Education
1982- PhD in Physics, Central Institute of Physics, Bucharest- Magurele
Positions
1972- present, positions in NIMP
1990-present, Senior Researcher Ist degree
1990&1993- Associate Professor, Bucharest University, Faculty of Physics
1992&1996- Humboldt Research Fellowship (1992): solid state of physics, KFA Julich Germany
1996-2001- Head of laboratory of "Physics of Low Dimensional Systems"
2001-2014- Senior Researcher, Forschungszentrum Julich, Peter Grunberg Institut, Nanoelectronics Institute, PGI-9, Juelich, Germany
2015-present- Senior Researcher, NIMP
Awards
- member Humboldt Foundation Club
- Romanian Academy Prize for Physics, "Constantin Miculescu" 1993 for studies on quantum SiGe structures
Research interests
Research contributions on topics of:
- Physics and application of amorphous semiconductors: transport, optical absorption, field and surface effect, termostimulated depolarization, photoelectric and photovoltaic properties, amorphous chalcogenide EPROM memories, a-Si:H solar cells.
- Theoretical investigation of the injection phenomena in high resistivity semiconductors, relaxation semiconductors; Modeling of electronic transport, electronic state distribution, optical transmission and ellipsometric investigations; Quantum effects in low dimensional structures, DBRT structures;
- LPCVD selective epitaxy, growth, plastic and elastic relaxation of the strain, photoelectrical properties of SiGe epitaxial layers, SiGe and Ge islands LEDs, formation and ordering of Ge islands, ordered Ge dots in SiO2 for floating gate memories;
- Self-assembling of GaN and InN nanowires grown by MBE, morphological, optical and electro-optical properties of III-nitride nanowires.
- Studies of sol-gel derived oxides and bioactive films.
Expertize
- Electric, photoelectric and optical investigations of semiconductor layers and devices
- LPCVD Epitaxial growth of Si and SiGe structures
- MBE growth studies of GaN-InN nanowires and their properties
- AFM, SEM, UV-VIS-IR photoluminescence, Raman, single nanodevices measurements
Books
- C. Popescu, T. Stoica, chapter: 2B, "Photoresistive sensors with amorphous thin films", pgs. 37-112, in "Thin film resistive sensors", editors P. Ciureanu and S. Middelhoek, Institute of Physics Publishing Bristol Philadelphia, 1992, ISBN: 0750301732
- L. Vescan, T. Stoica, E. Sutter, chapter: "Structural and luminescence properties of order Ge islands on patterned substrates", pgs. 543-567, in "Lateral alignment of epitaxial quantum dots", Editor O. G. Schmidt, Springer Series on Nanoscience and Technology, 2007, ISBN: 978-3-540-46935-3
- T. Stoica, E. Sutter, R. Calarco, chapter "GaN and InN nanowires: grown and optoelectronic properties", pgs. 73-96, in "Trends in Nanophysics Theory, Experiment and Tehnology", Editors: A. Aldea, V. Barsan, Springer 2010, ISBN: 978-3-642-12069-5
- A. Haab, M. Mikulisc, T. Stoica, B. Kardynal, A. Winden, H. Hardtdegen, D. Grutzmachet, E. Sutter, chapter IV- Physics Frontiers: "An alternative path for the fabrication of self-assembled III-nitride nanowires", pgs. 340-350, in "Future Trends in Microelectronics: Frontiers and Innovations", Edited by S. Luryi, J. Xu, A. Zaslavsky, Wiley-IEEE Press., ISBN: 978-1-118-44216-6
Patents
- OSIM patent application no. A/00193 (Publ. date 04-22-2021), "Film de GeSi-HfO2 nanostructurat fotosensibil in domeniul fereastra de lungimi de unda 1200...1600 nm", C. Palade, I. Stavarache, A. Slav, A.-M. Lepadatu, I. Dascalescu, T. Stoica, M.-L. Ciurea
- OSIM patent application no. A/00193 (Publ. date 04-22-2021), "Film de SiGeSn nanocristalin fotosensibil in VIS-SWIR si procedeu de realizare a acestuia", M.-L. Ciurea, I. Stavarache, A.-M. Lepadatu, S. Lazanu, T. Stoica
- OSIM patent application no. RO133299-A0 (Publ. date 04-30-2019), "Structura pe baza de nanocristale de GeSi in TiO2 pentru fotodetectori in VIS-NIR si procedeu de realizare a acesteia", M.-L. Ciurea, A. Slav, C. Palade, S. Lazanu, A.-M. Lepadatu, T. Stoica
- OSIM patent application no. RO133300-A0 (Publ. date 04-30-2019), "Structura fotosensibila in domeniul SWIR, pe baza de nanocristale de Germaniu aliat cu Staniu si procedeu de realizare a acesteia" , T. Stoica, M. Braic, A. Slav, A. E. Kiss, C. Palade, S. Lazanu, A.-M. Lepadatu, M.-L. Ciurea
- OSIM patent application no. RO133227-A0 (Publ. date 03-29-2019), T. Stoica, C. Palade, A. Slav, A.-M. Lepadatu
- OSIM patent no. RO83541-A (Publ. date 05-30-1984), "Amorphous silicon solar element- consist of quasi-intrinsic semiconductor and insulated layers with transparent or metallic electrodes", T. Stoica, C. Popescu, R. C. Ionescu, A. Dragomir, T. F. Stoica, M. M. Lazarescu, G. Codreanu, N. Munteanu, A. Serpescu
- OSIM patent no. RO83540-A (Publ. date 05-30-1984), "Amorphous silicon alloy has stepped conductivity deposit produced by luminescent discharge with supplementary nitrogen addn.", C. Popescu, T. Stoica, R. C. Ionescu, A. Dragomir, M. M. Lazarescu, T. F. Stoica, A. Nendiu, G. Codreanu, N. Munteanu, A. Serpescu
Projects
1. Multifunctional optoelectrical sensor based on two-dimensional MoS2 atomically thin layers grown by selective nucleation
Project Type: PED, Start Date: 2022-06-24 End Date: 2024-07-31
2. Nano-Structured GeSn Coatings for Photonics – GESNAPHOTO_M-ERA.NET project
Project Type: M-ERA.NET, Start Date: 2016-09-01 End Date: 2019-08-31
3. Photo-Electric Capacitor Memory based on Ge-Nanocrystals
Project Type: PED, Start Date: 2017-03-01 End Date: 2018-02-07
Publications
1. Annealing Effects on the Charging-Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures
Published: 2024 JAN 17 2024, ACS APPLIED ELECTRONIC MATERIALS, DOI: 10.1021/acsaelm.3c01454
2. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
Published: 2024 MAR 4 2024, JOURNAL OF PHYSICAL CHEMISTRY C, DOI: 10.1021/acs.jpcc.3c06996
3. Enhancing SiGeSn nanocrystals SWIR photosensing by high passivation in nanocrystalline HfO2 matrix
Published: FEB 12 2024, SCIENTIFIC REPORTS, 14, 3532, DOI: 10.1038/s41598-024-53845-z
4. Atomically Thin MoS2 Layers Selectively Grown on Mo Patterned Substrates for Field-Effect-Controlled Photosensors
Published: FEB 28 2024, ACS APPLIED NANO MATERIALS, 7, DOI: 10.1021/acsanm.3c05809
5. Annealing Effects on the Charging-Discharging Mechanism in Trilayer Al2O3/Ge/Al2O3 Memory Structures
Published: JAN 17 2024, ACS APPLIED ELECTRONIC MATERIALS, 6, DOI: 10.1021/acsaelm.3c01454
6. Enhancing Short-Wave Infrared Photosensitivity of SiGe Nanocrystals-Based Films through Embedding Matrix-Induced Passivation, Stress, and Nanocrystallization
Published: MAR 4 2024, JOURNAL OF PHYSICAL CHEMISTRY C, 128, DOI: 10.1021/acs.jpcc.3c06996
7. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
Published: MAR 2022, COATINGS, 12, 348, DOI: 10.3390/coatings12030348
8. Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
Published: JUN 30 2021, SCIENTIFIC REPORTS, 11, DOI: 10.1038/s41598-021-92936-z
9. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, 12366, DOI: 10.1039/d1tc02921e
10. Thermoelectric Efficiency of Epitaxial GeSn Alloys for Integrated Si-Based Applications: Assessing the Lattice Thermal Conductivity by Raman Thermometry
Published: JUL 26 2021, ACS APPLIED ENERGY MATERIALS, 4, 7392, DOI: 10.1021/acsaem.1c01576
11. Effects of Ge-related storage centers formation in Al2O3 enhancing the performance of floating gate memories
Published: MAR 15 2021, APPLIED SURFACE SCIENCE, 542, DOI: 10.1016/j.apsusc.2020.148702
12. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared
Published: NOV 2021, MATERIALS, 14, DOI: 10.3390/ma14227040
13. GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
Published: DEC 16 2020, ACS APPLIED MATERIALS & INTERFACES, 12, 56171, DOI: 10.1021/acsami.0c15887
14. GeSi Nanocrystals Photo-Sensors for Optical Detection of Slippery Road Conditions Combining Two Classification Algorithms
Published: NOV 2020, SENSORS, 20, DOI: 10.3390/s20216395
15. Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
Published: JUL 29 2020, ACS APPLIED MATERIALS & INTERFACES, 12, 33886, DOI: 10.1021/acsami.0c06212
16. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, 25053, DOI: 10.1021/acs.jpcc.0c06290
17. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
Published: 2020, CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 238, DOI:
18. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
Published: JUN 2019, ACS APPLIED NANO MATERIALS, 2, +, DOI: 10.1021/acsanm.9b00571
19. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 40, DOI:
20. Enhanced photoconductivity of embedded SiGe nanoparticles by hydrogenation
Published: JUN 15 2019, APPLIED SURFACE SCIENCE, 479, 409, DOI: 10.1016/j.apsusc.2019.02.096
21. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Published: NOV 1 2019, NANOTECHNOLOGY, 30, DOI: 10.1088/1361-6528/ab352b
22. Enhanced photocurrent in GeSi NCs/TiO2 multilayers
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 76, DOI:
23. Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Published: MAR 20 2018, SCIENTIFIC REPORTS, 8, DOI: 10.1038/s41598-018-23316-3
24. Enhanced photocurrent in GeSi NCs / TiO2 multilayers
25. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Published: JAN 15 2018, APPLIED SURFACE SCIENCE, 428, 702, DOI: 10.1016/j.apsusc.2017.09.038
26. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
Published: NOV 19 2018, APPLIED PHYSICS LETTERS, 113, DOI: 10.1063/1.5039554
27. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:
28. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
Published: APR 28 2017, NANOTECHNOLOGY, 28, DOI: 10.1088/1361-6528/aa66b7
29. Short-wave infrared LEDs from GeSn/SiGeSn multiple quantum wells
Published: FEB 20 2017, OPTICA, 4, 188, DOI: 10.1364/OPTICA.4.000185
30. Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 90, DOI:
31. Photosensitive GeSi/TiO2 multilayers in VIS-NIR
Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 70, DOI:
32. Vapor transport growth of MoS2 nucleated on SiO2 patterns and graphene flakes
Published: NOV 2016, NANO RESEARCH, 9, 3514, DOI: 10.1007/s12274-016-1227-2
33. Optically Pumped GeSn Microdisk Lasers on Si
Published: JUL 2016, ACS PHOTONICS, 3, 1285, DOI: 10.1021/acsphotonics.6b00258
34. Dense, Regular GaAs Nanowire Arrays by Catalyst-Free Vapor Phase Epitaxy for Light Harvesting
Published: AUG 31 2016, ACS APPLIED MATERIALS & INTERFACES, 8, 22492, DOI: 10.1021/acsami.6b05581
35. Study of GeSn based heterostructures: towards optimized group IV MQW LEDs
Published: JAN 25 2016, OPTICS EXPRESS, 24, 1367, DOI: 10.1364/OE.24.001358
36. Direct bandgap GeSn light emitting diodes for short-wave infrared applications grown on Si
Published: 2016, SILICON PHOTONICS XI, 9752, DOI: 10.1117/12.2211641
37. Direct Bandgap Group IV Epitaxy on Si for Laser Applications
Published: JUL 14 2015, CHEMISTRY OF MATERIALS, 27, 4702, DOI: 10.1021/acs.chemmater.5b01327
38. Optical Transitions in Direct-Bandgap Ge1-xSnx Alloys
Published: NOV 2015, ACS PHOTONICS, 2, 1545, DOI: 10.1021/acsphotonics.5b00372
39. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2
Published: NOV 15 2013, APPLIED SURFACE SCIENCE, 285, 179, DOI: 10.1016/j.apsusc.2013.08.031
40. Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion-crystallization process
Published: SEP 15 2013, JOURNAL OF NANOPARTICLE RESEARCH, 15, DOI: 10.1007/s11051-013-1981-y
41. Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
Published: JAN 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 232, DOI: 10.1007/s11051-010-0021-4
42. STUDY OF Ge NANOPARTICLES EMBEDDED IN AN AMORPHOUS SiO2 MATRIX WITH PHOTOCONDUCTIVE PROPERTIES
Published: JAN-MAR 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 73, DOI:
43. COLUMN STUDY OF CADMIUM ADSORPTION ONTO POLYACRYLONITRILE/HYDROXYAPATITE COMPOSITE BEAD
Published: AUG 2010, REVUE ROUMAINE DE CHIMIE, 55, 447, DOI:
44. INFLUENCE OF PREPARATION METHOD ON STRUCTURAL PROPERTIES OF GeSiO NANOSYSTEMS
Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 80, DOI: 10.1109/SMICND.2010.5650255
45. THE SIMULATION IN THE REAL CONDITIONS OF ANTIBACTERIAL ACTIVITY OF TiO2 (Fe) FILMS WITH OPTIMIZED MORPHOLOGY
Published: 2009, NANOSTRUCTURED MATERIALS AND NANOTECHNOLOGY II, 29, +, DOI:
46. STRUCTURAL AND OPTICAL PROPERTIES OF SOL-GEL DERIVED HYDROXYAPATITE FILMS IN DIFFERENT STAGES OF CRYSTALLIZATION AND DENSIFICATION PROCESSES
Published: 2009, NANOSTRUCTURED MATERIALS AND NANOTECHNOLOGY II, 29, +, DOI:
47. Atomic force microscopy study of TiO2 sol-gel films thermally treated under NH3 atmosphere
Published: OCT 1 2009, THIN SOLID FILMS, 517, 6247, DOI: 10.1016/j.tsf.2009.02.070
48. Investigation on the nitrogen doping of multilayered, porous TiO2 thin films
Published: SEP 30 2008, THIN SOLID FILMS, 516, 8189, DOI: 10.1016/j.tsf.2008.04.027
49. Hydroxyapatite films obtained by sol-gel and sputtering
Published: SEP 30 2008, THIN SOLID FILMS, 516, 8116, DOI: 10.1016/j.tsf.2008.04.071
50. Doped sol-gel TiO2 films for biological applications
Published: MAY 20 2008, BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 29, 1042, DOI:
51. Ge dots embedded in silicon dioxide using sol-gel deposition
Published: OCT 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 3274, DOI:
52. Growth and characterization of high density stoichiometric SiO2 dot arrays on Si through an anodic porous alumina template
Published: MAY 14 2006, NANOTECHNOLOGY, 17, 2151, DOI: 10.1088/0957-4484/17/9/011
53. Properties of high-porosity sol-gel derived indium-tin oxide films
Published: OCT 2005, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 7, 2358, DOI:
54. Piezoresponse force microscopy for imaging of GaN surfaces
Published: APR 2005, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 202, 789, DOI: 10.1002/pssa.200461298
55. Spectroellipsometric study of the sol-gel nanocrystalline ITO multilayer films
Published: MAY 1 2004, THIN SOLID FILMS, 455, 512, DOI: 10.1016/j.tsf.2003.11.251
56. Absence of island-island interaction during formation of isolated Ge islands in small windows
Published: JUN 15 2004, JOURNAL OF APPLIED PHYSICS, 95, 7711, DOI: 10.1063/1.1736312
57. Two-dimensional arrays of nanometre scale holes and nano-V-grooves in oxidized Si wafers for the selective growth of Ge dots or Ge/Si hetero-nanocrystals
Published: NOV 2004, NANOTECHNOLOGY, 15, 1700, DOI: 10.1088/0957-4484/15/11/056
58. Morphology, structure and optical properties of sol-gel ITO thin films
Published: AUG 15 2003, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 101, 226, DOI: 10.1016/S0921-5107(02)00667-0
59. Internal structure of the nanosized sol-gel ITO thin films
Published: 2001, 2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS, 66, DOI:
60. PbSe1-xTex thick thermoelectric films obtained by electrochemical deposition from aqueous solutions
Published: DEC 2001, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 3, 914, DOI:
61. Optical characterization of dielectric borophosphosilicate glass
Published: APR-MAY 2000, MICROELECTRONICS RELIABILITY, 40, 620, DOI: 10.1016/S0026-2714(99)00291-7
62. Size distribution and optical properties of self-assembled Ge on Si
Published: OCT 2000, APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 71, 432, DOI: 10.1007/s003390000555
63. Characterization of ITO thin films prepared by spinning deposition starting from a sol-gel process
Published: 2000, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2, 688, DOI:
64. Electrical and photovoltaic properties of photosensitised ITO/a-Si : H p-i-n/TPyP/Au cells
Published: MAY 15 2000, SOLAR ENERGY MATERIALS AND SOLAR CELLS, 62, 216, DOI: 10.1016/S0927-0248(99)00127-0
65. Room-temperature light-emitting diodes with Ge islands
Published: OCT-DEC 2000, MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3, 387, DOI: 10.1016/S1369-8001(00)00059-7
66. Size distribution and electroluminescence of self-assembled Ge dots
Published: MAY 15 2000, JOURNAL OF APPLIED PHYSICS, 87, 7282, DOI: 10.1063/1.372980
67. Influence of the mesa size on Ge island electroluminescence properties
Published: SEP 2000, SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15, 925, DOI: 10.1088/0268-1242/15/9/308
68. Colloidal sol-gel ITO films on tube grown silicon
Published: JUL 6 1999, THIN SOLID FILMS, 348, 278, DOI: 10.1016/S0040-6090(99)00136-4
69. Weak localization effects in ZnO surface wells
Published: AUG 15 1999, PHYSICAL REVIEW B, 60, 5838, DOI: 10.1103/PhysRevB.60.5832
70. Selective epitaxial growth of strained SiGe/Si for optoelectronic devices
Published: FEB 27 1998, MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 51, 169, DOI: 10.1016/S0921-5107(97)00253-5
71. Room-temperature SiGe light-emitting diodes
Published: DEC 1998, JOURNAL OF LUMINESCENCE, 80, 489, DOI: 10.1016/S0022-2313(98)00160-4
72. Electroluminescence of strained SiGe/Si selectively grown above the critical thickness for plastic relaxation
Published: MAR 15 1998, JOURNAL OF APPLIED PHYSICS, 83, 3373, DOI: 10.1063/1.367104
73. Physics of optimal resonant tunneling
Published: AUG 15 1997, PHYSICAL REVIEW B, 56, 3597, DOI: 10.1103/PhysRevB.56.3595
74. Amorphous rf-sputtered Si100-xNix thin films with O<=x<=15 at.%: Structural, optical and electrical properties
Published: JUN 1 1997, THIN SOLID FILMS, 301, 202, DOI: 10.1016/S0040-6090(97)00007-2
75. EFFECTS OF ANNEALING ON THE CONDUCTIVITY OF C-60 THIN-FILMS
Published: 1995, FULLERENE SCIENCE AND TECHNOLOGY, 3, 509, DOI: 10.1080/153638X9508543803
76. HIGH GAP SPUTTERED DLC LAYERS
Published: APR 1994, DIAMOND AND RELATED MATERIALS, 3, 816, DOI: 10.1016/0925-9635(94)90275-5
77. MAGNETOTRANSPORT AND PHOTOLUMINESCENCE OF 2-DIMENSIONAL HOLE GASES IN SI/SI1-XGEX/SI HETEROSTRUCTURES
Published: DEC 15 1994, PHYSICAL REVIEW B, 50, 18123, DOI: 10.1103/PhysRevB.50.18113
78. LINE-SHAPE MODEL FOR THE BROAD PHOTOLUMINESCENCE BAND FROM SI1-XGEX/SI HETEROSTRUCTURES
Published: DEC 15 1993, PHYSICAL REVIEW B, 48, 18279, DOI: 10.1103/PhysRevB.48.18276
79. MEYER-NELDEL CORRELATION IN SEMICONDUCTORS AND MOTT MINIMUM METALLIC CONDUCTIVITY
Published: DEC 15 1992, PHYSICAL REVIEW B, 46, 15071, DOI: 10.1103/PhysRevB.46.15063
80. GD AMORPHOUS-SILICON OBTAINED FROM TRICHLORSILANE
Published: DEC 1987, JOURNAL OF NON-CRYSTALLINE SOLIDS, 97-8, 1434, DOI: 10.1016/0022-3093(87)90343-7
81. AN EQUATION FOR THE CURRENT VOLTAGE CURVE OF THE A-SI-H SOLAR-CELLS
Published: JUN 16 1987, PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 101, 477, DOI: 10.1002/pssa.2211010219
82. EVALUATION OF THE OPTICAL-CONSTANTS AND THICKNESSES OF WEAKLY ABSORBING NONUNIFORM THIN-FILMS
Published: 1982, THIN SOLID FILMS, 97, 185, DOI: 10.1016/0040-6090(82)90226-7
83. LIGHT-INDUCED-CHANGES IN A-SI-H ANALYZED BY FIELD-EFFECT MEASUREMENTS
Published: 1981, JOURNAL DE PHYSIQUE, 42, 410, DOI: 10.1051/jphyscol:1981488
84. BULK BOUNDARY-CONDITIONS FOR INJECTION AND EXTRACTION IN TRAP-FREE LIFETIME AND RELAXATION SEMICONDUCTORS
Published: 1978, PHYSICAL REVIEW B, 17, 3983, DOI: 10.1103/PhysRevB.17.3972
85. PHOTOCONDUCTIVITY IN A-GESE
Published: 1978, PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 87, 246, DOI: 10.1002/pssb.2220870128
86. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e
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