National Institute Of Materials Physics - Romania

This study aims to obtain uniform and homogeneous bismuth germanate oxides thin films by spin coating and using the sol-gel technique with different precursors, followed by low-temperature annealing at 560 degrees C. By using Bi(NO3)(3) precursors, we have obtained transparent, yellowish thin films with a 200 nm thickness. The structural analysis of the initial sol-gel powder has shown the presence of two crystalline structures, the cubic Bi4Ge3O12 (BGO) and monoclinic Bi2GeO5 crystallites, which evolves towards the BGO structure after annealing. The elemental analysis confirmed the composition of the desired compound Bi4Ge3O12 with 60 wt % GeO2 and 40 wt % Bi2O5. On the other hand, by changing the precursor to (Bi(CH3COO)(2), the film thickness increased to 500 nm thicker due to the high viscosity of the sol, and a dominant monoclinic Bi2GeO5 crystalline structure appeared. The elemental analysis revealed a nonstoichiometric composition with 38 wt % GeO2 and 62 wt % Bi2O3. Due to the low GeO2 phase content that reacted with metastable Bi2GeO5, we obtained cubic Bi4Ge3O12 as a secondary phase, with Bi2GeO5 as a dominant crystalline phase. The redshifts of both absorptions and emissions spectra peaks confirmed a different disorder structure as an interplay between the cubic Bi4Ge3O12 (BGO) and monoclinic Bi2GeO5 phases.

A complete characterization from optical, morphological, electrical, photo-electrical and thermo-electrical point of view was done for PEDOT:PSS thin films and DMSO and EG sensitized PEDOT:PSS films. The studies on the electrical conductivity and electrical photoconductivity allowed the calculation of different relaxation times. The relaxation time of the electrical conductivity is of order of femtosecond and is multiplied by a factor 10 when PEDOT: PSS thin films were deposited on surfaces sensitized with DMSO and EG. Besides, the photoconduction excitation and relaxation times are of order of seconds. An increase in the relaxation photoconduction time by 2 was observed for films deposited on surfaces sensitized with DMSO and by 1.2 for films deposited on surfaces sensitized with EG. The time response of electrical conductivity after exposure to light adds supplementary knowledge for the understanding of the inertial processes, or hysteresis behavior of organic or perovskite solar cells involving PEDOT:PSS films. The electrical conductivity increases with the temperature and the use of DMSO and EG as surfactants lead to higher values of electrical conductivity and Seebeck coefficient. A better stability of the electrical conductivity with the temperature increase, was noticed for films deposited on surfaces sensitized with DMSO.

Films of SiGe nanocrystals (NCs) in oxide have the advantage of tuning the energy band gap by adjusting SiGe NC s composition and size. In this study, SiGe-SiO2 amorphous films were deposited by magnetron sputtering on Si substrate followed by rapid thermal annealing at 700, 800 and 1000 degrees C. We investigated films with Si:Ge:SiO2 compositions of 25:25:50 vol.% and 5:45:50 vol.%. TEM investigations reveal the major changes in films morphology (SiGe NCs with different sizes and densities) produced by Si:Ge ratio and annealing temperature. XPS also show that the film depth profile of SiGe content is dependent on the annealing temperature. These changes strongly influence electrical and photoconduction properties. Depending on annealing temperature and Si:Ge ratio, photocurrents can be 10(3) times higher than dark currents. The photocurrent cutoff wavelength obtained on samples with 25:25 vol% SiGe ratio decreases with annealing temperature increase from 1260 nm in SWIR for 700 degrees C annealed films to 1210 nm for those at 1000 degrees C. By increasing Ge content in SiGe (5:45 vol%) the cutoff wavelength significantly shifts to 1345 nm (800 degrees C annealing). By performing measurements at 100 K, the cutoff wavelength extends in SWIR to 1630 nm having high photoresponsivity of 9.35 AW(-1).

The time evolution of a quantum dot exciton in Coulomb interaction with wetting layer carriers is treated using an approach similar to the independent boson model. The role of the polaronic unitary transform is played by the scattering matrix, for which a diagrammatic, linked cluster expansion is available Similarities and differences to the independent boson model are discussed. A numerical example is presented.

We propose a concept of hybrid nanoelectronic-magnetic device made of magnetic Fe-C core-shell nanoparticles deposited onto prepatterned Si (111) substrate with basic circuitry made of metallic conductive lines. The synthesis of magnetic material and the creation of nanoelectronic prepatterned interdigitated die are reported and to prove the effectiveness in devices, their magnetotransport properties are investigated. Magnetic Fe/FeC nanoparticles, 11 nm diameter, with a core-shell structure have been prepared by laser pyrolysis. Two different layouts of prepatterned interdigitated die, have been conceived using e-beam lithography, with various geometries. A range of microscopy techniques, transmission electron, scanning and optical, were employed for morphological characterization of the as-obtained structures. Magnetic and magnetotransport characterization using SQUID magnetometry has been performed onto both the core-shell nanoparticles and onto the hybrid device obtained by depositing centrifugated and dispersed core-shell nanoparticles from liquid carrier solutions. From magnetotransport measurements, it has been revealed that the hybrid device made of Fe/FeC nanosized materials on prepatterned interdigitated die exhibit a large giant magnetoresistive (GMR) effect of about 8% at 300 K. This result is promising in view of the use of such devices as arrays of nanosensors and in spintronic applications.

Hybrid organic-inorganic thin films based on zinc phthalocyanine (ZnPc) and ZnO nanoparticles were deposited by Matrix Assisted Pulsed Laser Evaporation (MAPLE). Synthesized by a simple wet chemical precipitation method, the ZnO nanoparticles were featured by a hexagonal wurtzite structure, a band-gap value of similar to 3.3 eV and emission bands typical for this semiconductor. The hybrid films containing ZnPc and various amounts of ZnO nanoparticles were evaluated from morphological, compositional, structural, optical and electrical point of view. No chemical decomposition of the organic compound was observed in the FTIR spectra of the deposited layers. The transmittance and photoluminescence spectra recorded on hybrid films disclose the optical signature of both organic (ZnPc) and inorganic (ZnO) components. The electrical measurements carried out under illumination emphasized the importance of the quantity of the inorganic component on the performance parameters of the structures prepared with the hybrid films. Our study provides new insight in the MAPLE deposition of the organic-inorganic hybrid films with potential applications in the photovoltaic cells area.

We show that a simple ethanol (EtOH) refluxing treatment at mild temperature (120 degrees C) allows producing blue-colored and reduced titanium dioxide (TiO2-x) exhibiting improved visible-light (VIS) photocatalytic properties. The treatment causes an increase in the density of Ti(III) species and the appearance of two optical absorption features: a broad absorption band-responsible for the blue coloration- extending from the green region (similar to 2.3 eV) up to the near-infrared and a subgap absorption tail close to the band gap energy. The experimental results combined with a computation of the density of states via hybrid Hartree-Fock density functional support the hypothesis that the EtOH reflux treatment leads to formation of surface and subsurface oxygen (O) vacancies. We also show that the excitation-resolved photoluminescence technique allows a high-contrast detection of a subgap optical excitation band peaked at about 430 nm (similar to 2.9 eV), associated with anatase photoluminescence, whose intensity increases after the EtOH reflux treatment. This result gives a very direct support to the debated hypothesis identifying O vacancy states as the energy levels involved in the radiative transition of anatase TiO2. Improved photocatalytic degradation by the processed TiO2 under VIS illumination is demonstrated, and the possible mechanism involved in the formation of surface O vacancies is discussed. The method outlines a very simple, low-cost, and fast procedure to target the formation of O vacancies in the TiO2 surface region.

The emerging field of electronics based on ferro-functional materials relies on driving effectively and predictably a ferroelectric system between different polarization states through bias applied to metallic contacts. This requires detailed understanding of the growth mechanisms and electronic properties of the interface, including ferroelectric and material - dependent band alignment and Schottky barrier heights. Whether the major contribution at the interface band alignment comes from the work function difference or from the ferroelectric state is still under debate. Here, using X-ray photoemsion and ab-initio calculations, we derive the complex microscopic picture of metal/ferroelectric interface formation, including growth mechanism, valence alteration, ferroelectric-dependent electrostatic potential and thickness - dependent compensation mechanisms of ferroelectricity, starting from the ultrathin growth of Cu up to 100 angstrom on BaTiO3. One establishes the evolution of the band bending and of the build-in potential from the initial probed thickness of the ferroelectric in the range of 3 lambda (lambda - the inelastic mean free path) while gradually approaching the contact region with the metal at higher thickness of the top layer. We find that the well-defined orientation of the ferroelectric polarization lead to a band bending at the interface, which add at the bending expected from the work function difference of the two joining materials.

Memristors characterized by non-volatile memory resistance switching are promising candidates for building brain inspired computing architectures. However, existing memristive devices are still far from the energy efficiency of petaflops per joule exhibited by biological neural networks. Therefore, to achieve the goal of ultra-low power operation, it is necessary to develop new materials for the active layer in memristors. Here, we show highly energy efficient memristive devices built from liquid-exfoliated 2D WS2 and MoS2 nanosheets, enriched in monolayers using a cascade centrifugation method. Lateral devices with electrochemically inert electrodes were built using the drop casting method. The devices show non-volatile resistive switching with a remarkable low energy consumption. This work contributes to the realization of energy efficient and high performance neuromorphic computing applications. (c) 2020 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).

Aminopropyl-silica nanoparticles S0 were obtained and further functionalized with eight halogen-reactive organic compounds 1-8, leading to the S1-S8 hybrid organic-inorganic materials, with spherical morphology and having a 50-200 nm size, as showed TEM analysis. These were further characterized by IR and DLS. Biological assays were performed using five microbial strains, belonging to species frequently encountered in the aetiology of human infections (Enterococcus faecalis, Staphylococcus aureus, Pseudomonas aeruginosa, Escherichia toll and Candida albicans). The obtained materials exhibited promising antimicrobial properties, being active against planktonic, but particularly on biofilm-embedded cells. Among the tested hybrid nanomaterials, S6 seemed to exhibit the most promising antimicrobial profile.