National Institute Of Materials Physics - Romania

A model for current voltage characteristics of a thin film metal-ferroelectric-metal structure is constructed by combining the electrostatics of a polarized ferroelectric film with the balanced flow of charge through its interfaces. Using a set of fitting parameters, good agreement with several sets of experimental data is obtained for different system temperatures. The influence of model parameters on the current-voltage characteristic is discussed. Best fit values of some of these parameters correlate well with ab initio calculations in the literature, supporting the idea of low dielectric permittivity of the interface transition layers in the ferroelectric.

We report in this paper on the deposition and characterization of CeO2 nanostructured thin films with hierarchical morphology. Micro -sized ceria powder (CeO2, 99.9% purity) was pressed to obtain a ceramic target. An ArF laser working at 193 nm irradiated the target in controlled oxygen gas flow at constant pressure (0.1 mbar). Silicon wafers used as substrates for thin films were heated at different temperatures, up to 773 K. The influence of substrate temperature on the structure and surface morphology of ceria thin films was studied by X-ray diffraction (XRD), transmission electron microscopy (TEM), Raman spectroscopy and scanning electron microscopy (SEM). The refractive indices and information about roughness and thickness were revealed by spectroellipsometry. Crystalline cubic ceria thin films exhibiting a hierarchical structure that combines columnar and dendritic growth were obtained at temperatures above 473 K. For the samples obtained at 773 K, columns ending in pyramidal formations with sharp edges and sizes of hundreds of nanometers were observed, indicating a high crystallinity of the layer. XRD analysis reveals a consistent increase of the X-ray coherence length/crystallite size along the [111] direction with increasing temperature. Using a semi -empirical formula, Raman crystallites sizes were calculated and it was found that size increases with the temperature increasing. The spectroellipsometry investigations evidenced the increasing of refractive index with the substrate temperature increase. High surface roughness and pyramidal structures were noticed from the atomic force microscopy images for layers deposited at substrate temperature above 473 K. (C) 2015 Elsevier B.V. All rights reserved.

The influence of the transient thermal effects on the partition of the energy of selfrecoils in germanium and silicon into energy eventually given to electrons and to atomic recoils respectively is studied. The transient effects are treated in the frame of the thermal spike model, which considers the electronic and atomic subsystems coupled through the electron-phonon interaction. For low energies of selfrecoils, we show that the corrections to the energy partition curves due to the energy exchange during the transient processes modify the Lindhard predictions. These effects depend on the initial temperature of the target material, as the energies exchanged between electronic and lattice subsystems have different signs for temperatures lower and higher than about 15 K. Many of the experimental data reported in the literature support the model. (C) 2015 Elsevier B.V. All rights reserved.

High density (above 92%) superconducting bulks of MgB2 co-added with cubic BN (c-BN) and fullerenes (C-60) were obtained by the ex-situ spark plasma sintering (SPS). Compositions were (MgB2)((1-x))(C)(x)(c-BN)(0.01), x = 0.0125, 0.025, 0.05, 0.075. The co-added sample (MgB2)(0.975)(C)(0.025)(c-BN)(0.01) shows a marginally higher critical current density J(c) at intermediate magnetic fields and below 15 K than for optimum samples added with c-BN or C-60. For this sample, pinning is in the point pinning limit and the delta T-c mechanism is dominant. At high magnetic fields co-added samples are inferior to samples added with one additive, but are superior to pristine sample. Co-addition of c-BN and C-60 is not effective for vortex pinning when compared with individual addition. The result is discussed based on phase formation aspects, microstructural details and residual strain. It was found that in the presence of C-60, c-BN consumption with formation of MgNB9 is intensified with implications on different elements that influence pinning. (C) 2015 Elsevier B.V. All rights reserved.

This paper presents some investigations on the optical and morphological properties of the polymer (matrix): monomer (inclusion) composite materials obtained from blends of bisphenol A polycarbonate and amidic monomers. For the preparation of the composite films, we have selected monomers characterised by a maleamic acid structure and synthesised them starting from maleic anhydride and aniline derivatives with -COOH, -NO2, -N(C2H5)(2) functional groups attached to the benzene ring. The composite films have been deposited by spin coating using a mixture of two solutions, one containing the matrix and the other the inclusion, both components of the composite system being dissolved in the same solvent. The optical transmission and photoluminescence properties of the composite films have been investigated in correlation with the morphology of the films. The scanning electron microscopy and atomic force microscopy have revealed a non-uniform morphology characterised by the development of two distinct phases. We have also investigated the generation of some optical non-linear (ONL) phenomena in these composite systems. The composite films containing as inclusions monomers characterised by the presence of one -COOH or two -NO2 substituent groups to the aromatic nucleus have shown the most intense second-harmonic generation (SHG). The second-order optical non-linear coefficients have been evaluated for these films, and the effect of the laser power on the ONL behaviour of these materials has also been emphasised.

Submerged in liquid plasma treatment is a new approach for nanomaterials functionalization. This paper presents a surfactant free method for functionalization of graphene nano-platelets derived from carbon nanowalls through plasma jet treatment of their water suspensions. The untreated and under-liquid plasma treated suspensions were characterized in terms of their UV-Vis absorption, zeta-size, zeta-potential, pH, and conductivity. Investigation of dried material revealed that the graphene nano-sheets morphology and structure have been preserved, showing also new oxygen functional groups bonded to the carbon network after in liquid plasma treatment. The results demonstrate the efficiency of this technique in changing the properties of carbon nanowalls suspensions and also in getting functionalized multilayered graphene sheets.

Surface layers have already been observed by broadband dielectric spectroscopy for composite systems formed by adsorption of rod-like cyanophenyl derivates as probe molecules on the surface of oxide particles. In this work, features of the surface layer are reported; samples with different amounts of the probe molecules adsorbed onto oxide (nano) particles were prepared in order to study their interactions with the surface. Thermogravimetric analysis (TGA) was applied to analyze the amount of loaded probe molecules. The density of the surface species n(s) was introduced and its values were estimated from quantitative Fourier transform infrared spectroscopy (FTIR) coupled with TGA. This parameter allows discriminating the composites into several groups assuming a similar interaction of the probe molecules with the hosts of a given group. An influence factor H is further proposed as the ratio of the number of molecules in the surface layer showing a glassy dynamics and the number of molecules adsorbed tightly on the surface of the support: It was found for aerosil composites and used for calculating the maximum filling degree of partially filled silica MCM-41 composites showing only one dielectric process characteristic for glass-forming liquids and a bulk behavior for higher filling degrees.

Spectral and transport properties of electrons in confined phosphorene systems are investigated in a five hopping parameter tight-binding model, using analytical and numerical techniques. The main emphasis is on the properties of the topological edge states accommodated by the quasiflat band that characterizes the phosphorene energy spectrum. We show, in the particular case of phosphorene, how the breaking of the bipartite lattice structure gives rise to the electron-hole asymmetry of the energy spectrum. The properties of the topological edge states in the zigzag nanoribbons are analyzed under different aspects: degeneracy, localization, extension in the Brillouin zone, dispersion of the quasiflat band in magnetic field. The finite-size phosphorene plaquette exhibits a Hofstadter-type spectrum made up of two unequal butterflies separated by a gap, where a quasiflat band composed of zigzag edge states is located. The transport properties are investigated by simulating a four-lead Hall device (importantly, all leads are attached on the same zigzag side), and using the Landauer-Buttiker formalism. We find out that the chiral edge states due to the magnetic field yield quantum Hall plateaus, but the topological edge states in the gap do not support the quantum Hall effect and prove a dissipative behavior. By calculating the complex eigenenergies of the non-Hermitian effective Hamiltonian that describes the open system (plaquette+leads), we prove the superradiance effect in the energy range of the quasiflat band, with consequences for the density of states and electron transmission properties.

Hydroxyapatite (HA) is a consecrated biomaterial for bone reconstruction. In the form of thin films deposited by pulsed laser technologies, it can be used to cover metallic implants aiming to increase biocompatibility and osseointegration rate. HA of animal origin (bovine, BHA) reinforced with MgF2 (2 wt.%) or MgO (5 wt.%) were used for deposition of thin coatings with improved adherence, biocompatibility and antimicrobial activity. For pulsed laser deposition experiments, a KrF* (lambda = 248 nm, T-EWHM <= 25 ns) excimer laser source was used. The deposited structures were characterized from a physical-chemical point of view by X-Ray Diffraction, Fourier Transform Infra-Red Spectroscopy, Scanning Electron Microscopy in top- and cross-view modes, Energy Dispersive X-Ray Spectroscopy and Pull-out adherence tests. The microbiological assay using the HEp-2 cell line revealed that all target materials and deposited thin films are non-cytotoxic. We conducted tests on three strains isolated from patients with dental implants failure, i.e. Microccocus sp., Enterobacter sp. and Candida albi cans sp. The most significant anti-biofilm effect against Microcococcus sp. strain, at 72 h, was obtained in the presence of BHA:MgO thin films. For Enterobacter sp. strain a superior antimicrobial activity at 72 h was noticed, in respect with simple BHA or Ti control. The enhanced antimicrobial performances, correlated with good cytocompatibility and mechanical properties recommend these biomaterials as an alternative to synthetic HA for the fabrication of reliable implant coatings for dentistry and other applications. (C) 2015 Elsevier B.V. All rights reserved.

The article presents the fabrication and characterization of NV (non-volatile) memory devices based on SiO2/Ge/SiO2 trilayer structures on Si wafers. The trilayer structures were obtained by using the magnetron sputtering method for the deposition of gate SiO2 and intermediate Ge layers and the rapid thermal oxidation for the growth of tunnel SiO2 layer. Rapid thermal annealing was performed for obtaining Ge nanocrystals embedded in the SiO2 gate oxide, as charge-storage elements. Two NV cross bar memory structures based on two cell sizes of 300x300 and 100x100m(2) were manufactured. Capacity-voltage curves were measured on the memory devices, at different frequencies in the 1kHz-10MHz range at room temperature (RT) for evidencing the hysteresis loops and for showing that the devices keep memory in time at these frequencies. We have obtained capacity-voltage hysteresis curves with large memory window up to 2V. We demonstrate that the trilayer structure SiO2/Ge/SiO2/on Si with Ge NCs embedded in the SiO2 gate oxide is suitable for NV memory applications having a large number of cells.