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Dr. Ioana Pintilie

Senior Researcher I

Laboratory of Multifunctional Materials and Structures

ioana[AT]infim[DOT]ro

Projects

1. Towards perovskite large area photovoltaics
Project Type: EEA, Start Date: 2021-01-01 End Date: 2023-12-31
2. Defect engineered p-type silicon sensors for LHC upgrade /DEPSIS
Project Type: CERN-RO, Start Date: 2020-01-01 End Date: 2021-12-31
3. Perovskites for Photovoltaic Efficient Conversion Technology
Project Type: EEA, Start Date: 2014-07-01 End Date: 2017-04-01
4. Comprehensive Investigation on Bulk Radiation Damage in Defect Engineered Silicon – from Point Defects to Clusters.
Project Type: IDEAS, Start Date: 2011-05-01 End Date: 2015-05-01

Publications

1. Enhancing stability of hybrid perovskite solar cells by imidazolium incorporation
Authors: Tomulescu, AG; Leonat, LN; Neatu, F; Stancu, V; Toma, V; Derbali, S; Neatu, S; Rostas, AM; Besleaga, C; Patru, R; Pintilie, I; Florea, M

Published: AUG 1 2021, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 227, 111096, DOI: 10.1016/j.solmat.2021.111096

2. Structural, functional properties and enhanced thermal stability of bulk graded (Ba,Sr)TiO3 structures obtained by spark plasma sintering
Authors: Botea, M; Pintilie, I; Surdu, VA; Stanciu, CA; Trusca, RD; Vasile, BS; Patru, R; Ianculescu, AC; Pintilie, L

Published: MAY-JUN 2021, JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 12, DOI: 10.1016/j.jmrt.2021.04.011

3. Accidental Impurities in Epitaxial Pb(Zr0.2Ti0.8)O-3 Thin Films Grown by Pulsed Laser Deposition and Their Impact on the Macroscopic Electric Properties
Authors: Boni, GA; Chirila, CF; Stancu, V; Amarande, L; Pasuk, I; Trupina, L; Istrate, CM; Radu, C; Tomulescu, A; Neatu, S; Pintilie, I; Pintilie, L

Published: MAY 2021, NANOMATERIALS, 11, 1177, DOI: 10.3390/nano11051177

4. Structural Details of BaTiO3 Nano-Powders Deduced from the Anisotropic XRD Peak Broadening
Authors: Pasuk, I; Neatu, F; Neatu, S; Florea, M; Istrate, CM; Pintilie, I; Pintilie, L

Published: MAY 2021, NANOMATERIALS, 11, 1121, DOI: 10.3390/nano11051121

5. Effect of strain and stoichiometry on the ferroelectric and pyroelectric properties of the epitaxial Pb(Zr0.2Ti0.8)O-3 films deposited on Si wafers
Authors: Chirila, C; Boni, GA; Filip, LD; Husanu, M; Neatu, S; Istrate, CM; Le Rhun, G; Vilquin, B; Trupina, L; Pasuk, I; Botea, M; Pintilie, I; Pintilie, L

Published: APR 2021, MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 266, 115042, DOI: 10.1016/j.mseb.2021.115042

6. The Role of Interface Defect States in n- and p-Type Ge Metal-Ferroelectric-Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric
Authors: Boni, GA; Istrate, CM; Zacharaki, C; Tsipas, P; Chaitoglou, S; Evangelou, EK; Dimoulas, A; Pintilie, I; Pintilie, L

Published: FEB 2021, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 218, 2000500, DOI: 10.1002/pssa.202000500

7. Tetragonal-Cubic Phase Transition and Low-Field Dielectric Properties of CH3NH3PbI3 Crystals
Authors: Patru, RE; Khassaf, H; Pasuk, I; Botea, M; Trupina, L; Ganea, CP; Pintilie, L; Pintilie, I

Published: AUG 2021, MATERIALS, 14, 4215, DOI: 10.3390/ma14154215

8. Structural, functional properties and enhanced thermal stability of bulk graded (Ba,Sr) TiO3 structures obtained by spark plasma sintering (vol 12, pg 2085, 2021)
Authors: Botea, M; Pintilie, I; Surdu, VA; Stanciu, CA; Trusca, RD; Bogdan S, TV; Patru, R; Udrea, M; Ianculescu, AC; Pintilie, L

Published: JUL-AUG 2021, JOURNAL OF MATERIALS RESEARCH AND TECHNOLOGY-JMR&T, 13, DOI: 10.1016/j.jmrt.2021.06.001

9. Negative capacitance in epitaxial ferroelectric capacitors evidenced by dynamic dielectric characterization
Authors: Boni, GA; Chirila, C; Filip, LD; Pintilie, I; Pintilie, L

Published: MAR 2021, MATERIALS TODAY COMMUNICATIONS, 26, 102076, DOI: 10.1016/j.mtcomm.2021.102076

10. Radiation damage in p-type EPI silicon pad diodes irradiated with protons and neutrons
Authors: Gurimskaya, Y; de Almeida, PD; Garcia, MF; Suau, IM; Moll, M; Fretwurst, E; Makarenko, L; Pintilie, I

Published: APR 1 2020, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 958, 162221, DOI: 10.1016/j.nima.2019.05.062

11. (Ba,Sr)TiO3 solid solutions sintered from sol-gel derived powders: An insight into the composition and temperature dependent dielectric behavior
Authors: Patru, RE; Ganea, CP; Stanciu, CA; Surdu, VA; Trusca, R; Ianculescu, AC; Pintilie, I; Pintilie, L

Published: MAR 2020, CERAMICS INTERNATIONAL, 46, DOI: 10.1016/j.ceramint.2019.10.136

12. Polarization Switching and Negative Capacitance in Epitaxial PbZr0.2Ti0.8O3 Thin Films
Authors: Pintilie, L; Boni, GA; Chirila, C; Hrib, L; Trupina, L; Filip, LD; Pintilie, I

Published: JUL 27 2020, PHYSICAL REVIEW APPLIED, 14, 014080, DOI: 10.1103/PhysRevApplied.14.014080

13. Reticulated Mesoporous TiO2 Scaffold, Fabricated by Spray Coating, for Large-Area Perovskite Solar Cells
Authors: Tomulescu, AG; Stancu, V; Besleaga, C; Enculescu, M; Nemnes, GA; Florea, M; Dumitru, V; Pintilie, L; Pintilie, I; Leonat, L

Published: JAN 2020, ENERGY TECHNOLOGY, 8, 1900922, DOI: 10.1002/ente.201900922

14. Influence of doping the inorganic cation with Eu or Sb on the properties of perovskite films
Authors: Stancu, V; Leonat, LN; Tomulescu, AG; Derbali, S; Pintilie, L; Besleaga, C; Galca, AC; Neatu, F; Neatu, T; Florea, M; Pintilie, I

Published: JUL 2020, PHYSICA SCRIPTA, 95, 075707, DOI: 10.1088/1402-4896/ab90be

15. Influence of Sintering Strategy on the Characteristics of Sol-Gel Ba1-xCexTi1-x/4O3 Ceramics
Authors: Stanciu, CA; Pintilie, I; Surdu, A; Trusca, R; Vasile, BS; Eftimie, M; Ianculescu, AC

Published: DEC 2019, NANOMATERIALS, 9, 1675, DOI: 10.3390/nano9121675

16. Modelling J?V hysteresis in perovskite solar cells induced by voltage poling
Authors: Anghel, DV; Nemnes, GA; Pintilie, I; Manolescu, A

Published: DEC 2019, PHYSICA SCRIPTA, 94, 125809, DOI: 10.1088/1402-4896/ab347d

17. Low value for the static background dielectric constant in epitaxial PZT thin films
Authors: Boni, GA; Chirila, CF; Hrib, L; Negrea, R; Filip, LD; Pintilie, I; Pintilie, L

Published: OCT 11 2019, SCIENTIFIC REPORTS, 9, 14698, DOI: 10.1038/s41598-019-51312-8

18. Memcomputing and Nondestructive Reading in Functional Ferroelectric Heterostructures
Authors: Boni, GA; Filip, LD; Chirila, C; Iuga, A; Pasuk, I; Hrib, L; Trupina, L; Pintilie, I; Pintilie, L

Published: AUG 26 2019, PHYSICAL REVIEW APPLIED, 12, 024053, DOI: 10.1103/PhysRevApplied.12.024053

19. Carbon-based sprayed electrodes for pyroelectric applications
Authors: Chirila, C; Botea, M; Iuga, A; Tomulescu, AG; Balescu, L; Galca, AC; Boni, AG; Leonat, L; Pintilie, I; Pintilie, L

Published: AUG 15 2019, PLOS ONE, 14, e0221108, DOI: 10.1371/journal.pone.0221108

20. Formation of a Bistable Interstitial Complex in Irradiated p-Type Silicon
Authors: Makarenko, LF; Lastovski, SB; Yakushevich, HS; Gaubas, E; Pavlov, J; Kozlovski, VV; Moll, M; Pintilie, I

Published: SEP 2019, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 216, 1900354, DOI: 10.1002/pssa.201900354

21. The hysteresis-free behavior of perovskite solar cells from the perspective of the measurement conditions
Authors: Nemnes, GA; Besleaga, C; Tomulescu, AG; Leonat, LN; Stancu, V; Florea, M; Manolescu, A; Pintilie, I

Published: MAY 14 2019, JOURNAL OF MATERIALS CHEMISTRY C, 7, DOI: 10.1039/c8tc05999c

22. How measurement protocols influence the dynamic J-V characteristics of perovskite solar cells: Theory and experiment
Authors: Nemnes, GA; Besleaga, C; Tomulescu, AG; Palici, A; Pintilie, L; Manolescu, A; Pintilie, I

Published: OCT 2018, SOLAR ENERGY, 173, DOI: 10.1016/j.solener.2018.08.033

23. Enhanced near-infrared response of a silicon solar cell by using an up-conversion phosphor film of Yb/Er - co-doped CeO2
Authors: Grigoroscuta, M; Secu, M; Trupina, L; Enculescu, M; Besleaga, C; Pintilie, I; Badica, P

Published: SEP 1 2018, SOLAR ENERGY, 171, DOI: 10.1016/j.solener.2018.06.057

24. Study of point-and cluster-defects in radiation-damaged silicon
Authors: Donegani, EM; Fretwurst, E; Garutti, E; Klanner, R; Lindstroem, G; Pintilie, I; Radu, R; Schwandt, J

Published: AUG 1 2018, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 898, DOI: 10.1016/j.nima.2018.04.051

25. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
Authors: Makarenko, LF; Lastovskii, SB; Yakushevich, HS; Moll, M; Pintilie, I

Published: APR 28 2018, JOURNAL OF APPLIED PHYSICS, 123, 161576, DOI: 10.1063/1.5010965

26. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons
Authors: Radu, R; Pintilie, I; Makarenko, LF; Fretwurst, E; Lindstroem, G

Published: APR 28 2018, JOURNAL OF APPLIED PHYSICS, 123, 161402, DOI: 10.1063/1.5011372

27. The Influence of the Relaxation Time on the Dynamic Hysteresis in Perovskite Solar Cells
Authors: Palici, A; Nemnes, GA; Besleaga, C; Pintilie, L; Anghel, DV; Pintilie, I; Manolescu, A

Published: 2018, MATHEMATICAL MODELING AND COMPUTATIONAL PHYSICS 2017 (MMCP 2017), 173, 03017, DOI: 10.1051/epjconf/201817303017

28. Normal and Inverted Hysteresis in Perovskite Solar Cells
Authors: Nemnes, GA; Besleaga, C; Stancu, V; Dogaru, DE; Leonat, LN; Pintilie, L; Torfason, K; Ilkov, M; Manolescu, A; Pintilie, I

Published: JUN 1 2017, JOURNAL OF PHYSICAL CHEMISTRY C, 121, DOI: 10.1021/acs.jpcc.7b04248

29. Atomistic Simulations of Methylammonium Lead Halide Layers on PbTiO3 (001) Surfaces
Authors: Plugaru, N; Nemnes, GA; Filip, L; Pintilie, I; Pintilie, L; Butler, KT; Manolescu, A

Published: MAY 4 2017, JOURNAL OF PHYSICAL CHEMISTRY C, 121, DOI: 10.1021/acs.jpcc.7b00399

30. Intrinsic and extrinsic effects near orthorhombic-tetragonal phase transition in barium titanate ceramics doped with small amounts of zirconium
Authors: Amarande, L; Miclea, C; Cioangher, M; Pasuk, I; Iuga, A; Pintilie, I

Published: APR 15 2017, CERAMICS INTERNATIONAL, 43, DOI: 10.1016/j.ceramint.2016.12.143

31. Dynamic electrical behavior of halide perovskite based solar cells
Authors: Nemnes, GA; Besleaga, C; Tomulescu, AG; Pintilie, I; Pintilie, L; Torfason, K; Manolescu, A

Published: JAN 2017, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 159, DOI: 10.1016/j.solmat.2016.09.012

32. Electrical properties of NiFe2O4 epitaxial ultra-thin films
Authors: Boni, GA; Hrib, L; Porter, SB; Atcheson, G; Pintilie, I; Rode, K; Pintilie, L

Published: JAN 2017, JOURNAL OF MATERIALS SCIENCE, 52, DOI: 10.1007/s10853-016-0376-8

33. Multiple polarization states in symmetric ferroelectric heterostructures for multi-bit non-volatile memories
Authors: Boni, GA; Filip, LD; Chirila, C; Pasuk, I; Negrea, R; Pintilie, I; Pintilie, L

Published: DEC 28 2017, NANOSCALE, 9, DOI: 10.1039/c7nr06354g

34. Properties of perovskite ferroelectrics deposited on F doped SnO2 electrodes and the prospect of their integration into perovskite solar cells
Authors: Pintilie, I; Stancu, V; Tomulescu, A; Radu, R; Stan, CB; Trinca, L; Pintilie, L

Published: DEC 5 2017, MATERIALS & DESIGN, 135, DOI: 10.1016/j.matdes.2017.09.013

35. Steplike Switching in Symmetric PbZr0.2Ti0.8O3/CoFeO4/PbZr0.2Ti0.8O3 Heterostructures for Multistate Ferroelectric Memory
Authors: Boni, AG; Chirila, C; Pasuk, I; Negrea, R; Pintilie, I; Pintilie, L

Published: SEP 28 2017, PHYSICAL REVIEW APPLIED, 8, 034035, DOI: 10.1103/PhysRevApplied.8.034035

36. Relation between domain structure and pyroelectric response in as-grown epitaxial Pb(Zr0.2Ti0.8)O-3 thin films on substrates with different resistivity
Authors: Pintilie, I; Trinca, L; Trupina, L; Pasuk, I; Pintilie, L

Published: SEP 2017, MATERIALS RESEARCH BULLETIN, 93, DOI: 10.1016/j.materresbull.2017.04.054

37. Iodine Migration and Degradation of Perovskite Solar Cells Enhanced by Metallic Electrodes
Authors: Besleaga, C; Abramiuc, LE; Stancu, V; Tomulescu, AG; Sima, M; Trinca, L; Plugaru, N; Pintilie, L; Nemnes, GA; Iliescu, M; Svavarsson, HG; Manolescu, A; Pintilie, I

Published: DEC 15 2016, JOURNAL OF PHYSICAL CHEMISTRY LETTERS, 7, DOI: 10.1021/acs.jpclett.6b02375

38. Transparent field-effect transistors based on AlN-gate dielectric and IGZO-channel semiconductor
Authors: Besleaga, C; Stan, GE; Pintilie, I; Barquinha, P; Fortunato, E; Martins, R

Published: AUG 30 2016, APPLIED SURFACE SCIENCE, 379, DOI: 10.1016/j.apsusc.2016.04.083

39. Intrinsic pyroelectric properties of thick, coarse grained Ba1-xSrxTiO3 ceramics
Authors: Ianculescu, A; Pintilie, I; Vasilescu, CA; Botea, M; Iuga, A; Melinescu, A; Dragan, N; Pintilie, L

Published: JUN 2016, CERAMICS INTERNATIONAL, 42, DOI: 10.1016/j.ceramint.2016.03.152

40. Electrical properties of templateless electrodeposited ZnO nanowires
Authors: Matei, E; Costas, A; Florica, C; Enculescu, M; Pintilie, I; Pintilie, L; Enculescu, I

Published: FEB 2016, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 42, DOI: 10.1016/j.mssp.2015.11.007

41. Electric and pyroelectric properties of AIN thin films deposited by reactive magnetron sputtering on Si substrate
Authors: Stan, GE; Botea, M; Boni, GA; Pintilie, I; Pintilie, L

Published: OCT 30 2015, APPLIED SURFACE SCIENCE, 353, DOI: 10.1016/j.apsusc.2015.07.059

42. Electrode interface controlled electrical properties in epitaxial Pb(Zr0.52Ti0.48)O-3 films grown on Si substrates with SrTiO3 buffer layer
Authors: Boni, AG; Chirila, C; Pasuk, I; Negrea, R; Trupina, L; Le Rhun, G; Vilquin, B; Pintilie, I; Pintilie, L

Published: OCT 30 2015, THIN SOLID FILMS, 593, DOI: 10.1016/j.tsf.2015.09.028

43. Polarization induced self-doping in epitaxial Pb(Zr0.20Ti0.80)O-3 thin films
Authors: Pintilie, L; Ghica, C; Teodorescu, CM; Pintilie, I; Chirila, C; Pasuk, I; Trupina, L; Hrib, L; Boni, AG; Apostol, NG; Abramiuc, LE; Negrea, R; Stefan, M; Ghica, D

Published: OCT 8 2015, SCIENTIFIC REPORTS, 5, 14974, DOI: 10.1038/srep14974

44. STUDY OF THE LEAKAGE CURRENT IN EPITAXIAL FERROELECTRIC Pb(Zr0.52Ti0.48)O-3 LAYER WITH SrRuO3 BOTTOM ELECTRODE AND DIFFERENT METALS AS TOP CONTACTS
Authors: Boni, AG; Chirila, C; Hrib, L; Pintilie, I; Pintilie, L

Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, DOI:

45. Simulation of the capacitance-voltage characteristic in the case of epitaxial ferroelectric films with Schottky contacts
Authors: Filip, LD; Pintilie, L; Stancu, V; Pintilie, I

Published: OCT 1 2015, THIN SOLID FILMS, 592, DOI: 10.1016/j.tsf.2015.08.046

46. Comparison between the ferroelectric/electric properties of the PbZr0.52Ti0.48O3 films grown on Si (100) and on STO (100) substrates
Authors: Chirila, C; Boni, AG; Pasuk, I; Negrea, R; Trupina, L; Le Rhun, G; Yin, S; Vilquin, B; Pintilie, I; Pintilie, L

Published: JUN 2015, JOURNAL OF MATERIALS SCIENCE, 50, DOI: 10.1007/s10853-015-8907-2

47. Investigation of point and extended defects in electron irradiated silicon-Dependence on the particle energy
Authors: Radu, R; Pintilie, I; Nistor, LC; Fretwurst, E; Lindstroem, G; Makarenko, LF

Published: APR 28 2015, JOURNAL OF APPLIED PHYSICS, 117, 164503, DOI: 10.1063/1.4918924

48. INDIRECT AMPLIFICATION OF THE PYROELECTRIC SIGNAL IN Pb(Zr,Ti)O-3 THIN FILMS BY THE PHOTO-GENERATION OF CARRIERS IN THE Si SUBSTRATES
Authors: Botea, M; Pintilie, L; Pintilie, I; Stancu, V

Published: APR-JUN 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, DOI:

49. Quasi-static electric field-temperature diagrams in epitaxial relaxor ferroelectric films
Authors: Tyunina, M; Pintilie, I; Levoska, J; Pintilie, L

Published: JAN 2 2015, PHASE TRANSITIONS, 88, DOI: 10.1080/01411594.2014.961151

50. Formation and Annealing of Metastable (Interstitial Oxygen)-(Interstitial Carbon) Complexes in n- and p-Type Silicon
Authors: Makarenko, LF; Korshunov, FP; Lastovskii, SB; Murin, LI; Moll, M; Pintilie, I

Published: NOV 2014, SEMICONDUCTORS, 48, DOI: 10.1134/S1063782614110141

51. Forward current enhanced elimination of the radiation induced boron-oxygen complex in silicon n(+)-p diodes
Authors: Makarenko, LF; Lastovskii, SB; Yakushevich, HS; Moll, M; Pintilie, I

Published: NOV 2014, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 211, DOI: 10.1002/pssa.201431315

52. Frustration of ferroelectricity in epitaxial film of relaxor ferroelectric PbSc1/2Nb1/2O3
Authors: Tyunina, M; Pintilie, I; Iuga, A; Stratulat, MS; Pintilie, L

Published: AUG 13 2014, JOURNAL OF PHYSICS-CONDENSED MATTER, 26, 325901, DOI: 10.1088/0953-8984/26/32/325901

53. General equivalent circuit derived from capacitance and impedance measurements performed on epitaxial ferroelectric thin films
Authors: Pintilie, L; Hrib, L; Pasuk, I; Ghica, C; Iuga, A; Pintilie, I

Published: JUL 28 2014, JOURNAL OF APPLIED PHYSICS, 116, 044108, DOI: 10.1063/1.4891255

54. Electric-field-induced transformations in epitaxial relaxor ferroelectric PbMg1/3Nb2/3O3 films
Authors: Tyunina, M; Pintilie, I; Iuga, A; Pintilie, L

Published: MAR 24 2014, PHYSICAL REVIEW B, 89, 094106, DOI: 10.1103/PhysRevB.89.094106

55. Polarization-Control of the Potential Barrier at the Electrode Interfaces in Epitaxial Ferroelectric Thin Films
Authors: Pintilie, I; Teodorescu, CM; Ghica, C; Chirila, C; Boni, AG; Hrib, L; Pasuk, I; Negrea, R; Apostol, N; Pintilie, L

Published: FEB 26 2014, ACS APPLIED MATERIALS & INTERFACES, 6, DOI: 10.1021/am405508k

56. Oxide Thin Films and Nano-heterostructures for Microelectronics (MOS Structures, Ferroelectric Materials and Multiferroic Heterostructures)
Authors: Pintilie, I; Pintilie, L; Filip, LD; Nistor, LC; Ghica, C

Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, DOI: 10.1007/978-3-662-44479-5_4

57. Formation and annealing of boron-oxygen defects in irradiated silicon and silicon-germanium n(+)-p structures
Authors: Makarenko, LF; Lastovskii, SB; Korshunov, FP; Moll, M; Pintilie, I; Abrosimov, NV

Published: 2014, INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS 2013, 1583, DOI: 10.1063/1.4865618

58. Electronic transport in (La,Sr)MnO3-ferroelectric-(La,Sr)MnO3 epitaxial structures
Authors: Boni, AG; Pintilie, I; Pintilie, L; Preziosi, D; Deniz, H; Alexe, M

Published: JUN 14 2013, JOURNAL OF APPLIED PHYSICS, 113, 224103, DOI: 10.1063/1.4808335

59. Electrode interface control of the Schottky diode-like behavior in epitaxial Pb(Zr0.2Ti0.8)O-3 thin films: A critical analysis
Authors: Hrib, LM; Boni, AG; Chirila, C; Pasuk, I; Pintilie, I; Pintilie, L

Published: JUN 7 2013, JOURNAL OF APPLIED PHYSICS, 113, 214108, DOI: 10.1063/1.4808464

60. Study of High-dose X-ray Radiation Damage of Silicon Sensors
Authors: Schwandt, J; Fretwurst, E; Klanner, R; Pintilie, I; Zhang, JG

Published: 2013, DAMAGE TO VUV, EUV, AND X-RAY OPTICS IV; AND EUV AND X-RAY OPTICS: SYNERGY BETWEEN LABORATORY AND SP, 8777, 87770K, DOI: 10.1117/12.2019514

61. PARAMAGNETIC POINT DEFECTS IN PURE AND C-13 AND O-17 IMPLANTED SILICON FOR HIGH ENERGY PARTICLE DETECTORS
Authors: Nistor, SV; Ghica, D; Pintilie, I; Manaila, E

Published: 2013, ROMANIAN REPORTS IN PHYSICS, 65, DOI:

62. Evidence of tunneling in n-4H-SiC/SiO2 capacitors at low temperatures
Authors: Filip, LD; Pintilie, I; Svensson, BG

Published: 2013, SILICON CARBIDE AND RELATED MATERIALS 2012, 740-742, DOI: 10.4028/www.scientific.net/MSF.740-742.557

63. Study of high-dose X-ray radiation damage of silicon sensors
Authors: Klanner, R; Fretwurst, E; Pintilie, I; Schwandt, J; Zhang, JG

Published: DEC 21 2013, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 732, DOI: 10.1016/j.nima.2013.05.131

64. Radiation damage in n-type silicon diodes after electron irradiation with energies between 1.5 MeV and 15 MeV
Authors: Radu, R; Fretwurst, E; Klanner, R; Lindstroem, G; Pintilie, I

Published: DEC 1 2013, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 730, DOI: 10.1016/j.nima.2013.04.080

65. Challenges for silicon pixel sensors at the European XFEL
Authors: Klanner, R; Becker, J; Fretwurst, E; Pintilie, I; Pohlsen, T; Schwandt, J; Zhang, JG

Published: DEC 1 2013, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 730, DOI: 10.1016/j.nima.2013.05.166

66. Evidence for resonant tunneling from interface states in as-grown n-4H-SiC/SiO2 capacitors
Authors: Filip, LD; Pintilie, I; Nistor, LC; Svensson, BG

Published: OCT 31 2013, THIN SOLID FILMS, 545, DOI: 10.1016/j.tsf.2013.03.083

67. Structural, electric and magnetic properties of Pb(Zr0.2Ti0.8)O-3-CoFe2O4 heterostructures
Authors: Chirila, C; Ibanescu, G; Hrib, L; Negrea, R; Pasuk, I; Kuncser, V; Pintilie, I; Pintilie, L

Published: OCT 31 2013, THIN SOLID FILMS, 545, DOI: 10.1016/j.tsf.2013.06.033

68. Investigation of X-ray induced radiation damage at the Si-SiO2 interface of silicon sensors for the European XFEL
Authors: Zhang, J; Fretwurst, E; Klanner, R; Pintilie, I; Schwandt, J; Turcato, M

Published: DEC 2012, JOURNAL OF INSTRUMENTATION, 7, C12012, DOI: 10.1088/1748-0221/7/12/C12012

69. The impact of the Pb(Zr,Ti)O-3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure
Authors: Pintilie, I; Pasuk, I; Ibanescu, GA; Negrea, R; Chirila, C; Vasile, E; Pintilie, L

Published: NOV 15 2012, JOURNAL OF APPLIED PHYSICS, 112, 104103, DOI: 10.1063/1.4765723

70. Epitaxial ferromagnetic samarium and samarium silicide synthesized on Si(001)
Authors: Costescu, RM; Gheorghe, NG; Husanu, MA; Lungu, GA; Macovei, D; Pintilie, I; Popescu, DG; Teodorescu, CM

Published: OCT 2012, JOURNAL OF MATERIALS SCIENCE, 47, DOI: 10.1007/s10853-012-6672-z

71. The effect of the top electrode interface on the hysteretic behavior of epitaxial ferroelectric Pb(Zr,Ti)O-3 thin films with bottom SrRuO3 electrode
Authors: Pintilie, L; Pasuk, I; Negrea, R; Filip, LD; Pintilie, I

Published: SEP 15 2012, JOURNAL OF APPLIED PHYSICS, 112, 064116, DOI: 10.1063/1.4754318

72. Structural, dielectric, and piezoelectric properties of fine-grained NBT-BT0.11 ceramic derived from gel precursor
Authors: Cernea, M; Galassi, C; Vasile, BS; Capiani, C; Berbecaru, C; Pintilie, I; Pintilie, L

Published: AUG 2012, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 32, DOI: 10.1016/j.jeurceramsoc.2012.02.021

73. Potential barrier increase due to Gd doping of BiFeO3 layers in Nb:SrTiO3-BiFeO3-Pt structures displaying diode-like behavior
Authors: Khassaf, H; Ibanescu, GA; Pintilie, I; Misirlioglu, IB; Pintilie, L

Published: JUN 18 2012, APPLIED PHYSICS LETTERS, 100, 252903, DOI: 10.1063/1.4729816

74. Study of radiation damage induced by 12 keV X-rays in MOS structures built on high-resistivity n-type silicon
Authors: Zhang, JG; Pintilie, I; Fretwurst, E; Klanner, R; Perrey, H; Schwandt, J

Published: MAY 2012, JOURNAL OF SYNCHROTRON RADIATION, 19, DOI: 10.1107/S0909049512002348

75. The influence of excess nitrogen, on the electrical properties of the 4H-SiC/SiO2 interface
Authors: Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, LS; Svensson, BG

Published: 2011, SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, DOI: 10.4028/www.scientific.net/MSF.679-680.326

76. Non-nitridated oxides: abnormal behaviour of n-4H-SiC/SiO2 capacitors at low temperature caused by near interface states
Authors: Pintilie, I; Moscatell, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, LS; Svensson, BG

Published: 2011, SILICON CARBIDE AND RELATED MATERIALS 2010, 679-680, DOI: 10.4028/www.scientific.net/MSF.679-680.346

77. Silicon detectors for the sLHC
Authors: Affolder, A; Aleev, A; Allport, PP; Andricek, L; Artuso, M; Balbuena, JP; Barabash, L; Barber, T; Barcz, A; Bassignana, D; Bates, R; Battaglia, M; Beimforde, M; Bemardini, J; Betancourt, C; Bilei, GM; Bisello, D; Blue, A; Bohm, J; Bolla, G; Borgia, A; Borrello, L; Bortoletto, D; Boscardin, M; Bosma, MJ; Bowcock, TJV; Breindl, M; Broz, J; Bruzzi, M; Brzozowski, A; Buhmann, P; Buttar, C; Campabadal, F; Candelori, A; Casse, G; Charron, S; Chren, D; Cihangir, S; Cindro, V; Collins, P; Gil, EC; Costinoaia, CA; Creanza, D; Cristobal, C; Dalla Betta, GF; de Boer, W; De Palma, M; Demina, R; Dierlamm, A; Diez, S; Dobos, D; Doherty, F; Kittelmann, ID; Dolezal, Z; Dolgolenko, A; Dragoi, C; Driewer, A; Dutta, S; Eckstein, D; Eklund, L; Eremin, I; Eremin, V; Erfle, J; Fadeeva, N; Fahrer, M; Fiori, F; Fleta, C; Focardi, E; Forshaw, D; Fretwurst, E; Frey, M; Bates, AG; Gallrapp, C; Garcia, C; Gaubas, E; Genest, MH; Giolo, K; Glaser, M; Goessling, C; Golubev, A; Gorelov, I; Gregoire, G; Gregori, P; Grigoriev, E; Grillo, AA; Grinstein, S; Groza, A; Guskov, J; Hansen, TE; Harkonen, J; Hartjes, FG; Hartmann, F; Hoeferkamp, M; Horisberger, R; Houdayer, A; Hynds, D; Ilyashenko, I; Junkes, A; Kadys, A; Kaminski, P; Karpenko, A; Kaska, K; Kazuchits, N; Kazukauskas, V; Kharchuk, A; Khivrich, V; Kierstead, J; Klanner, R; Klingenberg, R; Kodys, P; Koffeman, E; Kohler, M; Kohout, Z; Korjenevski, S; Korolkov, I; Kozlowski, R; Kozubal, M; Kramberger, G; Kuhn, S; Kuleshov, S; Kuznetsov, A; Kwan, S; La Rosa, A; Lacasta, C; Lange, J; Lassila-Perini, K; Lastovetsky, V; Lazanu, I; Lazanu, S; Lebel, C; Lefeuvre, G; Lemaitre, V; Leroy, C; Li, Z; Lindstrom, G; Litovchenko, A; Litovchenko, P; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Macraighne, A; Maenpaa, T; Makarenko, LF; Mandic, I; Maneuski, D; Manna, N; Marco, R; Garcia, SII; Marunko, S; Masek, P; Mathieson, K; Matysek, M; Mekki, J; Messineo, A; Metcalfe, J; Mikestikova, M; Mikuz, M; Militaru, O; Minano, M; Miyamoto, J; Moll, M; Monokhov, E; Mori, R; Moser, HG; Muenstermann, D; Sanchez, FJM; Naletko, A; Nisius, R; Oshea, V; Pacifico, N; Pantano, D; Parkes, C; Parzefall, U; Passeri, D; Pawlowski, M; Pellegrini, G; Pernegger, H; Petasecca, M; Piemonte, C; Pignatel, GU; Pintilie, I; Pintilie, L; Piotrzkowski, K; Placekett, R; Pohlsen, T; Polivtsev, L; Popule, J; Pospisil, S; Preiss, J; Radicci, V; Radu, R; Raf, JM; Rando, R; Richter, R; Roeder, R; Roger, R; Rogozhkin, S; Rohe, T; Ronchin, S; Rott, C; Roy, A; Rummler, A; Ruzin, A; Sadrozinski, HFW; Sakalauskas, S; Samadashvili, N; Scaringella, M; Schumm, B; Seidel, S; Seiden, A; Shipsey, I; Sibille, J; Sicho, P; Slavicek, T; Solar, M; Soldevila-Serrano, U; Son, S; Sopko, V; Sopko, B; Spencer, N; Spiegel, L; Srivastava, A; Steinbrueck, G; Stewart, G; Stolze, D; Storasta, J; Surma, B; Svensson, BG; Tan, P; Tomasek, M; Toms, K; Tsiskaridze, S; Tsvetkov, A; Tuboltsev, Y; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Ullan, M; Vaitkus, JV; van Beuzekom, M; Verbitskaya, E; Alvarez, IV; Visser, J; Vossebeld, J; Vrba, V; Walz, M; Weigell, P; Wiik, L; Wilhelm, I; Wunstorf, R; Zaluzhny, A; Zavrtanik, M; Zelazko, J; Zen, M; Zhukov, V; Zontar, D; Zorzi, N

Published: DEC 1 2011, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 658, DOI: 10.1016/j.nima.2011.04.045

78. Study of X-ray radiation damage in silicon sensors
Authors: Zhang, J; Fretwurst, E; Klanner, R; Perrey, H; Pintilie, I; Poehlsen, T; Schwandt, J

Published: NOV 2011, JOURNAL OF INSTRUMENTATION, 6, C11013, DOI: 10.1088/1748-0221/6/11/C11013

79. Interface controlled photovoltaic effect in epitaxial Pb(Zr,Ti)O-3 films with tetragonal structure
Authors: Pintilie, L; Dragoi, C; Pintilie, I

Published: AUG 15 2011, JOURNAL OF APPLIED PHYSICS, 110, 044105, DOI: 10.1063/1.3624738

80. Short-term repeatability of a rad-hard EPI diode applied in electron processing dosimetry
Authors: dos Santos, TC; Goncalves, JAC; Pintilie, I; Bueno, CC

Published: 2011, 2011 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (NSS/MIC), DOI:

81. Ferroelectric Schottky diode behavior from a SrRuO3-Pb(Zr0.2Ti0.8)O-3-Ta structure
Authors: Pintilie, L; Stancu, V; Trupina, L; Pintilie, I

Published: AUG 18 2010, PHYSICAL REVIEW B, 82, 085319, DOI: 10.1103/PhysRevB.82.085319

82. Analysis of electron traps at the 4H-SiC/SiO2 interface; influence by nitrogen implantation prior to wet oxidation
Authors: Pintilie, I; Teodorescu, CM; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Lovlie, LS; Svensson, BG

Published: JUL 15 2010, JOURNAL OF APPLIED PHYSICS, 108, 024503, DOI: 10.1063/1.3457906

83. About the complex relation between short-circuit photocurrent, imprint and polarization in ferroelectric thin films
Authors: Pintilie, L; Stancu, V; Vasile, E; Pintilie, I

Published: JUN 1 2010, JOURNAL OF APPLIED PHYSICS, 107, 114111, DOI: 10.1063/1.3445877

84. Annealing study of a bistable cluster defect
Authors: Junkes, A; Eckstein, D; Pintilie, I; Makarenko, LF; Fretwurst, E

Published: JAN 11 2010, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 612, DOI: 10.1016/j.nima.2009.08.021

85. Temperature induced change in the hysteretic behavior of the capacitance-voltage characteristics of Pt-ZnO-Pb(Zr0.2Ti0.8)O-3-Pt heterostructures
Authors: Pintilie, L; Dragoi, C; Radu, R; Costinoaia, A; Stancu, V; Pintilie, I

Published: JAN 4 2010, APPLIED PHYSICS LETTERS, 96, 012903, DOI: 10.1063/1.3284659

86. Radiation-induced point- and cluster-related defects with strong impact on damage properties of silicon detectors
Authors: Pintilie, I; Lindstroem, G; Junkes, A; Fretwurst, E

Published: NOV 21 2009, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 611, DOI: 10.1016/j.nima.2009.09.065

87. Radiation induced point- and cluster-related defects with strong impact to damage properties of silicon detectors
Authors: Pintilie, I; Fretwurst, E; Junkes, A; Lindstroem, G

Published: 2009, 2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9, DOI:

88. Study of the Radiation Hardness of Silicon Sensors for the XFEL
Authors: Fretwurst, E; Januschek, F; Klanner, R; Perrey, H; Pintilie, I; Renn, F

Published: 2009, 2008 IEEE NUCLEAR SCIENCE SYMPOSIUM AND MEDICAL IMAGING CONFERENCE (2008 NSS/MIC), VOLS 1-9, DOI:

89. The Influence of the Electrode Type on the Electric-Ferroelectric Properties of Sandwich PbZr0.2Ti0.8O3-BiFeO3-PbZr0.2Ti0.8O3 Structure
Authors: Pintilie, L; Dragoi, C; Stancu, V; Pintilie, I

Published: 2009, FERROELECTRICS, 391, DOI: 10.1080/00150190903001235

90. The Influence of Growth Conditions on the Annealing of Irradiation Induced EH6,7 Defects in 4H-SiC
Authors: Pintilie, I; Lovlie, LS; Irmscher, K; Wagner, G; Svensson, BG; Thomas, B

Published: 2009, SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, DOI: 10.4028/www.scientific.net/MSF.615-617.369

91. Interface States in 4H-and 6H-SiC MOS Capacitors: a Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique
Authors: Lovlie, LS; Pintilie, I; Kumar, SCP; Grossner, U; Svensson, BG; Beljakowa, S; Reshanov, SA; Krieger, M; Pensl, G

Published: 2009, SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, DOI: 10.4028/www.scientific.net/MSF.615-617.497

92. Analysis of the Electron Traps at the 4H-SiC/SiO2 Interface of a Gate Oxide Obtained by Wet Oxidation of a Nitrogen pre-Implanted Layer
Authors: Pintilie, I; Moscatelli, F; Nipoti, R; Poggi, A; Solmi, S; Svensson, BG

Published: 2009, SILICON CARBIDE AND RELATED MATERIALS 2008, 615-617, DOI: 10.4028/www.scientific.net/MSF.615-617.533

93. Investigation of metal-oxide semiconductor field-effect transistor-like Si/SiO2/(nano)crystalline PbS heterostructures
Authors: Stancu, V; Buda, M; Pintilie, L; Pintilie, I; Botila, T; Iordache, G

Published: APR 30 2008, THIN SOLID FILMS, 516, DOI: 10.1016/j.tsf.2007.11.116

94. Capacitance-voltage characteristics of heterostructures with high leakage currents
Authors: Goldenblum, A; Stancu, V; Buda, M; Iordache, G; Pintilie, I; Negrila, C; Botila, T

Published: MAR 1 2008, JOURNAL OF APPLIED PHYSICS, 103, 056107, DOI: 10.1063/1.2844210

95. Investigation of nanocrystalline Pbs/n-Si heterostructures for optoelectronic applications
Authors: Buda, M; Stancu, V; Iordache, G; Pintilie, L; Pintilie, I; Buda, M; Botila, T

Published: FEB 15 2008, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 147, DOI: 10.1016/j.mseb.2007.09.070

96. Rapid annealing of the vacancy-oxygen center and the divacancy center by diffusing hydrogen in silicon
Authors: Bleka, JH; Pintilie, I; Monakhov, EV; Avset, BS; Svensson, BG

Published: FEB 2008, PHYSICAL REVIEW B, 77, 073206, DOI: 10.1103/PhysRevB.77.073206

97. Cluster related hole traps with enhanced-field-emission - the source for long term annealing in hadron irradiated Si diodes
Authors: Pintilie, I; Fretwurst, E; Lindstrom, G

Published: JAN 14 2008, APPLIED PHYSICS LETTERS, 92, 024101, DOI: 10.1063/1.2832646

98. ELECTRIC, FERROELECTRIC AND PHOTOELECTRIC PROPERTIES OF Pb(Zr,Ti)O-3-Nb:SrTiO3 JUNCTIONS
Authors: Pintilie, L; Pintilie, I; Vrejoiu, I; Alexe, M

Published: 2008, CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, DOI: 10.1109/SMICND.2008.4703406

99. Localized energy levels generated in Magnetic Czochralski silicon by proton irradiation and their influence on the sign of space charge density
Authors: Scaringella, M; Menichelli, D; Bruzzi, M; Macchiolo, A; Piemonte, C; Zorzi, N; Candelori, A; Eremin, V; Verbitskaya, E; Pintilie, I

Published: JAN 11 2007, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 570, DOI: 10.1016/j.nima.2006.09.033

100. Radiation damage studies on MCz and standard and oxygen enriched epitaxial silicon devices
Authors: Fretwurst, E; Honniger, F; Kramberger, G; Lindstrom, G; Pintilie, I; Roder, R

Published: DEC 11 2007, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 583, DOI: 10.1016/j.nima.2007.08.194

101. DLTS measurements of radiation induced defects in epitaxial and MCz silicon detectors
Authors: Honniger, F; Fretwurst, E; Lindstrom, G; Kramberger, G; Pintilie, I; Roder, R

Published: DEC 11 2007, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 583, DOI: 10.1016/j.nima.2007.08.202

102. Shallow energy levels induced by gamma rays in standard and oxygenated floating zone silicon
Authors: Menichelli, D; Scaringella, M; Miglio, S; Bruzzi, M; Pintilie, I; Fretwurst, E

Published: SEP 2006, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 84, DOI: 10.1007/s00339-006-3640-y

103. Electrical properties of as-grown molecular beam epitaxy high-k gate dielectrics deposited on silicon
Authors: Goldenblum, A; Pintilie, I; Buda, M; Popa, A; Lisca, M; Botila, T; Teodorescu, V; Dimoulas, A; Vellianitis, G

Published: MAR 15 2006, JOURNAL OF APPLIED PHYSICS, 99, 064105, DOI: 10.1063/1.2180428

104. Radiation tolerance of epitaxial silicon detectors at very large proton fluences
Authors: Lindstrom, G; Fretwurst, E; Honniger, F; Kramberger, G; Moller-Iven, M; Pintilie, I; Schramm, A

Published: JAN 15 2006, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 556, DOI: 10.1016/j.nima.2005.10.103

105. Stable radiation-induced donor generation and its influence on the radiation tolerance of silicon diodes
Authors: Pintilie, I; Buda, M; Fretwurst, E; Lindstrom, G; Stahl, J

Published: JAN 1 2006, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 556, DOI: 10.1016/j.nima.2005.10.013

106. Epitaxial silicon detectors for particle tracking - Radiation tolerance at extreme hadron fluences
Authors: Lindstrom, G; Dolenc, I; Fretwurst, E; Honniger, F; Kramberger, G; Moll, M; Nossarzewska, E; Pintilie, I; Roder, R

Published: NOV 30 2006, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 568, DOI: 10.1016/j.nima.2006.05.203

107. Effect of hydrogenation on defect reactions in silicon particle detectors
Authors: Makarenko, LF; Korshunov, FP; Lastovski, SB; Kazuchits, NM; Rusetsky, MS; Fretwurst, E; Lindstrom, G; Moll, M; Pintilie, I; Zamiatin, NI

Published: 2005, GETTERING AND DEFECT ENGINEERING IN SEMICONDUCTOR TECHNOLOGY XI, 108-109, DOI: 10.4028/www.scientific.net/SSP.108-109.217

108. Recent advancements in the development of radiation hard semiconductor detectors for S-LHC
Authors: Fretwurst, E; Adey, J; Al-Ajili, A; Alfieri, G; Allport, PP; Artuso, M; Assouak, S; Avset, BS; Barabashi, L; Barcz, A; Bates, R; Biagi, SF; Bilei, GM; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bolla, G; Bondarenko, G; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, TJV; Brodbeck, TJ; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, L; Dalla Betta, GF; Dawson, I; de Boer, W; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Garcia, C; Garcia-Navarro, JE; Gaubas, E; Genest, MH; Gill, KA; Giolo, K; Glaser, M; Goessling, C; Golovine, V; Sevilla, SG; Gorelov, I; Goss, J; Bates, AG; Gregoire, G; Gregori, P; Grigoriev, E; Grillo, AA; Groza, A; Guskov, J; Haddad, L; Harkonen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, I; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, KMH; Jones, BK; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J; Klaiber-Lodewigs, J; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K; Lastovetsky, V; Latino, G; Lazanu, I; Lazanu, S; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindstrom, G; Linhart, V; Litovchenko, P; Litovchenko, A; Giudice, AL; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, LF; Mandic, I; Manfredotti, C; Manna, N; Garcia, SM; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzewska-Orlowska, E; Nysten, J; Olivero, P; Oshea, V; Palviainen, T; Paolini, C; Parkes, C; Pesseri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Plemonte, C; Pignatel, GU; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospisil, S; Pozza, A; Radicci, V; Rafi, JM; Rando, R; Roeder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, HFW; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P; Sentenac, D; Shipsey, I; Sicho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, BG; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullan, M; Vaitkus, JV; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 552, DOI: 10.1016/j.nima.2005.05.039

109. Characterization of oxygen dimer-enriched silicon detectors
Authors: Boisvert, V; Lindstrom, JL; Moll, M; Murin, LI; Pintilie, I

Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 552, DOI: 10.1016/j.nima.2005.06.005

110. Radiation-induced donor generation in epitaxial and Cz diodes
Authors: Pintilie, I; Buda, M; Fretwurst, E; Honniger, F; Lindstrom, G; Stahl, J

Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 552, DOI: 10.1016/j.nima.2005.06.006

111. Elimination and formation of electrically active defects in hydrogenated silicon particle detectors irradiated with electrons
Authors: Makarenko, LF; Korshunov, FP; Lastovski, SB; Kazuchits, NM; Rusetsky, MS; Fretwurst, E; Lindstrom, G; Moll, M; Pintilie, I; Zamiatin, NI

Published: OCT 21 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 552, DOI: 10.1016/j.nima.2005.06.010

112. Development of radiation tolerant semiconductor detectors for the Super-LHC
Authors: Moll, M; Adey, J; Al-Ajili, A; Alfieri, G; Allport, PP; Artuso, M; Assouak, S; Avset, BS; Barabash, L; Barcz, A; Bates, R; Biagi, SF; Bilei, GM; Bisello, D; Blue, A; Blumenau, A; Boisvert, V; Bolla, G; Bondarenko, G; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, TJV; Brodbeck, TJ; Broz, J; Bruzzi, M; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Charron, S; Chilingarov, A; Chren, D; Cindro, V; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Dalla Betta, GF; Dawson, I; de Boer, W; De Palma, M; Demina, R; Dervan, P; Dittongo, S; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Fretwurst, E; Garcia, C; Garcia-Navarro, JE; Gaubas, E; Genest, MH; Gill, KA; Giolo, K; Glaser, M; Goessling, C; Golovine, V; Sevilla, SG; Gorelov, I; Goss, J; Bates, AG; Gregoire, G; Gregori, P; Grigoriev, E; Grillo, AA; Groza, A; Guskov, J; Haddad, L; Harkonen, J; Hauler, F; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R; Horn, M; Houdayer, A; Hourahine, B; Hughes, G; Ilyashenko, I; Irmscher, K; Ivanov, A; Jarasiunas, K; Johansen, KMH; Jones, BK; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J; Klaiber-Lodewigs, J; Klingenberga, R; Kodys, P; Kohout, Z; Korjenevski, S; Koski, M; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lassila-Perini, K; Lastovetsky, V; Latino, G; Lazanu, S; Lazanu, I; Lebedev, A; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindstrom, G; Linhart, V; Litovchenko, A; Litovchenko, P; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Makarenko, LF; Mandic, I; Manfredotti, C; Manna, N; Marti i Garcia, S; Marunko, S; Mathieson, K; Melone, J; Menichelli, D; Messineo, A; Metcalfe, J; Miglio, S; Mikuz, M; Miyamoto, J; Monakhov, E; Moscatelli, F; Naoumov, D; Nossarzewska-Orlowska, E; Nysten, J; Olivera, P; OShea, V; Palvialnen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, K; Piemonte, C; Pignatel, GU; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, A; Popule, J; Pospisil, S; Pozza, A; Radicci, V; Rafi, JM; Rando, R; Roeder, R; Rohe, T; Ronchin, S; Rott, C; Roy, A; Ruzin, A; Sadrozinski, HFW; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P; Sentenac, D; Shipsey, I; Sicho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Sopko, V; Spencer, N; Stahl, J; Stolze, D; Stone, R; Storasta, J; Strokan, N; Sudzius, M; Surma, B; Suvorov, A; Svensson, BG; Tipton, P; Tomasek, M; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullan, M; Vaitkus, JV; Velthuis, J; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Yiuri, Y; Zabierowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

Published: JUL 1 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 546, DOI: 10.1016/j.nima.2005.03.044

113. Space-charge-limited current involving carrier injection into impurity bands of high-k insulators
Authors: Goldenblum, A; Pintilie, I; Buda, M; Popa, A; Botila, T; Dimoulas, A; Vellianitis, G

Published: MAY 16 2005, APPLIED PHYSICS LETTERS, 86, 203506, DOI: 10.1063/1.1935045

114. Radiation-hard semiconductor detectors for SuperLHC
Authors: Bruzzi, M; Adey, J; Al-Ajili, A; Alexandrov, P; Alfieri, G; Allport, PP; Andreazza, A; Artuso, M; Assouak, S; Avset, BS; Barabash, L; Baranova, E; Barcz, A; Basile, A; Bates, R; Belova, N; Biagi, SF; Bilei, GM; Bisello, D; Blue, A; Blumenau, B; Boisvert, V; Bolla, G; Bondarenko, G; Borchi, E; Borrello, L; Bortoletto, D; Boscardin, M; Bosisio, L; Bowcock, TJV; Brodbeck, TJ; Broz, J; Brukhanov, A; Brzozowski, A; Buda, M; Buhmann, P; Buttar, C; Campabadal, F; Campbell, D; Candelori, A; Casse, G; Cavallini, A; Chilingarov, A; Chren, D; Cindro, V; Citterio, M; Collins, P; Coluccia, R; Contarato, D; Coutinho, J; Creanza, D; Cunningham, W; Cvetkov, V; Dalla Betta, GF; Davies, G; Dawson, I; de Boer, W; De Palma, M; Demina, R; Dervan, P; Dierlamm, A; Dittongo, S; Dobrzanski, L; Dolezal, Z; Dolgolenko, A; Eberlein, T; Eremin, V; Fall, C; Fasolo, F; Ferbel, T; Fizzotti, F; Fleta, C; Focardi, E; Forton, E; Franchenko, S; Fretwurst, E; Gamaz, F; Garcia, C; Garcia-Navarro, JE; Gaubas, E; Genest, MH; Gill, KA; Giolo, K; Glaser, M; Goessling, C; Golovine, V; Sevilla, SG; Gorelov, I; Goss, J; Gouldwell, A; Gregoire, G; Gregori, P; Grigoriev, E; Grigson, C; Grillo, A; Groza, A; Guskov, J; Haddad, L; Harkonen, J; Harding, R; Hauler, F; Hayama, S; Hoeferkamp, M; Honniger, F; Horazdovsky, T; Horisberger, R; Horn, M; Houdayer, A; Hourahine, B; Hruban, A; Hughes, G; Ilyashenko, I; Irmscher, K; Ivanov, A; Jarasiunas, K; Jin, T; Jones, BK; Jones, R; Joram, C; Jungermann, L; Kalinina, E; Kaminski, P; Karpenko, A; Karpov, A; Kazlauskiene, V; Kazukauskas, V; Khivrich, V; Khomenkov, V; Kierstead, J; Klaiber-Lodewigs, J; Kleverman, M; Klingenberg, R; Kodys, P; Kohout, Z; Korjenevski, S; Kowalik, A; Kozlowski, R; Kozodaev, M; Kramberger, G; Krasel, O; Kuznetsov, A; Kwan, S; Lagomarsino, S; Lari, T; Lassila-Perini, K; Lastovetsky, V; Latino, G; Latushkin, S; Lazanu, S; Lazanu, I; Lebel, C; Leinonen, K; Leroy, C; Li, Z; Lindstrom, G; Lindstrom, L; Linhart, V; Litovchenko, A; Litovchenko, P; Litvinov, V; Lo Giudice, A; Lozano, M; Luczynski, Z; Luukka, P; Macchiolo, A; Mainwood, A; Makarenko, LF; Mandic, I; Manfredotti, C; Garcia, SM; Marunko, S; Mathieson, K; Mozzanti, A; Melone, J; Menichelli, D; Meroni, C; Messineo, A; Miglio, S; Mikuz, M; Miyamoto, J; Moll, M; Monakhov, E; Moscatelli, F; Murin, L; Nava, F; Naoumov, D; Nossarzewska-Orlowska, E; Nummela, S; Nysten, J; Olivero, P; Oshea, V; Palviainen, T; Paolini, C; Parkes, C; Passeri, D; Pein, U; Pellegrini, G; Perera, L; Petasecca, M; Piatkowski, B; Piemonte, C; Pignatel, GU; Pinho, N; Pintilie, I; Pintilie, L; Polivtsev, L; Polozov, P; Popa, AI; Popule, J; Pospisil, S; Pucker, G; Radicci, V; Rafi, JM; Ragusa, F; Rahman, M; Rando, R; Roeder, R; Rohe, T; Ronchin, S; Rott, C; Roy, P; Roy, A; Ruzin, A; Ryazanov, A; Sadrozinski, HFW; Sakalauskas, S; Scaringella, M; Schiavulli, L; Schnetzer, S; Schumm, B; Sciortino, S; Scorzoni, A; Segneri, G; Seidel, S; Seiden, A; Sellberg, G; Sellin, P; Sentenac, D; Shipsey, I; Sicho, P; Sloan, T; Solar, M; Son, S; Sopko, B; Spencer, N; Stahl, J; Stavitski, I; Stolze, D; Stone, R; Storasta, J; Strokan, N; Strupinski, W; Sudzius, M; Surma, B; Suuronen, J; Suvorov, A; Svensson, BG; Tipton, P; Tomasek, M; Troncon, C; Tsvetkov, A; Tuominen, E; Tuovinen, E; Tuuva, T; Tylchin, M; Uebersee, H; Uher, J; Ullan, M; Vaitkus, JV; Vanni, P; Velthuis, J; Verzellesi, G; Verbitskaya, E; Vrba, V; Wagner, G; Wilhelm, I; Worm, S; Wright, V; Wunstorf, R; Zablerowski, P; Zaluzhny, A; Zavrtanik, M; Zen, M; Zhukov, V; Zorzi, N

Published: APR 1 2005, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 541, DOI: 10.1016/j.nima.2005.01.056

115. Anomalous current transients related to defect discharge in irradiated silicon diodes
Authors: Menichelli, D; Scaringella, M; Bruzzi, M; Pintilie, I; Fretwurst, E

Published: NOV 2004, PHYSICAL REVIEW B, 70, 195209, DOI: 10.1103/PhysRevB.70.195209

116. Influence of deep levels on space charge density at different temperatures in gamma-irradiated silicon
Authors: Menichelli, D; Scaringella, M; Miglio, S; Bruzzi, M; Li, Z; Fretwurst, E; Pintilie, I

Published: SEP 1 2004, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 530, DOI: 10.1016/j.nima.2004.05.062

117. Electrical properties of metal-oxide-silicon structures with LaAlO3 as gate oxide
Authors: Mereu, B; Sarau, G; Dimoulas, A; Apostolopoulos, G; Pintilie, I; Botila, T; Pintilie, L; Alexe, A

Published: JUN 15 2004, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 109, DOI: 10.1016/j.mseb.2003.10.054

118. Toward super radiation tolerant semiconductor detectors for future elementary particle research
Authors: Lindstroem, G; Fretwurst, E; Kramberger, G; Pintilie, I

Published: MAR 2004, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 6, DOI:

119. Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for "type inversion"
Authors: Pintilie, I; Fretwurst, E; Lindstrom, G; Stahl, J

Published: MAR 31 2003, APPLIED PHYSICS LETTERS, 82, DOI: 10.1063/1.1564869

120. Second-order generation of point defects in highly irradiated float zone silicon - annealing studies
Authors: Pintilie, I; Fretwurst, E; Kramberger, G; Lindstroem, G; Li, Z; Stahl, J

Published: DEC 31 2003, PHYSICA B-CONDENSED MATTER, 340, DOI: 10.1016/j.physb.2003.09.131

121. Radiation hardness of silicon - a challenge for defect engineering
Authors: Stahl, J; Fretwurst, E; Lindstroem, G; Pintilie, I

Published: DEC 31 2003, PHYSICA B-CONDENSED MATTER, 340, DOI: 10.1016/j.physb.2003.09.238

122. Superior radiation tolerance of thin epitaxial silicon detectors
Authors: Kramberger, G; Contarato, D; Fretwurst, E; Honniger, F; Lindstrom, G; Pintilie, I; Roder, R; Schramm, A; Stahl, J

Published: DEC 11 2003, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 515, DOI: 10.1016/j.nima.2003.07.021

123. Field effect assisted thermally stimulated currents in CdS thin films deposited on SiO2/Si substrates
Authors: Lisca, M; Pentia, E; Saran, G; Pintilie, L; Pintilie, I; Botila, T

Published: DEC 2003, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 5, DOI:

124. Bulk damage effects in standard and oxygen-enriched silicon detectors induced by Co-60-gamma radiation
Authors: Fretwurst, E; Lindstrom, G; Stahl, J; Pintilie, I; Li, Z; Kierstead, J; Verbitskaya, E; Roder, R

Published: NOV 21 2003, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 514, DOI: 10.1016/j.nima.2003.08.077

125. Results on defects induced by Co-60 gamma irradiation in standard and oxygen-enriched silicon
Authors: Pintilie, I; Fretwurst, E; Lindstrom, G; Stahl, J

Published: NOV 21 2003, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 514, DOI: 10.1016/j.nima.2003.08.079

126. Second-order generation of point defects in gamma-irradiated float-zone silicon, an explanation for 'type inversion' (vol 82, pg 2169, 2003)
Authors: Pintilie, I; Fretwurst, E; Lindstrom, G; Stahl, J

Published: OCT 13 2003, APPLIED PHYSICS LETTERS, 83, DOI: 10.1063/1.1619226

127. Deep defect levels in standard and oxygen enriched silicon detectors before and after Co-60-gamma-irradiation
Authors: Stahl, J; Fretwurst, E; Lindstrom, G; Pintilie, I

Published: OCT 11 2003, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 512, DOI: 10.1016/S0168-9002(03)01884-9

128. Bi influence on growth and physical properties of chemical deposited PbS films
Authors: Pentia, E; Pintilie, L; Botila, T; Pintilie, I; Chaparro, A; Maffiotte, C

Published: JUN 23 2003, THIN SOLID FILMS, 434, DOI: 10.1016/S0040-6090(03)00449-8

129. Combined chemical-physical methods for enhancing IR photoconductive properties of PbS thin films
Authors: Pentia, E; Pintilie, L; Matei, I; Botila, T; Pintilie, I

Published: JUN 2003, INFRARED PHYSICS & TECHNOLOGY, 44, DOI: 10.1016/S1350-4495(02)00225-6

130. Formation of the Z(1,2) deep-level defects in 4H-SiC epitaxial layers: Evidence for nitrogen participation
Authors: Pintilie, I; Pintilie, L; Irmscher, K; Thomas, B

Published: DEC 16 2002, APPLIED PHYSICS LETTERS, 81, DOI: 10.1063/1.1529314

131. Close to midgap trapping level in Co-60 gamma irradiated silicon detectors
Authors: Pintilie, I; Fretwurst, E; Lindstrom, G; Stahl, J

Published: JUL 1 2002, APPLIED PHYSICS LETTERS, 81, DOI: 10.1063/1.1490397

132. Field-effect-assisted photoconductivity in PbS films deposited on silicon dioxide
Authors: Pintilie, L; Pentia, E; Matei, I; Pintilie, I; Ozbay, E

Published: MAY 1 2002, JOURNAL OF APPLIED PHYSICS, 91, DOI: 10.1063/1.1468277

133. Thermally stimulated current method applied to highly irradiated silicon diodes
Authors: Pintilie, I; Tivarus, C; Pintilie, L; Moll, M; Fretwurst, E; Lindstroem, G

Published: JAN 11 2002, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 476, DOI: 10.1016/S0168-9002(01)01654-0

134. Field effect controlled photoresistors based on chemically deposited PbS films
Authors: Pentia, E; Pintilie, L; Matei, I; Pintilie, I

Published: 2002, PROGRESS IN SEMICONDUCTOR MATERIALS FOR OPTOELECTRONIC APPLICATIONS, 692, DOI:

135. Deep levels in as-grown 4H-SiC epitaxial layers and their correlation with CVD parameters
Authors: Pintilie, I; Pintilie, L; Irmscher, K; Thomas, B

Published: 2002, SILICON CARBIDE AND RELATED MATERIALS - 2002, 433-4, DOI:

136. Deep level defects in sublimation-grown 6H silicon carbide investigated by DLTS and EPR
Authors: Irmscher, K; Pintilie, I; Pintilie, L; Schulz, D

Published: DEC 2001, PHYSICA B-CONDENSED MATTER, 308, DOI: 10.1016/S0921-4526(01)00887-0

137. Radiation hard silicon detectors - developments by the RD48 (ROSE) collaboration
Authors: Lindstrom, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, MM; Augelli, V; Bacchetta, N; Bartalini, P; Bates, R; Biggeri, U; Bilei, GM; Bisello, D; Boemi, D; Borchi, E; Botila, T; Brodbeck, TJ; Bruzzi, M; Budzynski, T; Burger, P; Campabadal, F; Casse, G; Catacchini, E; Chilingarov, A; Ciampolini, P; Cindro, V; Costa, MJ; Creanza, D; Clauws, P; Da Via, C; Davies, G; De Boer, W; Dell'Orso, R; De Palma, M; Dezillie, B; Eremin, V; Evrard, O; Fallica, G; Fanourakis, G; Feick, H; Focardi, E; Fonseca, L; Fretwurst, E; Fuster, J; Gabathuler, K; Glaser, M; Grabiec, P; Grigoriev, E; Hall, G; Hanlon, M; Hauler, F; Heising, S; Holmes-Siedle, A; Horisberger, R; Hughes, G; Huhtinen, M; Ilyashenko, I; Ivanov, A; Jones, BK; Jungermann, L; Kaminsky, A; Kohout, Z; Kramberger, G; Kuhnke, M; Kwan, S; Lemeilleur, F; Leroy, C; Letheren, M; Li, Z; Ligonzo, T; Linhart, V; Litovchenko, P; Loukas, D; Lozano, M; Luczynski, Z; Lutz, G; MacEvoy, B; Manolopoulos, S; Markou, A; Martinez, C; Messineo, A; Mikuz, M; Moll, M; Nossarzewska, E; Ottaviani, G; Oshea, V; Parrini, G; Passeri, D; Petre, D; Pickford, A; Pintilie, I; Pintilie, L; Pospisil, S; Potenza, R; Raine, C; Rafi, JM; Ratoff, PN; Richter, RH; Riedler, P; Roe, S; Roy, P; Ruzin, A; Ryazanov, AI; Santocchia, A; Schiavulli, L; Sicho, P; Siotis, I; Sloan, T; Slysz, W; Smith, K; Solanky, M; Sopko, B; Stolze, K; Avset, BS; Svensson, B; Tivarus, C; Tonelli, G; Tricomi, A; Tzamarias, S; Valvo, G; Vasilescu, A; Vayaki, A; Verbitskaya, E; Verdini, P; Vrba, V; Watts, S; Weber, ER; Wegrzecki, M; Wegrzecka, I; Weilhammer, P; Wheadon, R; Wilburn, C; Wilhelm, I; Wunstorf, R; Wustenfeld, J; Wyss, J; Zankel, K; Zabierowski, P; Zontar, D

Published: JUL 1 2001, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 466, DOI: 10.1016/S0168-9002(01)00560-5

138. Developments for radiation hard silicon detectors by defect engineering - results by the CERN RD48 (ROSE) Collaboration
Authors: Lindstrom, G; Ahmed, M; Albergo, S; Allport, P; Anderson, D; Andricek, L; Angarano, MM; Augelli, V; Bacchetta, N; Bartalini, P; Bates, R; Biggeri, U; Bilei, GM; Bisello, D; Boemi, D; Borchi, E; Botila, T; Brodbeck, TJ; Bruzzi, M; Budzynski, T; Burger, P; Campabadal, F; Casse, G; Catacchini, E; Chilingarov, A; Ciampolini, P; Cindro, V; Costa, MJ; Creanza, D; Clauws, P; Da Via, C; Davies, G; De Boer, W; Dell'Orso, R; De Palma, M; Dezillie, B; Eremin, V; Evrard, O; Fallica, G; Fanourakis, G; Feick, H; Focardi, E; Fonseca, L; Fretwurst, E; Fuster, J; Gabathuler, K; Glaser, M; Grabiec, P; Grigoriev, E; Hall, G; Hanlon, M; Hauler, F; Heising, S; Holmes-Siedle, A; Horisberger, R; Hughes, G; Huhtinen, M; Ilyashenko, I; Ivanov, A; Jones, BK; Jungermann, L; Kaminsky, A; Kohout, Z; Kramberger, G; Kuhnke, M; Kwan, S; Lemeilleur, F; Leroy, C; Letheren, M; Li, Z; Ligonzo, T; Linhart, V; Litovchenko, P; Loukas, D; Lozano, M; Luczynski, Z; Lutz, G; MacEvoy, B; Manolopoulos, S; Markou, A; Martinez, C; Messineo, A; Mikuz, M; Moll, M; Nossarzewska, E; Ottaviani, G; Oshea, V; Parrini, G; Passeri, D; Petre, D; Pickford, A; Pintilie, I; Pintilie, L; Pospisil, S; Potenza, R; Radicci, V; Raine, C; Rafi, JM; Ratoff, PN; Richter, RH; Riedler, P; Roe, S; Roy, P; Ruzin, A; Ryazanov, AI; Santocchia, A; Schiavulli, L; Sicho, P; Siotis, I; Sloan, T; Slysz, W; Smith, K; Solanky, M; Sopko, B; Stolze, K; Avset, BS; Svensson, B; Tivarus, C; Tonelli, G; Tricomi, A; Tzamarias, S; Valvo, G; Vasilescu, A; Vayaki, A; Verbitskaya, E; Verdini, P; Vrba, V; Watts, S; Weber, ER; Wegrzecki, M; Wegrzecka, I; Weilhammer, P; Wheadon, R; Wilburn, C; Wilhelm, I; Wunstorf, R; Wustenfeld, J; Wyss, J; Zankel, K; Zabierowski, P; Zontar, D

Published: JUN 1 2001, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 465, DOI: 10.1016/S0168-9002(01)00347-3

139. Influence of Sb3+ ions on photoconductive properties of chemically deposited PbS films
Authors: Pentia, E; Pintilie, L; Tivarus, C; Pintilie, I; Botila, T

Published: MAR 22 2001, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 80, DOI: 10.1016/S0921-5107(00)00578-X

140. Ferroelectrics: new wide-gap materials for UV detection
Authors: Pintilie, L; Pintilie, I

Published: MAR 22 2001, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 80, DOI: 10.1016/S0921-5107(00)00605-X

141. Thermally stimulated current method applied on diodes with high concentration of deep trapping levels
Authors: Pintilie, I; Pintilie, L; Moll, M; Fretwurst, E; Lindstroem, G

Published: JAN 22 2001, APPLIED PHYSICS LETTERS, 78, DOI: 10.1063/1.1335852

142. Equivalent pyroelectric coefficient of a pyroelectric bimorph structure
Authors: Pintilie, L; Pintilie, I; Matei, I

Published: DEC 15 2000, JOURNAL OF APPLIED PHYSICS, 88, DOI: 10.1063/1.1327284

143. Field effect enhanced signal-to-noise ratio in chemically deposited PbS thin films on Si3N4/n-Si substrates
Authors: Pintilie, L; Pentia, E; Pintilie, I; Botila, T

Published: APR 3 2000, APPLIED PHYSICS LETTERS, 76, DOI: 10.1063/1.126202

144. Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
Authors: Pintilie, I; Tivarus, C; Botila, T; Petre, D; Pintilie, L

Published: JAN 11 2000, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 439, DOI: 10.1016/S0168-9002(99)00887-6

145. Investigation of trapping levels in standard, nitrogenated and oxygenated Si p-n junctions by thermally stimulated currents
Authors: Pintilie, I; Petre, D; Pintilie, L; Tivarus, C; Petris, M; Botila, T

Published: JAN 11 2000, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND, 439, DOI: 10.1016/S0168-9002(99)00845-1

146. Some annealing effects in proton irradiated silicon detectors
Authors: Pintilie, I; Petris, M; Tivarus, C; Moll, M; Fretwurst, E; Lindstroem, G

Published: 2000, 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, DOI:

147. Preparation and ferroelectric properties of graded Pb(TiXZr1-X)O-3 thin films
Authors: Boerasu, I; Pintilie, L; Matei, I; Pintilie, I

Published: 2000, 2000 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, CAS 2000 PROCEEDINGS, DOI:

148. The influence of cadmium salt anion on the growth mechanism and on the physical properties of CdS thin films
Authors: Pentia, E; Pintilie, L; Pintilie, I; Botila, T

Published: 2000, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2, DOI:

149. Trap characterization for Bi4Ti3O12 thin films by thermally stimulated currents
Authors: Pintilie, L; Pintilie, I; Petre, D; Botila, T; Alexe, M

Published: JUL 1999, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 69, DOI: 10.1007/s003390050980

150. The influence of Cu doping on opto-electronic properties of chemically deposited CdS
Authors: Petre, D; Pintilie, I; Pentia, E; Pintilie, L; Botila, T

Published: MAR 29 1999, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 58, DOI: 10.1016/S0921-5107(98)00435-8

151. Photoconductive properties of Bi4Ti3O12/Si heterostructures with different thickness of the Bi4Ti3O12 film
Authors: Pintilie, L; Pintilie, I; Alexe, M

Published: 1999, JOURNAL OF THE EUROPEAN CERAMIC SOCIETY, 19, DOI: 10.1016/S0955-2219(98)00455-5

152. Investigation of deep impurity levels in high resistivity silicon using optical charging spectroscopy
Authors: Botila, T; Brancus, D; Pintilie, I; Pintilie, L; Petre, D

Published: 1998, DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, DOI:

153. Electrical and optical characterization of PbTiO3/Si heterostructures for applications in optoelectronics
Authors: Dragoi, V; Pintilie, L; Pintilie, I; Petre, D; Boerasu, I; Alexe, M

Published: 1998, FIFTH CONFERENCE ON OPTICS (ROMOPTO '97), PTS 1 AND 2, 3405, DOI: 10.1117/12.312674

154. Theoretical background of the optical charging spectroscopy method used for investigation of trapping levels
Authors: Pintilie, I; Pintilie, L; Petre, D; Tivarus, C; Botila, T

Published: SEP 21 1998, APPLIED PHYSICS LETTERS, 73, DOI: 10.1063/1.122245

155. Indirect enhancement of PbS photoconductivity by ferroelectric field effect in a PbS/PbTiO3/Si heterostructure
Authors: Pintilie, I; Pintilie, L; Dragoi, V; Petre, D; Botila, T

Published: AUG 25 1997, APPLIED PHYSICS LETTERS, 71, DOI: 10.1063/1.119740

156. Equivalent circuit analysis of a PbS/ferroelectric heterostructure
Authors: Pintilie, L; Pintilie, I; Botila, T; Petre, D; Licea, I

Published: FEB 1997, INFRARED PHYSICS & TECHNOLOGY, 38, DOI: 10.1016/S1350-4495(96)00026-6

157. Enhancement of the photoconductive properties of PbS films deposited on ferroelectric substrates
Authors: Pintilie, I; Pintilie, L; Pentia, E; Petre, D

Published: FEB 1997, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 44, DOI: 10.1016/S0921-5107(96)01729-1

158. Growth and properties of CdS thin films deposited from aqueous solutions, using different cadmium salts
Authors: Pintilie, L; Pentia, E; Pintilie, I; Petre, D

Published: FEB 1997, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 44, DOI: 10.1016/S0921-5107(96)01728-X

159. Thermally stimulated currents in PbTiO3 thin films
Authors: Pintilie, L; Alexe, M; Pintilie, I; Boierasu, I

Published: 1997, FERROELECTRICS, 201, DOI: 10.1080/00150199708228371

160. Temperature dependence of the pyroelectric voltage in a 2-2 connectivity pyroelectric bimorph
Authors: Pintilie, L; Pintilie, I

Published: 1997, FERROELECTRICS, 200, DOI: 10.1080/00150199708008608

161. Interface charge modulation in lead sulphide-ferroelectric ceramic heterostructures
Authors: Pintilie, I; Pintilie, L; Pentia, E; Botila, T; Ofrim, D

Published: OCT 1996, INFRARED PHYSICS & TECHNOLOGY, 37, DOI: 10.1016/S1350-4495(96)00004-7

162. Photovoltaic effect in PbS/PbTiO3/Si heterostructures
Authors: Pintilie, L; Alexe, M; Pintilie, I; Botila, T

Published: SEP 9 1996, APPLIED PHYSICS LETTERS, 69, DOI: 10.1063/1.117033

163. Photoelectric properties of PbTiO3/Si heterostructures
Authors: Alexe, M; Pintilie, L; Pintilie, I; Pignolet, A; Senz, S; Hesse, D

Published: 1996, FERROELECTRIC THIN FILMS V, 433, DOI: 10.1557/PROC-433-425

164. GROWTH AND CHARACTERIZATION OF PBS DEPOSITED ON FERROELECTRIC CERAMICS
Authors: PINTILIE, I; PENTIA, E; PINTILIE, L; PETRE, D; CONSTANTIN, C; BOTILA, T

Published: AUG 1 1995, JOURNAL OF APPLIED PHYSICS, 78, DOI: 10.1063/1.360269

165. INTERFACE TRAPPING STATES IN MISIM STRUCTURES, WITH ZNS-MN
Authors: PETRE, D; PINTILIE, I; CIUREA, ML; BOTILA, T

Published: MAY 1 1995, THIN SOLID FILMS, 260, DOI: 10.1016/0040-6090(94)06467-9

166. TRAPPING LEVELS IN BI12SIO20 CRYSTALS
Authors: PETRE, D; PINTILIE, I; BOTILA, T; CIUREA, ML

Published: AUG 15 1994, JOURNAL OF APPLIED PHYSICS, 76, DOI: 10.1063/1.357637

167. The Role of Interface Defect States in n- and p-Type Ge Metal-Ferroelectric-Semiconductor Structures with Hf0.5Zr0.5O2 Ferroelectric
Authors: Boni, GA; Istrate, CM; Zacharaki, C; Tsipas, P; Chaitoglou, S; Evangelou, EK; Dimoulas, A; Pintilie, I; Pintilie, L

Published: , PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2000500, DOI: 10.1002/pssa.202000500

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