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Dr. Ana Maria Lepadatu

Scientific Researcher II

Laboratory of Atomic Structures and Defects in Advanced Materials (LASDAM)

lepadatu[AT]infim[DOT]ro

Education

2012

PhD in Physics

 

Faculty of Physics / University of Bucharest / Romania

 

PhD Superviser Prof. Magdalena Lidia Ciurea (https://www.brainmap.ro/lidia-magdalena-ciurea)

 

Thesis “Study of the electrical properties of some nanostructures based on group IV elements”

 

2010

                         

Master - Physics of Polymers and Technology of Materials

Faculty of Physics / University of Bucharest / Romania

Positions

2020–

Senior Researcher rank 2 and

2016–

                         

Group leader -https://infim.ro/lab30/2020/12/09/group-of-nanomaterials-and-nanostructures-based-on-sigesn/

Group of “Nanomaterials and Nanostructures based on SiGeSn” (shortly called SiGeSn Group)/ Laboratory 30 “Nanoscale Condensed Matter” /National Institute of Materials Physics (NIMP) / Romania

 

2016–2020

                   

Senior Researcher rank 3

Group of “Nanomaterials and Nanostructures based on SiGeSn” Laboratory 30 “Nanoscale Condensed Matter” / NIMP

 

2014–2016

Senior Researcher rank 3

“Si- and Ge-based Nanomaterials and Nanostructures” Team Laboratory 30 “Nanoscale Condensed Matter” / NIMP

 

2011–2014

                       

Researcher

“Si- and Ge-based Nanomaterials and Nanostructures” Team Laboratory 30 “Nanoscale Condensed Matter” / NIMP

 

2008–2011

Assistant Researcher in NIMP, Group of “Silicon-Based Micro- and Nanosystems”

2006–2008

Technician (being student) in NIMP, Group of “Silicon-Based Micro- and Nanosystems”

Awards

2013

Radu Grigorovici” Award of the Romanian Academy

 

2019

Diploma of Excellence & ProInvent Medal - ProInvent (International Exhibition of Research, Innovations and Inventions), XVIIth edition, Cluj-Napoca 2019

 

2013

                         

Best Poster presented during E-MRS 2013 Spring Meeting (Strasbourg, France), Symposium J Prize for early career researchers presenting their work at conf.

 

2018, 2017

2016, 2013

2011, 2009

 

Best Paper Awards at IEEE International Semiconductor Conference) CAS 2018, 2017, 2016, 2013, 2011, 2009 editions (from which 4 awards for papers presented by Dr. Lepadatu)

 

2019

Diploma of Excellence - EuroInvent (European Exhibition of Creativity and Innovation), 11th edition, Iasi 2019

Research interests

Field of nanostructured materials based on Si-Ge-Sn, i.e. alloy SiGeSn, SiGe, GeSn, Ge, Si nanocrystals/ quantum dots/ nanoparticles (NCs/QDs/NPs) embedded in oxides (HfO2, TiO2, SiO2): #preparation; #characterization correlated with structure and morphology: charge storage, electrical transport, phototransport; #modeling; #quantum confinement (QC) effects and contribution of localized states (LSs);#applications - nonvolatile memories and optical sensors with Ge, SiGe NCs in oxides;

Structures based on ferroelectric HfO2: #preparation; #characterization (CV, PV, PFM) correlated with structure and morphology (GI-XRD, Raman, TEM)

Trapping processes in monocrystals and multilayered nanostructures based on Si; #Nanoscale strain and changes induced in electrical parameters

Expertize

Magnetron sputtering deposition, nanostructuring by thermal annealing (thin films, multilayered structures)

 

Characterization: ●electrical properties (IV, IT), ●memory properties (CV loops, Ct retention), ●phototransport (Iphλ, IphV), ●ferroelectric properties (P – V hysteresis loops), ●Raman spectroscopy, ●photoluminescence

 

Modeling: ●electrical transport mechanisms in nanostructures with Ge NCs/NPs in oxides: tunneling, hopping; ●charge storage mechanisms; ●electrical behavior of films of Si QDs in SiO2: percolation processes, electrical transitions between QC energy levels; ●energy structure (QC energy levels/quasibands) of QDs with different shapes, embedded in amorphous matrix; ●spectral quantum efficiency of light absorption on QC levels and absorption threshold in QDs; ●Raman (phonon QC in NCs, composition and strain effects) and photoluminescence spectra (recombination on QC levels in NCs)

Books

1.  Chapter “Electrical Characterization Techniques for Porous Silicon” (pp. 655-672, vol. 1), M.L. Ciurea, A.M. Lepadatu in Handbook of Porous Silicon, 2nd edition, edited by L. Canham, Springer International Publishing AG, Cham (2018)

2. Chapter 3 “GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method” (pp. 47-73), M.L. Ciurea, V.S. Teodorescu, I. Stavarache, A.M. Lepadatu in Size Effects in Nanostructures, Basics and Applications, Springer Ser. Materials, Vol. 205, Eds. V. Kuncser and L. Miu, Springer-Verlag Berlin Heidelberg (2014)

3. Chapter 3 “Quantum Well Solar Cells- Physics, Materials and Technology” (pp. 33-47), M.L. Ciurea, A.M. Lepadatu, I. Stavarache in Advanced Solar Cell Materials, Technology, Modeling and Simulation, Eds. L. Fara and M. Yamaguchi, IGI Global, Hershey PA (2013)

4. “Ge nanodots embedded in a silica matrix” (pp. 193-212), I. Stavarache, A.M. Lepadatu, M.L. Ciurea in Nanomaterials and Nanostructures for Various Applications, Series in Micro and Nanoengineering, Vol. 19, Eds. G. Brezeanu, H. Iovu, C. Cobianu and D. Dascalu, The Publishing House of the Romanian Academy, Bucharest (2012)

5. “Modelling internal quantum efficiency for quantum dots in photovoltaic cells” (pp. 11-22), V. Iancu, M.R. Mitroi, A.M. Lepadatu, I. Stavarache, M.L. Ciurea in Nanostructuring and Nanocharacterization, Series in Micro and Nanoengineering, Vol. 16, Eds. M. Zaharescu, M. Ciurea, I. Kleps and D. Dascalu, The Publishing House of the Romanian Academy, Bucharest (2010)

Patents

1.       OSIM patent no. RO131968-B1 (Publ. date May 30, 2018), “Matrice capacitiva pentru memorie nevolatila si procedeu de realizare a acesteia”, A. Slav, C. Palade, A.-M. Lepadatu, S. Lazanu, L.M. Ciurea, D. Vasilache, M. Dragoman

2.      OSIM patent application filled in 2021 (A/00193 Apr 22, 2021), “Film de GeSi-HfO2 nanostructurat fotosensibil in domeniul fereastra de lungimi de unda 1200…1600 nm”, C. Palade, I. Stavarache, A. Slav, A.M. Lepadatu, I. Dascalescu, T. Stoica, M.L. Ciurea

3.      OSIM patent application no. RO134049-A0 (Publ. date Apr 30, 2020), “Film de SiGeSn nanocristalin fotosensibil in VIS-SWIR si procedeu de realizare a acestuia”, M.L. Ciurea, I. Stavarache, A.M. Lepadatu, S. Lazanu, T. Stoica

4.      OSIM patent application no. RO133300-A0 (Publ. date Apr 30, 2019), “Structura fotosensibila in domeniul SWIR pe baza de nanocristale de germaniu aliat cu staniu, si procedeu de realizare a acesteia”, T. Stoica, M. Braic, A. Slav, A.E. Kiss, C. Palade, S. Lazanu, A.M. Lepadatu, M.L. Ciurea

5.      OSIM patent application no. RO133299-A0 (Publ. date Apr 30, 2019), “Structura pe baza de nanocristale de GeSi in TiO2 pentru fotodetectori in VIS-NIR si procedeu de realizare a acesteia”, M.L. Ciurea, A. Slav, C. Palade, S. Lazanu, A.M. Lepadatu, T. Stoica

6.      OSIM patent application no. RO133227-A0 (Publ. date Mar 29, 2019), “Structura de memorie optoelectrica cu poarta flotanta, din nanocristale de germaniu, si procedeu de realizare a acesteia”, T. Stoica, C. Palade, A. Slav, A. Lepadatu

7.       OSIM patent application no. RO132946-A0 (Publ. date Nov 29, 2018), “Structura de dozimetru pe baza de capacitor MOS cu poarta flotanta din nanocristale de germaniu, si procedeu de realizare a acesteia”, S. Lazanu, C. Palade, A.M. Lepadatu, I. Stavarache, M.L. Ciurea

Projects

1. SiGeSn nanocrystals with charge storage properties at nanoscale – SIGESNANOMEM

Project Type: TE, Start Date: 2019-05-01 End Date: 2021-04-30

Publications

1. SiGeSn Quantum Dots in HfO2 for Floating Gate Memory Capacitors
Authors: Palade, C; Slav, A; Cojocaru, O; Teodorescu, VS; Stoica, T; Ciurea, ML; Lepadatu, AM

Published: MAR 2022, COATINGS, 12, 348, DOI: 10.3390/coatings12030348

2. Bandgap atomistic calculations on hydrogen-passivated GeSi nanocrystals
Authors: Cojocaru, O; Lepadatu, AM; Nemnes, GA; Stoica, T; Ciurea, ML

Published: JUN 30 2021, SCIENTIFIC REPORTS, 11, DOI: 10.1038/s41598-021-92936-z

3. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: SEP 28 2021, JOURNAL OF MATERIALS CHEMISTRY C, 9, 12366, DOI: 10.1039/d1tc02921e

4. Nanocrystallized Ge-Rich SiGe-HfO2 Highly Photosensitive in Short-Wave Infrared
Authors: Palade, C; Lepadatu, AM; Slav, A; Teodorescu, VS; Stoica, T; Ciurea, ML; Ursutiu, D; Samoila, C

Published: NOV 2021, MATERIALS, 14, DOI: 10.3390/ma14227040

5. GeSn/SiO2 Multilayers by Magnetron Sputtering Deposition for Short-Wave Infrared Photonics
Authors: Slav, A; Dascalescu, I; Lepadatu, AM; Palade, C; Zoita, NC; Stroescu, H; Iftimie, S; Lazanu, S; Gartner, M; Buca, D; Teodorescu, VS; Ciurea, ML; Braic, M; Stoica, T

Published: DEC 16 2020, ACS APPLIED MATERIALS & INTERFACES, 12, 56171, DOI: 10.1021/acsami.0c15887

6. Epitaxial GeSn Obtained by High Power Impulse Magnetron Sputtering and the Heterojunction with Embedded GeSn Nanocrystals for Shortwave Infrared Detection
Authors: Dascalescu, I; Zoita, NC; Slav, A; Matei, E; Iftimie, S; Comanescu, F; Lepadatu, AM; Palade, C; Lazanu, S; Buca, D; Teodorescu, VS; Ciurea, ML; Braic, M; Stoica, T

Published: JUL 29 2020, ACS APPLIED MATERIALS & INTERFACES, 12, 33886, DOI: 10.1021/acsami.0c06212

7. Influence of SiGe Nanocrystallization on Short-Wave Infrared Sensitivity of SiGe-TiO2 Films and Multilayers
Authors: Lepadatu, AM; Palade, C; Slav, A; Cojocaru, O; Maraloiu, VA; Iftimie, S; Comanescu, F; Dinescu, A; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: NOV 12 2020, JOURNAL OF PHYSICAL CHEMISTRY C, 124, 25053, DOI: 10.1021/acs.jpcc.0c06290

8. SWIR photoresponse of SiGe/TiO2 multilayers with Ge-rich SiGe nanocrystals
Authors: Lepadatu, AM; Palade, C; Slav, A; Dascalescu, I; Cojocaru, O; Iftimie, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: 2020, CAS 2020 PROCEEDINGS: 2020 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 238, DOI:

9. GeSn Nanocrystals in GeSnSiO2 by Magnetron Sputtering for Short-Wave Infrared Detection
Authors: Slav, A; Palade, C; Logofatu, C; Dascalescu, I; Lepadatu, AM; Stavarache, I; Comanescu, F; Iftimie, S; Antohe, S; Lazanu, S; Teodorescu, VS; Buca, D; Ciurea, ML; Braic, M; Stoica, T

Published: JUN 2019, ACS APPLIED NANO MATERIALS, 2, +, DOI: 10.1021/acsanm.9b00571

10. Controlling SWIR photosensitivity limit by composition engineering: from Ge to GeSi nanocrystals embedded in TiO2
Authors: Dascalescu, I; Cojocaru, O; Lalau, I; Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Ciurea, ML

Published: 2019, 2019 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2019), 42ND EDITION, 40, DOI:

11. Orthorhombic HfO2 with embedded Ge nanoparticles in nonvolatile memories used for the detection of ionizing radiation
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Maraloiu, AV; Negrila, C; Logofatu, C; Stoica, T; Teodorescu, VS; Ciurea, ML; Lazanu, S

Published: NOV 1 2019, NANOTECHNOLOGY, 30, DOI: 10.1088/1361-6528/ab352b

12. Dense Ge nanocrystals embedded in TiO2 with exponentially increased photoconduction by field effect
Authors: Lepadatu, AM; Slav, A; Palade, C; Dascalescu, I; Enculescu, M; Iftimie, S; Lazanu, S; Teodorescul, VS; Ciurea, ML; Stoica, T

Published: MAR 20 2018, SCIENTIFIC REPORTS, 8, DOI: 10.1038/s41598-018-23316-3

13. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2
Authors: Palade, C; Lepadatu, AM; Slav, A; Lazanu, S; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: JAN 15 2018, APPLIED SURFACE SCIENCE, 428, 702, DOI: 10.1016/j.apsusc.2017.09.038

14. Optoelectric charging-discharging of Ge nanocrystals in floating gate memory
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Dascalescu, I; Iftimie, S; Lazanu, S; Ciurea, ML; Stoica, T

Published: NOV 19 2018, APPLIED PHYSICS LETTERS, 113, DOI: 10.1063/1.5039554

15. MOS DOSIMETER BASED ON Ge NANOCRYSTALS IN HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Stavarache, I; Dascalescu, I; Cojocaru, O; Stoica, T; Ciurea, ML; Lazanu, S

Published: 2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 90, DOI:

16. Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors
Authors: Lepadatu, AM; Palade, C; Slav, A; Maraloiu, AV; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, VS; Ciurea, ML

Published: APR 28 2017, NANOTECHNOLOGY, 28, DOI: 10.1088/1361-6528/aa66b7

17. Isotactic polypropylene-vapor grown carbon nanofibers composites: Electrical properties
Authors: Aldica, GV; Ciurea, ML; Chipara, DM; Lepadatu, AM; Lozano, K; Stavarache, I; Popa, S; Chipara, M

Published: OCT 10 2017, JOURNAL OF APPLIED POLYMER SCIENCE, 134, DOI: 10.1002/APP.45297

18. Light illumination effects on floating gate memory with Ge nanocrystals in HfO2
Authors: Palade, C; Slav, A; Lepadatu, AM; Lazanu, S; Ciurea, ML; Stoica, T

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 90, DOI:

19. Photosensitive GeSi/TiO2 multilayers in VIS-NIR
Authors: Palade, C; Dascalescu, I; Slav, A; Lepadatu, AM; Lazanu, S; Stoica, T; Teodorescu, VS; Ciurea, ML; Comanescu, F; Muller, R; Dinescu, A; Enuica, A

Published: 2017, 2017 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 40TH EDITION, 70, DOI:

20. Correlation between strain and defects in Bi implanted Si
Authors: Palade, C; Lepadatu, AM; Slav, A; Ciurea, ML; Lazanu, S

Published: JUN 2016, JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 93, 32, DOI: 10.1016/j.jpcs.2016.02.005

21. Non-volatile memory devices based on Ge nanocrystals
Authors: Vasilache, D; Cismaru, A; Dragoman, M; Stavarache, I; Palade, C; Lepadatu, AM; Ciurea, ML

Published: FEB 2016, PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 213, 259, DOI: 10.1002/pssa.201532376

22. MEMORY PROPERTIES OF GE NANOCRYSTALS-BASED CAPACITORS WITH DIFFERENT COMPOSITION OF INTERMEDIATE LAYER
Authors: Lepadatu, AM

Published: OCT-DEC 2016, PROCEEDINGS OF THE ROMANIAN ACADEMY SERIES A-MATHEMATICS PHYSICS TECHNICAL SCIENCES INFORMATION SCIENCE, 17, 327, DOI:

23. How morphology determines the charge storage properties of Ge nanocrystals in HfO2
Authors: Slav, A; Palade, C; Lepadatu, AM; Ciurea, ML; Teodorescu, VS; Lazanu, S; Maraloiu, AV; Logofatu, C; Braic, M; Kiss, A

Published: MAR 1 2016, SCRIPTA MATERIALIA, 113, 138, DOI: 10.1016/j.scriptamat.2015.10.028

24. Non-volatile memory structures with Ge NCs-HfO2 intermediate layer
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Lazanu, S; Logofatu, C; Teodorescu, VS; Ciurea, ML

Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 166, DOI:

25. Fast atomic diffusion in amorphous films induced by laser pulse annealing
Authors: Teodorescu, VS; Ghica, C; Maraloiu, AV; Kuncser, A; Lepadatu, AM; Stavarache, I; Ciurea, ML; Scarisoreanu, ND; Andrei, A; Dinescu, M

Published: 2016, 2016 39TH INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 158, DOI:

26. HfO2 with embedded Ge nanocrystals with memory effects
Authors: Palade, C; Slav, A; Lepadatu, AM; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 48, DOI:

27. Nanostructuring of GeTiO amorphous films by pulsed laser irradiation
Authors: Teodorescu, VS; Ghica, C; Maraloiu, AV; Vlaicu, M; Kuncser, A; Ciurea, ML; Stavarache, I; Lepadatu, AM; Scarisoreanu, ND; Andrei, A; Ion, V; Dinescu, M

Published: APR 7 2015, BEILSTEIN JOURNAL OF NANOTECHNOLOGY, 6, 900, DOI: 10.3762/bjnano.6.92

28. Tuning the properties of Ge and Si nanocrystals based structures by tailoring the preparation conditions Review
Authors: Ciurea, ML; Lepadatu, AM

Published: JAN-MAR 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 87, DOI:

29. STRAIN DRIVEN CHANGES OF DEFECT PARAMETERS IN HEAVY ION IMPLANTED Si
Authors: Palade, C; Lepadatu, AM; Slav, A; Ciurea, ML; Lazanu, S

Published: OCT-DEC 2015, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 10, 1381, DOI:

30. Influence of strain field on nanoscale electronic processes in silicon-based semiconductors
Authors: Lepadatu, AM; Palade, C; Slav, A; Lazanu, S

Published: 2015, 2015 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 44, DOI:

31. Transition in conduction mechanism in GeSi nanostructures
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 58, DOI:

32. Annealing induced changes in the structure, optical and electrical properties of GeTiO2 nanostructured films
Authors: Stavarache, I; Lepadatu, AM; Teodorescu, VS; Galca, AC; Ciurea, ML

Published: AUG 1 2014, APPLIED SURFACE SCIENCE, 309, 174, DOI: 10.1016/j.apsusc.2014.04.212

33. GeSiO Based Nanostructures: Electrical Behaviour Related to Morphology and Preparation Method
Authors: Ciurea, ML; Teodorescu, VS; Stavarache, I; Lepadatu, AM

Published: 2014, SIZE EFFECTS IN NANOSTRUCTURES: BASICS AND APPLICATIONS, 205, 73, DOI: 10.1007/978-3-662-44479-5_3

34. Electrical properties related to the structure of GeSi nanostructured films
Authors: Ciurea, ML; Stavarache, I; Lepadatu, AM; Pasuk, I; Teodorescu, VS

Published: JUL 2014, PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 251, 1346, DOI: 10.1002/pssb.201350112

35. Charge storage properties of HfO2/Ge-HfO2/SiO2 trilayer structures
Authors: Palade, C; Slav, A; Lepadatu, AM; Teodorescu, VS; Ciurea, ML

Published: 2014, 2014 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), 62, DOI:

36. TRANSMISSION ELECTRON MICROSCOPY STUDY OF Ge NANOPARTICLES FORMED IN GeSiO FILMS BY ANNEALING IN HYDROGEN
Authors: Teodorescu, VS; Maraloiu, AV; Stavarache, I; Lepadatu, AM; Ciurea, ML

Published: OCT-DEC 2013, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 8, 1780, DOI:

37. Quantum Well Solar Cells: Physics, Materials and Technology
Authors: Ciurea, ML; Lepadatu, AM; Stavarache, I

Published: 2013, ADVANCED SOLAR CELL MATERIALS, TECHNOLOGY, MODELING, AND SIMULATION, 47, DOI: 10.4018/978-1-4666-1927-2.ch003

38. Conduction mechanism versus annealing in SiO2 films with Ge nanoparticles
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Teodorescu, VS; Ciurea, ML

Published: 2013, 2013 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1-2, 34, DOI:

39. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2
Authors: Stavarache, I; Lepadatu, AM; Stoica, T; Ciurea, ML

Published: NOV 15 2013, APPLIED SURFACE SCIENCE, 285, 179, DOI: 10.1016/j.apsusc.2013.08.031

40. Dense Ge nanocrystal layers embedded in oxide obtained by controlling the diffusion-crystallization process
Authors: Lepadatu, AM; Stoica, T; Stavarache, I; Teodorescu, VS; Buca, D; Ciurea, ML

Published: SEP 15 2013, JOURNAL OF NANOPARTICLE RESEARCH, 15, DOI: 10.1007/s11051-013-1981-y

41. Structure and electrical transport in films of Ge nanoparticles embedded in SiO2 matrix
Authors: Stavarache, I; Lepadatu, AM; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: JUL 2012, JOURNAL OF NANOPARTICLE RESEARCH, 14, DOI: 10.1007/s11051-012-0930-5

42. IODINE IRRADIATION INDUCED DEFECTS IN CRYSTALLINE SILICON
Authors: Slav, A; Lepadatu, AM; Palade, C; Stavarache, I; Iordache, G; Ciurea, ML; Lazanu, S; Mitroi, MR

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 276, DOI:

43. TRANSPORT MECHANISMS IN SiO2 FILMS WITH EMBEDDED GERMANIUM NANOPARTICLES
Authors: Palade, C; Lepadatu, AM; Stavarache, I; Maraloiu, AV; Teodorescu, VS; Ciurea, ML

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 94, DOI:

44. Effects produced by iodine irradiation on high resistivity silicon
Authors: Lazanu, S; Slav, A; Lepadatu, AM; Stavarache, I; Palade, C; Iordache, G; Ciurea, ML

Published: DEC 10 2012, APPLIED PHYSICS LETTERS, 101, DOI: 10.1063/1.4772015

45. ELECTRICAL BEHAVIOUR RELATED TO STRUCTURE OF NANOSTRUCTURED GeSi FILMS ANNEALED AT 700 degrees C
Authors: Lepadatu, AM; Stavarache, I; Maraloiu, A; Palade, C; Teodorescu, VS; Ciurea, ML

Published: 2012, 2012 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 2, 112, DOI:

46. Structural investigations of Ge nanoparticles embedded in an amorphous SiO2 matrix
Authors: Stavarache, I; Lepadatu, AM; Gheorghe, NG; Costescu, RM; Stan, GE; Marcov, D; Slav, A; Iordache, G; Stoica, TF; Iancu, V; Teodorescu, VS; Teodorescu, CM; Ciurea, ML

Published: JAN 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 232, DOI: 10.1007/s11051-010-0021-4

47. PREPARATION AND ELECTRICAL CHARACTERIZATION OF SiGe NANOSTRUCTURES
Authors: Stavarache, I; Lepadatu, AM; Pasuk, I; Teodorescu, VS; Ciurea, ML

Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 52, DOI:

48. Stress-induced traps in multilayered structures
Authors: Ciurea, ML; Lazanu, S; Stavarache, I; Lepadatu, AM; Iancu, V; Mitroi, MR; Nigmatullin, RR; Baleanu, CM

Published: JAN 1 2011, JOURNAL OF APPLIED PHYSICS, 109, DOI: 10.1063/1.3525582

49. Calculation of the quantum efficiency for the absorption on confinement levels in quantum dots
Authors: Iancu, V; Mitroi, MR; Lepadatu, AM; Stavarache, I; Ciurea, ML

Published: APR 2011, JOURNAL OF NANOPARTICLE RESEARCH, 13, 1612, DOI: 10.1007/s11051-010-9913-6

50. STUDIES OF LONG TIME AND TRANSIENT EFFECTS INDUCED BY RADIATION IN CRYSTALLINE MATERIALS
Authors: Lazanu, S; Lazanu, I; Iordache, G; Stavarache, I; Lepadatu, A; Slav, A

Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 264, DOI:

51. STUDY OF Ge NANOPARTICLES EMBEDDED IN AN AMORPHOUS SiO2 MATRIX WITH PHOTOCONDUCTIVE PROPERTIES
Authors: Lepadatu, AM; Stavarache, I; Stoica, TF; Ciurea, ML

Published: JAN-MAR 2011, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 6, 73, DOI:

52. PREPARATION INDUCED ELECTRICAL BEHAVIOUR OF GeSiO NANOSTRUCTURES
Authors: Stavarache, I; Lepadatu, AM; Ciurea, ML

Published: 2011, 2011 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS 2011), 34TH EDITION, VOLS 1 AND 2, 34, DOI:

53. Electrical behavior of multi-walled carbon nanotube network embedded in amorphous silicon nitride
Authors: Stavarache, I; Lepadatu, AM; Teodorescu, VS; Ciurea, ML; Iancu, V; Dragoman, M; Konstantinidis, G; Buiculescu, R

Published: 2011, NANOSCALE RESEARCH LETTERS, 6, DOI: 10.1186/1556-276X-6-88

54. STUDY OF THE INTERACTIONS OF IONS IN SILICON: TRANSIENT PROCESSES AND DEFECT PRODUCTION
Authors: Lazanu, S; Lazanu, I; Iordache, G; Stavarache, I; Lepadatu, A; Slav, A

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 332, DOI:

55. TEMPERATURE DEPENDENCE OF CAPTURE COEFFICIENTS IN TRAPPING PHENOMENA
Authors: Lepadatu, AM; Stavarache, I; Lazanu, S; Iancu, V; Mitroi, MR; Nigmatulin, RR; Ciurea, ML

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 374, DOI:

56. The influence of shape and potential barrier on confinement energy levels in quantum dots
Authors: Lepadatu, AM; Stavarache, I; Ciurea, ML; Iancu, V

Published: FEB 2010, JOURNAL OF APPLIED PHYSICS, 107, DOI: 10.1063/1.3284083

57. INFLUENCE OF PREPARATION METHOD ON STRUCTURAL PROPERTIES OF GeSiO NANOSYSTEMS
Authors: Stavarache, I; Lepadatu, AM; Teodorescu, V; Stoica, T; Pasuk, I; Stan, G; Iancu, V; Ciurea, ML

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 80, DOI: 10.1109/SMICND.2010.5650255

58. INVESTIGATION OF ELECTRICAL PROPERTIES OF CARBON NANOTUBES
Authors: Ciurea, ML; Stavarache, I; Lepadatu, AM; Iancu, V; Dragoman, M; Konstantinidis, G; Buiculescu, R

Published: 2009, CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI: 10.1109/SMICND.2009.5336593

59. DEFECT PRODUCTION IN SILICON AND GERMANIUM BY LOW TEMPERATURE IRRADIATION
Authors: Lazanu, S; Lazanu, I; Lepadatu, A; Stavarache, I

Published: 2009, CAS: 2009 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, +, DOI:

60. MODELING OF TRAP DISCHARGING PROCESSES IN MULTIPLE QUANTUM WELL STRUCTURES
Authors: Ciurea, ML; Iancu, V; Stavarache, I; Lepadatu, AM; Rusnac, E

Published: 2008, CAS: 2008 INTERNATIONAL SEMICONDUCTOR CONFERENCE, PROCEEDINGS, +, DOI: 10.1109/SMICND.2008.4703332

61. Defects in silicon: From bulk crystals to nanostructures
Authors: Ciurea, ML; Iancu, V; Lazanu, S; Lepadatu, AM; Rusnac, E; Stavarache, I

Published: 2008, ROMANIAN REPORTS IN PHYSICS, 60, 748, DOI:

62. Percolation phenomena in silicon - Based nanocrystalline systems
Authors: Lepadatu, AM; Rusnac, E; Stavarache, I

Published: 2007, CAS 2007 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOLS 1 AND 2, PROCEEDINGS, 578, DOI: 10.1109/SMICND.2007.4519789

63. A nanoscale continuous transition from the monoclinic to ferroelectric orthorhombic phase inside HfO2 nanocrystals stabilized by HfO2 capping and self-controlled Ge doping
Authors: Palade, C; Lepadatu, AM; Slav, A; Cojocaru, O; Iuga, A; Maraloiu, VA; Moldovan, A; Dinescu, M; Teodorescu, VS; Stoica, T; Ciurea, ML

Published: , JOURNAL OF MATERIALS CHEMISTRY C, DOI: 10.1039/d1tc02921e

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