National Institute Of Materials Physics - Romania

Laser pulse processing of surfaces and thin films is a useful tool for amorphous thin films crystallization, surface nanostructuring, phase transformation and modification of physical properties of thin films. Here we show the effects of nanostructuring produced at the surface and under the surface of amorphous GeTiO films through laser pulses using fluences of 10-30 mJ/cm(2). The GeTiO films were obtained by RF magnetron sputtering with 50:50 initial atomic ratio of Ge:TiO2. Laser irradiation was performed by using the fourth harmonic (266 nm) of a Nd:YAG laser. The laser-induced nanostructuring results in two effects, the first one is the appearance of a wave-like topography at the film surface, with a periodicity of 200 nm and the second one is the structure modification of a layer under the film surface, at a depth that is related to the absorption length of the laser radiation. The periodicity of the wave-like relief is smaller than the laser wavelength. In the modified layer, the Ge atoms are segregated in spherical amorphous nanoparticles as a result of the fast diffusion of Ge atoms in the amorphous GeTiO matrix. The temperature estimation of the film surface during the laser pulses shows a maximum of about 500 degrees C, which is much lower than the melting temperature of the GeTiO matrix. GeO gas is formed at laser fluences higher than 20 mJ/cm(2) and produces nanovoids in the laser-modified layer at the film surface. A glass transition at low temperatures could happen in the amorphous GeTiO film, which explains the formation of the wave-like topography. The very high Ge diffusivity during the laser pulse action, which is characteristic for liquids, cannot be reached in a viscous matrix. Our experiments show that the diffusivity of atomic and molecular species such as Ge and GeO is very much enhanced in the presence of the laser pulse field. Consequently, the fast diffusion drives the formation of amorphous Ge nanoparticles through the segregation of Ge atoms in the GeTiO matrix. The nanostructuring effects induced by the laser irradiation can be used in functionalizing the surface of the films.

The role of iron doping on magnetic properties of hydrothermal anatase TiO2:Fe-57 (0-1 at. %) nanoparticles is investigated by combining superconducting quantum interference device magnetometry with Mossbauer and electron paramagnetic resonance techniques. The results on both as-prepared and thermally treated samples in reduced air atmosphere reveal complexity of magnetic interactions, in connection to certain iron ion electron configurations and defects (oxygen vacancies, F-center, and Ti3+ ions). The distribution of iron ions is predominantly at nanoparticle surface layers. Formation of weak ferromagnetic domains up to 380 K is mainly related to defects, supporting the bound magnetic polaron model. (C) 2015 AIP Publishing LLC.

Efficient laser emission at 1.06 mu m was obtained from a diode-laser quasi-continuous wave pumped Nd0.04Gd0.86Lu0.10Ca4O(BO3)(3) (Nd:GdLuCOB) single crystal. An uncoated, 6.0-mm long, ZX-cut Nd:GdLuCOB medium yielded laser pulses with 1.76 W peak power for absorbed pump pulses of 5.49 W peak power, corresponding to an overall optical-to-optical efficiency eta(oa) = 0.32; the slope efficiency was eta(sa) = 0.44. Comparison is made with an uncoated XY-cut Nd:GdCOB medium (4.0-at.% Nd doping and 6.8-mm length) from which laser pulses with 1.74W peak power (at optical efficiency eta(oa) = 0.25) and 0.31 slope efficiency were obtained. The improvements in laser emission of Nd:GdLuCOB at the fundamental wavelength are important for future self-frequency doubling in ZX principal plane of this crystal. (C) 2015 Elsevier B.V. All rights reserved.

We report on scaling of a laser configuration in which a YAG prism is used to couple the pump beam from a fiber-coupled diode laser directly into a Nd:YAG medium. Several resonator geometries have been investigated. In free generation regime laser pulses at 1.06 mu m with energy of 22.1 mJ for the pump energy of 44.6 mJ were obtained from a 10.0 mm long, 1.0-at% Nd:YAG single crystal that had the high-reflectivity mirror coated directly on one of the laser crystal surface. The slope efficiency was 0.51. A similar uncoated Nd:YAG crystal placed in a plane-plane resonator delivered laser pulses with 17.8 mJ energy under the pump with 45.4 mJ energy, at 0.40 slope efficiency. Further, a passively Q-switched Nd:YAG/Cr4+:YAG composite ceramic laser pumped through a YAG prism has been built. Using a Cr4+:YAG saturable absorber of 0.85 initial transmission the device delivered laser pulses with 0.29 mJ energy and 11 ns duration. The output performances are compared to those obtained in a classical end-pumping scheme. (C) 2014 Elsevier Ltd. All rights reserved.

In the present work, we report a systematic study of the phase formation and sintering ability of different oxide compositions in the SnO2-ZnO binary system using solid state reactions. For some selected compositions mechanically activated powders were also investigated. Structural and morphological characterizations of the samples were performed by X-ray diffraction (XRD), FT-IR Spectroscopy, Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). Only the formation of Zn2SnO4 binary compound was revealed in the experimental conditions. Based on the structural results the subsolidus equilibrium phase diagram was established. The sintering ability of the studied samples was also determined, establishing the compositions domains of obtaining dense or porous ceramics. The investigation by impedance spectroscopy in the 300-600 K temperature range shows that all studied samples exhibit n-type semiconductor behavior with low values of the activation energy (0.18-0.34 eV). (C) 2014 Elsevier Ltd and Teclma Group S.r.l. All rights reserved.

Bulk ceramics of Ga2S3 and rare-earth sulfides (EuS, Gd2S3, Er2S3) as well as combinations thereof have been prepared by spark plasma sintering (SPS). The disk-shaped ceramics were used as targets for pulsed laser deposition (PLD) experiments to obtain amorphous thin films. The properties of these new bulks and amorphous thin films have been investigated by x-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive x-ray spectroscopy (EDX), optical transmission spectroscopy, and atomic force microscopy (AFM). In order to test the photoexpansion effect in Gd2S3 and the possibility to create planar arrays of microlenses, the film was irradiated with femtosecond laser pulses at different powers. For low laser power pulses (up to 100mW power per pulse) a photoexpansion effect was observed, which leads to formation of hillocks with a height of 40-50 nm. EuS doped Gd2S3 thin film shows luminescence properties, which recommend them for optoelectronic applications.

Thin films of Sr2FeMoO6 (SFMO) were grown by pulsed laser deposition in non-optimized argon ambient pressures. The films were found to contain a high number of precipitates of foreign phases. The nature and microstructure of these phases were investigated in detail by high-resolution scanning transmission electron microscopy (STEM) and X-ray diffractometry (XRD). We found out that the dominant foreign phase embedded in the SFMO film matrix was SrMoO4 (SMO). Through STEM and XRD analysis, we determined that the SMO phase grows epitaxially with respect to the surrounding SFMO matrix and has a fairly good crystallinity. Although the SFMO films include many foreign precipitates, they still exhibit good conducting properties and moderate magnetization values. Tuning the growth of the SMO phase on top of SFMO films to obtain a natural tunnel barrier might pave the way for future applications of SFMO in spintronic devices.

A series of 3,4,5-tridodecyloxybenzyl pyridinium salts derived from 4-hydroxypyridine has been designed and prepared. The liquid crystalline properties of these compounds were investigated by polarized optical microscopy, differential scanning calorimetry and powder X-ray diffraction while their thermal stability was studied by thermogravimetric analysis. The N-3,4,5-tridodecyloxybenzyl-4-pyridone intermediate shows a monotropic columnar hexagonal mesophase ranging from 56 degrees C down to room temperature while the corresponding bromide dodecyl O-alkylated pyridinium salt shows one enantiotropic columnar mesophase and one additional monotropic columnar phase at lower temperatures. Replacing bromide ion (Br-) with other counterions (NO3-, BF4- and PF6-) resulted in mesophase suppression. These luminescent pyridinium salts show weak emission in dichloromethane solutions at room temperature and a pronounced red-shifted emission in solid state. Photoluminescent properties of the pyridinium salts do not depend significantly on the nature of counterion employed. (C) 2014 Elsevier B.V. All rights reserved.

The aim of this research is to prepare amorphous thin films of undoped gallium sulphide and doped with rare-earth sulphides, of rare-earth sulphides and to investigate their physical properties. We have prepared thin amorphous films of Ga2S3, EuS, Er2S3, Gd2S3, and Ga2S3 doped with rare-earth sulphides (Ga2S3:EuS, Ga2S3:Er2S3, Ga2S3:Gd2S3) by Pulsed laser Deposition (PLD). The corresponding targets for preparation of amorphous thin films were obtained by Spark Plasma Sintering (SPS) from commercially available powders of binary sulphides. The structural results for the undoped and doped Ga2S3 thin films indicate a packing of disordered layers similar to that of amorphous As2S3. Femtosecond laser irradiation of the Ga2S3 thin films shows a photoexpansion effect at low laser power (85-100 mW) and an ablation effect at higher laser power (above 105 mW). The threshold between low power and high power pulses is situated at higher value for Ga2S3 (100 mW) in comparison with the case of As2S3 thin films (20 mW). (C) 2014 Elsevier B.V. All rights reserved.