National Institute Of Materials Physics - Romania

We report on photoluminescence studies on manganese and copper-doped ZnO nanowire array prepared by template method. The ZnO:Mn:Cu semiconductor grown using the electrochemical technique was characterized by electron paramagnetic resonance (EPR) and optical reflection measurements. Morphology and the structure were observed by SEM and X-ray diffraction. The photoluminescence of this system was correlated with manganese and copper concentration in the ZnO matrix. (C) 2007 Elsevier B.V. All rights reserved.

We present studies of the role of charge fluctuations in transport through a quantum point contact (QPC). Our model of QPC is based on assumption of a specific electronic energy structure with a resonant level below the electronic sub-band. We show that charge fluctuations lead to a dynamical Coulomb blockade effect, which is responsible for reduction of the conductance to the value 2/3 x (2e(2)/h). The evolution of conductance with a magnetic field and as a function of source-drain voltage is presented as well. The conductance plateau at 2/3 x (2e(2)/h) evolves continuously with an increase of the voltage to a 0.8 or 0.4 plateau, depending on the relative position of the resonant state with respect to the Fermi energy at zero bias. Our simple model shows many similarities with experimental characteristics. (C) 2007 Elsevier B.V. All rights reserved.

The corrosion and inhibition behavior of carbon steel in 1 m HCl in the presence of 2-(cyclohexylaminomercapto) benzothiazole (CMB) was investigated using weight-loss measurements, galvanostatic polarization studies and UV-VIS spectrophotometry. The morphology of a surface was analyzed by using Mossbauer spectroscopy. Some samples were examined by scanning electron microscopy. The inhibition efficiency increased with increasing CMB concentration and decreased with increasing temperature of the corrosion medium. The activation energy (E(a)) was determined from Arrhenius equation. The activation enthalpy (Delta H(0)) and the activation entropy (Delta S(0)) were calculated from the diagram of the transition state. The experimental results suggest that the presence of CMB in the solution increases the surface coverage (theta) and therefore, indicates the adsorption of CMB. The adsorption of this compound on the metal surface is found to obey Langmuir's adsorption isotherm. The UV-VIS spectrophotometry shows a decrease of the concentration of CMB in HCl solution after corrosion, indicating that an adsorption process occurs between an organic compound from aqueous phase and the electrode surface. From the Mossbauer spectroscopy studied at this stage, it is expected that the main product of corrosion is a nonstoichiometric amorphous Fe(3+) oxyhydroxide, consisting of a mixture of alpha,beta and gamma-FeOOH, where gamma-FeOOH is the main phase. Copyright (C) 2008 John Wiley & Sons, Ltd.

The effect of electron-electron interactions on coherent transport in quantum dot systems is theoretically investigated by adapting the well-known random-phase approximation (RPA) to the nonequilibrium GreenKeldysh formalism for open mesoscopic systems. The contour-ordered polarization operator is computed in terms of the Green functions of the noninteracting system. We apply the proposed RPA-Keldysh scheme for studying Coulomb-modified Fano lines and dephasing effects in interferometers with side-coupled many-level dots. Our method allows us to treat on equal footing the decoherence induced by the intradot interaction and that by the Coulomb coupling to a nearby system. In the case of a single interferometer, we show that the intradot Coulomb interaction leads to a reduction of-the Fano line amplitude. From the analysis of the interaction self-energy, it follows that this effect originates in inelastic scattering processes in which electron-hole pairs are involved. The interplay between the interdot and the intradot interactions in decoherence is discussed for two nearby identical T-shaped interferometers. We also show that the intradot interaction does not prevent the observation of controlled dephasing due to a nearby charge detector, as long as the latter is subjected to a sufficiently large bias.

The influence of the gate voltage on photoconductivity in P-Si/SiO2/(nano)crystalline PbS, Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET)-like structures is investigated. The effect on the photo-signal in the wavelength range 500-1180 nm is opposite compared to the effect in the wavelength range 1600-2500 nm: a negative gate voltage increases the signal in the short wavelength range and decreases it for the long wavelength range. The opposite is valid for a positive gate bias. An on-off ratio better than 85 times is obtained for the spectral range 500-1180 nm, corresponding to the absorption in p-Si and better than 3.5 times for the spectral range 1600-2500 nm corresponding to the absorption in the (nano)crystal line PbS region, respectively. (c) 2007 Elsevier B.V. All rights reserved.

We report the remote growth of carbon nanowalls in a plasma beam sustained by an expanding argon radiofrequency discharge and injected with a small amount of acetylene in the presence of hydrogen as active gas. The growth process was investigated by varying the mass flow rates, ratio and nature of gases (argon, ammonia/hydrogen, and acetylene), the substrate temperature, and the radiofrequency power. Scanning and transmission electron microscopy, Raman spectroscopy, and electron diffraction methods were used for the investigation of the deposited material. We found that although materials with various morphologies can be generally obtained, nanostructured carbon material with a 2D morphology is obtained with a specific range of parameter values.

HgBa2Can-1CunOy (Hg: 12(n -1)n) phases have the same T-c independent of n and the same vortex melting line for n >= 6. In these materials, there are two types of pancake pairs: those separated by the thick block of (n-2) inner CuO2 planes, which are weakly coupled by the magnetic interaction, and, respectively, those separated by the thin HgBa2Ox charge reservoir layer, which are much stronger coupled by the Josephson coupling. The vortex melting line common to all Hg:12(n-1)n phases (n >= 6), separates two new vortex phases, pancake-molecule-glass, and pancake-molecule-liquid. (c) 2008 Elsevier B. V. All rights reserved.

Scanning Hall probe microscopy with an effective spatial resolution of similar to 1 mu m has been used to investigate the vortex structures in superconducting Bi2Sr2CaCu2O8+delta single crystals in the temperature range 77.3-81.3 K and zero applied field (in the presence of the earth field). The vortex images were obtained in real time mode as the temperature increased slowly for 3.36 h. At 77.3 K, the vortices were arranged in a chain structure. With the increase of the temperature, two jumps in the vortex array occur at 77.3 K, immediately when the temperature starts to rise, and at 79.2 K with a good stability between jumps. The second jump is accompanied by the jump in the average magnetic induction when bundles of 4-5 additional vortices enter the scanning area and the vortex array get disordered. These directly visualized transitions in the vortex lattice are consistent with a vortex creep over the surface barriers at high temperatures. A short movie is presented. (c) 2008 Elsevier B.V. All rights reserved.