Publications

The aim of this study was to evaluate the adhesion of different bioceramic coatings deposited by radio frequency magnetron sputtering on the biodegradable implant-type magnesium-calcium (MgCa) alloys. Hydroxyapatite (HA) and bioactive glass (BG) were chosen as coating materials, due to their remarkable biological potential. The morphology, composition, structure and adhesion of the deposited thin coatings was characterized by scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectroscopy, grazing incidence X-ray diffraction, Fourier transform infrared spectroscopy and pull-out adherence measurements. A variation of the coating-to-substrate adhesion has been recorded and correlated with the physico-chemical results. The bonding strength values of the coatings were promising (being superior to the ISO13779-2:2008 fabrication standard for load-bearing biomedical coatings), and thus, encourage us to further proceed with the biological evaluation of the HA or BG coatings-MgCa substrate couples.

The influence of the heat treatments on the martensitic transformation, magnetic properties and thermo- and magnetic induced strain on Ni50Fe20Ga27Cu3 ferromagnetic shape memory alloy prepared as ribbons by melt spinning technique are investigated. The degree of atomic order as effect of different thermal treatments produces important changes in the magneto-crystalline anisotropy of the martensite phase. The anomalies evidenced in the thermo-and magnetic-strain curves are discussed and correlated with the thermo-magnetic data. The transformation-induced strains with and without magnetic field have been measured, the results setting out the influence of the pre-martensitic transformation. Copyright (C) 2016 The Authors. Published by Elsevier B.V.

In this paper, the design of aperture-couplet rectangular dielectric resonator antennas arrays is illustrated. The effect of slot feed on the dielectric resonator antenna (DRA) and the effect of the spacing between array elements is observed. This paperwork can be useful for WLAN applications with the operating frequency 5.8 GHz.

A two dimensional photonic crystal with hexagonal symmetry is investigated by finite-difference time-domain and finite difference frequency-domain theoretical calculations. The system consist in a germanium substrate patterned with holes of different radii, varying from 0.1 alpha to 0.45 alpha, The photonic band gaps (PBGs) and the reflectance spectra allow a complete characterization of the structure. It was shown the presence of PBGs at telecommunication wavelengths which makes the present systems suitable for optoelectronic applications, representing a potential alternative to Si-based technology

The direct detection of dark matter candidates, for which semiconductor materials are used, is based on the detection of low energy selfrecoils. We show that the corrections to the energy partition curves due to the energy exchange during the transient processes modify the predictions of the standard Lindhard theory. These effects, calculated in the frame of a new model developed by the authors, depend on the initial temperature at which the detector operates, and on the energy of the recoil. Most of the available experimental data accumulated during more than fifty years. support these results.

The experimental demonstration of fundamental direct bandgap, group IV GeSn alloys has constituted an important step towards realization of the last missing ingredient for electronic-photonic integrated circuits, i.e. the efficient group IV laser source. In this contribution, we present electroluminescence studies of reduced-pressure CVD grown, direct bandgap GeSn light emitting diodes (LEDs) with Sn contents up to 11 at.%. Besides homojunction GeSn LEDs, complex heterojunction structures, such as GeSn/Ge multi quantum wells (MQWs) have been studied. Structural and compositional investigations confirm high crystalline quality, abrupt interfaces and tailored strain of the grown structures. While also being suitable for light absorption applications, all devices show light emission in a narrow short-wave infrared (SWIR) range. Temperature dependent electroluminescence (EL) clearly indicates a fundamentally direct bandgap in the 11 at.% Sn sample, with room temperature emission at around 0.55 eV (2.25 mu m). We have, however, identified some limitations of the GeSn/Ge MQW approach regarding emission efficiency, which can be overcome by introducing SiGeSn ternary alloys as quantum confinement barriers.

We report the applicability of a hybrid system comprising a La3+-based catalyst and an Au/TiO2 photocatalyst in the decomposition of chemical weapons. This system is able to perform complete degradation of soman, sarin and VX in less than 1 minute under low basic conditions and visible light irradiation.

The structure and charge storage properties of a trilayer structure with Ge nanocrystals embedded in HfO2 oxide were studied. The trilayer structure HfO2/Ge-HfO2/HfO2/p-Si was prepared by magnetron sputtering and subsequent rapid thermal annealing at 600 degrees C. The TEM investigations reveal the formation of Ge NCs embedded in crystalline HfO2 at the position of the Ge-HfO2 layer. The capacitors were made by Al evaporation on both front and backside of the trilayer structure. The C-V characteristics show a counterclockwise hysteresis with large memory window of 0.85 V which is given only by the contribution of the Ge NCs embedded in HfO2. The I-V characteristics show an asymmetric behavior, the currents are three times higher for the negative voltage than the positive one.

One of the methods of direct detection of the massive component of dark matter is the registration of self-recoils in semiconductor detectors at cryogeniC temperatures after the WIMPS scattering. In this contribution, after a short presentation of Lindhard curves, derived from the integro-differential equations of the general theory, we discuss the discrepancies between experimental data and theoretical predictions, as well as the corrections suggested in the literature. A new correction is proposed, which is due to the energy transfer between the electronic and atomic subsystems in the solid during the transient phenomena following the primary interaction, and some numerical results are presented.

Laser-induced chemical conversion of graphene oxide (GO) is an effective way to modify its properties and expand its potential use for numerous applications. In this work, a mechanically stable and flexible freestanding GO membrane is synthesized and further processed by ultraviolet laser radiation in gas and liquid ammonia-rich environments. Electron and atomic force microscopy, as well as X-ray photoelectron spectroscopy analysis, reveal that laser irradiation in gas leads to a large defect-induced morphology modification and high deoxygenation process, accompanied by the slight incorporation of nitrogen functionality to the reduced GO structure. Conversely, irradiation in liquid provokes significant integration of nitrogen groups, essentially amines, into a partially reduced GO structure, without evident modification of the morphology. Electrical measurements on the macro-and nano-scale point to a complex contribution of morphology and oxidized regions to the overall resistance of the rGO.