National Institute Of Materials Physics - Romania

in the last decade, considerable research effort was directed to the deposition of multilayer films with layer thicknesses in the nanometer range (superlattice coatings), in order to increase the performance of various cutting tools and machine parts. The goal of the present work was to investigate the main microstructural, mechanical and wear resistance characteristics of a superlattice coating, consisting of alternate multilayer ZrN/TiAIN films, with various bilayer periods (5 divided by 20 nm). The coatings were deposited by the cathodic arc method on Si, plain carbon steel and high speed steel substrates to be used as wear resistance surfaces. The multilayer structures were prepared by using shutters placed in front of each cathode (Zr and Ti + Al). The characteristics of multilayer structures (elemental and phase composition, texture, Vickers microhardness, thickness, adhesion, and wear resistance) were determined by using various techniques (AES, XPS, XRD, microhardness measurements, scratch, and tribological tests). A comparison with the properties of ZrN and TiAIN single-layer coatings was carried out.

The effect of ammonium polymolybdate (APM) on the corrosion of carbon steel in a solution of 1 M HCl was studied by weight loss and Mossbauer spectrometry. Inhibition efficiencies (P) have been obtained from weight measurement. The inhibition efficiencies increased with increase APM concentration. Mossbauer spectrometry shows that a superficial compound is formed on the electrode surface as a result of corrosion. (c) 2007 Elsevier B.V. All rights reserved.

This work describes the preparation of HfO2. thin films by the sol-gel method, starting with different precursors such as hafnium ethoxide, hafnium 2,4-pentadionate and hafnium chloride. From the solution prepared as mentioned above, thin films on silicon wafer substrates have been realized by 'dip-coating' with a pulling out speed of 5 cm min(-1). The films densification was achieved by thermal treatment for 10 min at 100 degrees C and 30 min at 450 degrees C or 600 degrees C, with a heating rate of 1 degrees C min(-1). The structural and optical properties of the films are determined employing spectroellipsometric (SE) measurements in the visible range (0.4-0.7 mu m), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The main objective of this paper was to establish a correlation between the method of preparation (precursor, annealing temperature) and the properties of the obtained films. The samples prepared from pentadionate and ethoxide precursors are homogenous and uniform in thickness. The samples prepared starting from chloride precursor are thicker and proved to be less uniform in thickness. Higher non-uniformity develops in multi-deposition films or in crystallized films. A nano-porosity is present in the quasi-amorphous films as well in the crystallized one. For the samples deposited on silicon wafer, the thermal treatment induced the formation of a SiO2 layer at the coating-substrate interface. (C) 2007 Elsevier B.V. All rights reserved.

The mixed oxide system 0.1SnO(2)-0-9 alpha-Fe2O3 (Sn1) was synthesized using the hydrothermal method and characterized using X-ray diffraction (XRD), Mossbauer spectroscopy and transmission electron microscopy (TEM). Sensing properties in both CH4 and CO were recorded as a function of temperature, humidity and concentration. The results were compared with those obtained for SnO2 (Sn10). It has been observed that Sn1 displays superior stability and sensitivity for methane as compared to Sn10. For both Sn1 and Sn10, the sensitivity to methane and carbon monoxide is influenced by temperature. In contradistinction to Sn10, Sn1 presents a reduced sensitivity to water vapors. A model based on the simultaneous evaluation of the electrical resistance and workfunction was elaborated to describe the selectivity of Sn1. (c) 2007 Elsevier B.V. All rights reserved.

The temperature dependence of the ferroelectric hysteresis and capacitance in PbZrO3 epitaxial films with (120)(O) and (001)(O) orientations was investigated in the 4.2-400 K temperature range. It was found that the films with (120)(O) orientation show a mixture of ferroelectric and antiferroelectric phases on the entire temperature range up to room temperature, with the ferroelectric phase more stable at low temperatures. Above room temperature the (120)(O) oriented films seem to behave only as an antiferroelectric material. By contrast, films with (001)(O) orientation show only ferroelectric behavior up to a temperature of about 60 K when the single hysteresis loop splits into a double loop characteristic for antiferroelectrics. Above this temperature the (001)(O) oriented films show only antiferroelectric behavior up to 400 K. The temperature dependence of capacitance and loss tangent clearly shows a maximum at around 16 K in the case of the (001)(O) oriented film. This might be associated with a low temperature ferroelectric-antiferroelectric phase transition. However, this transition is not visible in the (120)(O) oriented films. (C) 2008 American Institute of Physics.

This work reports on recently investigated structural and magnetic properties of three FexOy-SiO2 nanocomposites prepared by the alkoxide route of the sol-gel method. Depending on the presence or absence of catalyst and on its nature (acidic or basic), important differences among the samples have been observed from the point of view of their structure and properties. (c) 2007 Elsevier B.V. All rights reserved.

The capacitance of PbZrO(3)-Pb(Zr(0.8)TiO(0.2))O(3) epitaxial multilayers is significantly enhanced as the number of interfaces increases at the same total thickness of the structure. A possible explanation for this enhancement can be the increase of the dielectric susceptibility due to the presence of some interfacial polarization related, for instance, to trapped charges at the multilayer interfaces. The presented results suggest that capacitance tuning is achievable in antiferroelectric-ferroelectric epitaxial multilayers.

Self-sustained pulsations in the output power of metal-organic chemical vapor deposition grown ridge-waveguide lasers with InGaAs quantum dot active region are reported. The characteristics of the output power pulsations (range, frequency, and modulation depth) are presented. The origin of the pulsations is explained in terms of the properties of the quantum dot active region.

Cluster related defects were investigated by the thermally stimulated current (TSC) method in neutron irradiated n-type Si diodes during 80 degrees C annealing. Three hole traps labeled H (116 K), H (140 K), and H (152 K) proved to have an electric-field-enhanced emission characteristic of Coulombic wells. Their zero field emission rates were deduced describing the TSC peaks with the three-dimensional Poole-Frenkel formalism when accounting for the electric field distribution. As acceptors in the lower half of the gap, these centers have a direct impact on the effective doping of the n-type diodes. They are revealed as causing the long term annealing effects. (c) 2008 American Institute of Physics.

Fundamental and third harmonic ac susceptibility measurements as a function of temperature T, ac magnetic field, and dc magnetic field have been performed on Bi(Pb)SrCaCuO/2223 bulk samples consisting of both Bi2Sr2Ca2Cu3O10+delta (2223) and Bi2Sr2CaCu2O8+delta (2212) phases. Since the chi(1)''(T) peak corresponding to the losses in the weak links between the grains shifts rapidly to lower T and its amplitude is strongly suppressed with increasing the dc magnetic field H-dc, the other peaks related to the losses in the grains become visible. For the samples consisting of single phase 2223, these intragranular peaks are situated near 38 K, 58 K, and 80-88 K (depending on the sample), whereas for the samples consisting of single phase 2212, they are situated near 20 K, 43 K, and 77 K. For H-dc >= 1 kOe, the temperature positions of the intragranular peaks are weakly field dependent. This shows that the transition line determined from the loss peaks behaves like the melting line in two-dimensional (213) systems. Also, as the field increases, the amplitude of the loss peaks can decrease up to their disappearance, suggesting a layer decoupling process. In this way, we show that, above a crossover field of similar to 1 kOe, the vortex lattice in the superconducting grains of polycrystalline samples reproduces the behaviour of the vortex lattice in a quasi-2D object consisting of a set of separated "thin films" with one-, two-, and three-effective-layer thicknesses. For the samples consisting of both 2223 and 2212 phases, three additional peaks were observed, situated near 28 K, 50 K and 75-80 K (depending on the sample). These peaks were attributed to the regions in which the 2212 and 2223 layers alternate. (c) 2007 Elsevier B.V. All rights reserved.