
Magnetron sputtering is deposition technology used to deposit thin layers of a target material (cathode) on the surface of a substrate (anode). The method allows to obtain single- and multi-layer structures and offers the possibility to clean the substrate with the ion beam.
No of magnetrons: 6
Working pressure: 2* 10-6 ~ 2* 10-2 Torr
No. of DC sources: 2
No. of RF sources: 2
Max. substrate size: 5 x 5 cm
Rotated substrate: Yes
Substrate temperature: < 600 ℃
Temperature accuracy: +/- 1 ℃
Type of depositions: Combinatorial up to 4
Alternate up to 6
Gas flow: 1- 50 sccm Argon, Helium, Nitrogen, and/or Oxigen

Copyright © 2025 National Institute of Materials Physics. All Rights Reserved