Publications

This work is focusing on generation, time evolution, and impact on the electrical performance of silicon diodes impaired by radiation induced active defects. n-type silicon diodes had been irradiated with electrons ranging from 1.5 MeV to 27 MeV. It is shown that the formation of small clusters starts already after irradiation with high fluence of 1.5 MeV electrons. An increase of the introduction rates of both point defects and small clusters with increasing energy is seen, showing saturation for electron energies above similar to 15 MeV. The changes in the leakage current at low irradiation fluence-values proved to be determined by the change in the configuration of the tri-vacancy (V-3). Similar to V-3, other cluster related defects are showing bistability indicating that they might be associated with larger vacancy clusters. The change of the space charge density with irradiation and with annealing time after irradiation is fully described by accounting for the radiation induced trapping centers. High resolution electron microscopy investigations correlated with the annealing experiments revealed changes in the spatial structure of the defects. Furthermore, it is shown that while the generation of point defects is well described by the classical Non Ionizing Energy Loss (NIEL), the formation of small defect clusters is better described by the "effective NIEL" using results from molecular dynamics simulations. (C) 2015 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.

A new methodology for the accurate determination of the specific absorption rate of ferrofluids with magnetite nanoparticles of average size of about 10 nm subjected to alternative current magnetic fields is proposed. A simple numerical compensation of the heating rates by the cooling rates obtained at similar temperatures is employed. Comparisons of the as-obtained adiabatic heating curves with theoretical evaluations are discussed.

We investigate the properties of Dirac electrons in a finite graphene sample under a perpendicular magnetic field that emerge when an in-plane electric bias is also applied. The numerical analysis of the Hofstadter spectrum and of the edge-type wave functions evidence the presence of shortcut edge states that appear under the influence of the electric field. The states are characterized by a specific spatial distribution, which follows only partially the perimeter, and exhibit ridges that connect opposite sides of the graphene plaquette. Two kinds of such states have been found in different regions of the spectrum, and their particular spatial localization is shown along with the diamagnetic moments that reveal their chirality. By simulating a four-lead Hall device, we investigate the transport properties and observe unconventional plateaus of the integer quantum Hall effect that are associated with the presence of the shortcut edge states. We show the contributions of the novel states to the conductance matrix that determine the new transport properties. The shortcut edge states resulting from the splitting of the n = 0 Landau level represent a special case, giving rise to nontrivial transverse and longitudinal resistance.

Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10-30 mJ/cm(2). The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 degrees C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm(2) and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.

The role of iron doping on magnetic properties of hydrothermal anatase TiO2:Fe-57 (0-1 at. %) nanoparticles is investigated by combining superconducting quantum interference device magnetometry with Mossbauer and electron paramagnetic resonance techniques. The results on both as-prepared and thermally treated samples in reduced air atmosphere reveal complexity of magnetic interactions, in connection to certain iron ion electron configurations and defects (oxygen vacancies, F-center, and Ti3+ ions). The distribution of iron ions is predominantly at nanoparticle surface layers. Formation of weak ferromagnetic domains up to 380 K is mainly related to defects, supporting the bound magnetic polaron model. (C) 2015 AIP Publishing LLC.

Efficient laser emission at 1.06 mu m was obtained from a diode-laser quasi-continuous wave pumped Nd0.04Gd0.86Lu0.10Ca4O(BO3)(3) (Nd:GdLuCOB) single crystal. An uncoated, 6.0-mm long, ZX-cut Nd:GdLuCOB medium yielded laser pulses with 1.76 W peak power for absorbed pump pulses of 5.49 W peak power, corresponding to an overall optical-to-optical efficiency eta(oa) = 0.32; the slope efficiency was eta(sa) = 0.44. Comparison is made with an uncoated XY-cut Nd:GdCOB medium (4.0-at.% Nd doping and 6.8-mm length) from which laser pulses with 1.74W peak power (at optical efficiency eta(oa) = 0.25) and 0.31 slope efficiency were obtained. The improvements in laser emission of Nd:GdLuCOB at the fundamental wavelength are important for future self-frequency doubling in ZX principal plane of this crystal. (C) 2015 Elsevier B.V. All rights reserved.

We report on scaling of a laser configuration in which a YAG prism is used to couple the pump beam from a fiber-coupled diode laser directly into a Nd:YAG medium. Several resonator geometries have been investigated. In free generation regime laser pulses at 1.06 mu m with energy of 22.1 mJ for the pump energy of 44.6 mJ were obtained from a 10.0 mm long, 1.0-at% Nd:YAG single crystal that had the high-reflectivity mirror coated directly on one of the laser crystal surface. The slope efficiency was 0.51. A similar uncoated Nd:YAG crystal placed in a plane-plane resonator delivered laser pulses with 17.8 mJ energy under the pump with 45.4 mJ energy, at 0.40 slope efficiency. Further, a passively Q-switched Nd:YAG/Cr4+:YAG composite ceramic laser pumped through a YAG prism has been built. Using a Cr4+:YAG saturable absorber of 0.85 initial transmission the device delivered laser pulses with 0.29 mJ energy and 11 ns duration. The output performances are compared to those obtained in a classical end-pumping scheme. (C) 2014 Elsevier Ltd. All rights reserved.

In the present work, we report a systematic study of the phase formation and sintering ability of different oxide compositions in the SnO2-ZnO binary system using solid state reactions. For some selected compositions mechanically activated powders were also investigated. Structural and morphological characterizations of the samples were performed by X-ray diffraction (XRD), FT-IR Spectroscopy, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). Only the formation of Zn2SnO4 binary compound was revealed in the experimental conditions. Based on the structural results the subsolidus equilibrium phase diagram was established. The sintering ability of the studied samples was also determined, establishing the compositions domains of obtaining dense or porous ceramics. The investigation by impedance spectroscopy in the 300-600 K temperature range shows that all studied samples exhibit n-type semiconductor behavior with low values of the activation energy (0.18-0.34 eV). (C) 2014 Elsevier Ltd and Teclma Group S.r.l. All rights reserved.

Bulk ceramics of Ga2S3 and rare-earth sulfides (EuS, Gd2S3, Er2S3) as well as combinations thereof have been prepared by spark plasma sintering (SPS). The disk-shaped ceramics were used as targets for pulsed laser deposition (PLD) experiments to obtain amorphous thin films. The properties of these new bulks and amorphous thin films have been investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), optical transmission spectroscopy, and atomic force microscopy (AFM). In order to test the photoexpansion effect in Gd2S3 and the possibility to create planar arrays of microlenses, the film was irradiated with femtosecond laser pulses at different powers. For low laser power pulses (up to 100mW power per pulse) a photoexpansion effect was observed, which leads to formation of hillocks with a height of 40-50 nm. EuS doped Gd2S3 thin film shows luminescence properties, which recommend them for optoelectronic applications.

Thin films of Sr2FeMoO6 (SFMO) were grown by pulsed laser deposition in non-optimized argon ambient pressures. The films were found to contain a high number of precipitates of foreign phases. The nature and microstructure of these phases were investigated in detail by high-resolution scanning transmission electron microscopy (STEM) and X-ray diffractometry (XRD). We found out that the dominant foreign phase embedded in the SFMO film matrix was SrMoO4 (SMO). Through STEM and XRD analysis, we determined that the SMO phase grows epitaxially with respect to the surrounding SFMO matrix and has a fairly good crystallinity. Although the SFMO films include many foreign precipitates, they still exhibit good conducting properties and moderate magnetization values. Tuning the growth of the SMO phase on top of SFMO films to obtain a natural tunnel barrier might pave the way for future applications of SFMO in spintronic devices.