Funcționalitate de spin confinata la suprafața si interfața oxizilor conductori cu electroni corelați
Project Director: Dr. Marius HUSANU
Abstract
Within this project, we focus on the field of correlated transparent oxides, aiming to enhance their functionality through doping with magnetic impurities. Our goal is to develop innovative concepts related to transparent conductors by exploiting electronic interactions in order to increase optical transparency while maintaining high electrical conductivity, achieved through the large electron density and the screening of the electron–phonon interaction. This concept of transparent conductors with spin functionality takes the form of a V-based oxide membrane transferred onto Si. By manipulating epitaxial strain, crystalline orientation, reduced dimensionality, surface confinement, and defect engineering, we aim to tune the orbital energy levels, thereby controlling their occupation and functionality. Through this research, we anticipate significant progress in the development of transparent conductors with enhanced functionalities, contributing to advancements in various applications such as displays, lighting, energy generation and storage, with the potential to extend toward portable devices by 2030.
New knowledge, economic and societal impact
In terms of knowledge and new understanding of fundamental concepts, the project aims to integrate the spin functionality in the correlated, transparent oxides, answering whether magnetism can survive in the presence of electronic correlations
Secondly, going towards the two dimensional limit, inspired by grapehene and van der Waals materials, we will enforce electronic correlations by geometric design in correlated oxides.
From an economic perspective, the systems developed within the project will be integrated in devices with multiple functionality – which represent our commitment to a cleaner environment and sustainable resource use.
Figure 1. Fundamental concepts guiding the design of spin functionality at the interface of correlated oxides
The project is based on the epitaxial deposition of doped conductive and transparent oxides (Fig. 1a), in which the transparency window is modified through electronic correlations.
The approach aims to implement frontier concepts such as Moiré states obtained by stacking thin layers at angles close to the ‘magic’ angle (Fig. 1b), as well as doping with transition-metal impurities in increasing order of electronic correlations (Fig. 1d).
Figure 2. Activities organized in working packages
More specifically, the activities, divided as shown in Fig. 2, comprise three stages:
Stage 1: Epitaxial LSVO(111) layers with spin functionality achieved through engineering the coexistence of dopant phases of SrVO₃ – SVO with LaFeO₃ – LFO and LaNiO₃ – LNO
Deadline: December 2025
Stage 2: Transparent and conductive oxide membranes enriched with spin functionality of the type LaSrVFeNiO₃ – LSVFN, detached from the substrate
Deadline: December 2026
Stage 3: Demonstration of the combined spin/conductivity/transparency functionality after transfer onto a Si substrate for on-chip applications.
Deadline: December 2027
- Dr. Marius-Adrian Husanu, CS1 BainmapID: U-1700-038V-4318
- Dr. Dana Georgeta Popescu, CS2 BrainmapID: U-1700-039K-3480
- Dr. Cristina Florentina Chirila, CS1 BrainmapID: U-1700-039A-2868
- Dr. Marian Cosmin Istrate, CS3, BrainmapID: U-1900-061U-8873
- Dr. Simona Gabriela Greculeasa, CS3, BrainmapID: U-1700-039S-4308
- Dr. Adrian Constantin Pena, CS3, BrainmapID: U-1900-061J-9902
- Alexandru Cristi Iancu, PhD student BrainmapID: U-1900-063R-6340
- Alexandru Cristi Iancu, PhD student BrainmapID: U-1900-063R-6340
- Adina Diana Dobrin PhD student, ORCID: 0009-0005-0843-9290
Results obtained so far during Stage1
Activity 1.1: We prepared epitaxial SrVO₃ – SVO layers on SrTiO₃(111) substrates
Activity 1.2: We performed structural characterization of the SVO surfaces and their interfaces
Activity 1.3: We prepared epitaxial SrVO₃ layers on SrTiO₃(111) substrates with a Sr₂Al₃O₆ – SAO buffer layer
Activity 1.4: We derived the theoretical electronic structure of the interfaces with SrVO₃
Activity 1.5: We established the experimental electronic structure of the interfaces with SrVO₃
Experimental protocol
We ellaborated the method for stabilizing SrVO₃ in the perovskite state by hydrogen reduction and vacuum annealing
From Classical Ferroelectricity to Emerging Low‐Dimensional Phases, Advanced Physics Research (2025), Marius Adrian Husanu; Dana G. Popescu, DOI: 10.1002/apxr.202500107
Monophasic Titanate-Based Photocatalyst with Heteroatom Mixed Iso-Aliovalency Enabling Water Oxidation, Daniel Ghercă; Adrian-Iulian Borhan; Dana-Georgeta Popescu; Marius-Adrian Husanu; Camelia Nicoleta Borca; George Stoian; Horia Chiriac; Gabriel Ababei; Nicoleta Lupu, ACS Applied Materials and Interfaces (2025), DOI: 10.1021/acsami.5c03417
The impact of organic alkalis in the tailoring of MgCuAl-LDH-based composites as a catalyst for Claisen-Schmidt condensation, Rodica Zăvoianu, Salman Eman Taha, Daniela Cristina Culiţă, Monica Răciulete, Dana Georgeta Popescu , Vasile I. Parvulescu, Bogdan Cojocaru, Octavian D. Pavel, Molecular Catalysis (2025), DOI: 10.1016/j.mcat.2025.115592
Optical Properties of Silicon and Fundamentals of Waveguide Theory in Silicon Photonics, Dana G. Popescu. Book chapter in Mastering Optoelectronics - Fundamentals, Applications, and Innovations, DOI: 10.5772/intechopen.1010928
- Optical Properties of Silicon and Fundamentals of Waveguide Theory in Silicon Photonics, Dana G. Popescu in Mastering Optoelectronics - Fundamentals, Applications, and Innovations (2025), DOI: 10.5772/intechopen.1010928
“Epitaxial Growth of Iron and Cobalt on Oxide Substrates” la OPERA European Conference on Innovative and Advanced Epitaxy, Pisa - Italia, 19-23 May 2025. Prezentare orala
”Electronic Structure of Reduced FeOOH Deposited on SrTiO3 Substrates”, International Semiconductor Conference CAS 2025, organizată de IEEE Electron Devices Society și a Institutului Național de Cercetare-Dezvoltare pentru Microtehnologie (IMT București), 7-12 octombrie 2025, Sinaia, România.
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