta2/3)O-3 dielectric resonators

35. BNT ADVANCED CERAMICS FOR SLOT COUPLED DIELECTRIC RESONATOR ANTENNAS

36. Barium magnesium tantalate thin films deposited by RF-magnetron sputtering from a stoichiometric target

37. Optical and structural studies on Ba(Mg1/3Ta2/3)O-3 thin films obtained by radiofrequency assisted pulsed plasma deposition

38. Dielectric resonator antennas of ZST advanced cerramics

39. Synthesis and characterization of doped Ba(Mg1/3Ta2/3)O-3 ceramics

40. Dielectric Properties of Paraelectric Ba1-xSrxTiO3 Ceramics

41. Ba(Zn1/3Ta2/3)O-3 Ceramics for Microwave and Millimeter-wave Applications

42. PLD and RF-PLD synthesis of Ba0.6Sr0.4TiO3 ferroelectric thin films for electrically controlled devices

43. InN thin films deposited on flexible substrates by reactive RF-magnetron sputtering

44. Ceramic materials Ba(1-x)SrxTiO3 for electronics - Synthesis and characterization

45. Synthesis and properties of Ba(Zn1/3Ta2/3)O-3 for microwave and millimeter wave applications

46. Correlation of Structural and MW-MMW Dielectric Properties with Vibrational Modes in BaX1/3Ta2/3O3 Complex Perovskites

47. Radiation characteristics of a novel compact microstrip patch resonator

48. The effects of thermal treatments on microwave dielectric properties of Ba(Zn1/3Ta2/3.)O-3 ceramics

49. High-Q BZT ceramics for microwave applications

50. BST thin films obtained by PLD for applications in electronics

51. Transitions of barium strontium titanate ferroelectric ceramics for different strontium content

52. Magnesium doped (Zr-0.8, Sn-0.2)TiO4 ceramics for microwave devices

53. Dielectric properties of BZT ceramics for microwave applications

54. Microwave properties of Ba1-xPbxNd2Ti5O14 dielectric resonators

55. Dielectric and morphological studies of BST ferroelectric ceramics

56. Annealing effects on properties of Ba(Zn1/3Ta2/3)O-3 dielectric materials

57. Characterization of Ba0.5Sr0.5TiO3 thin films for tuneable devices

58. Dielectric resonators for microwave and millimeter wave applications

59. Effect of the sintering temperature on the Ba(Zn1/3Ta2/3)O-3 dielectric properties

60. Ferroelectric ceramics based on the BaO-SrO-TiO2 ternary system for microwave applications

61. Barium strontium titanate-based perovskite materials for microwave applications

62. Accelerate ageing of PZT-type ceramics

63. Thermal treatments effects on microwave dielectric properties of Ba(Zn1/3Ta2/3)O-3 ceramics

64. Dielectric properties of (Ba,Sr)TiO3 thin films for applications in electronics

65. High-k Mg-doped ZST for microwave applications

66. BST solid solutions, temperature evolution of the ferroelectric transitions