Deposition of semiconductor thin films and multilayer structures by magnetron sputtering: dielectrics (SiO2, TiO2, ZrO2, HfO2, Al2O3, Si3N4) and semiconductors (Si, Ge, SiGe, SiGeSn) on heated substrates or on substrates mantained at room temperature
Configuration
- in situanalysis techniques:
- Auger electron surface spectroscopy – AES
- low-energy electron diffraction – LEED
- real time in situellipsometric monitoring and profilometer for measuring thicknesses
Technical specifications
- 10-8Torr high vacuum
- 4 magnetrons in confocal configuration with DC and RF deposition regimes
- fully-automated sample manipulator
- substrate heating, degassing
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