Rapid thermal annealing

Rapid thermal annealing (RTA) and controlled oxidations (RTO) in the rapid thermal processing – RTP system (up to 3-inch silicon wafer) at 200 – 1250 °C with ramp rates up to 200 °C/s, in gas flow (N₂, O₂, Ar si H₂) and thermal annealing in the three independent temperature zone horizontal split tube furnace at temperatures up to 1200 °C in vacuum or Ar, N₂ flow

Rapid thermal processing – RTP system (left) for thermal annealing (RTA), oxidation (RTO) and nitration (RTN). Three independent temperature zone horizontal split tube furnace (right) for thermal annealing and physical vapor deposition (PVD).