National Institute Of Materials Physics - Romania

CdS micro- and nano-structures (micro/nanotubes and nanostructured films) were obtained by ammonia-free chemical bath deposition using polymer templates (ion track-etched polycarbonate membranes and poly(styrene-hydroxyethyl methacrylate) nanosphere arrays). The semiconductor structures were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), optical absorption, photoluminescence and electrical measurements. The diameters of CdS tubes are between 300 nm and few microns and the lengths are up to tens of micrometers. The SEM images prove that the CdS films are nanostructured due to the deposition on the polymer nanosphere arrays. For both CdS structures (tubes and films) the XRD patterns show a hexagonal phase. The optical studies reveal a band gap value of about 2.5 - 2.6 eV and a red luminescence at similar to 1.77 eV. A higher increase of conductivity is observed for illuminating the CdS nanostructured film when compared to the simple semiconductor film. This is a consequence of the periodic patterning induced by the polymer nanosphere array. (C) 2012 Elsevier Ltd. All rights reserved.

The effects of the self-assembled 4,4'-thio-bis-benzenethiolate protected gold nanoclusters onto a p-GaAs (1 0 0) electrode were examined by AFM, XPS, SHG and EIS investigations. The AFM and XPS results revealed a well-ordered overlayer exhibiting a bi-modal highly correlated fractal behavior which, however, cannot fully protect the semiconducting surface against the oxidation in air. The EIS data pointed out the influence exerted by the gold-monolayer protected clusters (Au-MPCs) over the charging/discharging processes observed at p-GaAs (1 0 0) electrode. Although the applied potential is varied linearly, the potential drop within the semiconductor space charge region as well as that across the Au-MPCs layer undergoes stepped changes supposed to result in the discrete charging of the Au-MPCs. These effects point to an electronic equilibrium between the Au-MPCs and the semiconducting substrate. Fermi level pinning and enhancement of the SHG response in the potential range where the surface/interface states in the semiconductor band gap become electrically active bring further proof in this respect. (c) 2012 Elsevier Ltd. All rights reserved.

Unconventional in situ synthesis of MgB2 undoped and doped with fullerene (C-60) was performed by using a single-mode microwave (MW) furnace. Structural properties suggested that C substitutes for B in the crystal lattice of MgB2, while the J(c) showed typical enhancement at high magnetic fields when C chemical doping occurred. This behavior was similar to published results for another field-activated unconventional method of processing, i.e., spark plasma sintering, and it was opposite to the conventional powder-in-tube method for which chemical substitution was not realized when using addition of C-60. Certain morphologically unique features such as the occurrence of needlelike grains were revealed in the MW samples. Our MW samples showed higher relative density (<= 83%) than previously reported data. Magnetic relaxation experiments suggested the presence of microscopic flux jumps in the MW samples, while macroscopic flux jumps were not observed.

We present here results on samarium oxide thin films, obtained by pulsed laser deposition and by radio frequency assisted pulsed laser deposition. Three different substrate types were used: silicon, platinum covered silicon and titanium covered silicon. The influence of the deposition parameters (oxygen pressure and laser fluence) on the structure and morphology of the thin films was studied. The substrate-thin film interface zone was investigated; the optical and electrical properties (the losses, dielectric constant and leakage currents) were also determined. (C) 2012 Elsevier B.V. All rights reserved.

Errors in the article by Popa & Balzar [], caused by an equation from literature used without checking, are corrected. It is expected that other published papers will have been affected as the source error is in a reference book.

(Na1/2Bi1/2)TiO3 doped in situ with 11 inol% BaTiO3 (NBT-BT0.11) powders were synthesized by a sol-gel method, and the electrical properties of the resulting ceramics were investigated. The powders consisting of uniform and fine preliminary particles of about 50 nm were prepared by calcining the gel precursor at 700 degrees C. (Na1/2Bi1/2)(0.89)Ba0.11TiO3 ceramics, sintered at temperatures up to 1150 degrees C have a rhombohedral symmetry while the ceramic sintered at 1200 degrees C exhibits a tetragonal crystalline structure. The ceramics show high dielectric constant (epsilon(r) similar to 5456), dielectric loss of 0.02, depolarization temperature T-d similar to 110 degrees C and temperature corresponding to the maximum value of dielectric constant T-m similar to 262 degrees C. The dielectric constant (epsilon(33)) and the piezoelectric constant (d(33)) attain the maximum values of 924 and 13 pC/N, respectively, while the electromechanical coupling factor (k(p)) value is 0.035. The NBT-BT0.11 ceramics derived from sol-gel present high mechanical quality factor (Q(m) similar to 860). The dielectric and piezoelectric properties values of NBT-BT0.11 ceramics derived from sol-gel are smaller than those of samples produced by the conventional solid state reaction method, due to the grains size and oxygen vacancies that generate dipolar defects. (C) 2012 Elsevier Ltd. All rights reserved.

A simple and reproducible fabrication process for the synthesis of FeSe superconductors has been developed. The properties were characterized by X-ray diffraction, scanning electron microscope, superconductivity quantum interference device, and physical property measurement system. It showed a zero resistance superconducting critical temperature of similar to 7.9 K and an onset critical temperature of similar to 13.9 K. The upper critical magnetic field at zero temperature was estimated to be 31 T. The growth mechanism of FeSe flakes was also discussed.

Niobium and tantalum sheets were loaded with tritium and their superconducting properties were investigated. Superconductivity is rather robust in both materials though they belong to different types of superconductors. The critical temperature does not change in the case of Nb at low field but decreases slightly in the case of Ta. The tritium-loaded Nb shows a higher remanent magnetization which we attribute to the subsurface accumulation of defects, but the high field irreversible magnetization is smaller than for the bare sample. In the case of Ta, both the remanent magnetization and the irreversible magnetization are slightly reduced after tritiation.