Resume
Dr. Ioana PINTILIE, Scientific researcher rank I (since 2005), born in 1965, graduated the Faculty of Physics – Section Condensed Matter Physics at University of Bucharest (UB) (1989), has a PhD degree obtained at University of Bucharest, Faculty of Physics, (1996). Work experience: National Institute of Materials Physics (NIMP) (1986 – to date); work stages at Hamburg University, Institute for Experimental Physics (IEP) – Germany; Institute of Crystal Growth, IKZ, Berlin, Germany; Oslo University, Center for Materials Science and Nanotechnology, Norway.
Main areas of interest/expertise: development of large area perovskite solar cells, electrically active defects in materials and structures, investigation and modelling the radiation damage in Si-based devices for LHC at CERN and for XFEL in Hamburg, conduction mechanisms in dielectrics, ferroelectric and high-k oxides.
Publications: 213 articles published in Web of Science® (WoS) journals with impact factor (e.g., Phys. Rev. B, J. Appl. Phys., Appl. Phys. Lett., ACS Appl. Mater. Interfaces; ACS Appl. Energ. Mater., J. Mater. Chem. C, Sci. Rep., etc.), Hirsch index (WoS): 29; more than 3000 citations.
Awards: Romanian Academy Award for Physics (2000); Award for Excellence in Research and Innovation – from the Romanian Ministry of Research (2000); Gold Medal at European Exhibition of Creativity and Innovation EUROINVENT Iasi, Romania (2016); Excellence Award at International Exhibition of Research, Innovation and Inventions PRO INVENT, Cluj-Napoca, Romania (2016).
Patents: 4 OSIM awarded patents (RO110740-B1; RO112391-B, RO132082-B1, RO132815-B1). Homologations of industry implemented products (1986-1989) − 6 type of products: pyroelectric material wafers from PZT with different compositions; pyroelectric detectors from PZT; linear arrays of pyroelectric detectors; device for determination of lasers energy profile; electro-thermal-dermal matrices; pyrometers.
Coordinated projects: Participation in numerous international projects, as Coordinator or NIMP team leader as follows: (1) 2000-2005, Coordination of the SiC-group in the CERN-RD50 collaboration (2) 2002-2004, NIMP team leader in the FP5 Project INVEST-EAST “Integration of very high-k dielectrics with silicon CMOS technology” (IST-2001-39094), (3) 2008-2012, NIMP team leader in FP7 - Marie Curie Training Network on Particle Detectors, Grant no.: 214560-2. 4) 2002 - present, NIMP team leader in in CERN-RD50 Collaboration. 6) 2014 – present, Convener of the CERN-RD50 "Defect and Material Characterization" research line (http://rd50.web.cern.ch /rd50/); 7) 2014-2017, Coordinator of 8SEE/30.06.2014 project (program EEA-JRP-RO-NO-2013-1): Perovskites for Photovoltaic Efficient Conversion Technology 8) 2018-2022, NIMP team leader in the project 3εFERRO - Energy Efficient Embedded Non-volatile Memory & Logic based on Ferroelectric Hf(Zr)O2 (Horizon 2020 - grant No 780302); 9) 2021-2023, Coordinator of 36SEE/01.01.2021 project. Coordinator or NIMP team leader in national projects (e.g. http://www.infim.ro/projects/comprehensive-investigation-bulk-radiation-damage-defect-engineered-siliconpoint-defects;).
Professional profile web-links: Brainmap: https://www.brainmap.ro/ioana-pintilie; ORCID ID: 0000-0002-3857-8524; WoS ResearcherID: C-4545-2011.
Projects
1. Acceptor removal process in irradiated p-type Silicon sensors – defect investigations and parametrization /ARP
Project Type: CERN, Start Date: 2022-01-01 End Date: 2024-09-30
2. Towards perovskite large area photovoltaics
Project Type: EEA, Start Date: 2021-01-01 End Date: 2023-12-31
3. Defect engineered p-type silicon sensors for LHC upgrade /DEPSIS
Project Type: CERN-RO, Start Date: 2020-01-01 End Date: 2021-12-31
4. Perovskites for Photovoltaic Efficient Conversion Technology
Project Type: EEA, Start Date: 2014-07-01 End Date: 2017-04-01
5. Comprehensive Investigation on Bulk Radiation Damage in Defect Engineered Silicon – from Point Defects to Clusters.
Project Type: IDEAS, Start Date: 2011-05-01 End Date: 2015-05-01
Publications
1. Investigation of high resistivity p-type FZ silicon diodes after 60Co y-irradiation
Published: APR 2024, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1061, 169103, DOI: 10.1016/j.nima.2024.169103
2. Downscaling grain size toward the nanometre range - A key-factor for tuning the crystalline structure, phase transitions, dielectric and ferroelectric behaviour in Ba 0.8 Sr 0.2 TiO 3 ceramics
Published: JUN 2024, PROGRESS IN SOLID STATE CHEMISTRY, 74, 100457, DOI: 10.1016/j.progsolidstchem.2024.100457
3. Grain size-driven effect on the functional properties in Ba0.6Sr0.4TiO3 ceramics consolidated by spark plasma sintering
Published: JUL 2023, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 43, DOI: 10.1016/j.jeurceramsoc.2023.02.013
4. Effect of Pressure on the Dynamics of Iodide Defects in Methylammonium Lead Iodide: An Atomistic Simulation
Published: 2023 APR 21 2023, JOURNAL OF PHYSICAL CHEMISTRY C, DOI: 10.1021/acs.jpcc.3c00657
5. Resistive-like Behavior of Ferroelectric p-n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O-3 Thin Films
Published: 2023 JAN 25 2023, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.2c01497
6. Partial replacement of Pb2+ in MAPbI(2.6)Cl(0.4) perovskite films and their photovoltaic performance
Published: APR 2023, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 34, 903, DOI: 10.1007/s10854-023-10318-9
7. Partial Replacement of Dimethylformamide with Less Toxic Solvents in the Fabrication Process of Mixed-Halide Perovskite Films
Published: FEB 2023, COATINGS, 13, 378, DOI: 10.3390/coatings13020378
8. Resistive-like Behavior of Ferroelectric p-n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O3 Thin Films
Published: 2023 JAN 25 2023, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.2c01497
9. Grain size-driven effect on the functional properties in Ba0.6Sr0.4TiO3 ceramics consolidated by spark plasma sintering
Published: JUL 2023, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 43, DOI: 10.1016/j.jeurceramsoc.2023.02.013
10. Partial replacement of Pb2+ in MAPbI2.6Cl0.4 perovskite films and their photovoltaic performance
Published: APR 2023, JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 34, 903, DOI: 10.1007/s10854-023-10318-9
11. Defect characterization studies on irradiated boron-doped silicon pad diodes and Low Gain Avalanche Detectors
Published: MAR 2023, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1048, 167977, DOI: 10.1016/j.nima.2022.167977
12. Resistive-like Behavior of Ferroelectric p-n Bilayer Structures Based on Epitaxial Pb(Zr0.2Ti0.8)O-3 Thin Films
Published: JAN 2023, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.2c01497
13. Bistable Boron-Related Defect Associated with the Acceptor Removal Process in Irradiated p-Type Silicon-Electronic Properties of Configurational Transformations
Published: JUN 2023, SENSORS, 23, 5725, DOI: 10.3390/s23125725
14. Deciphering the role of water and a zinc-doping process in a polyol-based approach for obtaining Zn/Co/Al-based spinels: toward "green" mesoporous inorganic pigments
Published: AUG 1 2023, DALTON TRANSACTIONS, 52, DOI: 10.1039/d3dt00972f
15. Investigation of the Boron removal effect induced by 5.5 MeV electrons on highly doped EPI- and Cz-silicon
Published: NOV 2023, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1056, 168559, DOI: 10.1016/j.nima.2023.168559
16. BaTiO3 nanocubes-Gelatin composites for piezoelectric harvesting: Modeling and experimental study
Published: SEP 15 2022, CERAMICS INTERNATIONAL, 48, DOI: 10.1016/j.ceramint.2022.05.264
17. The Boron-Oxygen (BiOi) Defect Complex Induced by Irradiation With 23 GeV Protons in p-Type Epitaxial Silicon Diodes
Published: MAR 2022, IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 69, DOI: 10.1109/TNS.2022.3148030
18. Negative Capacitance and Switching Dynamics Control Via Non-Ferroelectric Elements
Published: MAR 15 2022, ACS APPLIED ENERGY MATERIALS, 5, DOI: 10.1021/acsaem.1c03890
19. Controlling polarization direction in epitaxial Pb(Zr0.2Ti0.8)O-3 films through Nb (n-type) and Fe (p-type) doping
Published: JAN 14 2022, SCIENTIFIC REPORTS, 12, 755, DOI: 10.1038/s41598-022-04802-1
20. Effect of chlorine and bromine on the perovskite crystal growth in mesoscopic heterojunction photovoltaic device
Published: JUN 1 2022, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 143, 106558, DOI: 10.1016/j.mssp.2022.106558
21. Radiation-induced point- and cluster-related defects in epitaxial p-type silicon diodes
Published: 2022, 2019 19TH EUROPEAN CONFERENCE ON RADIATION AND ITS EFFECTS ON COMPONENTS AND SYSTEMS (RADECS), DOI: 10.1109/RADECS47380.2019.9745686
22. Structural, functional properties and enhanced thermal stability of bulk graded (Ba,Sr) TiO3 structures obtained by spark plasma sintering (vol 12, pg 2085, 2021)
Published: JUL-AUG 2021, JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 13, 1323, DOI: 10.1016/j.jmrt.2021.06.001
23. Accidental Impurities in Epitaxial Pb(Zr0.2Ti0.8)O-3 Thin Films Grown by Pulsed Laser Deposition and Their Impact on the Macroscopic Electric Properties
Published: MAY 2021, NANOMATERIALS, 11, DOI: 10.3390/nano11051177
24. Structural, functional properties and enhanced thermal stability of bulk graded (Ba,Sr)TiO3 structures obtained by spark plasma sintering
Published: MAY-JUN 2021, JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 12, 2103, DOI: 10.1016/j.jmrt.2021.04.011
25. Effect of strain and stoichiometry on the ferroelectric and pyroelectric properties of the epitaxial Pb(Zr0.2Ti0.8)O-3 films deposited on Si wafers
Published: APR 2021, MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 266, DOI: 10.1016/j.mseb.2021.115042
26. Investigation of Opto-Electronic Properties and Stability of Mixed-Cation Mixed-Halide Perovskite Materials with Machine-Learning Implementation
Published: SEP 2021, ENERGIES, 14, DOI: 10.3390/en14175431
27. Enhancing stability of hybrid perovskite solar cells by imidazolium incorporation
Published: AUG 1 2021, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 227, DOI: 10.1016/j.solmat.2021.111096
28. Structural Details of BaTiO3 Nano-Powders Deduced from the Anisotropic XRD Peak Broadening
Published: MAY 2021, NANOMATERIALS, 11, DOI: 10.3390/nano11051121
29. Negative capacitance in epitaxial ferroelectric capacitors evidenced by dynamic dielectric characterization
Published: MAR 2021, MATERIALS TODAY COMMUNICATIONS, 26, DOI: 10.1016/j.mtcomm.2021.102076
30. The Role of Interface Defect States in n- and p-Type Ge Metal-Ferroelectric-Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric
Published: FEB 2021, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 218, DOI: 10.1002/pssa.202000500
31. Bistability of the BiOi complex and its implications on evaluating the "acceptor removal"process in p-type silicon
Published: NOV 21 2021, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 1017, DOI: 10.1016/j.nima.2021.165809
32. Homogeneous versus Inhomogeneous Polarization Switching in PZT Thin Films: Impact of the Structural Quality and Correlation to the Negative Capacitance Effect
Published: AUG 2021, NANOMATERIALS, 11, DOI: 10.3390/nano11082124
33. Tetragonal-Cubic Phase Transition and Low-Field Dielectric Properties of CH3NH3PbI3 Crystals
Published: AUG 2021, MATERIALS, 14, DOI: 10.3390/ma14154215
34. Polarization Switching and Negative Capacitance in Epitaxial PbZr0.2Ti0.8O3 Thin Films
Published: JUL 27 2020, PHYSICAL REVIEW APPLIED, 14, DOI: 10.1103/PhysRevApplied.14.014080
35. Influence of doping the inorganic cation with Eu or Sb on the properties of perovskite films
Published: JUL 2020, PHYSICA SCRIPTA, 95, DOI: 10.1088/1402-4896/ab90be
36. Reticulated Mesoporous TiO2 Scaffold, Fabricated by Spray Coating, for Large-Area Perovskite Solar Cells
Published: JAN 2020, ENERGY TECHNOLOGY, 8, DOI: 10.1002/ente.201900922
37. Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
Published: APR 1 2020, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 958, DOI: 10.1016/j.nima.2019.05.062
38. (Ba,Sr)TiO3 solid solutions sintered from sol-gel derived powders: An insight into the composition and temperature dependent dielectric behavior
Published: MAR 2020, CERAMICS INTERNATIONAL, 46, 4190, DOI: 10.1016/j.ceramint.2019.10.136
39. Formation of a Bistable Interstitial Complex in Irradiated p-Type Silicon
Published: SEP 2019, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216, DOI: 10.1002/pssa.201900354
40. Carbon-based sprayed electrodes for pyroelectric applications
Published: AUG 15 2019, PLOS ONE, 14, DOI: 10.1371/journal.pone.0221108
41. Modelling J?V hysteresis in perovskite solar cells induced by voltage poling
Published: DEC 2019, PHYSICA SCRIPTA, 94, DOI: 10.1088/1402-4896/ab347d
42. Memcomputing and Nondestructive Reading in Functional Ferroelectric Heterostructures
Published: AUG 26 2019, PHYSICAL REVIEW APPLIED, 12, DOI: 10.1103/PhysRevApplied.12.024053
43. The hysteresis-free behavior of perovskite solar cells from the perspective of the measurement conditions
Published: MAY 14 2019, JOURNAL OF MATERIALS CHEMISTRY C, 7, 5274, DOI: 10.1039/c8tc05999c
44. Influence of Sintering Strategy on the Characteristics of Sol-Gel Ba1-xCexTi1-x/4O3 Ceramics
Published: DEC 2019, NANOMATERIALS, 9, DOI: 10.3390/nano9121675
45. Low value for the static background dielectric constant in epitaxial PZT thin films
Published: OCT 11 2019, SCIENTIFIC REPORTS, 9, DOI: 10.1038/s41598-019-51312-8
46. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
Published: APR 28 2018, JOURNAL OF APPLIED PHYSICS, 123, DOI: 10.1063/1.5010965
47. The Influence of the Relaxation Time on the Dynamic Hysteresis in Perovskite Solar Cells
Published: 2018, MATHEMATICAL MODELING AND COMPUTATIONAL PHYSICS 2017 (MMCP 2017), 173, DOI: 10.1051/epjconf/201817303017
48. How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: Theory and experiment
Published: OCT 2018, SOLAR ENERGY, 173, 983, DOI: 10.1016/j.solener.2018.08.033
49. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons
Published: APR 28 2018, JOURNAL OF APPLIED PHYSICS, 123, DOI: 10.1063/1.5011372
50. Enhanced near-infrared response of a silicon solar cell by using an up-conversion phosphor film of Yb/Er - co-doped CeO2
Published: SEP 1 2018, SOLAR ENERGY, 171, 46, DOI: 10.1016/j.solener.2018.06.057
51. Study of point-and cluster-defects in radiation-damaged silicon
Published: AUG 1 2018, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 898, 23, DOI: 10.1016/j.nima.2018.04.051
52. Intrinsic and extrinsic effects near orthorhombic-tetragonal phase transition in barium titanate ceramics doped with small amounts of zirconium
Published: APR 15 2017, CERAMICS INTERNATIONAL, 43, 4925, DOI: 10.1016/j.ceramint.2016.12.143
53. Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories
Published: DEC 28 2017, NANOSCALE, 9, 19278, DOI: 10.1039/c7nr06354g
54. Normal and Inverted Hysteresis in Perovskite Solar Cells
Published: JUN 1 2017, JOURNAL OF PHYSICAL CHEMISTRY C, 121, 11214, DOI: 10.1021/acs.jpcc.7b04248
55. Electrical properties of NiFe2O4 epitaxial ultra-thin films
Published: JAN 2017, JOURNAL OF MATERIALS SCIENCE, 52, 803, DOI: 10.1007/s10853-016-0376-8
56. Dynamic electrical behavior of halide perovskite based solar cells
Published: JAN 2017, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 159, 203, DOI: 10.1016/j.solmat.2016.09.012
57. Properties of perovskite ferroelectrics deposited on F doped SnO2 electrodes and the prospect of their integration into perovskite solar cells
Published: DEC 5 2017, MATERIALS & DESIGN, 135, 121, DOI: 10.1016/j.matdes.2017.09.013
58. Atomistic Simulations of Methylammonium Lead Halide Layers on PbTiO3 (001) Surfaces
Published: MAY 4 2017, JOURNAL OF PHYSICAL CHEMISTRY C, 121, 9109, DOI: 10.1021/acs.jpcc.7b00399
59. Relation between domain structure and pyroelectric response in as-grown epitaxial Pb(Zr0.2Ti0.8)O-3 thin films on substrates with different resistivity
Published: SEP 2017, MATERIALS RESEARCH BULLETIN, 93, 207, DOI: 10.1016/j.materresbull.2017.04.054
60. Steplike Switching in Symmetric PbZr0.2Ti0.8O3/CoFeO4/PbZr0.2Ti0.8O3 Heterostructures for Multistate Ferroelectric Memory
Published: SEP 28 2017, PHYSICAL REVIEW APPLIED, 8, DOI: 10.1103/PhysRevApplied.8.034035
61. Intrinsic pyroelectric properties of thick, coarse grained Ba1-xSrxTiO3 ceramics
Published: JUN 2016, CERAMICS INTERNATIONAL, 42, 10348, DOI: 10.1016/j.ceramint.2016.03.152
62. Electrical properties of templateless electrodeposited ZnO nanowires
Published: FEB 2016, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 42, 372, DOI: 10.1016/j.mssp.2015.11.007
63. Iodine Migration and Degradation of Perovskite Solar Cells Enhanced by Metallic Electrodes
Published: DEC 15 2016, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 7, 5175, DOI: 10.1021/acs.jpclett.6b02375
64. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor
Published: AUG 30 2016, APPLIED SURFACE SCIENCE, 379, 276, DOI: 10.1016/j.apsusc.2016.04.083
65. Investigation of point and extended defects in electron irradiated silicon-Dependence on the particle energy
Published: APR 28 2015, JOURNAL OF APPLIED PHYSICS, 117, DOI: 10.1063/1.4918924
66. Simulation of the capacitance-voltage characteristic in the case of epitaxial ferroelectric films with Schottky contacts
Published: OCT 1 2015, THIN SOLID FILMS, 592, 206, DOI: 10.1016/j.tsf.2015.08.046
67. Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
Published: JUN 2015, JOURNAL OF MATERIALS SCIENCE, 50, 3894, DOI: 10.1007/s10853-015-8907-2
68. Electric and pyroelectric properties of AIN thin films deposited by reactive magnetron sputtering on Si substrate
Published: OCT 30 2015, APPLIED SURFACE SCIENCE, 353, 1202, DOI: 10.1016/j.apsusc.2015.07.059
69. Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O-3 thin films
Published: OCT 8 2015, SCIENTIFIC REPORTS, 5, DOI: 10.1038/srep14974
70. INDIRECT AMPLIFICATION OF THE PYROELECTRIC SIGNAL IN Pb(Zr,Ti)O-3 THIN FILMS BY THE PHOTO-GENERATION OF CARRIERS IN THE Si SUBSTRATES
Published: APR-JUN 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 347, DOI:
71. Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O-3 films grown on Si substrates with SrTiO3 buffer layer
Published: OCT 30 2015, THIN SOLID FILMS, 593, 130, DOI: 10.1016/j.tsf.2015.09.028
72. Quasi-static electric field-temperature diagrams in epitaxial relaxor ferroelectric films
Published: JAN 2 2015, PHASE TRANSITIONS, 88, 81, DOI: 10.1080/01411594.2014.961151
73. STUDY OF THE LEAKAGE CURRENT IN EPITAXIAL FERROELECTRIC Pb(Zr0.52Ti0.48)O-3 LAYER WITH SrRuO3 BOTTOM ELECTRODE AND DIFFERENT METALS AS TOP CONTACTS
Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 1265, DOI:
74. Polarization-Control of the Potential Barrier at the Electrode Interfaces in Epitaxial Ferroelectric Thin Films
Published: FEB 26 2014, ACS APPLIED MATERIALS & INTERFACES, 6, 2939, DOI: 10.1021/am405508k
75. Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n(+)-p diodes
Published: NOV 2014, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 211, 2562, DOI: 10.1002/pssa.201431315
76. Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n(+)-p structures
Published: 2014, INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, 1583, 126, DOI: 10.1063/1.4865618
77. General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films
Published: JUL 28 2014, JOURNAL OF APPLIED PHYSICS, 116, DOI: 10.1063/1.4891255
78. Electric-field-induced transformations in epitaxial relaxor ferroelectric PbMg1/3Nb2/3O3 films
Published: MAR 24 2014, PHYSICAL REVIEW B, 89, DOI: 10.1103/PhysRevB.89.094106
79. Frustration of ferroelectricity in epitaxial film of relaxor ferroelectric PbSc1/2Nb1/2O3
Published: AUG 13 2014, JOURNAL OF PHYSICS-CONDENSED MATTER, 26, DOI: 10.1088/0953-8984/26/32/325901
80. Formation and Annealing of Metastable (Interstitial Oxygen)-(Interstitial Carbon) Complexes in n- and p-Type Silicon
Published: NOV 2014, SEMICONDUCTORS, 48, 1462, DOI: 10.1134/S1063782614110141
81. Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)
Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 108, DOI: 10.1007/978-3-662-44479-5_4
82. Study of High-dose X-ray Radiation Damage of Silicon Sensors
Published: 2013, DAMAGE TO VUV, EUV, AND X-RAY OPTICS IV; AND EUV AND X-RAY OPTICS: SYNERGY BETWEEN LABORATORY AND SPACE III, 8777, DOI: 10.1117/12.2019514
83. Challenges for silicon pixel sensors at the European XFEL
Published: DEC 1 2013, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 730, 7, DOI: 10.1016/j.nima.2013.05.166
84. Electronic transport in (La,Sr)MnO3-ferroelectric-(La,Sr)MnO3 epitaxial structures
Published: JUN 14 2013, JOURNAL OF APPLIED PHYSICS, 113, DOI: 10.1063/1.4808335
85. Study of high-dose X-ray radiation damage of silicon sensors
Published: DEC 21 2013, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 732, 121, DOI: 10.1016/j.nima.2013.05.131
86. Evidence of tunneling in n-4H-SiC/SiO2 capacitors at low temperatures
Published: 2013, SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, +, DOI: 10.4028/www.scientific.net/MSF.740-742.557
87. Evidence for resonant tunneling from interface states in as-grown n-4H-SiC/SiO2 capacitors
Published: OCT 31 2013, THIN SOLID FILMS, 545, 28, DOI: 10.1016/j.tsf.2013.03.083
88. Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5 MeV and 15 MeV
Published: DEC 1 2013, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 730, 90, DOI: 10.1016/j.nima.2013.04.080
89. PARAMAGNETIC POINT DEFECTS IN PURE AND C-13 AND O-17 IMPLANTED SILICON FOR HIGH ENERGY PARTICLE DETECTORS
90. Structural, electric and magnetic properties of Pb(Zr0.2Ti0.8)O-3-CoFe2O4 heterostructures
Published: OCT 31 2013, THIN SOLID FILMS, 545, 7, DOI: 10.1016/j.tsf.2013.06.033
91. Electrode interface control of the Schottky diode-like behavior in epitaxial Pb(Zr0.2Ti0.8)O-3 thin films: A critical analysis
Published: JUN 7 2013, JOURNAL OF APPLIED PHYSICS, 113, DOI: 10.1063/1.4808464
92. Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL
Published: DEC 2012, JOURNAL OF INSTRUMENTATION, 7, DOI: 10.1088/1748-0221/7/12/C12012
93. Epitaxial ferromagnetic samarium and samarium silicide synthesized on Si(001)
Published: OCT 2012, JOURNAL OF MATERIALS SCIENCE, 47, DOI: 10.1007/s10853-012-6672-z
94. Potential barrier increase due to Gd doping of BiFeO3 layers in Nb:SrTiO3-BiFeO3-Pt structures displaying diode-like behavior
Published: JUN 18 2012, APPLIED PHYSICS LETTERS, 100, DOI: 10.1063/1.4729816
95. Structural, dielectric, and piezoelectric properties of fine-grained NBT-BT0.11 ceramic derived from gel precursor
Published: AUG 2012, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 32, 2397, DOI: 10.1016/j.jeurceramsoc.2012.02.021
96. The impact of the Pb(Zr,Ti)O-3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure
Published: NOV 15 2012, JOURNAL OF APPLIED PHYSICS, 112, DOI: 10.1063/1.4765723
97. Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon
Published: MAY 2012, JOURNAL OF SYNCHROTRON RADIATION, 19, 346, DOI: 10.1107/S0909049512002348
98. The effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O-3 thin films with bottom SrRuO3 electrode
Published: SEP 15 2012, JOURNAL OF APPLIED PHYSICS, 112, DOI: 10.1063/1.4754318
99. Short-term repeatability of a rad-hard EPI diode applied in electron processing dosimetry
Published: 2011, 2011 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), 236, DOI:
100. Silicon detectors for the sLHC
Published: DEC 1 2011, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 658, 16, DOI: 10.1016/j.nima.2011.04.045
101. Study of X-ray radiation damage in silicon sensors
Published: NOV 2011, JOURNAL OF INSTRUMENTATION, 6, DOI: 10.1088/1748-0221/6/11/C11013
102. The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO2 interface
Published: 2011, SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, +, DOI: 10.4028/www.scientific.net/MSF.679-680.326
103. Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states
Published: 2011, SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, +, DOI: 10.4028/www.scientific.net/MSF.679-680.346
104. Interface controlled photovoltaic effect in epitaxial Pb(Zr,Ti)O-3 films with tetragonal structure
Published: AUG 15 2011, JOURNAL OF APPLIED PHYSICS, 110, DOI: 10.1063/1.3624738
105. Annealing study of a bistable cluster defect
Published: JAN 11 2010, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 612, 529, DOI: 10.1016/j.nima.2009.08.021
106. Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt-ZnO-Pb(Zr0.2Ti0.8)O-3-Pt heterostructures
Published: JAN 4 2010, APPLIED PHYSICS LETTERS, 96, DOI: 10.1063/1.3284659
107. Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
Published: JUL 15 2010, JOURNAL OF APPLIED PHYSICS, 108, DOI: 10.1063/1.3457906
108. About the complex relation between short-circuit photocurrent, imprint and polarization in ferroelectric thin films
Published: JUN 1 2010, JOURNAL OF APPLIED PHYSICS, 107, DOI: 10.1063/1.3445877
109. Ferroelectric Schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O-3-Ta structure
Published: AUG 18 2010, PHYSICAL REVIEW B, 82, DOI: 10.1103/PhysRevB.82.085319
110. Study of the Radiation Hardness of Silicon Sensors for the XFEL
Published: 2009, 2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9, +, DOI:
111. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors
Published: NOV 21 2009, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 611, 68, DOI: 10.1016/j.nima.2009.09.065
112. The Influence of the Electrode Type on the Electric-Ferroelectric Properties of Sandwich PbZr0.2Ti0.8O3-BiFeO3-PbZr0.2Ti0.8O3 Structure
Published: 2009, FERROELECTRICS, 391, 66, DOI: 10.1080/00150190903001235
113. Interface States in 4H-and 6H-SiC MOS Capacitors: a Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
Published: 2009, SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 500, DOI: 10.4028/www.scientific.net/MSF.615-617.497
114. The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC
Published: 2009, SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 372, DOI: 10.4028/www.scientific.net/MSF.615-617.369
115. Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
Published: 2009, SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, 536, DOI: 10.4028/www.scientific.net/MSF.615-617.533
116. Radiation induced point- and cluster-related defects with strong impact to damage properties of silicon detectors
Published: 2009, 2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9, +, DOI:
117. Capacitance-voltage characteristics of heterostructures with high leakage currents
Published: MAR 1 2008, JOURNAL OF APPLIED PHYSICS, 103, DOI: 10.1063/1.2844210
118. Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon
Published: FEB 2008, PHYSICAL REVIEW B, 77, DOI: 10.1103/PhysRevB.77.073206
119. Investigation of nanocrystalline Pbs/n-Si heterostructures for optoelectronic applications
Published: FEB 15 2008, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 147, 288, DOI: 10.1016/j.mseb.2007.09.070
120. Investigation of metal-oxide semiconductor field-effect transistor-like Si/SiO2/(nano)crystalline PbS heterostructures
Published: APR 30 2008, THIN SOLID FILMS, 516, 4306, DOI: 10.1016/j.tsf.2007.11.116
121. ELECTRIC, FERROELECTRIC AND PHOTOELECTRIC PROPERTIES OF Pb(Zr,Ti)O-3-Nb:SrTiO3 JUNCTIONS
Published: 2008, CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, +, DOI: 10.1109/SMICND.2008.4703406
122. Cluster related hole traps with enhanced-field-emission - the source for long term annealing in hadron irradiated Si diodes
Published: JAN 14 2008, APPLIED PHYSICS LETTERS, 92, DOI: 10.1063/1.2832646
123. DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors
Published: DEC 11 2007, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 583, 108, DOI: 10.1016/j.nima.2007.08.202
124. Radiation damage studies on MCz and standard and oxygen enriched epitaxial silicon devices
Published: DEC 11 2007, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 583, 63, DOI: 10.1016/j.nima.2007.08.194
125. Localized energy levels generated in Magnetic Czochralski silicon by proton irradiation and their influence on the sign of space charge density
Published: JAN 11 2007, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 570, 329, DOI: 10.1016/j.nima.2006.09.033
126. Epitaxial silicon detectors for particle tracking - Radiation tolerance at extreme hadron fluences
Published: NOV 30 2006, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 568, 71, DOI: 10.1016/j.nima.2006.05.203
127. Radiation tolerance of epitaxial silicon detectors at very large proton fluences
Published: JAN 15 2006, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 556, 458, DOI: 10.1016/j.nima.2005.10.103
128. Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon
Published: MAR 15 2006, JOURNAL OF APPLIED PHYSICS, 99, DOI: 10.1063/1.2180428
129. Shallow energy levels induced by gamma rays in standard and oxygenated floating zone silicon
Published: SEP 2006, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 84, 453, DOI: 10.1007/s00339-006-3640-y
130. Stable radiation-induced donor generation and its influence on the radiation tolerance of silicon diodes
Published: JAN 1 2006, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 556, 208, DOI: 10.1016/j.nima.2005.10.013
131. Effect of hydrogenation on defect reactions in silicon particle detectors
Published: 2005, GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 108-109, 222, DOI: 10.4028/www.scientific.net/SSP.108-109.217
132. Elimination and formation of electrically active defects in hydrogenated silicon particle detectors irradiated with electrons
Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 552, 81, DOI: 10.1016/j.nima.2005.06.010
133. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 552, 19, DOI: 10.1016/j.nima.2005.05.039
134. Radiation-hard semiconductor detectors for SuperLHC
Published: APR 1 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 541, 201, DOI: 10.1016/j.nima.2005.01.056
135. Development of radiation tolerant semiconductor detectors for the Super-LHC
Published: JUL 1 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 546, 107, DOI: 10.1016/j.nima.2005.03.044
136. Radiation-induced donor generation in epitaxial and Cz diodes
Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 552, 60, DOI: 10.1016/j.nima.2005.06.006
137. Characterization of oxygen dimer-enriched silicon detectors
Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 552, 55, DOI: 10.1016/j.nima.2005.06.005
138. Space-charge-limited current involving carrier injection into impurity bands of high-k insulators
Published: MAY 16 2005, APPLIED PHYSICS LETTERS, 86, DOI: 10.1063/1.1935045
139. Anomalous current transients related to defect discharge in irradiated silicon diodes
Published: NOV 2004, PHYSICAL REVIEW B, 70, DOI: 10.1103/PhysRevB.70.195209
140. Electrical properties of metal-oxide-silicon structures with LaAlO3 as gate oxide
Published: JUN 15 2004, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 109, 98, DOI: 10.1016/j.mseb.2003.10.054
141. Influence of deep levels on space charge density at different temperatures in gamma-irradiated silicon
Published: SEP 1 2004, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 530, 145, DOI: 10.1016/j.nima.2004.05.062
142. Toward super radiation tolerant semiconductor detectors for future elementary particle research
Published: MAR 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, 38, DOI:
143. Bulk damage effects in standard and oxygen-enriched silicon detectors induced by Co-60-gamma radiation
Published: NOV 21 2003, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 514, 8, DOI: 10.1016/j.nima.2003.08.077
144. Bi influence on growth and physical properties of chemical deposited PbS films
Published: JUN 23 2003, THIN SOLID FILMS, 434, 170, DOI: 10.1016/S0040-6090(03)00449-8
145. Combined chemical-physical methods for enhancing IR photoconductive properties of PbS thin films
Published: JUN 2003, INFRARED PHYSICS & TECHNOLOGY, 44, 211, DOI: 10.1016/S1350-4495(02)00225-6
146. Radiation hardness of silicon - a challenge for defect engineering
Published: DEC 31 2003, PHYSICA B-CONDENSED MATTER, 340, 709, DOI: 10.1016/j.physb.2003.09.238
147. Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for 'type inversion' (vol 82, pg 2169, 2003)
Published: OCT 13 2003, APPLIED PHYSICS LETTERS, 83, 3216, DOI: 10.1063/1.1619226
148. Field effect assisted thermally stimulated currents in CdS thin films deposited on SiO2/Si substrates
Published: DEC 2003, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 5, 852, DOI:
149. Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion"
Published: MAR 31 2003, APPLIED PHYSICS LETTERS, 82, 2171, DOI: 10.1063/1.1564869
150. Superior radiation tolerance of thin epitaxial silicon detectors
Published: DEC 11 2003, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 515, 670, DOI: 10.1016/j.nima.2003.07.021
151. Deep defect levels in standard and oxygen enriched silicon detectors before and after Co-60-gamma-irradiation
Published: OCT 11 2003, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 512, 116, DOI: 10.1016/S0168-9002(03)01884-9
152. Results on defects induced by Co-60 gamma irradiation in standard and oxygen-enriched silicon
Published: NOV 21 2003, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 514, 24, DOI: 10.1016/j.nima.2003.08.079
153. Second-order generation of point defects in highly irradiated float zone silicon - annealing studies
Published: DEC 31 2003, PHYSICA B-CONDENSED MATTER, 340, 582, DOI: 10.1016/j.physb.2003.09.131
154. Deep levels in as-grown 4H-SiC epitaxial layers and their correlation with CVD parameters
Published: 2002, SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4, 466, DOI:
155. Field effect controlled photoresistors based on chemically deposited PbS films
Published: 2002, PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 692, 446, DOI:
156. Close to midgap trapping level in Co-60 gamma irradiated silicon detectors
Published: JUL 1 2002, APPLIED PHYSICS LETTERS, 81, 167, DOI: 10.1063/1.1490397
157. Thermally stimulated current method applied to highly irradiated silicon diodes
Published: JAN 11 2002, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 476, 657, DOI: 10.1016/S0168-9002(01)01654-0
158. Formation of the Z(1,2) deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
Published: DEC 16 2002, APPLIED PHYSICS LETTERS, 81, 4843, DOI: 10.1063/1.1529314
159. Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide
Published: MAY 1 2002, JOURNAL OF APPLIED PHYSICS, 91, 5786, DOI: 10.1063/1.1468277
160. Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS films
Published: MAR 22 2001, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 80, 26, DOI: 10.1016/S0921-5107(00)00578-X
161. Thermally stimulated current method applied on diodes with high concentration of deep trapping levels
Published: JAN 22 2001, APPLIED PHYSICS LETTERS, 78, 552, DOI: 10.1063/1.1335852
162. Ferroelectrics: new wide-gap materials for UV detection
Published: MAR 22 2001, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 80, 391, DOI: 10.1016/S0921-5107(00)00605-X
163. Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR
Published: DEC 2001, PHYSICA B-CONDENSED MATTER, 308, 733, DOI: 10.1016/S0921-4526(01)00887-0
164. Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration
Published: JUN 1 2001, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 465, 69, DOI: 10.1016/S0168-9002(01)00347-3
165. Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration
Published: JUL 1 2001, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 466, 326, DOI: 10.1016/S0168-9002(01)00560-5
166. Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents
Published: JAN 11 2000, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 439, 309, DOI: 10.1016/S0168-9002(99)00845-1
167. Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
Published: JAN 11 2000, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 439, 227, DOI: 10.1016/S0168-9002(99)00887-6
168. Preparation and ferroelectric properties of graded Pb(TiXZr1-X)O-3 thin films
Published: 2000, 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 448, DOI:
169. Field effect enhanced signal-to-noise ratio in chemically deposited PbS thin films on Si3N4/n-Si substrates
Published: APR 3 2000, APPLIED PHYSICS LETTERS, 76, 1892, DOI: 10.1063/1.126202
170. The influence of cadmium salt anion on the growth mechanism and on the physical properties of CdS thin films
Published: 2000, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2, 601, DOI:
171. Equivalent pyroelectric coefficient of a pyroelectric bimorph structure
Published: DEC 15 2000, JOURNAL OF APPLIED PHYSICS, 88, 7271, DOI: 10.1063/1.1327284
172. Some annealing effects in proton irradiated silicon detectors
Published: 2000, 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, 262, DOI:
173. The influence of Cu doping on opto-electronic properties of chemically deposited CdS
Published: MAR 29 1999, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 58, 243, DOI: 10.1016/S0921-5107(98)00435-8
174. Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents
Published: JUL 1999, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 69, 109, DOI: 10.1007/s003390050980
175. Photoconductive properties of Bi4Ti3O12/Si heterostructures with different thickness of the Bi4Ti3O12 film
Published: 1999, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 19, 1476, DOI: 10.1016/S0955-2219(98)00455-5
176. Theoretical background of the optical charging spectroscopy method used for investigation of trapping levels
Published: SEP 21 1998, APPLIED PHYSICS LETTERS, 73, 1687, DOI: 10.1063/1.122245
177. Investigation of deep impurity levels in high resistivity silicon using optical charging spectroscopy
Published: 1998, DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, 296, DOI:
178. Electrical and optical characterization of PbTiO3/Si heterostructures for applications in optoelectronics
Published: 1998, FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2, 3405, 851, DOI: 10.1117/12.312674
179. Enhancement of the photoconductive properties of PbS films deposited on ferroelectric substrates
Published: FEB 1997, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 44, 296, DOI: 10.1016/S0921-5107(96)01729-1
180. Indirect enhancement of PbS photoconductivity by ferroelectric field effect in a PbS/PbTiO3/Si heterostructure
Published: AUG 25 1997, APPLIED PHYSICS LETTERS, 71, 1106, DOI: 10.1063/1.119740
181. Equivalent circuit analysis of a PbS/ferroelectric heterostructure
Published: FEB 1997, INFRARED PHYSICS & TECHNOLOGY, 38, 58, DOI: 10.1016/S1350-4495(96)00026-6
182. Temperature dependence of the pyroelectric voltage in a 2-2 connectivity pyroelectric bimorph
Published: 1997, FERROELECTRICS, 200, 235, DOI: 10.1080/00150199708008608
183. Thermally stimulated currents in PbTiO3 thin films
Published: 1997, FERROELECTRICS, 201, 223, DOI: 10.1080/00150199708228371
184. Growth and properties of CdS thin films deposited from aqueous solutions, using different cadmium salts
Published: FEB 1997, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 44, 406, DOI: 10.1016/S0921-5107(96)01728-X
185. Interface charge modulation in lead sulphide-ferroelectric ceramic heterostructures
Published: OCT 1996, INFRARED PHYSICS & TECHNOLOGY, 37, 665, DOI: 10.1016/S1350-4495(96)00004-7
186. Photovoltaic effect in PbS/PbTiO3/Si heterostructures
Published: SEP 9 1996, APPLIED PHYSICS LETTERS, 69, 1573, DOI: 10.1063/1.117033
187. Photoelectric properties of PbTiO3/Si heterostructures
Published: 1996, FERROELECTRIC THIN FILMS V, 433, 430, DOI: 10.1557/PROC-433-425
188. INTERFACE TRAPPING STATES IN MISIM STRUCTURES, WITH ZNS-MN
Published: MAY 1 1995, THIN SOLID FILMS, 260, 57, DOI: 10.1016/0040-6090(94)06467-9
189. GROWTH AND CHARACTERIZATION OF PBS DEPOSITED ON FERROELECTRIC CERAMICS
Published: AUG 1 1995, JOURNAL OF APPLIED PHYSICS, 78, 1718, DOI: 10.1063/1.360269
190. TRAPPING LEVELS IN BI12SIO20 CRYSTALS
Published: AUG 15 1994, JOURNAL OF APPLIED PHYSICS, 76, 2219, DOI: 10.1063/1.357637
191. The Role of Interface Defect States in n- and p-Type Ge Metal-Ferroelectric-Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric
Published: , PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000500, DOI: 10.1002/pssa.202000500
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