Publications

Ferrofluids investigated along for about five decades are ultrastable colloidal suspensions of magnetic nanoparticles, which manifest simultaneously fluid and magnetic properties. Their magnetically controllable and tunable feature proved to be from the beginning an extremely fertile ground for a wide range of engineering applications. More recently, biocompatible ferrofluids attracted huge interest and produced a considerable increase of the applicative potential in nanomedicine, biotechnology and environmental protection. This paper offers a brief overview of the most relevant early results and a comprehensive description of recent achievements in ferrofluid synthesis, advanced characterization, as well as the governing equations of ferrohydrodynamics, the most important interfacial phenomena and the flow properties. Finally, it provides an overview of recent advances in tunable and adaptive multifunctional materials derived from ferrofluids and a detailed presentation of the recent progress of applications in the field of sensors and actuators, ferrofluid-driven assembly and manipulation, droplet technology, including droplet generation and control, mechanical actuation, liquid computing and robotics.

Complex ferroelectric structures with dielectric interlayers may become possible alternatives for neuromorphic computing and low-power field-effect transistors since they exhibit multiple polarization states and negative capacitance. However, the effects on the switching characteristics due to the electric properties of the nonferroelectric circuit element have not been clearly evaluated so far. A high-resistance or low-capacitance element is usually associated with an increased depolarization field and eventually with suppression of polarization but without further consideration of the electrostatic differences. Therefore, we show that switching behavior is dramatically changed if the non-FE element is a resistive component or a capacitive one. This is reflected by either an increased apparent coercive field or imprint, respectively. A negative capacitance regime was observed at different moments but strongly depends on the nature of the nonferroelectric element. The voltage on the ferroelectric component remains constant during switching, which is a fingerprint of the system passing through non-equilibrium states. Therefore, we propose an algorithm to recover the S-shape of polarization dependence on the ferroelectric internal voltage during the slowed transition between the two stable states of polarization.

Permanent localization of electrons inside a graphene quantum dot (GQD) is known to be forbidden, as a manifestation of Klein tunneling. However, an electron which scatters on a GQD may be transiently trapped inside and one known practice is the usage of magnetic field. These electronic states discussed here, called quasibound states, are scattering resonances typically characterized by a finite lifetime (trapping time). In this paper, we present a theoretical perspective concerning the opportunity to enhance the lifetime of quasibound states excited in a GQD placed in a uniform magnetic field, using circularly polarized light. Generally speaking, electron trapping inside GQDs is achievable for certain well-defined conditions, for instance, magnetic field intensity. We report here that the trapping time of an electron inside a GQD may be successfully enhanced by adjusting the light intensity while keeping the magnetic field constant.

Band bending at semiconductor surfaces and interfaces is the key to applications ranging from classical transistors to topological quantum computing. A semiconductor particularly important for optical as well as microwave devices is GaN. What makes the material useful is not only its large bandgap but also that it can be heavily doped to become metallic. Here, we apply soft-x-ray angle-resolved photoelectron spectroscopy (ARPES) to metallic Si-doped GaN to explore the electron density and momentum-resolved band dispersions of the valence and conduction electrons varying through the surface band-bending region. We find an upward band bending, where the measured band occupation reduces toward the surface, as probed with low photon energies 1.4 keV, where the photoelectron mean free path exceeds the spatial extent of the band-bending region. Our quantitative analysis of the experimental data describes the potential variation in the band-bending region via self-consistent Poisson-Schrodinger equations. We put forward an insightful model to simulate the ARPES spectra from this region through summing up the contribution from all atomic layers, weighted by the photoelectron mean free path, under in-phase conditions achieved at particular values of the photoelectron out-of-plane momentum. The model adequately describes the peculiarities of the ARPES spectra caused by the surface band bending, including the photon-energy dependence of the apparent band occupation and Fermi-surface area, and allows accurate determination of the band-bending profile and values of the photoelectron mean free path. Finally, comparison of our data with supercell density functional theory calculations reveals the preferential location of Si atoms as substitutional for Ga, with the doped electrons entering the GaN conduction bands without formation of separate impurity states as would occur for Si interstitials. Our theoretical and experimental results resolve fundamental questions underpinning device performance of the GaN-based and other semiconductor materials in general and demonstrate a general methodology for quantitative studies of electron states in the band-bending region.

Recently, a simple model was proposed for the microscopic energy associated to the ferroelectric phase, to be used in a statistical approach in order to derive the equations of state for a ferroelectric thin film [C. M. Teodorescu, Phys. Chem. Chem. Phys., 2021, 23, 4085-4093]. The stabilization energy for an elemental dipole in a polar thin film is the result of the interaction of this dipole with the field generated by charges accumulated at surfaces or interfaces of the thin film. An essential parameter of this interaction is the permittivity of the film, assumed to be a material constant, together with the maximum value of an elemental dipole and the density of the elemental dipoles. These can be connected to three experimental parameters which are the saturation polarization P-s, the coercive field at zero temperature E-c((0)) and the Curie temperature T-C. However, for a ferroelectric material both the global and the differential permittivity depend on the temperature and on the polarization. This raises the question whether such a non-constant permittivity should be used in the stabilization energy of the ferroelectric phase, and whether it can be identified self-consistently with the function resulting after applying the statistics based on the microscopic model. In such case, a mutual interdependence should exist between P-s, E-c((0)) and T-C. A model is built up, able to predict coercitivity, however E-c((0)) and T-C yield values several orders of magnitude higher than the experimental ones. Therefore, one has to introduce a background dielectric constant of several hundreds to accommodate the result of the model with the experimental data. The poling history of the film has to be taken into account, together with the presence of a small bias field. The model is able to predict self-consistently the equation of state of a ferroelectric, and in particular the linear decrease of the coercive field with temperature. The microscopic parameters, in particular the background dielectric constant and the density of elemental dipoles may be expressed directly from experimental quantities.

Palladium nanoparticles entrapped in porous aromatic frameworks (PAFs) or covalent organic frameworks may promote heterogeneous catalytic reactions. However, preparing such materials as active nanocatalysts usually requires additional steps for palladium entrapment and reduction. This paper reports as a new approach, a simple procedure leading to the self-entrapment of Pd nanoparticles within the PAF structure. Thus, the selected Sonogashira synthesis affords PAF-entrapped Pd nanoparticles that can catalyze the C-C Suzuki-Miyaura cross-coupling reactions. Following this new concept, PAFs were synthesized via Sonogashira cross-coupling of the tetraiodurated derivative of tetraphenyl aLam an tan e or spiro-9,9'-bifluorene with 1,6-diethynylpyrene, then characterized them using powder X-ray diffraction, diffuse reflectance infrared Fourier transform spectroscopy, X-ray photoelectron spectroscopy, high-resolution scanning transmission electron microscopy, and textural properties (i.e., adsorption-desorption isotherms). The PAF-entrapped Pd nanocatalysts showed high catalytic activity in Suzuki-Miyaura coupling reactions (demonstrated by preserving the turnover frequency values) and stability (demonstrated by palladium leaching and recycling experiments). This new approach presents a new class of PAFs with unique structural, topological, and compositional complexities as entrapped metal nanocatalysts or for other diverse applications.

In this work, the ferroelectric characteristics of ZrO2 thin films grown on ITO-coated glass have been investigated. The ferroelectric nature of the ZrO2 films has been studied by polarization-electric field (P-E) hysteresis loops and found to be optimum for the films processed by rapid thermal annealing at 600 degrees C. The increase in the annealing temperature improves the ferroelectric properties through the increase of the in-plane strain that causes the formation of the ferroelectric orthorhombic phase. The formation of the orthorhombic phase was confirmed through high-resolution transmission electron microscopy. The effect of the electric field on the polarization switching kinetics of ZrO2 films has been investigated revealing that the switching kinetics follows the nucleation limited switching (NLS) model. The activation fields estimated from the peak values of the polarization currents (im) and the time (tm) at which im occurs are in good agreement with the values obtained from the switching characteristic time of the NLS model. This work paves the way towards the integration of (pseudo)binary oxide thin films on cheap substrates like glass for the next-generation of non-volatile memories.

Electronic structure of LaAlO3/SrTiO3 (LAO/STO) samples, grown at low oxygen pressure and post-annealed ex situ, was investigated by soft-x-ray ARPES focussing on the Fermi momentum (k (F)) of the mobile electron system (MES). X-ray irradiation of these samples at temperatures below 100 K creates oxygen vacancies (V(O)s) injecting Ti t (2g)-electrons into the MES. At this temperature the oxygen out-diffusion is suppressed, and the V(O)s should appear mostly in the top STO layer. The x-ray generated MES demonstrates, however, a pronounced three-dimensional (3D) behavior as evidenced by variations of its experimental k (F) over different Brillouin zones. Identical to bare STO, this behavior indicates an unexpectedly large extension of the x-ray generated MES into the STO depth. The intrinsic MES in the standard LAO/STO samples annealed in situ, in contrast, demonstrates purely two-dimensional (2D) behaviour. The relevance of our ARPES data analysis is supported by model calculations to compare the intensity vs gradient methods of the k (F) determination as a function of the energy resolution ratio to the bandwidth. Based on self-interaction-corrected DFT calculations of the MES induced by V(O)s at the interface and in STO bulk, we discuss possible scenarios of the puzzling 3D-ity. It may involve either a dense ladder of quantum-well states formed in a long-range interfacial potential or, more likely, x-ray-induced bulk metallicity in STO accessed in the ARPES experiment through a short-range interfacial barrier. The mechanism of this metallicity may involve remnant V(O)s and photoconductivity-induced metallic states in the STO bulk, and even more exotic mechanisms such as x-ray induced formation of Frenkel pairs.

Group IV quantum dots (QDs) in HfO2 are attractive for non-volatile memories (NVMs) due to complementary metal-oxide semiconductor (CMOS) compatibility. Besides the role of charge storage centers, SiGeSn QDs have the advantage of a low thermal budget for formation, because Sn presence decreases crystallization temperature, while Si ensures higher thermal stability. In this paper, we prepare MOS capacitors based on 3-layer stacks of gate HfO2/floating gate of SiGeSn QDs in HfO2/tunnel HfO2/p-Si obtained by magnetron sputtering deposition followed by rapid thermal annealing (RTA) for nanocrystallization. Crystalline structure, morphology, and composition studies by cross-section transmission electron microscopy and X-ray diffraction correlated with Raman spectroscopy and C-V measurements are carried out for understanding RTA temperature effects on charge storage behavior. 3-layer morphology and Sn content trends with RTA temperature are explained by the strongly temperature-dependent Sn segregation and diffusion processes. We show that the memory properties measured on Al/3-layer stack/p-Si/Al capacitors are controlled by SiGeSn-related trapping states (deep electronic levels) and low-ordering clusters for RTA at 325-450 degrees C, and by crystalline SiGeSn QDs for 520 and 530 degrees C RTA. Specific to the structures annealed at 520 and 530 degrees C is the formation of two kinds of crystalline SiGeSn QDs, i.e., QDs with low Sn content (2 at.%) that are positioned inside the floating gate, and QDs with high Sn content (up to 12.5 at.%) located at the interface of floating gate with adjacent HfO2 layers. The presence of Sn in the SiGe intermediate layer decreases the SiGe crystallization temperature and induces the easier crystallization of the diamond structure in comparison with 3-layer stacks with Ge-HfO2 intermediate layer. High frequency-independent memory windows of 3-4 V and stored electron densities of 1-2 x 10(13) electrons/cm(2) are achieved.

To enhance the spectral response of solar cells, an experimental study on LaPO4:0.01Ce(3+)/xNd(3+) (x = 0, 2, 4 mol%) was carried out, where structural and morphological properties of the prepared samples were well characterized by the means of X-ray diffraction, Fourier transform infrared spectroscopy, and scanning electronic microscope. Additionally, the photoluminescence behavior of phosphors in ultraviolet-visible (UV-VIS) and Near-infrared (NIR) regions were investigated to confirm the energy transfer (ET) from Ce3+ to Nd3+. Moreover, the quantum efficiency of Ce3+/Nd3+-co-doped samples was estimated as high as similar to 172% and the possible ET process was described. Accordingly, the LaPO4:Ce3+/Nd3+ phosphors can convert the UV light (275 nm) into NIR photons (approx. 1059 nm) through the possible two-pathway energy transfer processes from Ce3+ sensitizer ions to Nd3+ activators. Obtained NIR down-conversion emissions are suitable for improving the conversion efficiency of c-Si solar cells.