National Institute Of Materials Physics - Romania

The thermodynamic and kinetic simulations based on the re-assessment of the thermodynamic and kinetic database of the Ni-Ti-Cu system were employed to predict the phenomena of mechanical alloying, spark plasma sintering and thermal properties of the intriguing Ni-Ti-Cu system. Thermodynamic calculations are presented for the stable and unstable phases of NiTiCu materials and support a correlation with the evolving microstructure during the technological process. Also, the thermal conductivity, the thermal diffusivity and the specific heat of spark plasma sintered and aged Cu-alloyed NiTi-based shape memory alloys (NiTiCu) with two compositions, Ni45Ti50Cu5 and Ni40Ti50Cu10, are evaluated and the influence of mechanical alloying and precipitates on thermal properties is discussed. Measurements of these thermal properties were carried out from 25 degrees C up to 175 degrees C using the laser flash method, as well as differential scanning calorimetry. The thermal hysteresis of the 20 mm diameter samples was between 8.8 and 24.5 degrees C. The observed T0 temperatures from DSC experimental transformation features are in reasonable accordance with the thermodynamic predictions. The determined k values are between 20.04 and 26.87 W/m K and in agreement with the literature results. Moreover, this paper can provide some suggestions for the preparation of NiTiCu shape memory alloys and their applications.

Pseudohexagonal Nb2O5 microcolumns spanning a size range of 50 to 610 nm were synthesized utilizing a cost-effective hydrothermal process (maintained at 180 degrees C for 30 min), followed by a subsequent calcination step at 500 degrees C for 3 h. Raman spectroscopy analysis unveiled three distinct reflection peaks at 220.04 cm(-1), 602.01 cm(-1), and 735.3 cm(-1), indicative of the pseudohexagonal crystal lattice of Nb2O5. The HRTEM characterization confirmed the inter-lattice distance of 1.8 & Aring; for the 110 plain and 3.17 & Aring; for the 100 plain. The conductometry sensors were fabricated by drop-casting a dispersion of Nb2O5 microcolumns, in ethanol, on Pt electrodes. The fabricated sensors exhibited excellent selectivity in detecting C2H5OH (Delta G/G = 2.51 for 10 ppm C2H5OH) when compared to a variety of tested gases, including CO, CO2, NO2, H-2, H2S, and C3H6O. The optimal operating temperature for this selective detection was determined to be 500 degrees C in a dry air environment. Moreover, the sensors demonstrated exceptional repeatability over the course of three testing cycles and displayed strong humidity resistance, even when exposed to 90% relative humidity. This excellent humidity resistance gas sensing property can be attributed to their nanoporous nature and elevated operating temperature.

Selective growth of 2D MoS2 layers on patterned substrates is highly desired for easy fabrication of devices. Selectively grown 2D MoS2 on Mo patterned substrates for the formation of intimate metallic contact was obtained by a Mo-CVD method in which MoO2 from an oxidized Mo pattern and S powder are the growth precursors. Mo films were deposited by magnetron sputtering on SiO2(300 nm)/c-Si substrates and patterned by photolithography techniques for obtaining Mo strips and finger contact structures, with the gap between the strips and finger varied from 5 to 20 mu m. The filling of the gap by selectively grown atomically thin MoS2 plates of 1-2 monolayers (MLs) was demonstrated by scanning electron microscopy and atomic force microscopy imaging. Field effect devices for the characterization of the photosensitivity of selectively grown MoS2 have been fabricated from finger contact structures. The dark current is drastically reduced from 10(-9) to 10(-13)-10(-14) A by varying the gate voltage from +7 to -7 V, showing the n-type semiconductor behavior of the selectively grown 2D MoS2. High photosensitivity of 10(5) (%) was obtained for 4.5 x 10(-4) mW/cm(2) at 650 nm wavelength illumination. The spectral responsivity reaches values of 15-25 A/W at 600 nm wavelength and shows an energy onset of 1.72-1.77 eV corresponding to about 2 ML MoS2. The carrier-trapping effect responsible for the slow part of the device response can be caused by structural defects and also by adsorbed molecules like in gas sensors.

Present work reports a systematic study on the evaluation of magnetic inhomogeneities in non-stoichiometric Mg0 & sdot;5Ca0 & sdot;5Fe2O4 nanoferrite (MCNF) by conducting exhaustive dc -magnetization, ac -susceptibility and Fe-57 Mossbauer spectroscopic measurements and exchange bias investigations using training protocol down to 6 K. Rietveld fitting to PXRD established the formation of anticipated spinel fcc phase of MCNF (non-stoichiometric) along with a minute impurity phase of calcite. Scherrer method and HRTEM micrographs illustrated broad size distribution of MCNF nanoparticles with an average nanocrystallite size of -15 nm. Combined 57Fe Mo center dot ssbauer spectroscopic and dc -magnetization analysis establishes coexistence of ferrimagnetic (67 %) & superparamagnetic (33 %) states at 300 K with notable M-s = 22 emu/g, M-r = 4 emu/g & H-c = 130 Oe and blocking of most of the nanoparticles of MCNF below 300 K. The coercivity followed the size -modified Kneller law for ferrimagnetic nanoparticles and the saturation magnetization abides the Bloch law. Moreover the frequencydependent ac -susceptibility investigations revealed two magnetic transitions: (i) A transition at - 330 K in the low frequency data attributed to the relaxation of blocked particles of bigger sizes under the superparamagnetic (SPM) regime and (ii) an irregularity at low temperatures is assigned to surface spin glass freezing. Surface spin glass freezing was further affirmed by the ageing experiments and dynamic scaling law. Furthermore, even the best fit to the dynamic scaling couldn't assert the existence of conventional spin glass phase due to slower spin -flip time of surface spins. A soft ferrimagnetic core of MCNF is enveloped with disordered surface spins, which manifest spin glass state. Concurrently, the findings of exchange bias at 30 K and training effect at 6 K affirmed that MCNF nanoparticles are presenting themselves as FM core- SG shell system. Our experimental findings suggested magnetic inhomogeneities comprised of superparamagnetism, ferrimagnetism and disordered surface spin glass state in the non-stoichiometric MCNF.

Bioactive glasses (BGs) are known for their selective ability to (i) form a mechanically strong interfacial bond with hard (bone) or soft tissues (gingivae or cartilages) (i.e., silica-, silica-phosphate-, phosphate-, boratephosphate-, or silica-phosphate-borate-based BGs); or (ii) serve as reservoirs for fast-release of therapeutic (osteogenic, angiogenic, anticarcinogenic, or antimicrobial) ions (i.e., phosphate-based BGs and mesoporous BGs). The strength of the bone bond yielded by the osteoproductive-capable BGs is generally equivalent to, or higher than the bone strength. The resorbability of phosphate-based BG is dependent on the content of network formers and cross-linkers. All BGs elicit excellent biochemical compatibility. However, their fracture toughness is typically less than and the elastic modulus is greater than those of bone, indicating that most BGs have suboptimal biomechanical compatibility when used in load-bearing applications. One promising approach to overcome this problem is the development of BGs in coating form, applied to the surface of load-bearing endosseous implants. This work critically assesses BG thin-layers fabricated by the radio-frequency magnetron sputtering method, an industry-ready large-scale physical vapour deposition technology. It is demonstrated that, despite the relative lack of attention paid to this technology, it enables the development of unique BG coatings with efficacious therapeutic capabilities. Here, we present an overview of the most relevant developments achieved thus far, along with the remarkable advantages, drawbacks to overcome, and future perspectives with the intention of highlighting the vast possibilities of this specific field of research.

In a milestone paper [F. D. M. Haldane, Phys. Rev. Lett. 61, 2015 (1988)], Haldane elaborated a model of graphene within the time -reversal symmetry breaking is achieved by next -nearest -neighbors imaginary counterrotating hopping, hence conferring topological properties. In recent years, the time -reversal symmetry turned out to be broken also by light irradiation in so-called Floquet topological insulators (FTIs). On the other hand, Kane and Mele introduced a spin -orbit coupling (SOC) model [C. L. Kane et al., Phys. Rev. Lett. 95, 226801 (2005)] inspired by the Haldane's mechanism. In this paper, we present the topological properties of a FTI possessing SOC, using graphene as the playground. It was found that the interplay between sublattice subspace and the spin one triggers interesting topological phase transitions. Basically, in a FTI with SOC, two topological phases may be excited: charge quantum Hall effect (CQHE) and, respectively, spin quantum Hall effect (SQHE) phases. Also, it was demonstrated that the CQHE and SQHE coexistence is forbidden by the topology of the system. As well, it was identified a special driving regime of spin filter (SF), in which only one spin state is topological and, consequently, will be filtered in quantum transport.

This work describes the development of a flexible uric acid (UA) biosensor based on palladium-coated submicrometer electrospun poly(methylmethacrylate) (PMMA) fibers metalized with gold and attached to polyethylene terephthalate substrate (Pd/Au/PMMA/PET). The morphological characterization conducted by scanning electron microscopy revealed nanoscale Pd dendritic structures. Electrochemical investigations in the absence and in the presence of redox probes demonstrated that these Pd nanostructures are responsible for a six-fold increase in the electroactive area and enhanced electron transfer kinetics when compared to the gold-coated electrospun fibers. The UA biosensor obtained by immobilizing the uricase enzyme (UrOx) onto the Pd/Au/PMMA/PET electrode surface, allowed UA detection with a sensitivity of 431 mu A cm(-2) mM(-1) and a limit of detection of 12 mu M. Investigation of the redox reactions of hydrogen peroxide (a product of the enzymatic oxidation of UA by UrOx) at the Pd/Au/PMMA/PET electrode demonstrated that the working principle of the biosensor is based on the reduction of PdO produced at the electrode surface during the spontaneous reduction of hydrogen peroxide on Pd. This allows a biosensor operating potential of -0.05 V (vs Ag/AgCl) with high selectivity. The UrOx/Pd/Au/PMMA/PET biosensor was applied for UA detection in body fluids (sweat, urine, and blood serum) with recovery values between 98 and 105%, which were validated by high-performance liquid chromatography analysis. The stability of the device was evaluated over a period of 3 months, retaining 78% of the initial sensitivity, and reproducibility with RSD = 4.9% was achieved. The analytical performance of the biosensor under harsh mechanical deformations and at physiological temperatures demonstrated the potential applications of the device to wearable sensing platforms.

SiGeSn nanocrystals (NCs) in oxides are of considerable interest for photo-effect applications due to the fine-tuning of the optical bandgap by quantum confinement in NCs. We present a detailed study regarding the silicon germanium tin (SiGeSn) NCs embedded in a nanocrystalline hafnium oxide (HfO2) matrix fabricated by using magnetron co-sputtering deposition at room temperature and rapid thermal annealing (RTA). The NCs were formed at temperatures in the range of 500-800 degrees C. RTA was performed to obtain SiGeSn NCs with surfaces passivated by the embedding HfO2 matrix. The formation of NCs and beta-Sn segregation were discussed in relation to the deposition and processing conditions by employing HRTEM, XRD and Raman spectroscopy studies. The spectral photosensitivity exhibited up to 2000 nm in short-wavelength infrared (SWIR) depending on the Sn composition was obtained. Comparing to similar results on GeSn NCs in SiO2 matrix, the addition of Si offers a better thermal stability of SiGeSn NCs, while the use of HfO2 matrix results in better passivation of NCs increasing the SWIR photosensitivity at room temperature. These results suggest that SiGeSn NCs embedded in an HfO2 matrix are a promising material for SWIR optoelectronic devices.

In this work, we demonstrate, for the first time, that coupling together the pyroelectric effect, the photovoltaic effect and the plasmonic effect is a novel method to significantly enhance the performance of self-powered photodetectors in the visible region. Photodetectors based on tri-layered heterojunction of n-Si/p-SnO/n-ZnO through the inclusion of silver (Ag) nanoparticles (NPs) at the SnO/ZnO interface were fabricated. The photo-response of the device, with excitation from a chopped 650 nm wavelength laser, was carefully investigated, and it was shown that the photodetector performance is enhanced the most with the inclusion of spheroidal Ag NPs with similar to 70 nm diameter. The Al/Si/SnO/Ag NPs/ZnO/ITO device exhibited an optimum responsivity, detectivity and sensitivity of 210.2 mA W-1, 5.47 x 109 Jones and 15.0 x 104, respectively, together with a rise and fall time of 2.3 and 51.3 mu s, respectively, at a laser power density of 317 mW cm-2 and at a chopper frequency of 10 Hz. The present photodetectors are more than twice as responsive as the current best-performing ZnO-based pyro-phototronic photodetectors and they also exhibit other competitive features, such as detectivity, and fall and rise times. Therefore, by exploiting the plasmonic effect of the Ag NPs together with the pyroelectric effect in a ZnO film, and the photovoltaic effect at a Si/SnO junction, all in a single device, photodetectors were developed with state-of-the-art performance for the visible region. Coupling together the pyroelectric effect, the photovoltaic effect and the plasmonic effect is a novel method to significantly enhance the performance of self-powered photodetectors in the visible region.

Synapses play a vital role in information processing, learning, and memory formation in the brain. By emulating the behavior of biological synapses, electronic synaptic devices hold the promise of enabling high-performance, energy-efficient, and scalable neuromorphic computing. Ferroelectric memristive devices integrate the characteristics of both ferroelectric and memristive materials and present a far-reaching potential as artificial synapses. Here, it is reported on a new ferroelectric device on silicon, a field-effect memristor, consisting of an epitaxial ultrathin ferroelectric Hf(0.5)Z(r0.5)O(2) film sandwiched between an epitaxial highly doped oxide semiconductor SrTiO3-delta and a top metal. Upon a low voltage of less than 2 V, the field-effect modulation in the semiconductor enables to access multiple states. The device works in a large time domain ranging from milliseconds down to tens of nanoseconds. By gradually switching the polarization by identical pulses, the ferroelectric diode devices can dynamically adjust the synaptic strength to mimic short- and long-term memory plasticity. Ionic contributions due to redox processes in the oxide semiconductor beneficially influence the device operation and retention.