Publications

6.078 articles found

1671

ANALYSIS of Pdge-BASED CONTACT on N-Gasb

Ghita, RV; Negrila, CC; Predoi, D; Trusca, R

2018, 7TH INTERNATIONAL CONFERENCE ON STRUCTURAL ANALYSIS OF ADVANCED MATERIALS (ICSAAM 2017), 1932

DOI: 10.1063/1.5024167

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Pd-Ge based ohmic contacts on III-V semiconductor e.g.Pd-Ge on n-GaAs are viewed as a viable alternative to low contact resistance metallization. As it was remarked [11, together with the device dimensions decrease, the AuGeNi metallization system becomes inadequate for shallow-junction devices. This characteristic is related to the formation of a low melting point beta- AuGa phase that leads to a poor contact thermal stability. Gallium Antimonide is anIII-V semiconductor compound that can be used in a photovoltaic convertor of GaAs/GaSb tandem stack With a predicted efficiency of 30%. Reduced series resistance on GaSb cells can be achieved by the improving of contact metallization properties. The present study is dedicated to the preparation conditions and structural analyzing of PdGe based contacts on n-GaSb, namely: Pd/Au/Ge. There are presented the depth profiling for PdGe metallization obtained from XPS measurements, and morphologic studies arisen from SEM technique and AFM technique.

1672

AlN/Si based SAW resonators for very high sensitivity temperature sensors

Nicoloiu, A; Muller, A; Zdru, I; Vasilache, D; Stan, GE; Nastase, C; Dumitru, V; Dinescu, A

2018, 2018 IEEE INTERNATIONAL ULTRASONICS SYMPOSIUM (IUS)

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In the current work we present AlN/Si based Surface Acoustic Wave (SAW) devices exploited as high sensitivity temperature sensors. The experimental results show that the resonance frequency varies between 3.2 and 5.5 GHz, depending on the finger/Interdigit spacing width and metal thickness. The temperature measurements were performed between -250 degrees C and +150 degrees C in a cryostat. The sensitivities were investigated between 24-150 degrees C and the values were compared to the results obtained for similar GaN/Si based SAW structures.

1673

GeSi nanocrystals in SiO2 matrix with extended photoresponse in near infrared

Stavarache, I; Nedelcu, L; Teodorescu, VS; Maraloiu, VA; Dascalescu, I; Ciurea, ML

2018, CAS 2018 PROCEEDINGS: 2018 INTERNATIONAL SEMICONDUCTOR CONFERENCE, 256

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The films of SiGe nanocrystals in SiO2 on Si substrate were obtained by co-sputtering Si, Ge, and SiO2 followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.

1674

The Cu- and Zn-complex-catalyzed methanolysis of the chemical warfare nerve agents soman, sarin, and VX

Petrea, N; Petre, R; Pretorian, A; Toader, C; Somoghi, V; Neatu, F; Florea, M; Neatu, S

MAR-APR 2018, COMPTES RENDUS CHIMIE, 21, 345

DOI: 10.1016/j.crci.2017.08.006

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The catalytic methanolysis of the chemical warfare nerve agents soman, sarin, and VX was investigated by using Cu or Zn complexes. Although VX withstood decontamination, the decomposition yield being around 96%, the soman and sarin deposited on different surfaces were almost fully destroyed under ambient conditions. The catalytic tests performed on a wide range of contaminated surfaces confirm the activity of the investigated catalytic systems, these complexes being suitable, from an economical point of view, for use in the formulation of a possible decomposition kit with military or civilian applicability. (C) 2017 Academie des sciences. Published by Elsevier Masson SAS. All rights reserved.

1675

OPTICAL COATINGS FOR ELI EXPERIMENTS PREPARED BY LASER ABLATION

Bercea, A; Filipescu, M; Moldovan, A; Brajnicov, S; Colceag, D; Ion, V; Nistor, LC; Zorila, A; Dinescu, M

2018, ROMANIAN JOURNAL OF PHYSICS, 63

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Dielectric materials (HfO2, A1(2)O(3), SiO2 and Ta2O5) processed as thin films have been studied extensively for applications in microelectronics, biology, medicine, etc. In the last decade, antireflection coatings based on these types of materials have received considerable attention for applications in the field of high power laser optics. In this paper we report on multi-layers from materials with low and high refractive indices deposited on quartz substrates by laser ablation. Damage tests performed with a Ti-Sapphire laser (775 nm wavelength, 220 fs pulse duration) evidenced higher threshold values for hafnia based heterostructures than for the others heterostructures.

1676

Spectroscopic Characterisation of Multiferroic Interfaces

Husanu, MA; Vaz, CAF

2018, SPECTROSCOPY OF COMPLEX OXIDE INTERFACES: PHOTOEMISSION AND RELATED SPECTROSCOPIES, 266, 281

DOI: 10.1007/978-3-319-74989-1_10

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In this chapter we discuss the capabilities of X-ray photoemission and absorption spectroscopies for the investigation of the electronic, magnetic and electric properties of multiferroic materials and heterostructures. As complementary techniques providing element selective information on both occupied and empty states, their combination delivers a comprehensive picture of the chemical state of individual species, magnetic moments, bulk and surface band structure, and local atomic environment at the interface between dissimilar materials. By directly probing the electronic structure at the atomic level, unique insights can be learned about the mechanisms responsible for the magnetoelectric couplings in this fascinating class of materials.

1677

Local configurations and atomic intermixing in as-quenched and annealed Fe1-xCrx and Fe1-xMox ribbons

Stanciu, AE; Greculeasa, SG; Bartha, C; Schinteie, G; Palade, P; Kuncser, A; Leca, A; Filoti, G; Birsan, A; Crisan, O; Kuncser, V

2018, PHILOSOPHICAL MAGAZINE, 98, 1067

DOI: 10.1080/14786435.2018.1425556

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Local atomic configuration, phase composition and atomic intermixing in Fe-rich Fe1-xCrx and Fe1-xMox ribbons (x = 0.05, 0.10, 0.15), of potential interest for high-temperature applications and nuclear devices, are investigated in this study in relation to specific processing and annealing routes. The Fe-based thin ribbons have been prepared by induction melting, followed by melt spinning and further annealed in He at temperatures up to 1250 degrees C. The complex structural, compositional and atomic configuration characterisation has been performed by means of X-ray diffraction (XRD), transmission Mossbauer spectroscopy and differential scanning calorimetry (TG-DSC). The XRD analysis indicates the formation of the desired solid solutions with body-centred cubic (bcc) structure in the as-quenched state. The Mossbauer spectroscopy results have been analysed in terms of the two-shell model. The distribution of Cr/Mo atoms in the first two coordination spheres is not homogeneous, especially after annealing, as supported by the short-range order parameters. In addition, high-temperature annealing treatments give rise to oxidation of Fe (to haematite, maghemite and magnetite) at the surface of the ribbons. Fe1-xCrx alloys are structurally more stable than the Mo counterpart under annealing at 700 degrees C. Annealing at 1250 degrees C in He enhances drastically the Cr clustering around Fe nuclei.

1678

ZnHAp Thin Films for Medical Applications

Iconaru, SL; Groza, A; Chapon, P; Gaianschi, S; Petre, CC; Jiga, G; Beuran, M; Prodan, AM; Lupescu, O; Trusca, R; Predoi, D

2018, 9TH INTERNATIONAL CONFERENCE ON TIMES OF POLYMERS AND COMPOSITES: FROM AEROSPACE TO NANOTECHNOLOGY, 1981

DOI: 10.1063/1.5045984

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The research regarding the properties of thin films of hydroxyapatite doped with various ions such as zinc elaborated by spin-coating technique have rarely been fabricated and studies in recent years. In the present study Zn doped hydroxyapatite (ZrHAp) synthesized by a sol-gel method were coated on Ti substrates using a spin-coating technique. The thin films was characterized by Scanning Electron Microscopy (SEM) and Glow Discharge Optical Emission Spectroscopy (GDOES). The structural characterizations of ZnHAp thin films showed the presence of Zn and apatitic structure. The GD depth profiles revealed the successful embedding of the Zn ions in HAp structure. In addition, in vitro evaluation of the antifungal properties of ZnHAp demonstrated the potential antifungal effect of ZnHAp thin films against Staphylococcus aureus 0364 biofilm.

1679

Polymer Dispersed Liquid Crystals films doped with carbon nanotubes - preparation methods

Manaila-Maximean, D; Circu, V; Ganea, P; Barar, A; Danila, O; Staicu, T; Loiko, VA; Konkolovich, AV; Miskevich, AA

2018, ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES IX, 10977

DOI: 10.1117/12.2326186

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Polymer Dispersed Liquid Crystals (PDLC) are composite materials consisting of small liquid crystal (LC) droplets surrounded by a polymer matrix. Due to their relatively easy preparation and processing, the PDLC devices found many applications such as displays, architectural windows, energy control devices, projection displays, spatial light modulators, polarizers. Carbon nanotubes (CNT) have excellent mobility and are suitable as doping nanoparticles in order to improve the electrically-controlled orientation of LC. This paper presents the methods of preparation of PDLC doped with CNT. Experimental results are presented for the films obtained by solvent induced polymerization method, using polymethyl methacrylate and a nematic LC, E7. The obtained films are characterized by polarized optical microscopy, differential scanning calorimetry and electro-optical transmission.

1680

Limits and Particularities of the Synthesis of Ba1-xCaxTiO3 for Piezoelectric Applications, by Topochemical Conversion from Molten Salt Solutions

Vlaicu, ID; Maraloiu, AV; Ghica, D; Mercioniu, IF; Stefan, M; Vlaicu, AM; Negrea, RF; Kuncser, AC; Bulat, S; Krzmanc, MM; Ciobanu, R; Plopa, O

2018, 2018 INTERNATIONAL CONFERENCE AND EXPOSITION ON ELECTRICAL AND POWER ENGINEERING (EPE), 1050

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Because of the unique properties of the ferroelectric perovskite particles with a well-defined anisotropic form like shape-and size dependent at low dimensions they have all the attention of the scientific world. Extensive morphostructural techniques will be used to characterize the piezoelectric material.