Publications

The X (9.8 GHz)-band electron paramagnetic resonance (EPR) properties of substitutional Mn2+ ions in high quality cubic ZnS single crystals grown from PbCl2 flux have been thoroughly investigated. Accurate spin Hamiltonian (SH) parameters: g = 2.002 25 +/- 0.000 06; a = (7.987 +/- 0.008) x 10(-4) cm(-1) and A = -(63.88 +/- 0.02) x 10(-4) cm(-1) were obtained by simulation and fitting to the experimentally allowed transitions recorded for the magnetic field aligned within +/- 0.25 degrees along the main crystal axes. The normally forbidden hyperfine M = + 1/2 -1/2, Delta m = +/- 1 transitions were also observed. Their position was found to be in agreement, within the experimental accuracy of Delta H = +/- 0.01 mT, with calculations using the same SH parameters. The angular variation of the ratios of the intensities of the central forbidden to the allowed transitions could be accounted for only by including an additional constant contribution. The observed line broadening of the M = +/- 1/2 +/- 3/2 and +/- 3/2 +/- 5/2 fine structure transitions and their line width variation in a (110) plane have been quantitatively described by considering a random distribution of lattice strains at the Mn2+ impurity ions. The influence of the forbidden transitions and line broadening on the EPR spectra line shape of the Mn2+ ions in cubic ZnS crystalline powders is also examined.

Functionalization of PbI2 with conjugated polymers (polyaniline-emeraldine base (PANI-EB) or polyaniline-emeraldine salt (PANI-ES)) is demonstrated by Raman and luminescence studies. PbI2/PANI hybrid material was prepared by electrochemical polymerization of aniline onto the PbI2 modified Pt electrode and mechanico-chemical reaction between the two constituents. PANI interacting with the PbI2 gives rise to new Raman bands at 80,144 and 170 cm(-1). First line reveals the formation of "stacking faults" that disrupt the I-Pb-I layers stacking along the c axis by the insertion of polymer molecules. The bands at 144 and 170 cm(-1) are attributed to the vibrational mode associated with Pb-NHR ''(2) (R '' = C6H4) bond. The functionalization of PbI2 with PANI-EB brings forth the PANI-ES form. Depending on the semiconducting (PANI-EB) or conducting (PANI-ES) properties of the polymer in the PbI2/PANI intercalated material, a partial or total collection of the charges generated under band to band irradiation is revealed by photoluminescence studies. (C) 2009 Elsevier Inc. All rights reserved.

Electrochemical polymerization of 2,2'-bithiophene (BTh) on single-walled carbon nanotube (SWCNT) films has been studied by Raman scattering and infrared absorption spectroscopy. Covalent functionalization of SWCNTs with poly(bithiophene) (PBTh) in its un-doped and doped states is demonstrated. The occurrence of a charge transfer process at the interface of PBTh and SWCNTs, is shown by: (i) an up-shift of the Raman lines associated with the radial breathing modes of SWCNTs that reveals both a doping process and an additional twisting together as a rope with the conducting polymer as binding agent; (ii) a new Raman band in the range 1430-1450 cm(-1) indicating the functionalization of SWCNTs with PBTh in doped and un-doped states; (iii) strong absorption bands situated in the interval 600-800 cm(-1) resulting from steric hindrance produced by the nanotube binding to the polymeric chain. Treatment of the PBTh/SWCNT composite with aqueous NH4OH Solution forms un-doped PBTh covalently functionalized SWCNTs. At the resonant excitation of the metallic tubes, an additionally enhanced Raman process is generated by plasmon excitation in the metallic nanotubes. It is evidenced by a particular behavior in the Stokes and anti-Stokes branch of the PBTh Raman line at 1450 cm(-1). (C) 2009 Elsevier Ltd. All rights reserved.

In a previous paper [C.M. Teodorescu and G.A. Lungu, J. Optoelectron. Adv, Mater. 10, 3058 (2008)] we studied the zero temperature problem of the occurence of band ferromagnetism and of the derivation of the Stoner criterion for systems of variable dimensionality: 1D, 2D, 3D. The dimensionality of the system is reflected by a different shape of the density of states. For ideal 2D systems, the density of states is a constant and this seems to be the simplest case to be modelled. In this paper we integrate to this simplest model of constant density of states the influence of temperature, in order to analyse temperature-dependent ferromagnetism in two-dimensional systems, such as magnetic surfaces. Some surprising results are obtained, namely: (i) in contrast to the common belief, in this case the influence of the temperature is to favour, not to inhibit ferromagnetism, i.e. in some conditions ferromagnetism may be obtained at finite temperature. even for systems where the zero temperature Stoner criterion is not satisfied; (ii) for a careful choice of the ratio between the Hubbard energy parameter U and the equilibrium zero-temperature Fermi level value epsilon(mu) (0), systems nonmagnetic at low temperature which become magnetic at higher temperature may be possible. A short review of the experimental data which may be interpreted within the present formalism is also given.

We investigate the scattering phenomena produced by a general finite-range nonseparable potential in a multichannel two-probe cylindrical nanowire heterostructure. The multichannel current scattering matrix is efficiently computed using the R-matrix formalism extended for cylindrical coordinates. Considering the contribution of the evanescent channels to the scattering matrix, we are able to put in evidence the specific dips in the tunneling coefficient in the case of an attractive potential. The cylindrical symmetry cancels the "selection rules" known for Cartesian coordinates. If the attractive potential is superposed over a nonuniform potential along the nanowire then resonant transmission peaks appear. We can characterize them quantitatively through the poles of the current scattering matrix. Detailed maps of the localization probability density sustain the physical interpretation of the resonances (dips and peaks). Our formalism is applied to a variety of model systems such as a quantum dot, a core/shell quantum ring, or a double barrier embedded into the nanocylinder.

We report on the pulsed laser deposition and characterization of thick (1.27 mu m) films ablated from a nanocrystalline YBa2Cu3O7-delta (YBCO) target doped with 4 wt% BaZrO3 (BZO), nYBCO/BZO. DC magnetization measurements have shown a four-to five-fold increase in the critical current density J(c) and a three- to four-fold increase in the maximum pinning force in comparison with 1 mu m thick films grown from a commercial microcrystalline YBCO target, at both 77.3 and 65 K. We have found that the frequency-dependent critical current densities J(c)(f(0)/f) estimated from susceptibility measurements are linear in a double-logarithmic plot ( where f is the frequency of the AC field and f(0) is a macroscopic attempt frequency of about 10(6) Hz), consistent with a logarithmic dependence of the pinning potential on the current density, and are again several times higher in nYBCO/BZO thick films. From the slopes of the J(c)(f(0)/f) dependences we have also estimated the values of pinning potentials in fields between 3 and 5 T.

This paper presents investigations on the electrical transport phenomena in sandwich type inorganic/single (double) organic layer/inorganic such as silicon; ITO/TPyP, Alq3, alpha-NPD; ZnPc; perylene" PTCDA/silicon and inorganic (metal)/organic/metal such as silicon (A/)/ZnPc; alpha-NPD; TPyP/copper, Al, structures, prepared by vacuum evaporation. For most of these heterostructures the IN characteristics in the static regime have a near ohmic behaviour only at low voltages (10V) an increased number of charge carriers are injected from n type Si in Alq3 compared to TpyP. The injection properties of the interface ITO, Cu, Al electrode/organic layer have also been investigated. The best injection has been obtained through ITO/ZnPc interface. For a grid configuration of the Al electrodes the transport phenomena are determined by the resistivity of the structure.

ZnO nano-needle arrays and films have been prepared by anodic etching of ZnO foil at constant current in potassium zincate solution and sodium hydroxide alcoholic solution, respectively. Photoluminescence (PL) spectra recorded on ZnO nano-needles have shown a broad band at 585 nm due to the native oxygen defects incorporated during the synthesis processes; in a ZnO film-type sample this band is replaced by another one at 432 nm. Thermoluminescence (TL) glow curves recorded on ZnO nano-needle arrays have shown a broad peak at about 360 degrees C similar to that observed in ZnO polycrystalline powder. A very strong TL peak at about 325 degrees C superimposed on a broad one has been observed in a ZnO film-type sample. TL recorded on ZnO nano-needles has tentatively been attributed to the recombination of charge carriers released from the surface states associated with oxygen defects, mainly interstitial oxygen ion centres; the TL mechanism is supported by a recovery effect of the PL and TL after storage in air. (C) 2008 Elsevier B.V. All rights reserved.

The obtaining of a good ohmic contacts on the semiconductor material surfaces is strongly depending on the ability of the cleaning procedures to remove the native oxides and also, in the case of the compounds, to keep the surface stoichiometry. In this work, the XPS technique has been used in order to compare the efficiency of both, chemical etching and the Ar+ ion sputtering methods as to be suitable cleaning procedures in the case of n-GaP semiconductor compound surfaces preparation for the optoelectronic devices obtaining. The results have revealed some differences in the final surface composition/stoichiometry. The atomic ratio P/Ga within the outer layer of the single crystalline sample (similar to 100 angstrom) has been evaluated. The presence of residual of surface oxides was recorded after performing the chemical cleaning.