National Institute Of Materials Physics - Romania

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5781 articles found

3061. SIMULATION OF PHASE CHANGE MATERIALS USING CELLULAR AUTOMATA

Authors: Velea, A

Published: OCT-DEC 2010, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 5, 1027, DOI:

The most promising media for rewritable applications are the phase change materials [ 1]. For the modelling of the phase transition processes in phase change materials it has been considered the switching unit called "commuton" [2]. A commuton is a minimum cluster of atoms that supports the reversible change from OFF to ON state under the influence of an external applied energy pulse. It was developed a bidimensional model based on the cellular automata approach [3] to predict switching behavior in a Ge2Sb2Te5 phase change chalcogenide film. We suppose that the formation of the percolation paths as a function of phase change induced in commutons can explain the switching phenomenon. The percolation thresholds of the switching were calculated for different sizes of the simulated system and the percolation kinetics was investigated.

3062. Optical and X-ray absorption spectroscopy in lead doped lithium fluoride crystals

Authors: Somma, F; Aloe, P; d'Acapito, F; Montereali, RM; Polosan, S; Secu, M; Vincenti, MA

Published: 2010, 11TH EUROPHYSICAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS (EURODIM 2010), 15, DOI: 10.1088/1757-899X/15/1/012035

LiF:Pb doped crystals were successfully grown by Kyropoulos method, starting with drying powders. The presence of Pb2+ ions in the LiF crystals were evidenced by the absorption band at 278 nm and by 375 nm photoluminescence. The presence of some other Pb structures with oxygen compounds in the as made samples was evidenced, decreasing after some annealing procedures. The local environment and valence state of Pb in LiF were studied by X-ray Absorption Spectroscopy at the Pb L-III and L-I edges. XANES data reveal that Pb is present as Pb2+ whereas EXAFS data show that it is incorporated in the crystal and not forming PbF2 precipitates. Identical spectra are obtained for samples as prepared and after thermal annealing up to 650 degrees C demonstrating the stability of the incorporation site. Also the concentration of Pb in the crystal has no effect on the location site of the metal as the same spectrum is obtained for specimens with different dopant concentrations.

3063. RPA APPROACH TO NON-LINEAR TRANSPORT IN QUANTUM DOTS

Authors: Tanatar, B; Moldoveanu, V

Published: 2010, CONDENSED MATTER THEORIES, VOL 24, +, DOI: 10.1142/9789814289153_0040

An accurate theoretical treatment of electron-electron interactions in mesoscopic systems is available in very few cases and approximation schemes are developed in most of the applications, especially for many-level quantum dots. Here we present transport calculations within the random-phase approximation for the Coulomb interaction using the Keldysh Green's functions formalism. We describe the quantum dot systems by a tight-binding Hamiltonian. Our method is similar to the one used by Faleev and Stockman [Phys. Rev. B 66 085318 (2002)] in their study of the equilibrium properties of a homogeneous 2D electron gas. The important extension at the formal level is that we combine the RPA and the Keldysh formalism for studying non-linear transport properties of open quantum dots. Within the Keldysh formalism the polarization operator becomes a contour-ordered quantity that should be computed either from the non-interacting Green functions of the coupled quantum dot (the so-called G(0)W approximation) either self-consistently (GW approximation). We performed both non-selfconsistent and self-consistent calculations and compare the results. In particular we recover the Coulomb diamonds for interacting quantum dots and we discuss the charge sensing effects in parallel quantum dots.

3064. Magnetism and transport properties of gamma-irradiated polymer-CrO2 composites

Authors: Sandu, V; Popa, S; Ivan, I; Sandu, E; Hurduc, N; Nor, I

Published: MAY-JUN 2010, JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 322, 1408, DOI: 10.1016/j.jmmm.2009.09.045

The transport properties of the gamma-irradiated CrO2-polymer composites were investigated. The resistance R is strongly current I dependent, except at high temperature where it displays a semiconductor-like temperature dependence for all currents. At low currents, I <= 10 mu A, as the temperature decreases far below the ferromagnetic transition, the resistance decreases first, then reaches a minimum, and at last increases again toward a second peak. At even lower temperatures, the second peak is followed by a metallic-like temperature dependence of R that ends at a cusp point marking the metal-insulator transition. The increase of the current shifts the cusp toward lower temperatures and the first minima toward higher temperatures. The resistance increases with the increase in current for all currents in the range 0.2 <= I <= 10 mu A. For I >= 50 mu A, the resistance increases monotonically with the decrease in temperature in the whole temperature range but obeys different laws at low and high temperatures. An explanation attempt in terms of spin transport, disorder, and thermal effects is proposed. (C) 2009 Elsevier B.V. All rights reserved.

3065. Lattice defect assisted incorporation of Mn2+ ions in cubic II-VI semiconductor quantum dots

Authors: Nistor, SV; Stefan, M; Nistor, LC; Ghica, D; Mateescu, CD; Barascu, JN

Published: 2010, 11TH EUROPHYSICAL CONFERENCE ON DEFECTS IN INSULATING MATERIALS (EURODIM 2010), 15, DOI: 10.1088/1757-899X/15/1/012024

Electron paramagnetic resonance spectra from substitutional Mn2+ ions in quantum dots of cubic ZnS with tight size distribution centred at 2 nm were recorded in the 9.8 GHz and 34 GHz frequency bands. Their quantitative analysis with line shape simulation and fitting computer programs accounting for both forbidden transitions and line broadening effects demonstrate the presence of a local axial distortion attributed to a neighbouring extended planar stacking defect. The presence of such extended lattice defects, confirmed from a high resolution transmission electron microscopy study on presently investigated cubic ZnS quantum dots, seems to be essential in the incorporation and localization of Mn2+ activating ions in other cubic II-VI semiconductor quantum dots as well.

3066. Growth and Characterization of ZnO:Mn Submicron Wires via Electrodeposition from Nitrate-Lactic Acid Solution

Authors: Sima, M; Grecu, MN; Sima, M; Enculescu, I

Published: 2010, SEMICONDUCTORS, METAL OXIDES, AND COMPOSITES: METALLIZATION AND ELECTRODEPOSITION OF THIN FILMS AND NANOSTRUCTURES, 25, 171, DOI: 10.1149/1.3318515

Electrodeposition of manganese doped ZnO wires into polycarbonate membranes from an aqueous solution containing Zn(NO3)(2), Mn(NO3)(2) and lactic acid was investigated using linear sweep voltammetry and electrochemical impedance spectroscopy (EIS). The equivalent electrical circuits used for fitting experimental results were similar to those for characterization of metal/polymer coating systems. The precipitation of metal oxides in the pores of membrane used as template was observed at potentials between -0.9 and -1.15V/SCE. Morphology of the ZnO: Mn submicron wires arrays was observed by scanning electron microscopy and the Mn content of the obtained samples was measured by X-ray analysis. The submicron wires prepared at a potential of -1.1V/SCE have a composition expressed by the formula Zn0.97Mn0.03.

3067. QUANTITATIVE STRUCTURE - ACTIVITY RELATIONSHIP IN ANTIDIABETIC DRUGS BY USING TOPOLOGICAL DESCRIPTORS

Authors: Popescu, M; Velea, A; Mihai, C; Tivadar, S

Published: JUL-SEP 2010, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 5, 633, DOI:

The quantitative structure - activity relationship in antidiabetic oral drugs has been analyzed on the basis of topological indices that allow to discriminate the structure of different molecules either small or large. The overall correlation structure - activity allows to find the best antidiabetic drugs and to predict the activity of new compound proposed as oral antidiabetic. The screened procedure based on topological indices prevents the expensive and long testing of a high number of compounds.

3068. Development Of Magnetic Fe@C Nanocomposites Obtained Via The Laser Pyrolysis: Structural And Disaggregation Properties

Authors: Morjan, I; Alexandrescu, R; Dumitrache, F; Fleaca, C; Birjega, R; Soare, I; Luculescu, CR; Prodan, V; Kuncser, V; Filoti, G; Xu, H; Wang, D

Published: 2010, BONSAI PROJECT SYMPOSIUM: BREAKTHROUGHS IN NANOPARTICLES FOR BIO-IMAGING, 1275, +, DOI: 10.1063/1.3505074

Fe@C) nanoparticles have been successfully synthesized using the laser pyrolysis method and variable nozzle geometries. At large nozzle diameters, XRD and SAED analysis clearly identified distinct alpha-Fe and Fe3C phases. TEM and HRTEM indicated that these Fe-based nanoparticles have an average grain size of 3.5-10.2 nm. Temperature dependent Mossbauer spectra further confirm their distinct nanophases. By using a multi-step reduction procedure, Fe@C powders can be disaggregated into stable, water soluble nanoparticles.

3069. HIGHLY TEXTURED (001) AlN NANOSTRUCTURED THIN FILMS SYNTHESIZED BY REACTIVE MAGNETRON SPUTTERING FOR SAW AND FBAR APPLICATIONS

Authors: Stan, GE; Pasuk, I; Galca, AC; Dinescu, A

Published: OCT-DEC 2010, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 5, 1054, DOI:

Highly oriented (001) AlN (wurtzite type) thin films have been successfully deposited on silicon, platinized silicon and glass substrates by reactive radio-frequency magnetron sputtering at low temperature (150 degrees C). X-ray diffraction, spectroscopic ellipsometry and scanning electron microscopy techniques have been employed to asses the structural characteristics of the AlN films. We have investigated both the influence of AlN film's thickness and of the substrate nature on crystallinity. The thicker films present a better c axis alignment, a minimum orientation dispersion of 3.5. being reached for 1 mu m AlN on silicon. The micro-and macrostrain of the AlN lattice relaxes as the film thickness increases. The film deposited onto platinum has the maximum value of tensile strain along c axis. The film on glass exhibited the poorest texturing and the highest defect concentration. From an optical point of view the film deposited on Pt is the denser one and that deposited on glass is the most rarefied. One can conclude that when using a low deposition temperature and a base pressure of similar to 10(-4) Pa the increase of film thickness leads to improved AlN structure on Si or Pt supports.

3070. INFLUENCE OF PREPARATION METHOD ON STRUCTURAL PROPERTIES OF GeSiO NANOSYSTEMS

Authors: Stavarache, I; Lepadatu, AM; Teodorescu, V; Stoica, T; Pasuk, I; Stan, G; Iancu, V; Ciurea, ML

Published: 2010, 2010 INTERNATIONAL SEMICONDUCTOR CONFERENCE (CAS), VOLS 1 AND 2, 80, DOI: 10.1109/SMICND.2010.5650255

GeSiO nanosystems were obtained using two different preparation methods, sol-gel and magnetron-sputtering. Transmission electron microscopy measurements were performed to investigate the films structure. Amorphous and crystalline Ge dots embedded in amorphous silicon dioxide were observed. The Ge concentration in the GeSiO films was by Energy-dispersive X-ray spectroscopy.