National Institute Of Materials Physics - Romania

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5781 articles found

3701. Superconducting properties of iodine-intercalated Bi2Sr2Ca2Cu3O10+x

Authors: Mihalache, V; Aldica, G; Miu, D

Published: APR 2007, JOURNAL OF SUPERCONDUCTIVITY AND NOVEL MAGNETISM, 20, 272, DOI: 10.1007/s10948-006-0199-y

The superconducting properties of iodine-intercalated high-temperature superconducting Bi2Sr2Ca2Cu3O10+x phase (Bi-2223) were systematically studied. It was found that for samples containing a significant amount of Bi2Sr2CaCu2O8+x , iodine intercalation results in the dramatic decrease of the inter-granular critical current density, as well as a significant decrease of the critical temperature (T-c), the critical current density in the grains (J(cg)), and of the amount of Bi-2223. For samples with a large amount of Bi-2223, T-c changes insignificantly, whereas J(cg) can even increase. We argue that the different behavior of the superconducting parameters is the result of various oxygen concentrations, and we explain the effect of iodine intercalation based on the parabolic dependence between T-c and the number of holes per CuO2 layer. The H(T) curves (determined from the peak position in the loss signal of ac susceptibility) for intercalated samples deviate significantly from the quasi 2D-like behavior, pointing toward an enhancement of the 3D fluctuations of vortices. For the change in the values and dimensionality of the flux pinning in the process of the intercalation, we attempted a qualitative explanation based on the models proposed in literature.

3702. Primary defects in silicon: existence, characteristics, and their role after high fluence irradiation

Authors: Lazanu, S; Lazanu, I; Ciupina, V; Prodan, G

Published: APR 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 817, DOI:

In this contribution, an extensive analysis of the primary defects in silicon: vacancy, interstitial and Si-FFCD is performed. Irradiation studies are a useful tool to study production, characteristics and annealing of defects. The experimental results obtained after high proton fluence irradiation of silicon detectors are used in this paper to understand aspects related to the existence and proprieties of primary defects. Investigations on possible differences induced by irradiation in the lattice of silicon, using transmission electron microscopy analysis, have been started and some first preliminary results are presented.

3703. Light absorption process in CdSxSe1-x doped alumino-phosphate glass

Authors: Stanculescu, A; Stanculescu, F; Elisa, M

Published: APR 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 835, DOI:

We present a study of the effect of the crystallites composition and size on the optical properties of vitreous aluminophosphate matrix doped with CdSxSe1-x crystallites. The influences of the glass matrix composition and, heat treatment temperature and duration on the stoichiometry of the crystalline phase have been investigated by optical methods. We have studied the effect of the sodium oxide contained in the matrix, annealing temperature variation from 425 degrees C to 475 degrees C and duration variation from 2 h to 6 h on the light absorption process, evaluating an optical band gap energy between E-g=1.74 eV and E-g=2.29 eV associated with changes in the composition of the crystallites. The blue shift of the absorption edge observed in samples containing Na2O annealed at 425 degrees C for 4 h or at 450 degrees C for 2 h was attributed to a variation in the crystallites' composition because their size is not favourable to the quantum confinement. We have also investigated the effect of individual CdS and CdSe clusters on the absorption properties of the aluminophosphate glass and on the process of zinc incorporation in the crystalline phase. We have made some assumptions concerning the effect of the aluminophosphate glass matrix on the direct band to band light absorption mechanism characterising the II-IV bulk semiconductor.

3704. Short-circuit photocurrent in epitaxial lead zirconate-titanate thin films

Authors: Pintilie, L; Vrejoiu, I; Rhun, GL; Alexe, M

Published: MAR 15 2007, JOURNAL OF APPLIED PHYSICS, 101, DOI: 10.1063/1.2560217

Photovoltaic properties of the metal-ferroelectric-metal structures, having SrRuO3 metal oxide electrodes and Pb(Zr,Ti)O-3 (PZT) as ferroelectric layer, are investigated by the short-circuit photocurrent (SC-PHC) in the 200-800 nm wavelength domain. The band-gap dependence on the Zr content was determined from the spectral distribution of the SC-PHC signal. It was found that the band-gap value increases linearly with the Zr content, from about 3.9 eV to about 4.4 eV. It is shown that the sign and the magnitude of the signal depend on the internal bias and on the spontaneous polarization direction and value. The photocurrent describes a hysteresis loop similar to that of the ferroelectric polarization and can be used as a nondestructive readout of the nonvolatile memories based on PZT films. The existence of a significant SC-PHC signal at wavelengths corresponding to subgap energies is attributed to the presence of charged, deep levels in the forbidden band. It is also shown that the epitaxial PZT films have the potential for solid-state UV detectors, with current responsivity as high as 1 mA/W. The results are not entirely consistent with a bulk photovoltaic effect and are discussed in the frame of a Schottky barrier model for the metal-ferroelectric interface. (c) 2007 American Institute of Physics.

3705. Growth of ZrSnTiO thin films by pulsed-laser deposition

Authors: Nistor, M; Ioachim, A; Gallas, B; Defourneau, D; Perriere, J; Seiler, W

Published: MAR 7 2007, JOURNAL OF PHYSICS-CONDENSED MATTER, 19, DOI: 10.1088/0953-8984/19/9/096006

The formation of ZrSnTiO thin films by pulsed-laser deposition has been studied. By the complementary use of Rutherford backscattering spectrometry, x-ray diffraction and scanning electron microscopy, the composition, crystalline structure and surface morphology of the films were investigated. The optimum conditions for the growth of dense, stoichiometric and crystalline films were determined, i.e. substrate temperature of 700 degrees C and oxygen pressure in the 10(-3)-0.1 mbar range. Such ZrSnTiO films present the classical orthorhombic structure for growth on Si substrates, while the use of MgO single crystal substrates leads to the formation of epitaxial ZrSnTiO films with a tetragonal structure. This previously unobserved ZrSnTiO crystalline phase obtained in thin film form is the result of an epitaxy stabilization effect, and presents improved optical properties as shown by the results of spectroscopic ellipsometry measurements. Moreover, the films grown at 700 degrees C under low oxygen pressure (< 10(-5) mbar) were composed of a Sn rich surface layer superimposed on an understoichiometric zirconium titanate oxide film near the substrate. This last layer, which crystallizes in a cubic structure and has never been reported in bulk material, could be related to the presence of oxygen vacancies in the films grown in these conditions.

3706. Silicon detectors: Damage, modelling and expected long-time behaviour in physics experiments at ultra high energy

Authors: Lazanu, I; Lazanu, S

Published: MAR 1 2007, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 572, 299, DOI: 10.1016/j.nima.2006.10.280

In this contribution, the structural modifications of the material and the degradation of devices is modelled and compared with the experimental data for more resistivities, temperatures, crystal orientations and oxygen concentrations, considering the existence of the new primary fourfold coordinated defect, besides the vacancy and the interstitial. Some estimations of the behaviour of detectors in specific environments at the next generations of high-energy physics experiments as LHC, SLHC, VLHC, or ULHC are done. (c) 2006 Elsevier B.V. All rights reserved.

3707. Optical characterization of the phosphate glasses containing pair transition ions

Authors: Elisa, M; Grigorescu, C; Vasiliu, I; Bulinski, M; Kuncser, V; Predoi, D; Filoti, G; Meghea, A; Iftimie, N; Giurginca, M; Onose, C

Published: MAR 2007, OPTICAL AND QUANTUM ELECTRONICS, 39, 531, DOI: 10.1007/s11082-007-9097-1

The paper deals with optical and electronic properties of the aluminophosphate glasses containing Fe-Mn and Fe-Cr ion pairs in different concentration. The influence of the mixed alkali ions over the electronic properties has been investigated. The optical behavior (optical transmission) of the glass samples has been studied by UV-VIS spectroscopy and the refractive index dependency on wavelength has been discussed. The transmission spectra show features specific for the doping transition ions (TM), revealing different oxidation states of iron (Fe2+/Fe3+), manganese (Mn2+/Mn3+) and chromium (Cr3+/Cr6+) in the vitreous network. Mossbauer spectroscopy offers information regarding the TM oxidation states, redox processes and the iron coordination symmetry in the vitreous network. In the case of Fe-Mn doped glasses, the percentage of Fe2+ is about 40% and a doubled iron content leads to an increasing of Fe2+ percentage up to 53%. The replacing of lithium ions by natrium ions (mixed alkali effect) provides an increasing of the Fe2+ percentage up to 56%. The occurrence of the tetrahedral or octahedral symmetry of Fe(2+)supercript stop ions bonded by O2- ions depends on the transition ion nature and Li+/Na+ ratio. Infrared absorption spectra of the pair transition ions-doped aluminophosphate glasses reveal optical phonons specific for the phosphate glass matrix.

3708. Study of non catalytic oxidehydrogenation of isobutane in an integral reactor

Authors: Grecu, MN; Burducea, G; Grecu, V; Moldovan, R; Beica, T; Zgura, I

Published: MAR 2007, REVUE ROUMAINE DE CHIMIE, 52, 281, DOI:

X-band ESR spectra of the calamitic and discotic lyotropic nematic phases in sodium dodecyl sulphate (SDS)/decanol/water system, doped with paramagnetic nitroxide free radicals are analyzed in this paper. The studied temperature range was chosen to include phase transitions of the lyotropic systems. The variation of the surfactant hydrocarbon chains ordering versus temperature is determined by the hyperfine splitting tensor (,4) and the spectroscopic splitting tensor ((g) under bar) anisotropies. The temperature dependence of the molecular order parameters for both lyotropic systems and the corresponding angular fluctuations are presented and discussed.

3709. Abnormal anti-Stokes Raman spectra of single walled carbon nanotubes raised from coherent anti-Stokes Raman scattering and optical cooling processes

Authors: Baltog, I; Baibarac, M; Mihut, L; Lefrant, S

Published: MAR 2007, DIGEST JOURNAL OF NANOMATERIALS AND BIOSTRUCTURES, 2, 198, DOI:

For the single-walled carbon nanotubes, the higher values of anti-Stokes/Stokes Raman intensity ratio (I(as)/I(s)) then the predictions of the Maxwell-Bolzmann formula indicates a CARS emission resulting from a wave mixing process between the incident laser light (omega(l)) and Stokes Raman light (omega(s)) generated by a SERS mechanism. The weaker value of (I(as)/Is) observed at resonant excitation of semiconducting nanotubes in the E(22)(S) van Hove state, relates a quantum cooling process occurred during the relaxation of the E22S excited state in two steps-by phonon emission from E(22)(S) to E(11)(S) followed by a spontaneous luminescence emission at E(11)(S).

3710. Ferroelectric polarization-leakage current relation in high quality epitaxial Pb(Zr, Ti)O-3 films

Authors: Pintilie, L; Vrejoiu, I; Hesse, D; LeRhun, G; Alexe, M

Published: MAR 2007, PHYSICAL REVIEW B, 75, DOI: 10.1103/PhysRevB.75.104103

Leakage current measurements were performed on epitaxial, single-crystal quality Pb(Zr,Ti)O-3 films with thicknesses in the 50-300 nm range. It was found that the voltage behavior of the leakage current has a minor dependence on thickness, which rules out the space-charge limited currents as main leakage source. Temperature-dependent measurements were performed to obtain more information on the transport mechanism through the metal-ferroelectric-metal (MFM) structure. The results are analyzed in the frame of interface-controlled Schottky emission. A surprisingly low value of only 0.12-0.13 eV was obtained for the potential barrier, which is much smaller than the reported value of 0.87 eV [I. Stolichnov , Appl. Phys. Lett. 75, 1790 (1999)]. The result is explained by the effect of the ferroelectric polarization on the potential barrier height. The low value of the effective Richardson constant, of the order of 10(-7)-10(-6) A/cm(2) K-2, suggests that the pure thermionic emission is not the adequate conduction mechanism for epitaxial MFM structures. The true mechanism might be interface-controlled injection, followed by a low mobility drift through the film volume.