Publications

Multiband superconductors can have several types of domains that are inhibited in conventional single-band superconductors. These domains are phase domains and chiral domains and their domain wall are an interband phase difference soliton. In a superconductor with an odd number of electronic bands (five or more) and with positive interband Josephson interactions, we find other types of domains with different interband phase differences. We call these domains configuration domains because pseudo-order parameters for each band are dispersed in the complex plain and several configurations, which have several local minima. Fractional vortices serve as hubs for phase difference solitons (configuration domain walls). The divergence of the number of configurations with local minima would pose a serious problem for the stability of superconductivity. (C) 2011 Elsevier B.V. All rights reserved.

Langanite nanopowders doped with erbium and ytterbium were prepared by a citrate sol-gel method and annealed in air at various temperatures between 700 degrees C and 1000 degrees C. For annealing temperatures 900 degrees C and 1000 degrees C, part of the langanite transforms in perovskite (LaGaO(3)), as evidenced in XRD spectra. The reddish color of the powders due to color centers associated to oxygen defects intensifies with increasing annealing temperature. Green and red luminescence was obtained for IR (933 nm) pumping and only green for UV pump. The mechanisms involved in luminescence and energy transfer processes are presented and discussed.

The European X-ray Free Electron Laser (XFEL) will deliver 30,000 fully coherent, high brilliance X-ray pulses per second each with a duration below 100 fs. This will allow the recording of diffraction patterns of single complex molecules and the study of ultra-fast processes. Silicon pixel sensors will be used to record the diffraction images. In 3 years of operation the sensors will be exposed to doses of up to 1 GGy of 12 keV X-rays. At this X-ray energy no bulk damage in silicon is expected. However fixed oxide charges in the insulating layer covering the silicon and interface traps at the Si-SiO(2) interface will be introduced by the irradiation and build up over time. We have investigated the microscopic defects in test structures and the macroscopic electrical properties of segmented detectors as a function of the X-ray dose. From the test structures we determine the oxide charge density and the densities of interface traps as a function of dose. We find that both saturate (and even decrease) for doses between 10 and 100 MGy. For segmented sensors the defects introduced by the X-rays increase the full depletion voltage, the surface leakage current and the inter-pixel capacitance. We observe that an electron accumulation layer forms at the Si-SiO(2) interface. Its width increases with dose and decreases with applied bias voltage. Using TCAD simulations with the dose dependent parameters obtained from the test structures, we are able to reproduce the observed results. This allows us to optimize the sensor design for the XFEL requirements. In addition the Si-SiO(2) interface region has been studied with time resolved signals induced by sub-nanosecond 660 nm laser light, which has a penetration of about 3 m m in silicon. Depending on the biasing history, humidity and irradiation dose, losses of either electrons or holes or no charge losses are observed. The relevance of these results for the sensor stability and performance is under investigation.

The formation and crystallization of disordered nanosized ZnO resulting from the thermal decomposition of nanocrystalline hydrozincite [Zn-5(CO3)(2)(OH)(6)] has been Observed and investigated during pulse annealing experiments Up to 625 degrees C in air or vacuum by electron paramagnetic resonance of trace amounts of substitutional Mn2+ impurity ions, in correlation with X-ray diffraction and transmission electron microscopy measurements. The mesoporous structure of the disordered ZnO, which initially forms in air and vacuum at 225 and 175 degrees C, respectively, further transforms into nanocrystalline ZnO of increasing particle size and improved lattice quality at higher annealing temperatures. The crystallization process, which does not affect the concentration of the substitutional impurity ions, as well as the simultaneous presence of both disordered and crystalline phases, should be considered in further applications of the resulting nanosized ZnO.

This study reports a two-steps route for obtaining magnetic nanoparticles-polysaccharide hybrid materials consisting of Fe3O4, NiFe2O4 and CuFe2O4 nanoparticles synthesis by coprecipitation method in the presence of a soft template followed by coating of ferrite nanoparticles of 8-10-nm size range with polysaccharide type polymers-sodium alginate or chitosan. Magnetic oxide nanoparticles and the corresponding hybrid materials were characterized by X-ray diffraction (XRD), Mossbauer spectroscopy, atomic absorption spectroscopy (AAS), FTIR spectroscopy, scanning and transmission electron microscopy (SEM and TEM) and specific surface area measurements. The vibrating sample magnetometry confirms the superparamagnetic properties of the synthesized ferrites and hybrids. Using this route, the percent of magnetic nanoparticles retained in chitosan-based hybrid materials is nearly double in comparison with that of sodium alginate-based materials. The biological activity tests on Escherichia coli ATCC 25922, Pseudomonas aeroginosa ATCC 27853, Staphylococcus aureus ATCC 25923 and Candida scotti microorganisms show the non-toxic properties of prepared hybrid materials.

Due to its low resistivity and excellent thermal stability, IrO2 has attracted attention as an alternative for electrode material in ferroelectric integrated circuit applications. Oriented growth of IrO2 electrode film was investigated with the goal to control the texture of the PZT thin film. IrO2 films were prepared by DC reactive sputtering. PZT film was prepared by RF magnetron sputtering single target deposition method. The whole layer stack was grown onto amorphous thermal oxide of a silicon wafer. The results indicate that IrO2 thin film was preferentially (200) oriented when a TiO2 seeding layer was used. The orientation relationships along the whole PZT(111)/IrO2(200)/TiO2(200)/Ti structure was discussed.

BaTi0.87Sn0.13O3 (BTS13) nanopowder was prepared by low-temperature aqueous synthesis (LTAS) method. The evolution of the structure and microstructure of the precursor precipitate, heated at temperatures up to 1000 degrees C was studied by TGA, FT-IR, SEM and XRD techniques. The dried precipitate showed a microstructure consisting of nano-sized grains (similar to 40 nm) with great tendency to agglomeration. BaTi0.87Sn0.13O3 single phase was obtained at 800 degrees C. The ceramics prepared from as-obtained BTS13 powders (60-70 nm) show good dielectric and ferroelectric characteristics. The dielectric constant was about 4800 and the dielectric loss (tan delta) was 0.229 at 1 kHz and at the Curie temperature (31 degrees C). The remanent polarization (P-r) and the coercive field (E-C) of Ba0.97Ho0.03TiO3 ceramics, at 1 kHz, were P-r = 13 mu C/cm(2) and E-C = 0.89 kV/cm. The ferroelectric parameters E-C and P-r decrease with increasing frequency in the domain 100 Hz to 10 kHz. (C) 2011 Elsevier B.V. All rights reserved.

The thermoluminescence (TL) response to gamma-ray irradiation of tooth enamel is reported. The tooth enamel was separated from dentine by using mechanical and physico-chemical procedures followed by grinding (grain size 100 urn) and etching. Then was attributed to the recombination of CO(2)(-) radicals incorporated into or attached to the surface of hydroxyapatite crystals. The growth of the 380 degrees C peak with absorbed dose was examined with irradiated tooth enamel samples and reconstructed doses evaluated for tooth enamel samples from four human subjects. (C) 2011 Elsevier Ltd. All rights reserved.

There was discovered a material with strong photoconduction effect. Langmuir-Blodgett film with barium stearate, and selenium carbazole has been prepared and tested for the change of conductivity (decrease) under the influence of UV-radiation. Change of resistance in a time scale of 0-400 seconds was evidenced. The UV radiation determines an increase of the electrical resistence and after switching off the illumination a slow decrease of the resistance occurs.