National Institute Of Materials Physics - Romania

In order to develop the building blocks for future biosensing and spintronic applications, an engraving technique using electron beam lithography is employed in order to develop nanomagnetic pre-patterned structures with logic potential. The paper describes the realization and morphological and magnetic characterization of potentially logic-conditioned substrates, a building block to be further used as an integration platform upon which nanodevices, such as magnetic wires, or various geometrical shapes, circles, triangles, can be considered as pre-requisite for full integration into logic devices. As a proof of concept, regular arrays of FePt circles or magnetic dots were devised and structural characterization by X-ray diffraction and transmission electron microscopy proved the occurrence of the tetragonal L1(0) phase. Moreover, the magnetic characterization provided more insight into the potential of such arrays of magnetic devices as the hysteresis provided good values of magnetic coercivity, remanent and saturation magnetization. These findings show good potential for developing regular arrays of uniformly shaped magnetic entities with encouraging magnetic performances in view of potential applications in various applications.

Recent progress concerning the development of counter electrode material (CE) from the dye-sensitized solar cells (DSSCs) and the electrode material (EM) within supercapacitors is reviewed. From composites based on carbon nanotubes (CNTs) and conducting polymers (CPs) to their biggest competitor, namely composites based on graphene or graphene derivate (GD) and CPs, there are many methods of synthesis that influence the morphology and the functionalization inside the composite, making them valuable candidates for EM both inside DSSCs and in supercapacitors devices. From the combination of CPs with carbon-based materials, such as CNT and graphene or GD, the perfect network is created, and so the charge transfer takes place faster and more easily. Inside composites, between the functional groups of the components, different functionalizations are formed, namely covalent or non-covalent, which further provide the so-called synergic effect. Inside CPs/CNTs, CNTs could play the role of template but could also be wrapped in a CP film due to pi-pi coupling enhancing the composite conductivity. Active in regenerating the redox couple I-/I3-, the weakly bound electrons play a key role inside CPs/GD composites.

A series of cobalt-iron mixed oxides, CoxFe3-xO4 (x = 0; 0.05; 0.1; 0.15), were synthesized by coprecipitation and tested for oxidative decarboxylation of malic acid to pyruvic or malonic acid. The characterization of catalysts was performed by different techniques such as X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, Diffuse Reflectance Infrared Fourier Transform Spectroscopy (DRIFT) and Ultraviolet-visible spectroscopy (UV-Vis). Among studied catalysts, Co0.15Fe2.85O4 sample (denoted Co3Fe) showed the highest malic acid conversion in oxidative decarboxylation reaction as well as the highest pyruvic acid yield. This behavior can be due to the fact that this sample has the highest content of tetrahedral Co2+ that replaces Fe3+ from octahedral position that determine an increased number of defects that play a crucial role for the malic acid conversion.

Rhombohedral phase HfxZr1-xO2 (HZO, x from 0 to 1) films are promising for achieving robust ferroelectric polarization without the need for an initial wake-up pre-cycling, as is normally the case for the more commonly studied orthorhombic phase. However, a large spontaneous polarization observed in rhombohedral films is not fully understood, and there are also large discrepancies between experimental and theoretical predictions. In this work, in rhombohedral ZrO2 thin films, we show that oxygen vacancies are not only a key factor for stabilizing the phase, but they are also a source of ferroelectric polarization in the films. This is shown experimentally through the investigation of the structural properties, chemical composition and the ferroelectric properties of the films before and after an annealing at moderate temperature (400 degrees C) in an oxygen environment to reduce the V-O concentration compared. The experimental work is supported by density functional theory (DFT) calculations which show that the rhombohedral phase is the most stable one in highly oxygen defective ZrO2 films. The DFT calculations also show that V-O contribute to the ferroelectric polarization. Our findings reveal the importance of V-O for stabilizing rhombohedral ZrO2 thin films with superior ferroelectric properties.

In the literature, a comprehensive assessment of the combined impacts of chemical and mechanical parameters on the properties of thin films grown by SILAR is missing. In this work, ZnO film formation is investigated under variable precursor concentration, pH, withdrawal speed and number of cycles. Interestingly, the produced ZnO films displayed remarkable aspect ratio and morphological variability, ranging from the commonly obtained nanograins shape towards hexagonal nanorods, flowerlike rods and nanoneedles, which to our knowledge have not yet been achieved by using single step SILAR process. More particularly, low concentration and intermediate pH and withdrawal rates were favorable for nanorods formation. In addition, increasing the withdrawal speed from 26 to 30 cmmin(-1 )resulted in a thinner film with improved rod uniformity and reduced crystallite size. This is the first study on the impact of substrate withdrawal speed on SILAR films. Among all studied parameters, the number of cycles was particularly useful for tuning film thickness, while preserving its target shape. In addition, the films grown under a higher number of cycles showed improved film crystallinity and rod orientation with reduced dislocation density, microstrain and bandgap energy. In our conditions, the most suitable combination of parameters required for exhibiting optimized nanorod-shaped coating are: a concentration of 0.07 M, pH of 10.5, speed of 30 cmmin(-1 ) and 40 cycles. In this case, XRD, XPS, Raman and FTIR spectra displayed typical features of hexagonal Wurtzite structure of ZnO with no impurities within the film surface, whereas AFM measured a thickness of 1.4 mu m with 243 nm surface roughness.

In this paper, graphene was obtained on a copper substrate using the CVD method, and then it was transferred to various substrates such as glass and SiO2/Si patterned with metallic interdigitated electrodes. The graphene thus obtained was characterized using Raman spectroscopy, scanning electron microscopy (SEM), current-voltage measurements, and electrochemical methods, in order to be used for sensing applications.

. The study on efflorescence in salts collected from Curtea de Arges cathedral's exterior wall during restorations aimed to characterize compounds and lithic material using SEM-EDX, XRD, Raman, FTIR. Radiocarbon measurements using AMS method and FTIR results demonstrate decarbonation/recarbonation at the compound-lithic interface but further research is required.

In this paper, short-wave infrared (SWIR) photosensing of GeSn-HfO2 films with small Si amount is studied in correlation with structure and composition of films. SiGeSnHfO2 films are deposited by magnetron sputtering and nanostructured by subsequent rapid thermal annealing. XRD and Raman spectroscopy investigations are carried out revealing the SiGeSn nanocrystallization in annealed films. Spectral responsivity shows enhanced sensitivity up to 2 mu m due to SiGeSn nanocrystals (NCs) and clusters with contribution from disorder.

This study examines the opto-electric characteristics of Ge:SiO2 composite films produced via magnetron sputtering at substrate temperatures of 300 degrees C, 400 degrees C, and 500 degrees C, with varying Ge concentrations. We employed x-ray diffraction, current-voltage measurements, and spectral photocurrent analysis to investigate the films structural, optical, and opto-electrical properties. Illumination of the samples resulted in a marked increase in current compared to dark conditions. Spectral photocurrent measurements revealed cutoff wavelengths of 1300 nm for films with 25:75 vol% Ge:SiO2 ratio, extending to 1320 nm for compositions with higher Ge content (60:40 vol%). These findings align with observations from I-V curve analyses. Our research highlights the potential of Ge:SiO2 composites for enhancing optoelectronic device performance. The results underscore the importance of continued investigation and innovative applications in this field to drive technological advancements.

A metallic phthalocyanine (zinc phthalocyanine - ZnPc) and a non-metallic porphyrin (10,15,20-tetra(4-pyridyl) 21H,23H-porphyne -TPyP) were used to deposit mixed and stacked organic thin films by vacuum thermal evaporation method. The obtained layers were analyzed in a comparative manner from optical, structural, morphological and electrical point of view. The ultraviolet-visible spectra of the deposited layers showed that both organic components have absorption bands in the visible part of the solar spectrum, which means that the acceptor TPyP also contributes to absorption together with the donor. The photoluminescence spectra revealed only the emission bands associated to the porphyrin, especially in the single and stacked layers, while a quenching effect of the photoluminescence was noted in the mixed ones. The X-ray diffraction showed that the prepared layers are in general amorphous. The constituent materials in the single layers and the ratio between the two organic components in the mixed layers affect the morphology of the deposited films as was emphasized by scanning electron microscopy and atomic force microscopy analysis. The current density-voltage characteristics plotted under illumination revealed that the highest short-circuit current value was achieved in the case of the structure based on the layer showing the lowest roughness and thickness emphasizing the significant role played by these parameters of the layers considered for possible applications in the optoelectronic device area.