National Institute Of Materials Physics - Romania

Precipitate-free thin films of multicomponent materials (e.g. superconductors) have been successfully grown (see Figure) on substrates onto whose surfaces artificial steps have been generated. The steps had widths that were equal to twice the migration length of the atomic species being deposited on the films. The resulting clean, high-quality films were due to the gathering of precipitates at the step edges, where the free energy is lowest.

Hydroxyapatite (HA) thin films has been successfully deposited by Nd:YAG laser ablation lambda = 532 nm. The morphology and microstructure of the deposited layers was studied by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and high resolution electron microscopy (HREM). Polycrystalline HA films were directly obtained with the substrate at 300 degreesC and without introducing water vapors in the deposition chamber. Electron paramagnetic resonance (EPR) measurements show that the oxygen stoichiometry in the HA films is also maintained. Depositions performed at lambda = 335 nm laser wavelength and 300 degreesC substrate temperature resulted in polycrystalline layers of mixed composition of HA and tricalciumphosphate (TCP). (C) 2004 Elsevier Ltd. All rights reserved.

Nonmonotonic current transients at constant temperature, following a pulsed charge injection, have been observed in silicon diodes heavily irradiated with gamma rays. The features of the transients have been studied at different temperatures and using various reverse biases. The particular shape of the measured transients is interpreted, with the help of numeric simulations, in terms of a strong time dependency of the space charge density due to the discharge of radiation induced deep traps. In particular, a nonmonotonic transient is generated if the discharge of a dominant trap determines the change of the space charge sign (type inversion). In this case the active volume of the sample, from which the current is collected, is increased during the discharge and causes the sample to become fully depleted for a short time. During this time interval the active volume reaches its maximum value and a peak is produced in the transient shape. The measurement of this peak provides a sensitive way to detect type inversion in semiconductor devices and to determine the responsible energy levels. The correlation of nonmonotonic transients with thermally stimulated current spectra and the distortion produced in deep level transient spectroscopy spectra are discussed in detail.

Coulomb correlations in the optical spectra of semiconductor quantum dots are investigated using a full-diagonalization approach. The resulting multi-exciton spectra are discussed in terms of the symmetry of the involved states. Characteristic features of the spectra like the nearly equidistantly spaced s-shell emission lines and the approximately constant p-shell transition energies are explained using simplified Hamiltonians that are derived taking into account the relative importance of various interaction contributions. Comparisons with previous results in the literature and their interpretation are made.

Our present work investigates the structural properties of bulk NiMnSb prepared by growth from the melt, using various thermal regimes. We studied the compositional behaviour of the polycrystalline material obtained from stoichiometric 1: 1:1 and respectively off-stoichiometric melts. The latter samples were grown with Mn excess up to 10% and respectively Ni deficiency between 2 and 10%. The X-ray diffraction and the Scanning electron microscopy complement each other in the characterisation of the phases occurring in the samples. The synthesis of NiMnSb starting from an initially stoichiometric mixture associated with a thermal treatment presenting plateaus gives the best results. Also, it seems that the presence of an excess of Mn is not sufficient to prevent the occurrence of the NiSb stray phase.

The atomic ordering of the amorphous diamond-like carbon at the scale larger than short-range order is directly related to the characteristics of the array of interstitial voids. The large interstitial voids are responsible for the first diffraction peak, while the smaller ones (second and third order size of the voids) are responsible especially for the intensity and position of the second peaks in the interference function (structure factor).

Two-dimensional (2D) arrays of nanometre scale holes were opened in thin SiO2 layers on silicon by electron beam lithography and chemical etching. Oxidized silicon wafers with a 5 nm thick SiO2 layer on top were used in this respect. Pattern transfer involved either only removal of SiO2 or a two-step process of oxide removal and anisotropic silicon chemical etching to form nanometre scale silicon V-grooves. The size of the holes in the photoresist layer varied in the range 40-80 nm, depending on the exposure dose used. The smallest holes in the oxide were about 50 nm in diameter, while in V-grooves the smallest width was approximate to70 nm. 2D arrays of Ge dots or Ge/Si hetero-nanocrystals were selectively grown on these patterned silicon wafers. In small windows only one Ge island per hole was nucleated.

The photoluminescence (PL) dynamics of terbium-exchanged zeolites X was investigated upon laser excitation at 355 nm. The results evidenced the presence of at least two terbium main environments with PL lifetimes varying between 391-411 and 753-770 mus. The two-site nature of terbium distribution in zeolites X permitted a quantitative analysis of the migration process of terbium ions inside the pores and cavities upon dehydration in air at 200 degreesC. Besides the increase of the PL lifetimes with about 30% and 80% compared to those of the hydrated zeolite, a fraction of almost 30% of terbium ions was estimated to migrate from the supercages to the neighboring sodalites or hexagonal prisms. Our results evidenced for the first time the capability of time-resolved luminescence spectroscopy in quantitatively tracking for the intrazeolitic migration of lanthanides. (C) 2004 Elsevier B.V. All rights reserved.

In-plane angular magnetoresistivity Deltarho(ab)(anis) measurements were made on Y1-xPrxBa2Cu3O7-delta single crystals in the pseudogap region. For xgreater than or equal to0.2 single crystals, Deltarho(ab)(anis)(theta) displays a deviation from the typical quasiparticle contribution (proportional tosin(2)theta) for temperatures smaller than a certain value T-phi in the pseudogap region. This deviation is consistent with a flux-flow type contribution to angular magnetoresistivity, indicating the presence of vortexlike excitations above the zero-field critical temperature in the pseudogap region.