National Institute Of Materials Physics - Romania

The precursor method was employed to prepare ZnAl2_xCrxO4 (x = 0, 0.25, 0.5, 0.75, 1) using tartaric acid as a ligand. Five tartarate compounds were isolated as precursors for the obtaining of zinc aluminate and chromium -substituted zinc aluminate. These coordination compounds were characterized by elemental chemical analysis, infrared (IR) and ultraviolet visible (UV-Vis) spectroscopy, and thermal analysis. The influence of Cr3+ substi-tution on the structure, morphology and optical properties of the synthesized mixed oxides was investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy dispersive X-ray spectroscopy (EDS), infrared, Raman and UV-Vis spectroscopy, and nitrogen adsorption - desorption analysis. The XRD patterns and Raman spectra confirmed the formation of spinel structure. The mean crystallite size varied from 18 to 22 nm SEM and EDS showed uniform composition and microstructure of the ZnAl2_xCrxO4 nanocrystalline powders. The values of the optical energy bandgap for the samples were found to be in the 3.92 - 2.85 eV range. The photocatalytic performance in the degradation reaction of Eosin Y (EY) under visible light irradiation was evaluated. The Eosin Y degradation efficiency values were obtained between 48% and 80% after 75 min. The best photocatalytic result was obtained for the sample with the highest amount of chromium.

The paper considers the new effects of the nanoscale state of matter, which open up prospects for the development of electronic devices using new physical principles. The contacts of chemically homogeneous nanoparticles of yttrium-stabilized zirconium oxide (ZrO2-x mol% Y2O3, x = 0, 3, 4, 8; YSZ) with different sizes of 7.5 nm and 9 nm; 7.5 nm and 11 nm; and 7.5 nm and 14 nm, respectively, was studied on direct current using nanostructured objects in the form of compacts obtained by high-hydrostatic pressure (HP-compacts of 300MPa). A unique size effect of the nonlinear (rectifying-type contact) dependence of the electrical properties (in the region U < 2.5 V, I <= 2.7 mA) of the contact of different-sized YSZ nanoparticles of the same chemical composition is revealed, which indicates the possibility of creating semiconductor structures of a new type (homogeneous electronics). The electronic structure of the near-surface regions of nanoparticles of studied oxide materials and the possibility of obtaining specifically rectifying properties of the contacts were studied theoretically. Models of surface states of the Tamm-type are constructed considering the Coulomb long-range action. The discovered energy variance and its dependence on the curvature of the surface of nanoparticles made it possible to study the conditions for the formation of a contact potential difference in cases of nanoparticles of the same radius (synergistic effect), different radii (doped and undoped variants), as well as to discover the possibility of describing a group of powder particles within the Anderson model. The determined effect makes it possible to solve the problem of diffusion instability of semiconductor heterojunctions and opens up prospects for creating electronic devices with a fundamentally new level of properties for use in various fields of the economy and breakthrough critical technologies.

The microcrystallization effects induced by the real-time laser annealing in Cr-Al-C ion-sputtered films with an off-stoichiometric composition are studied. The laser annealing has been performed during Raman experiments with tunable laser power densities. Morphostructural changes induced during laser annealing were investigated by scanning electron microscopy. It has been proven that real-time laser annealing in the high-laser-power-density mode promotes quite clearly the formation of nanograins through surface microcrystallization. Detailed Raman analysis allowed for the observation of the optical modes that unequivocally identifies the low-symmetry 211 MAX phase in both low- and high-power-density modes. Such findings confirming the microcrystallization as well as the stabilization of the grain boundaries by carbon nanoclustering are confirmed by X-ray diffraction results, where the single-phase hexagonal 211 was unequivocally proven to form in the high-laser-power-density mode. The microcrystallization via laser annealing was also found to be beneficial for the elastic behavior, as the hardness values between 16 and 26 GPa were found after laser annealing, accompanied by a significantly high Young's bulk modulus. Such large values, larger than those in bulk compounds, are explicable by the nanometric grain sizes accompanied by the increase of the grain boundary regions.

The properties of organic heterostructures with mixed layers made of arylenevinylene-based polymer donor and non-fullerene perylene diimide acceptor, deposited using Matrix Assisted Pulsed Laser Evaporation on flat Al and nano-patterned Al electrodes, were investigated. The Al layer electrode deposited on the 2D array of cylindrical nanostructures with a periodicity of 1.1 mu m, developed in a polymeric layer using UV-Nanoimprint Lithography, is characterized by an inflorescence-like morphology. The effect of the nanostructuring on the optical and electrical properties was studied by comparison with those of the heterostructures based on a mixed layer with fullerene derivative acceptor. The low roughness of the mixed layer deposited on flat Al was associated with high reflectance. The nano-patterning, which was preserved in the mixed layer, determining the light trapping by multiple scattering, correlated with the high roughness and led to lower reflectance. A decrease was also revealed in photoluminescence emission both at UV and Vis excitation of the mixed layer, with the non-fullerene acceptor deposited on nano-patterned Al. An injector contact behavior was highlighted for all Al/mixed layer/ITO heterostructures by I-V characteristics in dark. The current increased, independently of acceptor (fullerene or non-fullerene), in the heterostructures with nano-patterned Al electrodes for shorter conjugation length polymer donors.

The structural properties of VO2 thin films, grown on either LSAT or Si substrates by pulsed laser deposition (PLD), are elucidated by means of transmission electron microscopy (TEM) methods. The TEM observations confirmed the successful growth of VO2 by PLD in variable thicknesses, by optimizing the O-2 partial pressure and growth temperature. The films adopt a columnar polycrystalline morphology with narrow columns, up to the film thickness height. Four VO2 polymorphs have been detected by electron diffraction and high-resolution TEM (HRTEM) analysis, with M1 being by far the most abundant phase. Post-experimental strain measurements in HRTEM images have revealed that the actual residual strain is minimized due to the columnar morphology of the VO2 grains, as well as intrinsic oxide layers in the VO2/Si epitaxy. The TEM outcomes confirmed the complementary electrical and magnetic measurements in the films, where a transition from a monoclinic M1 to a rutile VO2 R phase has been identified, influenced by the initial percentage of phases in thick VO2 films.

We have investigated the pinning potential of high-quality single crystals of superconducting material CaKFe4As4 having high critical current density and very high upper critical field using both magnetization relaxation measurements and frequency-dependent AC susceptibility. Preliminary studies of the superconducting transition and of the isothermal magnetization loops confirmed the high quality of the samples, while temperature dependence of the AC susceptibility in high magnetic fields show absolutely no dependence on the cooling conditions, hence, no magnetic history. From magnetization relaxation measurements were extracted the values of the normalized pinning potential U*, which reveals a clear crossover between elastic creep and plastic creep. The extremely high values of U*, up to 1200 K around the temperature of 20 K lead to a nearly zero value of the probability of thermally-activated flux jumps at temperatures of interest for high-field applications. The values of the creep exponents in the two creep regimes resulted from the analysis of the magnetization relaxation data are in complete agreement with theoretical models. Pinning potentials were also estimated, near the critical temperature, from AC susceptibility measurements, their values being close to those resulted (at the same temperature and DC field) from the magnetization relaxation data.

The chemical precipitation was used to obtain carbon fibers (CF) with surface modified by magnetite particles (Fe3O4). Processing was carried out by employing up to three subsequent coating stages of ultrasonic treatments. After each sonication stage, the coating was 17, 33, and 47 wt. % of the total weight of the modified fibers. Raman spectroscopy indicates the presence in the coating of a mixture of iron II and III states. As-decorated fibers were used to fabricate composites with an epoxy resin (ED-20) matrix cured with PEPA. The quantity of the carbon fiber filler was of 1, 3, and 6 wt %. At room temperature, the saturation magnetization of the soft magnetic samples was 0.37, 0.83, and 1.72 emu/g for the indicated compositions. Carbon fiber reinforced polymer materials with extra functions such as magnetic in this case, are expected to be useful in applications from the power and energy industries.

Polycrystalline MgB2 bulk samples were produced by ex-situ spark plasma sintering (SPS) using the oxygen-free preceramic polymer additive poly(dimethylsilane) as a source for carbon doping and as a sintering aid. Two major effects were identified. One is the significant enhancement of the densification kinetics during sintering for all tested compositions. The second one is the improvement of the high field critical current density for a certain level of the poly(dimethylsilane) addition.

In the present work, stannite Cu2CoSnS4 (CCTS) films were elaborated using spray pyrolysis method on soda-lime glass, at different deposition temperatures (T-d = 250, 300, and 350 degrees C), followed by different chosen sulfurization temperatures (T-s = 450, 500, and 550 degrees C). X-ray diffraction (XRD) revealed the nearly single-phase formation of CCTS films at 300 degrees C deposition temperature. After sulfurization in argon flow, the XRD lines become narrower, the average crystallite size expanding above 70 nm. The Raman spectroscopy analysis confirmed the stannite structure formation, as well as the presence CoS2 secondary phases, which reduces at higher sulfurization temperature (550 degrees C). The energy dispersive spectroscopy results indicated atomic ratios of Cu/Co/Sn/S close to the ideal stoichiometric ratio 2:1:1:4. The room temperature photoluminescence emission is recorded with maximum in the 1.35-1.40 eV range. Thermoelectric properties are measured up to 130 degrees C, the films show poor power factor as a result of small positive Seebeck coefficients 10-45 Of K -1 and low electrical conductivity despite of having relatively high carrier concentration (similar to 10(20) cm(-3)).

In this study, two alternative synthesis routes have been used in obtaining gas-sensitive NiO materials. The structural and morphological aspects were systematically investigated by X-ray diffraction (XRD) and transmission electron microscopy (TEM), revealing significant differences further mirrored in their sensing performances. Simultaneous electrical resistance and contact potential differences have been involved aiming to decouple the energetic contributions: work function (Delta phi), surface band bending (q Delta Vs) and electron affinity (Delta chi). Two sensing mechanism scenarios explained the enhancement and downgrading in the sensor response to carbon monoxide (CO) concerning the synthesis strategies. The role of relative humidity (RH) was considered throughout the electrical operando (in-field) investigations.