National Institute Of Materials Physics - Romania
Publications
1231. Effect of electron injection on defect reactions in irradiated silicon containing boron, carbon, and oxygen
Published: APR 28 2018, JOURNAL OF APPLIED PHYSICS, 123, DOI: 10.1063/1.5010965
1232. Graphene growth by molecular beam epitaxy: an interplay between desorption, diffusion and intercalation of elemental C species on islands
Published: APR 28 2018, NANOSCALE, 10, 7406, DOI: 10.1039/c8nr00615f
1233. Kinetics of cluster-related defects in silicon sensors irradiated with monoenergetic electrons
Published: APR 28 2018, JOURNAL OF APPLIED PHYSICS, 123, DOI: 10.1063/1.5011372
1234. Production and aging of paramagnetic point defects in P-doped floating zone silicon irradiated with high fluence 27MeV electrons
Published: APR 28 2018, JOURNAL OF APPLIED PHYSICS, 123, DOI: 10.1063/1.4998518
1235. Ambiguous Role of Growth-Induced Defects on the Semiconductor-to-Metal Characteristics in Epitaxial VO2/TiO2 Thin Films
Published: APR 25 2018, ACS APPLIED MATERIALS & INTERFACES, 10, 14144, DOI: 10.1021/acsami.8b01436
1236. Filling in the voids of electrospun hydroxypropyl cellulose network: Dielectric investigations
Published: APR 23 2018, EUROPEAN PHYSICAL JOURNAL PLUS, 133, DOI: 10.1140/epjp/i2018-11997-8
1237. The adsorption of silicon on an iridium surface ruling out silicene growth
Published: APR 21 2018, NANOSCALE, 10, 7094, DOI: 10.1039/c8nr00648b
1238. One-Pot Enzymatic Production of Lignin-Composites
Published: APR 20 2018, FRONTIERS IN CHEMISTRY, 6, DOI: 10.3389/fchem.2018.00124
1239. H2S sensing mechanism of SnO2-CuWO4 operated under pulsed temperature modulation
Published: APR 15 2018, SENSORS AND ACTUATORS B-CHEMICAL, 259, 268, DOI: 10.1016/j.snb.2017.12.027
1240. Strong composition dependence of resistive switching in Ba1-xSrxTiO3 thin films on semiconducting substrates and its thermodynamic analysis
Published: APR 15 2018, ACTA MATERIALIA, 148, 431, DOI: 10.1016/j.actamat.2018.02.015
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