3861
Hydroxyapatite-iron oxide bioceramic prepared using nano-size powders
Predoi, D; Barsan, M; Andronescu, E; Vatasescu-Balcan, RA; Costache, M
NOV 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 3613
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The hydroxyapatite (HAp) is an important material for orthopedics and dentistry applications. In the present study a simple method was tried for added the iron oxide nanoparticles into HAp so as to establish and induce a biocompatibility. In the research the mechanism of the coated of iron oxide with HAp would also be described by the analysis of X-ray diffractometer, scanning electron microscope and Fourier transformation infrared. Osteoblast cells were permanent monitored to detect any possible influence due to samples that might alter the cell growth, viability and proliferation.
3862
Interfacial tension of some liquid crystals in the cyanobiphenyl series at the interface with glycerol
Beica, T; Moldovan, R; Zgura, I; Frunza, S
NOV 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 3627
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The temperature dependence of the interfacial tension for three compounds from the homologous series of alkylcyanobiphenyl (nCB), 5CB, 7CB and 8CB, at the interface with glycerol was measured in a temperature range from mesomorphic to isotropic phase. The drop shape method of measure was used. The interfacial tension of all the studied liquid crystals presents an anomalous behaviour with maximum and small upward jumps at the phase transitions, in rising temperature.
3863
Multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing
Mokkapati, S; Du, S; Buda, M; Fu, L; Tan, HH; Jagadish, C
NOV 2007, NANOSCALE RESEARCH LETTERS, 2, 553
DOI: 10.1007/s11671-007-9097-x
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We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation, followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics (lasing-spectra, threshold currents and slope efficiencies) of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots.
3864
High k materials used to manufacture miniaturised dielectric antennas for military applications
Nicolaescu, I; Ioachim, A; Toacsan, I; Radu, I; Banciu, G
NOV 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 3597
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The microwaves are used for both civilian and military applications for communication and detection. Due to the emerging applications and the need for more bandwidth as well as for high speed there is a strong competition for ultra high frequencies devices. As it is know the size of different kind of microwave components is in a certain relation with the wavelength divided by root square of the dielectric permittivity. So the size of microwave component can be decreased by increasing the dielectric permittivity. Dielectric materials based on TiO2 are recommended for applications in electromagnetism and optics due to their nonlinear properties, to high value of the dielectric permittivity and their temperature behavior. The paper describes very shortly the technology applied to manufacture high dielectric permittivity materials based on TiO2 and microwave devices designed with this. In addition, the experimental data measured for a dielectric antenna are presented.
3865
Acylation of different amino derivatives with fatty acids on UL-MFI-type catalysts
Musteata, M; Musteata, V; Dinu, A; Florea, M; Hoang, VT; Trong-On, D; Kaliaguine, S; Parvulescu, VI
NOV 2007
DOI: 10.1351/pac200779112059
3866
(Te/SnSe2)(3) multilayers deposited by pulsed laser deposition. Structure and gas sensing properties
Lorinczi, A; Sava, F; Tomescu, A; Simion, C; Socol, G; Mihailescu, IN; Popescu, M
NOV 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 3492
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Multilayers made of alternative layers of composition SnSe2 and tellurium (three pairs) have been prepared by pulsed laser deposition (PLD). The complex films have been investigated by X-ray diffraction. After a special annealing in oxygen fluence at various temperatures, up to 620 degrees C, the films were investigated both by X-ray diffraction and for gas sensing. Gas sensing properties were tested for water vapours, carbon monoxide (CO) and methane (CH4). After annealing at high temperature, the structure of the multilayer samples show oxide phases like TeO2, SnO2 and a mixed oxide ternary phase SnTe3O8. The annealed multilayers show good sensing properties to water vapours and CO gas.
3867
The study of the passive film formed on the surface of 316L stainless steel in artificial physiological media
Tutunaru, B; Patru, A; Bibicu, I; Preda, M
NOV 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 3404
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This work is aimed at providing a better understanding of the biocompatibility of 316L stainless steel in the human body, where various biomolecules are able to bind metal ions and convey them from the surface of orthopaedic implant to various parts of the body. The passivation behavior of orthopaedic 316L implant was studied by associating the electrochemical methods (Differential Pulse Voltammetry and Cyclic Voltammetry) with the surface M(Mossbauer spectroscopy as a function of type of physiological media; glucydic, proteic and lipidic. Was studied the electrochemical behaviour of steel in three artificial media: Aminosteryl, Intralipid and Kabiven in the concentrations corresponding to the administration dosages. The results were discussed in the context of the formation of passive film which stability strongly depends on the corrosive activity of the physiological media in the order: Aminosteryl < Kabiven < Intralipid.
3868
Crystallization of PLD deposited ITO thin films by thermal treating in various gaseous environments
Viespe, C; Grigoriu, C; Popescua, M; Sava, F; Lorinczi, A; Velea, A; Zamfira, S
NOV 2007, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 9, 3566
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ITO films of composition (In2O3)(0.9) - (SnO2)(0.1) have been prepared by pulsed laser deposition (PLD).The films were found to be amorphous. The structure and evolution of the films during annealing in air, oxygen atmosphere and reducing atmosphere (CO2) have been investigated by X-ray diffraction. The films annealed in ambient atmosphere start to crystallize under 250 degrees C annealing temperature. The films treated in oxygen atmosphere crystallize at higher temperature (similar to 300 degrees C).
3869
Growth of stacked heterostructures of SIS-type with S=YBCOor BSCCO and I = (Ba, Ca) CuO2 or (Sr, Ca) CuO2
Endo, K; Badica, P
NOV 2007, SUPERCONDUCTOR SCIENCE & TECHNOLOGY, 20, S436
DOI: 10.1088/0953-2048/20/11/S25
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We investigated MOCVD growth of c-axis two-layer and three-layer stacked heterostructures on (100) SrTiO3 of SI, IS or SIS type. S denotes high temperature superconductor thin films of YBa2Cu3O7 (Y-123), Bi2Sr2Ca2Cu3O10 (Bi-2223) or Bi2Sr2CaCu2O8 (Bi-2212), while I stands for insulating thin films of (Ba, Ca) CuO2 or (Sr, Ca) CuO2. X-ray diffraction, atomic force microscopy and measurements of resistivity versus temperature were performed after the deposition of each layer. The best results, suitable for further device fabrication, were obtained for the SIS structure (100) SrTiO3/Bi-2223/(Sr, Ca) CuO2/Bi-2212. Similar structures with I = (Ba, Ca) CuO2 have shown higher impurity phases and lower superconducting quality of the top superconducting layer. For two-layer or three-layer structures, Bi-2223 as a top layer could not be obtained and, instead, a phase with Bi-2212 formed. Structures with (100) SrTiO3/Y-123/(Sr, Ca) CuO2/Y-123 or (100) SrTiO3/Y-123/(Ba, Ca) CuO2/Y-123 were also promising, but a current leak often occurred due to greater roughness. Structures with Y-123 are less sensitive to growth temperature than those with BSCCO.
3870
Investigation of the properties of indiurn tin oxide-organic contacts for optoelectronic applications
Stanculescu, A; Stanculescu, F
OCT 15 2007, THIN SOLID FILMS, 515, 8737
DOI: 10.1016/j.tsf.2007.03.120
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This paper presents some investigations on the electrical transport properties of ITO/single (double) layer organic semiconductor (m-DNB, benzil, PTCDA, Alq3) contacts in SIS-like (ITO/organic/Si) and MIS-like (ITO/organic/metal) heterostructures. The I-V characteristics have emphasised the injection properties of different contacts and the effect of space charge limited currents in correlation with the type and preparation conditions of the contacts. We have studied the influence of the type of contact (In/ITO; In/Al) on the electrical conduction in Alq3/PTCDA/Si/In heterostructure. In a planar grid contact configuration for In/Al/PTCDA/Al/In structure we have observed the effect of the low electric field on the shape of the I-V characteristic. (c) 2007 Elsevier B.V All rights reserved.