Publications

We theoretically investigate the spectral and quantum transport properties of two-dimensional heterostructures build up of different topological materials. Surprising behavior arises due to particular tuning of the edge states, provided by internal symmetries or an external magnetic field, in the different constituents of the heterostructure. Specifically, we use the Chern-type topological insulator and the Weyl semimetals with one or two interfaces interposed between these systems. The energy spectrum may contain gaps which exhibit edge states of alternating chirality or, on the contrary, of a given chirality everywhere in the spectrum. Then, the calculation predicts that the quantum Hall effect may lack the negative plateaus or show asymmetric plateaus in the lower and upper part of the spectrum. Also, the channel distribution on the finite size system with interfaces and attached leads may give rise to fractional values of the quantum Hall resistance. The calculations are based on a diatomic lattice model, with hopping to the nearest-and next-nearest-neighbors, exposed to an internal periodic flux (of Haldane-type), and also to an external magnetic field.

In this study, stannite, Cu2FeSnS4 (CFTS), absorber films were obtained by electrodeposition on Molybdenum-coated soda-lime substrates, followed by sulfurization treatment at certain temperatures in the 400-550 degrees C range. The purposes of this work were to control the manufacturing of CFTS films with good stoichiometry, high crystallinity and to study the annealing temperature impact on CFTS films properties. The X-ray diffraction and the Raman spectroscopy measurement distinguished the CFTS phase formation, with a presence of SnS2 secondary phase. The energy dispersive spectroscopy results reveal compositional differences between samples as well as the in-depth gradients. The photoluminescence emission band around 1.35-1.40 eV is slightly below the direct bandgap inferred from the conventional spectroscopy (diffuse reflectance). X-ray photoelectron spectroscopy results indicate clearly a high amount of Sn on the surface. The Conversion Electron Mossbauer unveiled the presence of Fe in the chalcogenide unit cell. The electrochemical characteristics of the synthesized films are also given. (c) 2022 Elsevier B.V. All rights reserved.

We derive the thermal noise spectrum of the longitudinal and transverse electric field operator of a given wave vector starting from the quantum-statistical definitions and relate it to the frequency and wave vector dependent complex conductivity in a homogeneous, isotropic system of electromagnetic interacting charged particles in the frame of the non-relativistic QED. No additional assumptions except the validity of linear response are used in the proof. The Nyquist formula for vanishing frequency, as well as the noise spectral density of Callen-Welton follow as byproduct. Furthermore we discuss also the noise of the photon occupation numbers.

In this work, new optical evidences concerning the changes induced of the UV light on pantoprazole sodium (PS), in solid state and as aqueous solution, are reported by UV-VIS spectroscopy, photoluminescence (PL), Raman scattering and FTIR spectroscopy. New evidences concerning the products of the PS photodegradation pathways are reported by the correlated studies of thermogravimetry and mass spectrometry. The influence of the excipients and alkaline medium on the PS photodegradation is also studied. New aspects regarding the chemical mechanism of the PS photodegradation in the presence of the water vapor and oxygen form air and the alkaline medium are shown. Our results confirm that the PS photodegradation induced of the water vapors and oxygen from air leads to the generation of 5-difluoromethoxy-3H-benzimidazole-2-thione sodium, 5-difluoromethoxy-3H-benzimidazole sodium, 2-thiol methyl-3, 4-dimethoxypyridine and 2-hydroxymethyl-3, 4-dimethoxypyridine, while in the alkaline medium, compounds of the type of the 2-oxymethyl-3,4-dimethoxypyridine sodium salts are resulted.

The full knowledge of the charge storage mechanisms occurring in complex composite electrodes is key for the straightforward development of advanced electrochemical capacitors. In this work, hybrid electrodes composed of reduced graphene oxide, multiwall carbon nanotubes and NiO nanostructures were fabricated through reactive inverse matrix assisted pulsed laser evaporation technique. Nitrogen doping of the carbon nano structures was carried out by introducing ammonia, urea and melamine precursors in the target. The N-doped graphene electrodes exhibited a significant capacitance enhancement as compared to non-doped ones. This fact is commonly ascribed to faradaic mechanisms. However, our structural-compositional studies point to a significant change of the structural configuration of the composites at the nanoscale upon the nitrogen functionalization as the source of the electrodes' capacitance enhancement. The composites fabricated with urea precursor exhibited the highest capacitance, and this fact was associated with the presence of pyridinic N groups that triggered the formation of a high amount of structural defects (vacancies - boundaries) and microporosity, not observed in the samples synthesized with other precursors that mainly contained pyrrolic-graphitic N.

Organic-inorganic hybrid perovskite solar cells are within the emerging photovoltaic technologies. The combination of different halogen ions, in certain fill fractions, is one of the methods to improve the perovskite film properties. Herein, fabrication and characterization of perovskite cells in standard mesoscopic architecture using one-step deposition method has been done. The role of the halogen ions (Chlorine or Bromine) on crystal structure growth and photoelectric performance has been investigated. X-ray diffraction, scanning electron microscopy, atomic force microscopy and optical microscopy analysis were performed. The microstructure, composition and morphology of CH3NH3PbI1.8Br1.2 and CH3NH3PbI1.8Cl1.2 films are dissimilar, although identical fabrication method was used. Same holds for optical properties, band gap energies of 1.84 eV and 1.63 eV, respectively, being obtained. Integrated in solar cells, the maximum power conversion efficiency of the Br based devices is beyond 10%, while for those based on Cl, the efficiency drops around 5%.

This study presents the functionalization and characterization of graphene and electromagnetic interference (EMI) attenuation capacity in epoxy-nanocomposites. The modification of graphene involved both small molecules and polymers for compatibilization with epoxy resin components to provide EMI shielding. The TGA and RAMAN analyses confirmed the synthesis of graphene with a different layer thickness of the graphene sheets. Graphene samples with different layer thicknesses (monolayer, few layers, and multilayer) were selected and further employed for epoxy coating formulation. The obtained nanocomposites were characterized in terms of EMI shielding effectiveness, SEM, micro-CT, magnetic properties, and stress-strain resistance. The EMI shielding effectiveness results indicated that the unmodified graphene and hexamethylene diamine (HMDA) modified graphene displayed the best EMI shielding properties at 11 GHz. However, the epoxy nanocomposites based on HMDA modified graphene displayed better flexibility with an identical EMI shielding effectiveness compared to the unmodified graphene despite the formation of aggregates. The improved flexibility of the epoxy nanocomposites and EMI shielding characteristics of HMDA functionalized graphene offers a practical solution for textile coatings with microwave absorbing (MA) capacity.

The aim of this experimental work was to investigate the influence of the ion beam charge state on damage production in nanomaterials. To achieve this, we employed Raman spectroscopy, atomic force microscopy, and transmission electron microscopy to investigate nanomaterials irradiated by a 23 MeV I beam. We found a significant influence of the ion charge state on damage production in monolayer graphene, but found no evidence of this effect in bilayer and trilayer graphene, nor in graphite. Furthermore, we found no evidence of this effect in CaF2 and SiO2 nanocrystals irradiated with the same ion beam.

Cu2ZnSnS4 (CZTS) is regarded as one of the emerging materials for next-generation thin film solar cells. However, its synthesis is complex, and obtaining a single-phase CZTS thin film is difficult. This work reports the elaboration of Cu2ZnSnS4 thin films by a sequential magnetron sputtering deposition of Cu2SnS3 (CTS) and ZnS as stacked films. Initially, the CTS films were prepared on a soda lime glass substrate by annealing Cu and SnS2 stacked layers. Second, ZnS was deposited by magnetron sputtering on the CTS films. The CTS\ZnS stacks were then annealed in Sn + S or S atmospheres. The tetragonal CZTS structure was obtained and confirmed by grazing incidence X-ray diffraction and Raman spectroscopy. The morphological and compositional characteristics, measured by scanning electron microscopy and energy-dispersive spectroscopy, revealed large grains and dense surfaces with the elemental composition close to the intended stoichiometry. Additional X-ray photoemission spectroscopy measurements were performed to determine the surface chemistry and particularities of the obtained films. The optical properties, determined using conventional spectroscopy, showed optimal absorber layer band gap values ranging between 1.38 and 1.50 eV. The electrical measurements showed that all the films are p-type with high carrier concentrations in the range of 10(15) to 10(20) cm(-3). This new synthesis route for CZTS opens the way to obtain high-quality films by an industry-compatible method.

The dimensional effect of electric charge storage with a density of up to 270 mu F/g by the hydrated ZrO2-nanoparticles system was determined. It was found that the place of localization of different charge carriers is the generalized heterophase boundary-nanoparticles surface. The supposed mechanism of the effect was investigated using the theory of dispersed systems, the band theory, and the theory of contact phenomena in semiconductors, which consists of the formation of localized electronic states in the nanoparticle material due to donor-acceptor interaction with the adsorption ionic atmosphere. The effect is relevant for modern nanoelectronics, microsystem technology, and printed electronics because it allows overcoming the basic physical restrictions on the size, temperature, and operation frequency of the device, caused by leakage currents.