Publications

Silicon detectors will be used in the next generation of experiments in high energy physics and bulk damage is the main limitation in their utilisation. Although silicon is the most studied semiconductor, and the studies of defects in silicon have a long history, until now it is not completely established what are all primary defects in silicon, and what are their properties. In this contribution we investigate the new perspective in understanding fundamental phenomena in silicon and implications for the damage of detector characteristics due to the existence of the new primary fourfold coordinated defect, with a lower value of the formation energy in respect to the "classically" known vacancies and interstitials. The effects of its existence at device level are investigated, and possible consequences for the detectors in the next generation of experiments are discussed.

The effect of ammonium polymolybdate (APM) on the corrosion of carbon steel in a solution of 1M HC1 was studied by weight loss, electrochemical measurement and Mossbauer Spectrometry. Inhibition efficiencies (P) were obtained from weight measurement and galvanostatic polarization. The inhibition efficiencies increased with concentration, but decreased with temperature. Free energies of activation (E-a for the inhibition processes were estimated from rate constant data obtained at different temperatures and different concentration of APM. Mossbauer spectrometry shows that a superficial compound is formed on the electrode surface as a result of corrosion.

Magnetic iron oxide nanoparticles have a great potential in various applications in biomedical research and technology. Iron oxide particles such as magnetite (Fe3O4) is by far the most commonly employed magnetic materials for biomedical applications. Bioceramic composites were obtained by combining the magnetite with two biocompatible components (hydroxyapatite and bioglass). Their thermal behaviour has been studied by thermal analysis (DTA and TG). The interaction of iron oxide with the bioceramic matrix has been investigated using IR spectroscopy.

Samples of (Bi,Pb)(2)Sr2Ca2Cu3O10 (Bi(Pb)-2223) phase have been fabricated from two different oxide precursors with the same stoichiometry, synthesized by solid state reaction in the air at 815 degrees C for 20 h. The first precursor was prepared by mixing Bi2O3, PbO, SrCO3, CaCO3 and CuO powders, while the second one through mixing Bi2O3 and PbO with Sr2Ca2Cu3Ox produced from SrCO3, CaCO3 and CuO powders. Pellets from the two precursors were prepared in the same conditions; heat treatment time was varied and intermediate grindings were applied. Although the maximum attained Bi(Pb)2223 phase amount was about 50% and above 90% in the samples from the two precursors, respectively, the samples from the first precursor have generally shown better superconducting properties such as the critical temperature from resistivity measurements and intragrain critical current J(cg) from magnetic susceptibility measurements. For our particular case the influence of the final heat treatment is relatively low and at the same time the precursor plays a major role in controlling growth processes and final superconducting properties. Lower room-temperature Seebeck coefficient of the thermoelectric power for the samples fabricated from the first precursor suggests that one mechanism through which this control is realized might be the modification of the oxygenation level in the samples produced from different precursors. It was also found that for the samples prepared from the two precursors, intermediate grinding after 110h or more of heat treatment enhances density, almost does not influence J(cg) (or slightly improves it), decreases T-c, and does not influence significantly the amount of Bi(Pb)-2223 phase.

The problem of the thickness dependence of the dielectric constant, as well as the extrinsic contributions to its value, is analyzed for the case of epitaxial Pb(Zr,Ti)O-3 (PZT) thin films. It is shown that the frequency dependence of the measured capacitance is best simulated by an equivalent circuit incorporating the trap-containing capacitance of a Schottky contact. The thickness dependence of the dielectric constant, calculated using the formula of a plane capacitor, appears to be an extrinsic effect due to the interface phenomena in the metal-ferroelectric-metal structure. The intrinsic dielectric constant of the PZT material seems to be thickness independent and of low value of about 30-40. This is closer to the values estimated from Raman measurements or from quantum theories of ferroelectricity. The thickness independence is also proven by piezoresponse force microscopy measurements. The presence of traps is evidenced by the presence of a photovoltaic effect at subgap wavelengths.

Field Assisted Sintering Technique (FAST) is currently used to consolidate ceramic, metal and composite powders. This method combines a pulsed electrical current with simultaneous application of an external pressure. In this article we report fabrication by FAST of high density MgB2 ceramic with addition of 5% SiC and 5% B4C. The influence of sintering conditions such as temperature and time on bulk density, morphology and superconducting properties of the samples was investigated. All samples had bulk density of more than 90% of the theoretical one and the same critical temperature T-c = 38.5 K from magnetisation measurements. These preliminary results suggest that FAST is a promising method for processing of MgB2 superconductor.

Fine-grain BaTi0.87Sn0.13O3 (BTS13) powder was synthesized from an oxalate precursor and used to prepare sintered ferroelectric BTS13 ceramics. The evolution of the morphology and structure of a BTS13 precipitate precursor as a function of temperature was analyzed. We compare the sintering behavior as well as the dielectric properties of the BTS13 ceramics obtained using uniaxial and cold isostatic pressing.

Results regarding the growth of carbon nanostructures by using a low-pressure expanding radiofrequency plasma jet are reported. The growth was performed in an argon plasma injected with acetylene precursor, in the presence of ammonia or hydrogen, on a substrate covered with nickel or cobalt catalysts. Various forms of nanostructured carbon material were obtained, depending on the catalyst size, ammonia or hydrogen / acetylene ratio and substrate temperature. The results exemplified in the paper describe nickel nanoparticles coated in highly ordered graphite shells, granular carbon, two dimensional carbon nanoflakes, nanowires and nanorods.

High permittivity dielectric materials (epsilon(r) > 20) are used in mobile communications due to low dielectric loss in microwaves and millimeter waves, specific temperature dependence of the dielectric properties and high dielectric permittivity, which allows device miniaturization. Preparation of Ba(Zn1/3Ta2/3)O-3 ceramic materials (BZT) with optimal properties for applications requires special thermal treatments due to the difficult control of the cationic ordering. The samples were prepared by using solid-state reaction, doped with Eu2O3, ZrO2, Nb2O5, or Al2O3-Y2O3 and sintered at the following temperatures: 1400, 1500, 1550 degrees C for 2 or 3 hours. In order to improve the microwave properties, annealing treatments at 1410 degrees C for 10h or 30h were performed on ceramic samples. XRD was used for compositional and structural characterization. The XRD data allowed the study of the transition from the pseudo-cubic cell to the hexagonal cell. The dielectric properties were measured in the microwave range and were correlated with additives and structural properties. Sintering temperatures greater than 1500 degrees C are required for doped BZT compositions, in order to obtain high dielectric constant (epsilon(r) similar to 28) and high quality factor (Q = 10000 at 10 GHz).

Photoluminescence (PL) spectra recorded at room temperature (RT) in polycrystalline BaFCI:Eu2+ X-ray storage phosphor have shown the europium associated luminescences, a broad luminescence band at 385nm (3.22eV) with a 3.3 +/- 0.1 mu s PL lifetime accompanied by a luminescence line at about 368nm (3.37eV). The energy difference Delta EB-L =226cm(-1) between the two excited levels from which the europium associated band and line luminescences took place was computed. An additional broad luminescence band at about 425nm (2.92eV) with 0.7 +/- 0.1 mu s PL lifetime has been attributed to the europium luminescence perturbed by an impurity. Time resolved spectroscopy measurements have shown that no other impurity luminescences (like oxygen-vacancy centres) can be observed at RT except the europium associated ones.