National Institute Of Materials Physics - Romania
Publications
4901. Experimental evidence of deep electron and hole trapping levels in high fluence proton irradiated p-n Si junctions using optical charging spectroscopy
Published: JAN 11 2000, NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 439, 227, DOI: 10.1016/S0168-9002(99)00887-6
4902. The Mossbauer and magnetic resonances investigations of structural phase transitions in K2ZnCl4 crystals
Published: JAN 2000, EUROPEAN PHYSICAL JOURNAL B, 13, 233, DOI: 10.1007/s100510050027
4903. Crystal-chemistry aspects and electric-field-gradient (EFG) dispersion in Ca-gallogermanate-type structures studied by Mossbauer spectroscopy
Published: JAN 2000, EUROPEAN PHYSICAL JOURNAL B, 13, 81, DOI: 10.1007/s100510050011
4904. Experimental investigation of the nonlinear optical response in Fe : PVA
Published: JAN 2000, JOURNAL OF MATERIALS SCIENCE LETTERS, 19, 28, DOI: 10.1023/A:1006739412409
4905. Application of experimental performance criteria for optimal design of angular dispersive powder diffractometers
Published: 2000, EUROPEAN POWDER DIFFRACTION, PTS 1 AND 2, 321-3, 161, DOI: 10.4028/www.scientific.net/MSF.321-324.156
4906. Magneto-thermoelectric alloys obtained by electrodeposition
Published: 2000, JOURNAL OF OPTOELECTRONICS AND ADVANCED MATERIALS, 2, 720, DOI:
4907. Grain-size refinement in Al-Mn-Ce rapidly-quenched alloys
Published: 2000, METASTABLE, MECHANICALLY ALLOYED AND NANOCRYSTALLINE MATERIALS, PTS 1 AND 2, 343-3, 32, DOI: 10.4028/www.scientific.net/MSF.343-346.27
4908. The influence of the material constants and mass-loading on coupling coefficient of monolithic filters
Published: 2000, PIEZOELECTRIC MATERIALS: ADVANCES IN SCIENCE, TECHNOLOGY AND APPLICATIONS, 76, 247, DOI:
4909. Strength of memory-induced anchoring of 5CB on bare untreated ITO
Published: 2000, MOLECULAR CRYSTALS AND LIQUID CRYSTALS, 352, 460, DOI:
4910. Optical characterization of dielectric borophosphosilicate glass
Published: APR-MAY 2000, MICROELECTRONICS RELIABILITY, 40, 620, DOI: 10.1016/S0026-2714(99)00291-7
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