Publications

Based on first principles electronic structure calculations using the Coherent Potential Approximation (CPA) in the Blackman-Esterling-Berk (BEB) multiscattering formalism and the variable range hopping (VRH) model proposed by Mott, we evaluate the low temperature dc conductivity and its temperature dependence for n-doped wurtzite-type M:ZnO, with M = Al, Ti, Mn, at concentrations of 2, 5 and 10 at.% respectively. We theoretically determine the phenomenologic quantities in the expression of the hopping conductivity, as well as the temperature range in which the VRH model is applicable to the investigated compounds. We show that self-consistent CPA-BEB and LSDA+U calculations yield reasonable band gaps, dopant state localization and also spin magnetic moments for the Ti and Mn systems. These results are discussed in comparison with reported data obtained by supercell LSDA+U calculations for similar systems. The results in this study point to 2-5 at.% Ti and approximately 2 at.% Al codoping in wurtzite-type ZnO as an interesting option to obtain a material with an increased low temperature dc conductivity and ferromagnetic background. (C) 2012 Elsevier B.V. Open access under CC BY-NC-ND license.

Inhibitive properties of the antibacterial sulfa drug sulfathiazole-IUPAC name being 4-amino-N-(1,3-thiazol-2-yl) benzene sulfonamide-on the corrosion of carbon steel in 1.0M HCl solution were investigated using weight loss measurements, electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and X-ray photoelectron spectroscopy (XPS). Sulfathiazole is a good adsorption inhibitor, and the inhibition efficiency increases with increasing concentration. Adsorption is spontaneous and is best described by Temkin isotherm. XPS analysis showed, at this stage, that the main product of corrosion is a nonstoichiometric Fe3+ oxide/oxyhydroxide consisting of a mixture of Fe2O3, alpha, and gamma-FeO(OH) and/or Fe(OH)(3), where alpha, gamma-FeO(OH) is the main phase.

This paper presents a new technique for investigating the modifications induced by high-density green light [GL] on water in NaCl solutions. Solutions of 0,45 g% and 0,9 g%, irradiated with green light (lambda = 527 nm, intensity 3.10(5) Lx) were used. As a receptor for measuring the irradiation effect we used red blood cell (RBC) permeability in hypotonic media, the so-called osmotic shock. After RBC lysis in hypotonic medium, the released hemoglobin was spectrophotometrically determined at lambda = 550 nm. The values of the osmotic shock for the samples obtained with GL-irradiated NaCl solutions were significantly lower than the values obtained with non-irradiated controls. This may indicate that the penetration of water inside the membranes canaliculi is hindered. This new type of result was complemented by chronoamperometry and impedance spectroscopy determinations. The current density of the irradiated solution decreases from the value of 29.5 mu A.cm(-2) in the control to 17.74 mu A.cm(-2) in the irradiated sample with a corresponding decrease of ionic mobility. The impedance value of the GL irradiated NaCl solutions were significantly lower than the control values, thus correlating well with the data recorded by chronoamperometry. All these data may indicate large water cluster formation through GL irradiation which are beyond the cellular aquaporine channels capacity. A similar process is identified by using red light, as well as blue light, though with a much smaller output.

Abnormal anti-Stokes Raman emission (AASRE) is defined by an anti-Stokes/Stokes intensity ratio much greater than expected on the basis of the equilibrium population of excited vibration states provided by the Boltzmann law. AASRE can be observed both in materials with intrinsic nonlinear optical properties as LiNbO3 or materials in which the nonlinear optical properties are induced by resonant optical excitation, as carbon nanotubes. Using a surface enhanced Raman scattering (SERS) device, consisting from single wall carbon nanotubes deposited on a rough Au or Ag support and LiNbO3 in form of powder, we demonstrate that under continuous single beam excitation they present AASRE whose properties are similar to a single beam pumped Coherent Anti-Stokes Raman Scattering. AASRE is usually accompanied by a coherent backscattering, it can be considered as Anderson localization of light that results from a wave-mixing mechanism of the incident laser light with a Stokes shifted Raman light produced by a spontaneous Raman light scattering process. The transport of the light inside of sample, giving rise to AASRE and coherent backscattering, is done by an elastic light scattering mechanism.

The tunnel-diode resonator (TDR) technique for accurate measurements of the magnetic penetration depth is used to measure the London and Campbell penetration depths of polycrystalline SiC doped (10wt.%) MgB2. The Campbell length was used to investigate the field and temperature dependence of the critical current density. The as determined critical current density provides values as high as 6x10(6) A/cm(2) at 4.2K, 1T, which is higher than values estimated by Bean method.

Ba(Zn1/3Ta2/3)O-3 (BZT) perovskite material has stimulated a large interest due to its excellent dielectric properties in microwave frequency range, enabling the miniaturization of communications devices. In this work, BZT ceramics were prepared by the conventional solid-state reaction method, being doped with Nb5+, Ce4+ or Yb3+. BZT resonators were compositional, structural, morphological and electrical characterized. The influence of the dopants and sintering temperature on the microwave dielectric properties of BZT samples was investigated. The resonator doped with 0.5 mol% Nb2O5 and sintered at 1600 degrees C / 2 h exhibits the best dielectric behaviour: e(r) similar to 25.9 and Qxf similar to 159 THz.

In the present contribution, the peculiarities of the electronic and nuclear energy loss of some "exotic" particles, as well as the transient phenomena produced in materials during their stopping are investigated, for their potential use in detectors. In some cases (e. g. strangelets or fullerene ions), these phenomena are produced directly by the incoming particles, and also by their secondary products, while in others (e. g. weakly interacting massive particles) only by the recoils resulting from their elastic scattering on the nuclei of the target. The analysis is made in the frame of a thermal spike model, as time and space dependencies of the electronic and atomic temperatures in the neighbourhood of the interaction point or of the trajectory of the particle.

In this paper we continue the previous investigations on nanostructured GexSi1-x films. The films were deposited by magnetron sputtering and annealed in N-2 atmosphere at 700 degrees C. Their structure was investigated and correlated with the electrical behavior. For this, conventional and high-resolution transmission electron microscopy together with selected area electron diffraction was used. Electrical measurements of current-voltage and current-temperature curves were made. The majority of crystallites that forms the films have the composition Ge50Si50 and 15 - 30 nm size. The I - T characteristics have Arrhenius dependence, with two activation energies interpreted as transitions between quantum confinement levels.

The paper presents the synthesis and optical/structural characterization of 1% CdSe-doped Li2O-Al2O3-P2O5 glasses as promising materials for temperature sensors based on luminescence. The doped glasses were synthesized by a conventional dry route, embedding the dopant into the molten glass under continuous stirring. UV-Vis absorption revealed characteristic features for CdSe semiconductor with a cut-off correlated with the band gap of the dopant. Structural information was provided by FTIR and Raman spectroscopy. FTIR and Raman maxima are assigned to vibration modes characteristic for the phosphate vitreous network. Fluorescence spectroscopy by 365 nm excitation put in evidence the luminescent emission of the doped glass in the visible range. SEM images show CdSe particles which are responsible for the yellow color of the doped samples, being detected 12-24 nm quantum dots and the smaller particles are under the detection limit.