Publications

An anomalous temperature T dependence of the field H-on for the onset of the second magnetization peak (SMP) in La1.81Sr0.19CuO4 single crystals (with the external magnetic field H oriented parallel to the c axis) is discussed. While the peak field H-p and the magnetization at H-p have a continuous variation with T, H-on exhibits a sudden decrease with increasing T for T similar to 11 K-15 K. The analysis of the nature of the SMP in La2-xSrxCuO4 single crystals in terms of a simple dynamic energy balance relation suggests that the observed behaviour Could be related to the particular T dependence of the superfluid density in the case of two-band Superconductivity, affecting the T variation of the elastic energy of the vortex system at low H (C) 2009 Elsevier B. V. All rights reserved.

We investigate the differential conductance dI/dV for the interacting T-shape model, using an approach based on the Keldysh formalism and the Lacroix solution for the equation of motion. A peak-dip crossover has been noticed by changing the hybridization between the two dots. For the same model, the combined interaction and interference processes give rise to the Fano-Kondo effect with an interesting crossing point of the isoterms below the Kondo temperature A tentative explanation of these effects is given in terms of the many-body spectral properties of the system.

We investigated the transport properties of a series of composites made of La2/3Sr1/3MnO3 and different copolymers. The temperature dependence of the electrical resistance of the samples is strongly dependent on the nature of the polymers. We found four types of temperature dependences of the electrical resistance: i) simple current dependence of resistivity for poly(methyl-methacrylate-co-styrene) copolymers, ii) single peaked characteristics for poly(acryl amide-co-vinyl acetate), iii) multipeaked dependence found in poly(methyl-methacrylate-co-butadiene) and star type polysiloxane-g-styrene, and iv) current independent characteristics visible in the samples made with linear polysiloxane-based composites.

A switching unit can be defined as the smallest unit that preserves the property of switching in memory materials. Atomic switching unit is discussed, molecular switching units are described and supramolecular units in phase change materials are evidenced and discussed. The "commuton", as basic switching unit, could give more insight into the particular properties of the switching phenomena in various solid materials.

For power applications of superconducting films. the critical current density (J(c)) and the thickness of the film (d) should be as high as possible. Since J(c) decreases with both thickness and magnetic field, artificial pinning centres in addition to natural ones are required to keep J(c) high. The earliest cost-effective method used for introducing artificial pinning centres was the so-called substrate decoration, i.e., growing nanoscale islands (nano-dots) of certain materials on the substrate prior to the deposition of the superconducting thin film. Later on another version of this approach proved to be successful: building up a layered distribution of a second phase using a multilayer deposition (quasi-superlattices). Several materials have been used for the Creation of artificial pinning centres. Here we report on the artificial pinning centres induced in YBCO thick films by substrate decoration and quasi-superlattice approaches using nano-dots of Pd and non-superconducting YBCO. The cross-sectional AFM images show evidence of c-axis correlated columnar defects. These defects significantly contribute to the pinning of magnetic flux and increase critical current in the films. We observed an important shift of the position of the maximum in the thickness dependence of J(c)(B) towards higher thicknesses compared with pure YBCO films by both approaches. A high J(c)(B) in our quite thick films provides a very high total critical current per cm of the film width. Critical current as high as 800 A/cm width was achieved in a 2.4 mu m thick quasi-superlattice film with non-superconducting YBCO nano-dots. (C) 2009 Elsevier B.V. All rights reserved.

We present the preparation, structural, and magnetic properties of a series of Fe-containing borosilicate glasses as a function of the ratio SiO2/Fe2O3 which is ranging from 1.49 to 2.68. The role of nucleators (Cr2O3 and P2O5) was also investigated. X-Ray diffraction has revealed the formation of magnetite as the major or unique crystalline phase. As SEM micrographs have revealed, the addition of P2O5 give rise to a finer structure as compared with Cr2O3. In addition, the same oxide decreases the temperature of structural transition with almost 100 degrees C. The magnetization data reveal a two step transition at low temperatures: a high temperature transition at T-v = 128 K, which we attribute to the Verwey transition, and a low temperature transition at T-s = 48 K which, most likely, is the result of change in the dynamic of the domain motion.

General aspects of the interactions of ions in silicon are investigated: energy lost in electronic and nuclear processes, as well as their consequences, creation of point and extended defects in the crystal structure. The correlations between irradiation ions, their energy, ionization and nuclear energy loss per atom, radius of interaction and spatial extension of the primary damaged region are also investigated.

Sr2FeTaO6 and Sr2Fe0.7Co0.3TaO6 double perovskites, unsupported and supported on gamma-Al2O3 were prepared, characterized and studied in the catalytic combustion of methane, as a test reaction for volatile organic compounds (VOCs) destruction. These mixed oxides, with double perovskite structure, present good catalytic activities, and after their dispersion - 5 % (wt.) - on gamma-Al2O3 support, the reaction rates increased compared with the unsupported samples.

The phase change materials are the most important materials in the class of chalcogenides (combination of chalcogens (S, Se and Te) with metalloids or metals). The outstanding property of these materials is the switching from a high electrical resistivity state to low electrical resistivity state and back under a moderate voltage. The thin film materials are used in computer memories, CD and DVD devices with performing speed and storage capacity. We have studied several thin solid films made of Ge-Sb-Te in order to assess the switching quality of different compositions. In order to systemize the whole class of chalcogenide phase change materials we have investigated the correlation between different crystallo-chemical parameters and the ionicity of the elements. Binary and ternary compounds are distributed into several distinct groups. The most favorable phase change materials are situated in a specific range of mean ionicity and mean glass formation ability. The results give the possibility to design new compositions with better switching properties.

We report a strong dependence of the angular magneto resistance (AMR) on the current density in Y0.47Pr0.53Ba2Cu3O7-delta single crystal above the critical temperature T-c = 13 K for any applied field up to 14 T. We estimated the current dependence from the angular dependence of the top resistance R-top, as measured on the face where the current is applied, and the bottom resistance R-bot as measured on the opposite face. At any temperature, both below and above T-c, R-top decreases as the field becomes parallel to the current and ab-plane with an angle dependence that suggests an important contribution arising from the vortex flow. R-bot evolves from a monotonic to nonmonotonic angle dependence with three minima and two maxima in the angle range 0 - 180 degrees as the temperature increases. For less Pr-doped samples, Y0.58Pr0.42Ba2Cu3O7-delta (T-c = 39 K) and Y0.68Pr0.32Ba2Cu3O7-delta (T-c = 55 K), where the interplane resistivity is much lower, both R-top and R-bot follow the same monotonic angle dependence in all temperature and field range.