National Institute Of Materials Physics - Romania

This study presents, for the first-time, the results of a study on the hydrodynamic diameter of essential oils (EOs) of basil and lavender in water, and solutions of EOs of basil (B) and lavender (L) and hydroxyapatite (HAp). The possible influence of basil and lavender EOs on the size of hydroxyapatite nanoparticles was analyzed by Scanning Electron Microscopy (SEM). We also investigated the in vitro antimicrobial activity of plant EOs and plant EOs hydroxyapatite respectively, against Gram-positive bacteria (methicillin-resistant Staphylococcus aureus1144 (MRSA 1144) and S. aureus 1426) and Gram-negative bacteria (Escherichia coli ATCC 25922 and Escherichia coli ESBL 4493). From the autocorrelation function, obtained by Dynamic Light Scattering (DLS) measurements it was observed that basil yielded one peak at an average hydrodynamic diameter of 354.16 nm, while lavender yielded one peak at an average hydrodynamic diameter of 259.76 nm. In the case of HAp nanoparticles coated with basil (HApB) and lavender (HApL) essential oil, the aggregation was minimal. We found that the lavender EO exhibited a very good inhibitory growth activity (MIC values ranging from <0.1% for E. coli reference strain to 0.78% for S. aureus strains). The biological studies indicated that HapL material displayed an enhanced antimicrobial activity, indicating the potential use of HAp as vehicle for low concentrations of lavender EO with antibacterial properties. Flow cytometry analysis (FCM) allowed us to determine some of the potential mechanisms of the antimicrobial activities of EOs, suggesting that lavender EO was active against E. coli by interfering with membrane potential, the membrane depolarization effect being increased by incorporation of the EOs into the microporous structure of HAp. These findings could contribute to the development of new antimicrobial agents that are urgently needed for combating the antibiotic resistance phenomena.

(CoFe2O4)(x)(SiO2-PVA)(100-X) (X = 5, 25, 50, 75 and 95%) nanocomposites were prepared via sol-gel route and annealed at 700 and 1100 degrees C. The influence of CoFe2O4 content on the structure, morphology and magnetic properties of nanocomposites was studied. X-ray diffraction patterns, Mossbauer and Fourier transform infrared spectra revealed the formation of CoFe2O4 as unique magnetic phase. The crystallinity degree increases with the CoFe2O4 content and the annealing temperature. Transmission electron microscopy images revealed the spherical shape of the obtained nanocomposites. Mossbauer spectra exhibit typical magnetic sextets, allowing the calculation of the cations distribution among tetrahedral and octahedral sites and the stoichiometry of CoFe2O4. A strong correlation between the particle morphology and the magnetic properties of nanocomposites was found. The highest saturation magnetization was identified for (CoFe2O4)(95)(SiO2-PVA)(5) nanocomposite.

Processing calcium-rich natural resources, such as marble and mussel seashells, into biomimetic products could constitute an environmentally-friendly and economically sustainable alternative given their geographical widespread. Hitherto, their value for biomedicine was demonstrated only for seashells, with the technological exploitation approaches still facing challenges with respect to the identification of generic synthesis parameters capable to allow the reproducible and designed synthesis of calcium phosphate at an industrial-ready level. In this study was targeted the optimization of Rathje synthesis method for the fabrication of biogenic calcium phosphates, by conveniently adjusting the chemical composition of employed reagents. It was shown that post-synthesis heat-treatment of compacted powders is the key step for inducing structural transformations suitable to attain biomimetic products for reconstructive orthopedic applications. The sintered materials have been multi-parametricallyevaluated from morpho-compositional, structural, wettability, mechanical and cytocompatibility points of view and the results have been cross-examined and discussed. Convenient and efficient preparation routes to produce biogenic hydroxyapatite have been identified. The functional performances of the as-prepared biogenic ceramics endorse their use as a solid and inexpensive alternative source material for the fabrication of various bone regenerative products and implant coatings. (C) 2017 Elsevier B.V. All rights reserved.

Comparative studies employing Deep Level Transient Spectroscopy and C-V measurements have been performed on recombination-enhanced reactions between defects of interstitial type in boron doped silicon diodes irradiated with alpha-particles. It has been shown that self-interstitial related defects which are immobile even at room temperatures can be activated by very low forward currents at liquid nitrogen temperatures. Their activation is accompanied by the appearance of interstitial carbon atoms. It has been found that at rather high forward current densities which enhance BiOi complex disappearance, a retardation of C-i annealing takes place. Contrary to conventional thermal annealing of the interstitial boron-interstitial oxygen complex, the use of forward current injection helps to recover an essential part of charge carriers removed due to irradiation. Published by AIP Publishing.

The growth of graphene by molecular beam epitaxy from an elemental carbon precursor is a very promising technique to overcome some of the main limitations of the chemical vapour deposition approach, such as the possibility to synthesize graphene directly on a wide variety of surfaces including semiconductors and insulators. However, while the individual steps of the chemical vapour deposition growth process have been extensively studied for several surfaces, such knowledge is still missing for the case of molecular beam epitaxy, even though it is a key ingredient to optimise its performance and effectiveness. In this work, we have performed a combined experimental and theoretical study comparing the growth rate of the molecular beam epitaxy and chemical vapour deposition processes on the prototypical Ir (111) surface. In particular, by employing high-resolution fast X-ray photoelectron spectroscopy, we were able to follow the growth of both single- and multi-layer graphene in real time, and to identify the spectroscopic fingerprints of the different C layers. Our experiments, supported by density functional theory calculations, highlight the role of the interaction between different C precursor species and the growing graphene flakes on the growth rate of graphene. These results provide an overview of the main differences between chemical vapour deposition and molecular beam epitaxy growth and thus on the main parameters which can be tuned to optimise growth conditions.

This work focuses on the kinetic mechanisms responsible for the annealing behavior of radiation cluster-related defects with impact on the electrical performance of silicon sensors. Such sensors were manufactured on high resistivity n-type standard float-zone (STFZ) and oxygen enriched float-zone (DOFZ) material and had been irradiated with mono-energetic electrons of 3.5 MeV energy and fluences of 3 x 10(14) cm(-2) and 6 x 10(14) cm (-2). After irradiation, the samples were subjected either to isochronal or isothermal heat treatments in the temperature range from 80 degrees C to 300 degrees C. The specific investigated defects are a group of three deep acceptors [H(116 K), H(140 K), and H(152 K)] with energy levels in the lower half of the band gap and a shallow donor E(30 K) with a level at 0.1 eV below the conduction band. The stability and kinetics of these defects at high temperatures are discussed on the basis of the extracted activation energies and frequency factors. The annealing of the H defects takes place similarly in both types of materials, suggesting a migration rather than a dissociation mechanism. On the contrary, the E(30 K) defect shows a very different annealing behavior, being stable in STFZ even at 300 degrees C, but annealing-out quickly in DOFZ material at temperatures higher than 200 degrees C, with a high frequency factor of the order of 10(13) s(-1). Such a behavior rules out a dissociation process, and the different annealing behavior is suggested to be related to a bistable behavior of the defect. Published by AIP Publishing.

Enhancing the long term stable performance of silicon detectors used for monitoring the position and flux of the particle beams in high energy physics experiments requires a better knowledge of the nature, stability, and transformation properties of the radiation defects created over the operation time. We report the results of an electron spin resonance investigation in the nature, transformation, and long term stability of the irradiation paramagnetic point defects (IPPDs) produced by high fluence (2 x 10(16) cm(-2) ), high energy (27 MeV) electrons in n-type, P-doped standard floating zone silicon. We found out that both freshly irradiated and aged (i.e., stored after irradiation for 3.5 years at 250 K) samples mainly contain negatively charged tetravacancy and pentavacancy defects in the first case and tetravacancy defects in the second one. The fact that such small cluster vacancy defects have not been observed by irradiation with low energy (below 5 MeV) electrons, but were abundantly produced by irradiation with neutrons, strongly suggests the presence of the same mechanism of direct formation of small vacancy clusters by irradiation with neutrons and high energy, high fluence electrons, in agreement with theoretical predictions. Differences in the nature and annealing properties of the IPPDs observed between the 27 MeV electrons freshly irradiated, and irradiated and aged samples were attributed to the presence of a high concentration of divacancies in the freshly irradiated samples, defects which transform during storage at 250 K through diffusion and recombination processes. Published by AIP Publishing.

Controlling the semiconductor-to-metal transition temperature in epitaxial VO2 thin films remains an unresolved question both at the fundamental as well as the application level. Within the scope of this work, the effects of growth temperature on the structure, chemical composition, interface coherency and electrical characteristics of rutile VO2 epitaxial thin films grown on TiO2 substrates are investigated. It is hereby deduced that the transition temperature is lower than the bulk value of 340 K. However, it is found to approach this value as a function of increased growth temperature even though it is accompanied by a contraction along the V4+-V4+ bond direction, the crystallographic c-axis lattice parameter. Additionally, it is demonstrated that films grown at low substrate temperatures exhibit a relaxed state and a strongly reduced transition temperature. It is suggested that, besides thermal and epitaxial strain, growth-induced defects may strongly affect the electronic phase transition. The results of this work reveal the difficulty in extracting the intrinsic material response to strain, when the exact contribution of all strain sources cannot be effectively determined. The findings also bear implications on the limitations in obtaining the recently predicted novel semi-Dirac point phase in VO2/TiO2 multilayer structures.

Here we describe an organic electro-optic device, obtained using electrospun hydroxypropyl cellulose (HPC) polymer fibres and nematic liquid crystals (LC). Its working mechanism is similar to that of a classic polymer-dispersed liquid crystal (PDLC) device. The scanning electron microscopy of the HPC deposited fibres shows a mat of fibres with diameters in the nano and micron size range. Dielectric spectroscopy measurements allow the determination of the dependence of the dielectric constant and electric energy loss on frequency and temperature as well as the determination of the activation energy. The electro-optic study shows a very good optical transmission curve, with an "on"-"off" switching voltage of less than 1 V/mu m.

The adsorption of Si atoms on a metal surface might proceed through complex surface processes, whose rate is determined differently by factors such as temperature, Si coverage, and metal cohesive energy. Among other transition metals, iridium is a special case since the Ir(111) surface was reported first, in addition to Ag(111), as being suitable for the epitaxy of silicene monolayers. In this study we followed the adsorption of Si on the Ir(111) surface via high resolution core level photoelectron spectroscopy, starting from the clean metal surface up to a coverage exceeding one monolayer, in a temperature range between 300 and 670 K. Density functional theory calculations were carried out in order to evaluate the stability of the different Si adsorption configurations as a function of the coverage. Results indicate that, at low coverage, the Si adatoms tend to occupy the hollow Ir sites, although a small fraction of them penetrates the first Ir layer. Si penetration of the Ir surface can take place if the energy gained upon Si adsorption is used to displace the Ir surface atoms, rather then being dissipated differently. At a Si coverage of similar to 1 monolayer, the Ir 4f spectrum indicates that not only the metal surface but also the layers underneath are perturbed. Our results point out that the Si/Ir(111) interface is unstable towards Si-Ir intermixing, in agreement with the silicide phase formation reported in the literature for the reverted interface.